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    FLUORESCENT SUBSTANCE AND PRODUCTION METHOD THEREOF, AND LIGHT EMITTING DEVICE
    65.
    发明申请
    FLUORESCENT SUBSTANCE AND PRODUCTION METHOD THEREOF, AND LIGHT EMITTING DEVICE 有权
    荧光物质及其生产方法及发光装置

    公开(公告)号：US20100053932A1

    公开(公告)日：2010-03-04

    申请号：US12515335

    申请日：2007-11-20

    申请人： Hideyuki Emoto ,  Toshiaki Nagumo

    发明人： Hideyuki Emoto ,  Toshiaki Nagumo

    IPC分类号： F21V9/16 ,  C09K11/08

    CPC分类号： C09K11/7734 ,  C04B35/597 ,  C04B35/6262 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3865 ,  C04B2235/3878 ,  C04B2235/3895 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5481 ,  C04B2235/761 ,  C04B2235/767 ,  C09K11/0883

    摘要： Offered is a fluorescent substance consisting of Eu-activated β-sialon and capable of enhancing the brightness of a light emitting device such as a white LED using blue or ultraviolet light as a light source. The fluorescent substance has as its main constituent a β-sialon represented by the general formula Si6-zAlzOzN8-z and containing Eu, wherein the spin density is 2.0×1017/g or less as measured by electron spin resonance spectroscopy corresponding to an absorption of g=2.00±0.02 at 25° C. In the above fluorescent substance, it is preferable that lattice constant a of the β-sialon be 0.7608-0.7620 nm, the lattice constant c be 0.2908-0.2920 nm, and the Eu content be 0.1-3 mass %.

    摘要翻译： 提供的是由Eu活化和β-半乳聚糖组成的荧光物质，并且能够提高诸如使用蓝色或紫外光作为光源的白色LED等发光装置的亮度。 荧光物质以通式Si 6-z Al z O z N 8-z表示并含有Eu的主要成分为主要成分，其中通过对应于吸收的电子自旋共振光谱测定的自旋密度为2.0×10 17 / g以下 在25℃下g = 2.00±0.02。在上述荧光物质中，优选的是，β-赛隆的晶格常数a为0.7608-0.7620nm，晶格常数c为0.2908-0.2920nm，Eu含量 为0.1〜3质量％。

    Method of altering crystal structure of group 13 element nitride, group 13 element nitride and structure material containing cubic nitride
    69.
    发明授权
    Method of altering crystal structure of group 13 element nitride, group 13 element nitride and structure material containing cubic nitride 失效
    改变13族元素氮化物，13族元素氮化物和含有立方氮化物的结构材料的晶体结构的方法

    公开(公告)号：US07547359B2

    公开(公告)日：2009-06-16

    申请号：US10549848

    申请日：2004-03-19

    申请人： Atsushi Iwata ,  Jun Akedo

    发明人： Atsushi Iwata ,  Jun Akedo

    IPC分类号： C30B25/12

    CPC分类号： C04B35/581 ,  B01J3/08 ,  C04B2235/762 ,  C04B2235/767 ,  C23C24/04 ,  C30B29/40 ,  C30B29/403 ,  C30B33/00

    摘要： An aerosol of a powder composed of helium carrier gas and particles of a hexagonal aluminum nitride is charged through a transfer pipe 3 into a film deposition chamber 4 whose interior is depressurized by gas evacuation using a vacuum pump 5 to maintain a degree of vacuum of 200-8000 Pa during supply of the carrier gas and the aerosol is blown from a nozzle 6 provided on the end of the transfer pipe 3 inside the film deposition chamber 4 to impinge on a substrate fastened to a substrate holder 7 to make the impact force of the particles at collision with the substrate 4 GPa or greater, thereby transforming the crystal structure of the aluminum nitride from hexagonal to cubic to deposit cubic aluminum nitride on the substrate. As a result, a method of transforming the crystal structure of a Group XIII nitride is provided that enables transformation of a Group XIII nitride to cubic crystal structure using a system of simpler configuration than that used for transforming the crystal structure of a Group XIII nitride by a static pressure application process.

    摘要翻译： 由氦载体和六方氮化铝颗粒组成的粉末的气溶胶通过传输管3装入成膜室4中，该沉积室4的内部使用真空泵5通过气体排出而减压，以保持真空度为200 -8000Pa，并且从设置在成膜室4内的输送管3的端部的喷嘴6喷射气溶胶以撞击固定到基板保持件7的基板上，以使冲击力 与基板发生碰撞的颗粒为GPa以上，从而将氮化铝的晶体结构从六方晶系转变成立方晶片，以在基板上沉积立方氮化铝。 结果，提供了转变第XIII族氮化物的晶体结构的方法，其使得能够使用比用于将第ⅩⅢ族氮化物的晶体结构变换用于将第ⅩⅢ族氮化物的晶体结构变换为 静压施加过程。