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1.发明申请PROCESS FOR FORMING A CERAMIC OXIDE MATERIAL WITH A PYROCHLORE STRUCTURE HAVING A HIGH DIELECTRIC CONSTANT AND IMPLEMENTATION OF THIS PROCESS FOR APPLICATIONS IN MICROELECTRONICS 有权具有高介电常数的四氯化碳结构的陶瓷氧化物材料的制备方法及其在微电子学领域的应用进展公开(公告)号：US20100072057A1
公开(公告)日：2010-03-25
申请号：US12564854
申请日：2009-09-22
CPC分类号： H01G4/12 , C23C14/088 , C23C14/56 , C23C14/5806 , C23C14/584
摘要： The invention relates to a process for forming a lead-based ceramic oxide dielectric material comprising at least one pyrochlore crystalline phase, which process comprises the following steps: a) a step of depositing at least one amorphous layer of said lead-based ceramic oxide material on a substrate; and b) a crystallization annealing step carried out on said amorphous layer at a temperature not exceeding 550° C., by means of which a lead-based ceramic oxide dielectric material comprising at least one pyrochlore phase is obtained. Application to the fabrication of capacitors on integrated circuits.
摘要翻译： 本发明涉及一种用于形成包含至少一个烧绿石结晶相的铅基陶瓷氧化物介电材料的方法，该方法包括以下步骤：a）沉积所述铅基陶瓷氧化物材料的至少一个非晶层的步骤 在基材上 和b）在不超过550℃的温度下对所述非晶层进行结晶退火步骤，通过该步骤获得包含至少一个烧绿石相的铅基陶瓷氧化物电介质材料。 应用于集成电路上电容器的制造。
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2.发明授权Process for forming a ceramic oxide material with a pyrochlore structure having a high dielectric constant and implementation of this process for applications in microelectronics 有权用于形成具有高介电常数的烧绿石结构的陶瓷氧化物材料的方法和用于微电子学应用的该方法的实施方法公开(公告)号：US09406439B2
公开(公告)日：2016-08-02
申请号：US12564854
申请日：2009-09-22
CPC分类号： H01G4/12 , C23C14/088 , C23C14/56 , C23C14/5806 , C23C14/584
摘要： The invention relates to a process for forming a lead-based ceramic oxide dielectric material comprising at least one pyrochlore crystalline phase, which process comprises the following steps: a) a step of depositing at least one amorphous layer of said lead-based ceramic oxide material on a substrate; and b) a crystallization annealing step carried out on said amorphous layer at a temperature not exceeding 550° C., by means of which a lead-based ceramic oxide dielectric material comprising at least one pyrochlore phase is obtained. Application to the fabrication of capacitors on integrated circuits.
摘要翻译： 本发明涉及一种用于形成包含至少一个烧绿石结晶相的铅基陶瓷氧化物介电材料的方法，该方法包括以下步骤：a）沉积所述铅基陶瓷氧化物材料的至少一个非晶层的步骤 在基材上 和b）在不超过550℃的温度下对所述非晶层进行结晶退火步骤，通过该步骤获得包含至少一个烧绿石相的铅基陶瓷氧化物电介质材料。 应用于集成电路上电容器的制造。
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3.发明授权Acoustic wave device including a surface wave filter and a bulk wave filter, and method for making same 有权包括表面波滤波器和体波滤波器的声波器件及其制造方法公开(公告)号：US09106199B2
公开(公告)日：2015-08-11
申请号：US13500614
申请日：2010-10-04
CPC分类号： H03H3/08 , H03H3/02 , H03H2003/0071 , Y10T29/42
摘要： An acoustic wave device comprising at least one surface acoustic wave filter and one bulk acoustic wave filter, the device including, on a substrate comprising a second piezoelectric material: a stack of layers including a first metal layer and a layer of a first monocrystalline piezoelectric material, wherein the stack of layers is partially etched so as to define a first area in which the first and second piezoelectric materials are present and a second area in which the first piezoelectric material is absent; a second metallization at the first area for defining the bulk acoustic wave filter integrating the first piezoelectric material, and a third metallization at the second area for defining the surface acoustic wave filter integrating the second piezoelectric material.
摘要翻译： 一种声波装置，包括至少一个表面声波滤波器和一个体声波滤波器，该装置包括在包括第二压电材料的基板上，包括第一金属层和第一单晶压电材料层 其中，所述层的一部分被部分蚀刻以限定其中存在所述第一和第二压电材料的第一区域和不存在所述第一压电材料的第二区域; 在第一区域处的第二金属化，用于限定集成第一压电材料的体声滤波器，以及在第二区域处的第三金属化，用于限定整合第二压电材料的表面声波滤波器。
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4.发明授权公开(公告)号：US08779651B2
公开(公告)日：2014-07-15
申请号：US13984542
申请日：2012-01-31
IPC分类号： H01L41/09 , H01L41/113
CPC分类号： H02N2/188 , H01L41/113 , H01L41/1136
摘要： An apparatus for converting vibratory mechanical energy into electrical energy includes a mobile mass, a support, first and second beams, the second being piezoelectric, and a junction element. The first beam extends longitudinally between the support and the mass, each of which has a beam end embedded therein. The second beam links the support and the mobile mass. Its elongation stiffness is lower than that of the first beam. The junction element extends between the beams. A first assembly, with a first bending stiffness, comprises the first beam, the second beam, and the junction element. A second assembly consists of the first assembly minus the second beam. Its bending stiffness is less than or equal to half of that of the first assembly.
摘要翻译： 用于将振动机械能转换成电能的装置包括移动质量块，支撑体，第一和第二梁，第二是压电元件和接合元件。 第一梁在支撑件和质量块之间纵向延伸，每个梁具有嵌入其中的梁端。 第二个梁连接支架和移动块。 其伸长刚度低于第一梁的伸长刚度。 连接元件在梁之间延伸。 具有第一弯曲刚度的第一组件包括第一梁，第二梁和接合元件。 第二组件由第一组件减去第二梁组成。 其弯曲刚度小于或等于第一组件的一半。
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5.发明授权Acoustic resonator comprising an electret and method of producing said resonator, application to switchable coupled resonator filters 有权包括驻极体的声谐振器和产生所述谐振器的方法，应用于可切换耦合谐振滤波器公开(公告)号：US08310129B2
公开(公告)日：2012-11-13
申请号：US12975974
申请日：2010-12-22
IPC分类号： H01L41/08
CPC分类号： H03H9/02015 , H03H3/04 , H03H9/02031 , H03H9/173 , H03H9/175 , H03H9/583 , H03H9/584 , H03H9/585 , H03H2003/0414 , H03H2009/02196 , Y10T29/42
摘要： Acoustic resonator comprising an electret, and method of producing said resonator, application to switchable coupled resonator filters.The resonator comprises: at least one piezoelectric layer (30); electrodes (24, 26) on either side of this layer; and at least one electret layer (32) between the electrodes, to apply a permanent electric field to the piezoelectric layer. The intensity of this electric field is determined to shift the resonance frequency of the resonator by a desired value. The piezoelectric layer may contain electrical charges to itself constitute the electret layer.
摘要翻译： 包括驻极体的声谐振器及其制造方法，可应用于可切换耦合的谐振滤波器。 所述谐振器包括：至少一个压电层（30）; 该层两侧的电极（24,26）; 和在电极之间的至少一个驻极体层（32），以向压电层施加永久电场。 确定该电场的强度以将谐振器的谐振频率偏移所需的值。 压电层可以包含电荷本身构成驻极体层。
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公开(公告)号：US07906439B2
公开(公告)日：2011-03-15
申请号：US12488898
申请日：2009-06-22
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： B81C1/00507 , B81B2201/0271 , B81C2201/0115 , B81C2201/0136 , B81C2201/0177 , B81C2203/0136 , B81C2203/0145 , H03H3/0072 , H03H9/175 , H03H9/2436 , Y10S438/933
摘要： The invention provides a method of fabricating and electromechanical device having an active element on at least one substrate, the method having the steps of: a) making a heterogeneous substrate having a first portion, an interface layer, and a second portion, the first portion including one or more buried zones sandwiched between first and second regions formed in a first monocrystalline material, the first region extending to the surface of the first portion, and the second region extending to the interface layer, at least one said buried zone being made at least in part out of a second monocrystalline material so as to make it selectively attackable relative to the first and second regions; b) making openings from the surface of the first portion and through the first region, which openings open out to at least one said buried zone; and c) etching at least part of at least one buried zone to form at least one cavity so as to define at least one active element that is at least a portion of the second region between said cavity and said interface layer; wherein the first and second portions of the substrate are constituted respectively from first and second substrates that are assembled together by bonding, at least one of them including at least one said interface layer over at least a fraction of its surface.
摘要翻译： 本发明提供一种在至少一个基板上具有有源元件的制造方法和机电装置，该方法具有以下步骤：a）制造具有第一部分，界面层和第二部分的非均相基底，第一部分 包括夹在形成于第一单晶材料中的第一和第二区域之间的一个或多个掩埋区域，第一区域延伸到第一部分的表面，第二区域延伸到界面层，至少一个所述掩埋区域 至少部分地由第二单晶材料制成，以使其相对于第一和第二区域选择性地具有攻击性; b）从所述第一部分的表面和所述第一区域制造开口，所述第一区域开放到至少一个所述掩埋区域; 以及c）蚀刻至少一个掩埋区域的至少一部分以形成至少一个空腔，以便限定至少一个有源元件，所述至少一个有源元件是所述腔和所述界面层之间的第二区域的至少一部分; 其中所述基板的第一和第二部分分别由通过粘接而组装在一起的第一和第二基板构成，其中至少一个在其表面的至少一部分上包括至少一个所述界面层。
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公开(公告)号：US08667845B2
公开(公告)日：2014-03-11
申请号：US12937856
申请日：2009-04-14
IPC分类号： G01N29/036
CPC分类号： G01N29/022 , G01N2291/014 , G01N2291/0255 , G01N2291/0256 , G01N2291/0427
摘要： A device for detecting elements in a fluid environment includes at least one acoustic resonator having a surface designed for fixing of elements. The resonator is configured for generating and measuring Lamb waves fostering generation of symmetrical Lamb waves. The device analyzes the resonance frequency of the resonator to determine the variation of the resonance frequency of the symmetrical Lamb waves representative of the presence of the elements.
摘要翻译： 用于检测流体环境中的元件的装置包括至少一个具有设计用于固定元件的表面的声谐振器。 谐振器被配置用于产生和测量促进产生对称兰姆波的兰姆波。 器件分析谐振器的谐振频率，以确定代表元件存在的对称兰姆波的谐振频率的变化。
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8.发明授权公开(公告)号：US08445978B2
公开(公告)日：2013-05-21
申请号：US13128035
申请日：2009-11-25
申请人： Francois Perruchot , Emmanuel Defay , Patrice Rey , Lianjun Liu , Sergio Pacheco
发明人： Francois Perruchot , Emmanuel Defay , Patrice Rey , Lianjun Liu , Sergio Pacheco
IPC分类号： G01P15/08
CPC分类号： B81B3/0072 , B81B2201/032 , H01L41/0933 , H01L41/094
摘要： A micro or nano electromechanical transducer device formed on a semiconductor substrate comprises a movable structure which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure comprising at least one mechanical layer having a first thermal response characteristic and a first mechanical stress response characteristic, at least one layer of the actuating structure, the at least one layer having a second thermal response characteristic different to the first thermal response characteristic and a second mechanical stress response characteristic different to the first mechanical stress response characteristic, a first compensation layer having a third thermal response characteristic and a third mechanical stress characteristic, and a second compensation layer having a fourth thermal response characteristic and a fourth mechanical stress response characteristic. The first and second compensation layers are arranged to compensate a thermal effect produced by the different first and second thermal response characteristics of the mechanical structure and the at least one layer of the actuating structure such that movement of the movable structure is substantially independent of variations in temperature and to adjust a stress effect produced by the different first and second stress response characteristics of the mechanical structure and the at least one layer of the actuating structure such that the movable structure is deflected a predetermined amount relative to the substrate when the electromechanical transducer device is in an inactive state.
摘要翻译： 形成在半导体衬底上的微型或纳米机电换能器装置包括可移动结构，其被布置成响应于致动结构的致动而是可移动的。 可移动结构包括机械结构，其包括具有第一热响应特性和第一机械应力响应特性的至少一个机械层，所述致动结构的至少一层，所述至少一层具有与 第一热响应特性和与第一机械应力响应特性不同的第二机械应力响应特性，具有第三热响应特性和第三机械应力特性的第一补偿层，以及具有第四热响应特性的第二补偿层和 第四机械应力响应特性。 第一和第二补偿层布置成补偿由机械结构和致动结构的至少一个层的不同的第一和第二热响应特性产生的热效应，使得可移动结构的移动基本上与 并且调节由所述机械结构和所述致动结构的所述至少一个层的不同的第一和第二应力响应特性产生的应力效应，使得当所述机电换能器装置 处于非活动状态。
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9.发明授权公开(公告)号：US07993949B2
公开(公告)日：2011-08-09
申请号：US12488854
申请日：2009-06-22
IPC分类号： H01L21/02
CPC分类号： B81C1/00595 , B81B2201/0271 , B81C2201/0109 , B81C2201/014
摘要： The invention relates to a method of making a component from a heterogeneous substrate comprising first and second portions in at least one monocrystalline material, and a sacrificial layer constituted by at least one stack of at least one layer of monocrystalline Si situated between two layers of monocrystalline SiGe, the stack being disposed between said first and second portions of monocrystalline material, wherein the method consists in etching said stack by making: e) at least one opening in the first and/or second portion and the first and/or second layer of SiGe so as to reach the layer of Si; and f) eliminating all or part of the layer of Si.
摘要翻译： 本发明涉及一种从包含至少一种单晶材料中的第一和第二部分的异质衬底制备组分的方法，以及由位于两层单晶之间的至少一层单晶硅的至少一个叠层构成的牺牲层 SiGe，堆叠设置在单晶材料的第一和第二部分之间，其中该方法包括通过以下步骤蚀刻所述堆叠：e）在第一和/或第二部分中的至少一个开口，以及第一和/ SiGe，以达到Si层; 和f）消除Si的全部或部分层。
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公开(公告)号：US20100002358A1
公开(公告)日：2010-01-07
申请号：US12311529
申请日：2007-10-16
申请人： Emmanuel Defay , Julie Guillan , Serge Blonkowski
发明人： Emmanuel Defay , Julie Guillan , Serge Blonkowski
CPC分类号： H01G4/1218 , H01G4/1254 , H01G4/33 , H01L27/016 , H01L28/40 , H01L28/56
摘要： The dielectric of a capacitor is formed by superposition of at least two thin layers made from the same metal oxide, respectively in crystalline and amorphous form and respectively presenting quadratic voltage coefficients of capacitance of opposite signs. The respective thicknesses da and dc of the amorphous and crystalline thin layers comply with the following general formulas: d a = ɛ 0 ɛ a C s 0 ( 1 1 - ( ɛ c ɛ a ) 2 γ a γ c ) and d c = ɛ 0 ɛ c C s 0 ( 1 1 - ( ɛ a ɛ c ) 2 γ c γ a ) in which ε0 corresponds to the electric constant, εc and εa correspond to the relative permittivity of the metal oxide respectively in crystalline form and in amorphous form, Cs0 corresponds to the total surface capacitance at zero field, and γc and γa correspond to the quadratic coefficient of capacitance with respect to the electric field of the metal oxide respectively in crystalline form and in amorphous form.
摘要翻译： 电容器的电介质通过分别由相同金属氧化物制成的至少两个薄层分别以结晶和非晶形式叠加并且分别呈现相反符号的电容的二次电压系数而形成。 无定形和结晶薄层的各自的厚度da和dc符合以下通式：da =εεεa C s（0）（1 1 - （εcεa）2γ伽马c） 其中epsilon对应于电常数，epsilon和epsilona对应于 金属氧化物的结晶形式和无定形形式的相对介电常数Cs0对应于零场的总表面电容，并且gammac和γa分别对应于分别在金属氧化物中的金属氧化物的电场的二次系数 形式和非晶形式。
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