公开(公告)号：US11774850B2

公开(公告)日：2023-10-03

申请号：US17062214

申请日：2020-10-02

Applicant: CANON KABUSHIKI KAISHA

Inventor： Naoki Funabashi

IPC: G03F7/00 ,  G03F9/00 ,  H01L21/67 ,  H01L21/68

CPC classification number: G03F7/0002 ,  G03F9/7042 ,  G03F9/7076 ,  G03F9/7084 ,  G03F9/7088 ,  H01L21/6715 ,  H01L21/681

Abstract: A method of disposing a substrate on a holding unit using a pattern forming apparatus which forms a pattern on the substrate, the pattern forming apparatus comprising: a stage, the holding unit removably attached to the stage and configured to suck and hold the substrate, an optical system, and configured to detect an alignment mark of the substrate from a suction surface side of the substrate, the optical system having plural optical elements, and a detection unit configured to detect a reference mark for measuring a position of a detection field of the optical system, the method comprising: detecting a position of the reference mark, and disposing the substrate on the holding unit using the detected position of the reference mark so that the alignment mark of the substrate detected from the suction surface side of the substrate by the optical system is disposed in the detection field.

公开(公告)号：US20230288797A1

公开(公告)日：2023-09-14

申请号：US17897030

申请日：2022-08-26

Applicant: KIOXIA CORPORATION

Inventor： Hirokazu MIYOSHI ,  Masayuki HATANO

IPC: G03F7/00 ,  H01L21/02

CPC classification number: G03F7/0002 ,  H01L21/02348

Abstract: According to one embodiment, an imprint method for a substrate having a plurality of shot regions includes performing a first process on each target shot region in the plurality of shot regions and performing a second process on a non-target shot region in the plurality of shot regions. The first process includes pressing a template against resin in the target shot region to transfer a pattern to the resin, curing the resin, and releasing the template from the cured resin while supplying inert gas towards the substrate from an outer edge side of the template. The second process includes causing the template to approach the non-target shot region without coming into contact with resin in the non-target shot region, and moving the template away from the resin in the non-target shot region while supplying inert gas towards the substrate from the outer edge side of the template.

公开(公告)号：US11747723B2

公开(公告)日：2023-09-05

申请号：US17585316

申请日：2022-01-26

Applicant: NORTHWESTERN UNIVERSITY

Inventor： Chad A. Mirkin ,  Rustin Golnabi ,  Eun Bi Oh ,  David Alan Walker

IPC: G03F7/00 ,  B29C33/38 ,  C25D5/02 ,  C25D17/00 ,  C25D17/12

CPC classification number: G03F7/0002 ,  B29C33/38 ,  C25D5/02 ,  C25D17/00 ,  C25D17/12

Abstract: Disclosed herein is a massively parallel patterning tool for the deposition of single metals or metal alloys with size and composition control. Methods of the disclosure use a hydrogel array of pyramidal pen tips as a medium for localized electrodeposition, in conjunction with a scanning probe lithography platform and a three-electrode cell. This versatile technique can be used for high-throughput 3D printing, biomolecule patterning, or screening of catalyst nanoparticles or thin films.

公开(公告)号：US11720020B2

公开(公告)日：2023-08-08

申请号：US16984535

申请日：2020-08-04

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Jun Hatakeyama

IPC: G03F7/038 ,  G03F7/26 ,  G03F7/00 ,  G03F7/039

CPC classification number: G03F7/0382 ,  G03F7/0002 ,  G03F7/0392 ,  G03F7/26

Abstract: A resist composition comprising a base polymer and a salt is provided. The salt consisting of an anion derived from a carboxylic acid having an iodized or brominated hydrocarbyl group and a cation derived from a 2,5,8,9-tetraaza-1-phosphabicyclo[3.3.3]undecane, biguanide or phosphazene compound. The resist composition exerts a high sensitizing effect and an acid diffusion suppressing effect, causes no film thickness loss after development, and is improved in resolution, LWR and CDU when a pattern is formed therefrom by lithography.

公开(公告)号：US11709430B2

公开(公告)日：2023-07-25

申请号：US16899367

申请日：2020-06-11

Applicant: CANON KABUSHIKI KAISHA

Inventor： Tomonori Otani ,  Toshiki Ito ,  Tomohiro Saito ,  Kouhei Nagane ,  Kenichi Ueyama

IPC: G03F7/20 ,  B29C33/38 ,  B29C33/42 ,  G03F7/00 ,  G03F7/11 ,  G03F7/16 ,  H10B41/20 ,  H10B41/35 ,  H10B43/10 ,  H10B43/20 ,  H10B43/35 ,  H10B41/10

CPC classification number: G03F7/2012 ,  B29C33/3842 ,  B29C33/424 ,  G03F7/0002 ,  G03F7/11 ,  G03F7/161 ,  H10B41/10 ,  H10B41/20 ,  H10B41/35 ,  H10B43/10 ,  H10B43/20 ,  H10B43/35

Abstract: A method for manufacturing a cured product pattern of a curable composition includes the steps of, in sequence, depositing a droplet of the curable composition onto a substrate; bringing a mold having an uneven pattern formed in a surface thereof into contact with the curable composition; curing the curable composition; and releasing a cured product of the curable composition from the mold. The mold has a recess having a bottom surface and a stair structure arranged to form an opening surface that becomes wider from the bottom surface toward the surface of the mold. In the contact step, the curable composition comes into contact with the stair portion after a top of the droplet comes into contact with the bottom surface.

公开(公告)号：US11702695B2

公开(公告)日：2023-07-18

申请号：US17662124

申请日：2022-05-05

Applicant: Illumina, Inc.

Inventor： Yir-Shyuan Wu ,  Yan-You Lin ,  M. Shane Bowen ,  Cyril Delattre ,  Fabien Abeille ,  Tarun Khurana ,  Arnaud Rival ,  Poorya Sabounchi ,  Dajun Yuan ,  Maria Candelaria Rogert Bacigalupo

IPC: B05D3/06 ,  G03F7/00 ,  G03F7/20 ,  C12Q1/6874 ,  C12Q1/6806

CPC classification number: C12Q1/6874 ,  B05D3/06 ,  C12Q1/6806 ,  G03F7/0002 ,  G03F7/20

Abstract: Embodiments provided herewith are directed to self-assembled methods of preparing a patterned surface for sequencing applications including, for example, a patterned flow cell or a patterned surface for digital fluidic devices. The methods utilize photolithography to create a patterned surface with a plurality of microscale or nanoscale contours, separated by hydrophobic interstitial regions, without the need of oxygen plasma treatment during the photolithography process. In addition, the methods avoid the use of any chemical or mechanical polishing steps after the deposition of a gel material to the contours.

公开(公告)号：US20230221636A1

公开(公告)日：2023-07-13

申请号：US18180949

申请日：2023-03-09

Applicant: CANON KABUSHIKI KAISHA

Inventor： JUN KATO

IPC: G03F7/00 ,  B05C5/02 ,  B29C59/02

CPC classification number: G03F7/0002 ,  B05C5/0291 ,  B29C59/026 ,  B29C59/022 ,  H01L21/31058

Abstract: The present invention provides a film forming method of forming a film on a substrate, wherein the substrate includes a region including a first concave portion and a second concave portion, the first concave portion has a width larger than that of the second concave portion, and the film forming method includes: selectively supplying a first material into the first concave portion and molding the first material; and supplying a second material onto the region and molding the second material, such that the second concave portion is filled with the second material and a planarization film of the second material is formed over all of the region.

公开(公告)号：US11698584B2

公开(公告)日：2023-07-11

申请号：US17099711

申请日：2020-11-16

Applicant: CANON KABUSHIKI KAISHA

Inventor： Osamu Yasunobe

IPC: G03F7/20 ,  G03F7/00 ,  H01L21/683 ,  H01L21/687

CPC classification number: G03F7/0002 ,  G03F7/70733 ,  H01L21/6838 ,  H01L21/68707

Abstract: The present invention provides a conveyance apparatus that conveys an object to a processing space in which processing is performed using the object, including a hand configured to hold the object, and a moving unit configured to freely move the hand in the processing space, wherein the hand includes a suction hole provided in a surface different from a holding surface configured to come into contact with the object and hold the object, and a first flow path configured to allow the suction hole and an exhaust source to communicate with each other, and exhaust an atmosphere around the suction hole sucked via the exhaust source and the suction hole to an outside.

公开(公告)号：US20230194995A1

公开(公告)日：2023-06-22

申请号：US17556441

申请日：2021-12-20

Applicant: CANON KABUSHIKI KAISHA

Inventor： Nilabh K. Roy

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70625 ,  G03F7/0002 ,  G03F7/70558 ,  G03F7/027

Abstract: System and method for generating a set of illumination patterns. Intensity distribution for each pixel in an array of pixels of actinic radiation at a plane of a shaping surface while it is in contact with formable material on a substrate is received. Predicted dosage pattern based on the intensity distribution for each pixel and a set of operational parameters is computed. Set of operational parameters may include sets of: modulation maps; positional shifts of an array of illuminators; duty cycles. Curing dose variation metric based on the predicted dosage pattern is determined. The curing dose variation metric is compared to a threshold. Different sets of operational parameters may be used to create an operational parameters superset. The curing set of operational parameters in the operational parameters superset is selected based on a comparison of the curing dose variation metric to a dose variation threshold.

公开(公告)号：US20230187207A1

公开(公告)日：2023-06-15

申请号：US17814241

申请日：2022-07-22

Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.

Inventor： Kanyu CAO

IPC: H01L21/027 ,  H01L21/02 ,  G03F7/20 ,  G03F7/42 ,  G03F7/00

CPC classification number: H01L21/0274 ,  H01L21/02112 ,  G03F7/70 ,  G03F7/42 ,  G03F7/0002

Abstract: The present disclosure relates to the technical field of semiconductors, and provides a method of processing a photoresist layer, and a photoresist layer. The method of processing a photoresist layer includes: forming a photoresist layer on a target layer, where the photoresist layer includes a first part close to the target layer and a second part away from the target layer; performing first exposure processing on the photoresist layer, and forming an exposure image in the first part of the photoresist layer; processing the second part of the photoresist layer by using a first process, such that the second part forms a third part, where a photosensitivity of the third part is higher than that of the first part; and stripping the third part.