公开(公告)号：US20100190401A1

公开(公告)日：2010-07-29

申请号：US12664109

申请日：2008-06-05

申请人： Gerhard Mangold ,  Wolfgang Siefert

发明人： Gerhard Mangold ,  Wolfgang Siefert

IPC分类号： B32B15/08 ,  C23C14/34 ,  B32B27/12

CPC分类号： E04H15/54 ,  C23C14/024 ,  C23C14/205 ,  C23C14/584 ,  E04F10/02 ,  Y10T428/3154 ,  Y10T428/31663 ,  Y10T428/31855 ,  Y10T442/259

摘要： The invention relates to transparent planar material (1) for architectural purposes, having several coatings (2, 2′, 3). Said coating system is selective on wavelength having a high transmission in the visible spectral range and high reflection in the infrared spectral range. The mentioned coatings are metal coatings (3) and metal-oxide coatings (2, 2′).

摘要翻译： 本发明涉及用于建筑目的的透明平面材料（1），其具有多个涂层（2,2'，3）。 所述涂层系统在可见光谱范围内具有高透射率的波长和红外光谱范围内的高反射率是选择性的。 所提到的涂层是金属涂层（3）和金属氧化物涂层（2,2'）。

公开(公告)号：US07722942B2

公开(公告)日：2010-05-25

申请号：US11401853

申请日：2006-04-12

申请人： Yuuki Tauchi ,  Katsutoshi Takagi ,  Junichi Nakai ,  Toshiki Sato

发明人： Yuuki Tauchi ,  Katsutoshi Takagi ,  Junichi Nakai ,  Toshiki Sato

IPC分类号： B32B3/02

CPC分类号： C22C5/06 ,  C22C1/002 ,  C22C5/08 ,  C23C14/024 ,  C23C14/185 ,  C23C14/205 ,  C23C14/3414 ,  C23C14/584 ,  G02B5/0808 ,  G11B7/252 ,  G11B7/2531 ,  G11B7/257 ,  G11B7/258 ,  G11B7/259 ,  G11B7/266 ,  Y10T428/10 ,  Y10T428/1059 ,  Y10T428/1095 ,  Y10T428/12 ,  Y10T428/12431 ,  Y10T428/12896 ,  Y10T428/12924 ,  Y10T428/21 ,  Y10T428/265 ,  Y10T428/31678

摘要： The present invention relates to an Ag alloy film. Particularly, it is preferably used as a reflective film or semi-transmissive reflective film for an optical information recording medium having high thermal conductivity/high reflectance/high durability in the field of optical information recording media, an electromagnetic-shielding film excellent in Ag aggregation resistance, and an optical reflective film on the back of a reflection type liquid crystal display device, or the like. The Ag alloy film of the present invention comprises an Ag base alloy containing Bi and/or Sb in a total amount of 0.005 to 10% (in terms of at %). Further, the present invention relates to a sputtering target used for the deposition of such an Ag alloy film.

公开(公告)号：US20100072057A1

公开(公告)日：2010-03-25

申请号：US12564854

申请日：2009-09-22

申请人： Xiaohong Zhu ,  Emmanuel Defay ,  Eric Fribourg-Blanc

发明人： Xiaohong Zhu ,  Emmanuel Defay ,  Eric Fribourg-Blanc

IPC分类号： H01G9/00 ,  B05D3/02 ,  C23C16/44 ,  C23C14/34 ,  C23C14/35

CPC分类号： H01G4/12 ,  C23C14/088 ,  C23C14/56 ,  C23C14/5806 ,  C23C14/584

摘要： The invention relates to a process for forming a lead-based ceramic oxide dielectric material comprising at least one pyrochlore crystalline phase, which process comprises the following steps: a) a step of depositing at least one amorphous layer of said lead-based ceramic oxide material on a substrate; and b) a crystallization annealing step carried out on said amorphous layer at a temperature not exceeding 550° C., by means of which a lead-based ceramic oxide dielectric material comprising at least one pyrochlore phase is obtained. Application to the fabrication of capacitors on integrated circuits.

摘要翻译： 本发明涉及一种用于形成包含至少一个烧绿石结晶相的铅基陶瓷氧化物介电材料的方法，该方法包括以下步骤：a）沉积所述铅基陶瓷氧化物材料的至少一个非晶层的步骤 在基材上 和b）在不超过550℃的温度下对所述非晶层进行结晶退火步骤，通过该步骤获得包含至少一个烧绿石相的铅基陶瓷氧化物电介质材料。 应用于集成电路上电容器的制造。

公开(公告)号：US20100021763A1

公开(公告)日：2010-01-28

申请号：US12179562

申请日：2008-07-24

申请人： Alan Huang ,  Connie Chunling Liu ,  John Wang ,  Romulo Canilon Ata ,  Shanghsien Alex Rou

发明人： Alan Huang ,  Connie Chunling Liu ,  John Wang ,  Romulo Canilon Ata ,  Shanghsien Alex Rou

IPC分类号： C23C14/34 ,  G11B5/33

CPC分类号： G11B5/82 ,  C03C17/36 ,  C03C17/40 ,  C23C14/025 ,  C23C14/185 ,  C23C14/584 ,  G11B5/656 ,  G11B5/66 ,  G11B5/851

摘要： A magnetic recording medium is presented, characterized by having a nonmonotonicity in the DCD curve, resulting in low dynamic coercivity when writing information to the medium, with high static coercivity and thermal stability during storage. A method is also presented for producing the magnetic recording medium of the present invention.

摘要翻译： 提出了一种磁记录介质，其特征在于在DCD曲线中具有非单调性，当将信息写入介质时具有低的动态矫顽力，具有高的静电矫顽力和储存期间的热稳定性。 还提出了用于制造本发明的磁记录介质的方法。

公开(公告)号：US20080190760A1

公开(公告)日：2008-08-14

申请号：US11838796

申请日：2007-08-14

申请人： XIANMIN TANG ,  Arvind Sundarrajan ,  Daniel Lubben ,  Qian Luo ,  Tza-Jing Gung ,  Anantha Subramani ,  Hua Chung ,  Xinyu Fu ,  Rongjun Wang ,  Yong Cao ,  Jick Yu ,  John Forster ,  Praburam Gopalraja

发明人： XIANMIN TANG ,  Arvind Sundarrajan ,  Daniel Lubben ,  Qian Luo ,  Tza-Jing Gung ,  Anantha Subramani ,  Hua Chung ,  Xinyu Fu ,  Rongjun Wang ,  Yong Cao ,  Jick Yu ,  John Forster ,  Praburam Gopalraja

IPC分类号： C23C14/32

CPC分类号： C23C14/165 ,  C23C14/046 ,  C23C14/358 ,  C23C14/5826 ,  C23C14/584 ,  H01J37/3408 ,  H01J37/3455 ,  H01L21/2855 ,  H01L21/76865 ,  H01L21/76873 ,  H01L21/76877

摘要： An integrated copper deposition process, particularly useful for forming a copper seed layer in a narrow via prior to electrochemical plating of copper, including at least one cycle of sputter deposition of copper followed by sputter etching of the deposited copper, preferably performed in a same sputter chamber. The deposition is performed under conditions promoting high copper ionization fractions and strong wafer biasing to draw the copper ions into the via. The etching may be done with argon ions, preferably inductively excited by an RF coil around the chamber, or by copper ions, which may be formed with high target power and intense magnetron or by use of the RF coil. Two or more cycles of deposition/etch may be performed. A final flash deposition may be performed with high copper ionization and low wafer biasing.

摘要翻译： 一种集成的铜沉积工艺，特别适用于在铜的电化学电镀之前在窄通孔中形成铜籽晶层，包括至少一个铜的溅射沉积循环，然后溅射蚀刻沉积的铜，优选在相同的溅射 房间。 沉积在促进高铜离子化分数和强晶片偏置的条件下进行以将铜离子吸入通孔。 蚀刻可以用氩离子进行，优选地通过围绕室的RF线圈进行感应激励，或者通过可以用高目标功率和强磁控管形成的铜离子或通过使用RF线圈进行。 可以执行两个或更多个沉积/蚀刻循环。 最终的闪蒸沉积可以用高铜离子化和低晶片偏压进行。

公开(公告)号：US20080083612A1

公开(公告)日：2008-04-10

申请号：US11905241

申请日：2007-09-28

申请人： Huan WANG ,  Ka Ming NG ,  Xijun HU ,  Jiyun FENG

发明人： Huan WANG ,  Ka Ming NG ,  Xijun HU ,  Jiyun FENG

IPC分类号： C23C14/00

CPC分类号： C23C14/165 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/08 ,  C23C14/584 ,  C30B11/12 ,  C30B25/02 ,  C30B29/602 ,  H01L23/373 ,  H01L2924/0002 ,  H01L2924/00

摘要： Aligned multi-walled carbon nanotubes were grown on both sides of a metallic or metal-coated substrate by water vapor-assisted chemical vapor deposition. Aligned carbon nanotube films of thickness ranging from 1 μm to over 100 μm were obtained. By manipulating various operating factors—position of substrate in the reactor, amount of water vapor, amount of catalyst, reactor temperature, and growth time, the morphology and thickness of these carbon nanotube films could be adjusted.

摘要翻译： 通过水蒸汽辅助化学气相沉积在金属或金属涂覆的基底的两面上生长对准的多壁碳纳米管。 得到厚度范围从1um到超过100μm的对准碳纳米管薄膜。 通过操作各种操作因素 - 反应器中底物的位置，水蒸汽量，催化剂量，反应器温度和生长时间，可以调节这些碳纳米管膜的形态和厚度。

公开(公告)号：US20080060930A1

公开(公告)日：2008-03-13

申请号：US11788940

申请日：2007-04-23

申请人： Tsutomu Komuro

发明人： Tsutomu Komuro

IPC分类号： C25B5/00

CPC分类号： C23C14/5806 ,  C23C14/584

摘要： A method for manufacturing a magnetic head device that includes a soft magnetic layer includes the steps of forming a plating base layer in the soft magnetic layer through sputtering, and applying, during the forming step, a magnetic field in a direction parallel to an orientation fringe of a wafer in which the magnetic head device is formed.

摘要翻译： 一种制造包括软磁性层的磁头装置的方法包括以下步骤：通过溅射在软磁层中形成电镀基层，并且在成形步骤期间施加与取向条纹平行的方向的磁场 形成磁头装置的晶片。

公开(公告)号：US07338683B2

公开(公告)日：2008-03-04

申请号：US10842619

申请日：2004-05-10

申请人： Venkat Selvamanickam ,  Xuming Xiong

发明人： Venkat Selvamanickam ,  Xuming Xiong

IPC分类号： H01L39/24 ,  B05D5/12 ,  C23C14/08 ,  C23C14/48 ,  C23C14/54

CPC分类号： C23C14/54 ,  C23C14/081 ,  C23C14/46 ,  C23C14/584 ,  G01R19/0061 ,  H01L39/2461

摘要： A method of forming a superconductive device is provided, including providing a substrate having a dimension ratio of not less than about 102, depositing a buffer film to overlie the substrate by ion beam assisted deposition utilizing and ion beam, monitoring spatial ion beam density of the ion beam over a target area, and depositing a superconductor layer to overlie the buffer film. Monitoring may be carried out by utilizing an ion detector having an acceptance angle of not less than 10°.

摘要翻译： 提供一种形成超导体的方法，包括提供尺寸比不小于约10-2的衬底，通过离子束辅助沉积利用和离子束沉积缓冲膜以覆盖衬底 监测离子束在目标区域上的空间离子束密度，以及沉积超导层以覆盖缓冲膜。 可以通过利用具有不小于10°的接受角的离子检测器来进行监视。

公开(公告)号：US20060188750A1

公开(公告)日：2006-08-24

申请号：US11352958

申请日：2006-02-13

申请人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

发明人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

IPC分类号： C23C14/00 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01L43/10 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/025 ,  C23C14/165 ,  C23C14/584 ,  G11B5/3903 ,  H01F10/1936 ,  H01F10/3268 ,  H01F41/302 ,  Y10T428/1121 ,  Y10T428/115 ,  Y10T428/1193

摘要： A magnetic sensing element which allows a high reproduction output and reduction in asymmetry of reproduction waveform to become mutually compatible, as well as a method for manufacturing the same, is provided. In the inside of a second pinned magnetic layer and a free magnetic layer, the atomic percentage of an element Z is decreased in a region close to a non-magnetic material layer. Consequently, the ferromagnetic coupling magnetic field due to magnetostatic coupling (topological coupling) between the pinned magnetic layer and the free magnetic layer can be reduced. At the same time, in a region at a distance from the non-magnetic material layer, the atomic percentage of an element Z is increased, a spin-dependent bulk scattering coefficient is increased, and a product of the amount of change in magnetic resistance and the element area of the magnetic sensing element can be maintained at a high level.

公开(公告)号：US20060182991A1

公开(公告)日：2006-08-17

申请号：US11401853

申请日：2006-04-12

申请人： Yuuki Tauchi ,  Katsutoshi Takagi ,  Junichi Nakai ,  Toshiki Sato

发明人： Yuuki Tauchi ,  Katsutoshi Takagi ,  Junichi Nakai ,  Toshiki Sato

IPC分类号： C09K19/00 ,  B32B3/02 ,  B32B15/04 ,  C22C5/06 ,  B32B15/01 ,  B32B9/00 ,  B32B19/00

CPC分类号： C22C5/06 ,  C22C1/002 ,  C22C5/08 ,  C23C14/024 ,  C23C14/185 ,  C23C14/205 ,  C23C14/3414 ,  C23C14/584 ,  G02B5/0808 ,  G11B7/252 ,  G11B7/2531 ,  G11B7/257 ,  G11B7/258 ,  G11B7/259 ,  G11B7/266 ,  Y10T428/10 ,  Y10T428/1059 ,  Y10T428/1095 ,  Y10T428/12 ,  Y10T428/12431 ,  Y10T428/12896 ,  Y10T428/12924 ,  Y10T428/21 ,  Y10T428/265 ,  Y10T428/31678

摘要： The present invention relates to an Ag alloy film. Particularly, it is preferably used as a reflective film or semi-transmissive reflective film for an optical information recording medium having high thermal conductivity/high reflectance/high durability in the field of optical information recording media, an electromagnetic-shielding film excellent in Ag aggregation resistance, and an optical reflective film on the back of a reflection type liquid crystal display device, or the like. The Ag alloy film of the present invention comprises an Ag base alloy containing Bi and/or Sb in a total amount of 0.005 to 10% (in terms of at %). Further, the present invention relates to a sputtering target used for the deposition of such an Ag alloy film.