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    PHOTOELECTRIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING THE SAME
    61.
    发明申请
    PHOTOELECTRIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    光电转换元件及其制造方法

    公开(公告)号：US20160285022A1

    公开(公告)日：2016-09-29

    申请号：US15070776

    申请日：2016-03-15

    申请人： Kabushiki Kaisha Toshiba

    发明人： Takeshi GOTANDA ,  Hyangmi JUNG ,  Atsuko IIDA ,  Mitsunaga SAITO ,  Yoshihiko NAKANO

    IPC分类号： H01L51/44 ,  H01L51/00 ,  H01L51/42

    CPC分类号： H01L51/0012 ,  H01L51/0043 ,  H01L51/4233 ,  H01L51/4273 ,  H01L2031/0344 ,  H01L2251/303 ,  H01L2251/308 ,  Y02E10/549 ,  Y02P70/521

    摘要： According to one embodiment, a photoelectric conversion element includes a first electrode, a second electrode, a photoelectric conversion layer and a first layer. The photoelectric conversion layer is provided between the first electrode and the second electrode. The first layer is provided between the first electrode and the photoelectric conversion layer. The first layer includes at least a first metal oxide. The first layer has a plurality of orientation planes. At least one of the orientation planes satisfies the relationship L1>L2, where L1 is a length of the one of the plurality of orientation planes, and L2 is a thickness of the first layer along a first direction. The first direction is from the first electrode toward the second electrode.

    摘要翻译： 根据一个实施例，光电转换元件包括第一电极，第二电极，光电转换层和第一层。 光电转换层设置在第一电极和第二电极之间。 第一层设置在第一电极和光电转换层之间。 第一层包括至少第一金属氧化物。 第一层具有多个取向平面。 至少一个取向面满足L1> L2的关系，其中L1是多个取向面中的一个的长度，L2是沿着第一方向的第一层的厚度。 第一方向是从第一电极到第二电极。

    OPTICAL DETECTOR AND METHOD FOR MANUFACTURING THE SAME
    63.
    发明申请
    OPTICAL DETECTOR AND METHOD FOR MANUFACTURING THE SAME 有权
    光学检测器及其制造方法

    公开(公告)号：US20160099429A1

    公开(公告)日：2016-04-07

    申请号：US14787909

    申请日：2014-06-05

    申请人： BASF SE

    发明人： Ingmar BRUDER ,  Robert SEND ,  Stephan IRLE ,  Erwin THIEL

    IPC分类号： H01L51/44 ,  H04N5/225 ,  G01S17/06 ,  H01L51/42 ,  H01L27/30

    CPC分类号： H01L51/441 ,  G01S17/023 ,  G01S17/06 ,  G01S17/08 ,  H01L27/285 ,  H01L27/307 ,  H01L51/4213 ,  H01L51/4226 ,  H01L51/442 ,  H01L2031/0344 ,  H04N5/2254 ,  H04N5/372 ,  H04N5/374 ,  H04N5/378

    摘要： An optical detector (110) is disclosed. The optical detector (110) comprises: —an optical sensor (112), having a substrate (116) and at least one photosensitive layer setup (118) disposed thereon, the photosensitive layer setup (118) having at least one first electrode (120), at least one second electrode (130) and at least one photovoltaic material (140) sandwiched in between the first electrode (120) and the second electrode (130), wherein the photovoltaic material (140) comprises at least one organic material, wherein the first electrode (120) comprises a plurality of first electrode stripes (124) and wherein the second electrode (130) comprises a plurality of second electrode stripes (134), wherein the first electrode stripes (124) and the second electrode stripes (134) intersect such that a matrix (142) of pixels (144) is formed at intersections of the first electrode stripes (124) and the second electrode stripes (134); and —at least one readout device (114), the readout device (114) comprising a plurality of electrical measurement devices (154) being connected to the second electrode stripes (134) and a switching device (160) for subsequently connecting the first electrode stripes (124) to the electrical measurement devices (154).

    摘要翻译： 公开了一种光学检测器（110）。 光学检测器（110）包括： - 具有衬底（116）和设置在其上的至少一个感光层设置（118）的光学传感器（112），所述感光层设置（118）具有至少一个第一电极（120） ），至少一个第二电极（130）和夹在第一电极（120）和第二电极（130）之间的至少一个光伏材料（140），其中光伏材料（140）包括至少一种有机材料， 其中所述第一电极（120）包括多个第一电极条（124），并且其中所述第二电极（130）包括多个第二电极条（134），其中所述第一电极条（124）和所述第二电极条（ 134）相交，使得像素（144）的矩阵（142）形成在第一电极条（124）和第二电极条（134）的交点处; 和至少一个读出装置（114），所述读出装置（114）包括连接到所述第二电极条（134）的多个电测量装置（154）和开关装置（160），用于随后将所述第一电极 （124）连接到电测量装置（154）。

    RADIATION DETECTOR
    68.
    发明申请
    RADIATION DETECTOR 审中-公开
    辐射探测器

    公开(公告)号：US20150255636A1

    公开(公告)日：2015-09-10

    申请号：US14715614

    申请日：2015-05-19

    申请人： FUJIFILM CORPORATION

    发明人： Seiji YAMASHITA ,  Toshihiro ISE

    IPC分类号： H01L31/0272 ,  H01L31/117

    CPC分类号： H01L31/0272 ,  H01L27/14676 ,  H01L31/085 ,  H01L31/095 ,  H01L31/115 ,  H01L31/117 ,  H01L31/20 ,  H01L51/0037 ,  H01L51/0046 ,  H01L51/4213 ,  H01L2031/0344 ,  Y02E10/549

    摘要： A radiation detector (10) which has a multilayer structure that includes: a first electrode (34); a second electrode (49) that is disposed so as to face the first electrode; a selenium layer (48) that is disposed between the first electrode and the second electrode and contains amorphous selenium; a first blocking organic layer (38) that is adjacent to the selenium layer, between the first electrode and the selenium layer, and that contains a hole transport material having an electron affinity of 3.7 eV or less; and a second blocking organic layer (37) that is adjacent to the selenium layer, between the second electrode and the selenium layer, and that contains an electron transport material having an ionization potential of 5.9 eV or more. This radiation detector (10) has low dark current, excellent durability, and less afterimages.

    摘要翻译： 一种具有多层结构的放射线检测器（10），包括：第一电极（34）; 设置成与第一电极相对的第二电极（49）; 设置在第一电极和第二电极之间并含有非晶硒的硒层（48）; 位于第一电极和硒层之间的与硒层相邻的第一阻挡有机层（38），并且包含电子亲和力为3.7eV以下的空穴传输材料; 以及与第二电极和硒层之间的硒层相邻的第二阻挡有机层（37），并且包含电离势为5.9eV以上的电子传输材料。 该辐射检测器（10）具有低暗电流，优异的耐久性和较少的残影。

    OPTOELECTRONIC DEVICE COMPRISING PEROVSKITES
    69.
    发明申请
    OPTOELECTRONIC DEVICE COMPRISING PEROVSKITES 审中-公开
    包含PEROVSKITES的光电器件

    公开(公告)号：US20150129034A1

    公开(公告)日：2015-05-14

    申请号：US14401452

    申请日：2013-05-20

    申请人： ISIS INNOVATION LIMITED

    发明人： Henry Snaith ,  Michael Lee

    IPC分类号： H01L31/0264 ,  H01G9/20 ,  H01L51/42

    CPC分类号： H01L31/0264 ,  H01G9/2004 ,  H01G9/2036 ,  H01L51/0032 ,  H01L51/4213 ,  H01L51/422 ,  H01L51/4226 ,  H01L2031/0344 ,  H01L2251/306 ,  Y02E10/549 ,  Y02P70/521

    摘要： The invention provides an optoelectronic device comprising a porous material, which porous material comprises a semiconductor comprising a perovskite. The porous material may comprise a porous perovskite. Thus, the porous material may be a perovskite material which is itself porous. Additionally or alternatively, the porous material may comprise a porous dielectric scaffold material, such as alumina, and a coating disposed on a surface thereof, which coating comprises the semiconductor comprising the perovskite. Thus, in some embodiments the porosity arises from the dielectric scaffold rather than from the perovskite itself. The porous material is usually infiltrated by a charge transporting material such as a hole conductor, a liquid electrolyte, or an electron conductor. The invention further provides the use of the porous material as a semiconductor in an optoelectronic device. Further provided is the use of the porous material as a photosensitizing, semiconducting material in an optoelectronic device. The invention additionally provides the use of a layer comprising the porous material as a photoactive layer in an optoelectronic device. Further provided is a photoactive layer for an optoelectronic device, which photoactive layer comprises the porous material.

    摘要翻译： 本发明提供一种包括多孔材料的光电子器件，该多孔材料包括包含钙钛矿的半导体。 多孔材料可以包括多孔钙钛矿。 因此，多孔材料可以是本身是多孔的钙钛矿材料。 另外或替代地，多孔材料可以包括多孔介电支架材料，例如氧化铝，以及设置在其表面上的涂层，该涂层包括包含钙钛矿的半导体。 因此，在一些实施方案中，孔隙率来自电介质支架而不是钙钛矿本身。 多孔材料通常由诸如空穴导体，液体电解质或电子导体的电荷输送材料渗透。 本发明还提供了多孔材料在光电器件中作为半导体的用途。 进一步提供的是使用多孔材料作为光电子器件中的光敏半导体材料。 本发明另外提供了包含多孔材料的层作为光电器件中的光活性层的用途。 还提供了一种用于光电子器件的光敏层，该光敏层包括多孔材料。

    OPTOELECTRONIC DEVICE COMPRISING POROUS SCAFFOLD MATERIAL AND PEROVSKITES
    70.
    发明申请
    OPTOELECTRONIC DEVICE COMPRISING POROUS SCAFFOLD MATERIAL AND PEROVSKITES 审中-公开
    包含多孔SCAFF材料和PEROVSKITES的光电子器件

    公开(公告)号：US20150122314A1

    公开(公告)日：2015-05-07

    申请号：US14401394

    申请日：2013-05-20

    申请人： ISIS INNOVATION LIMITED

    发明人： Henry Snaith ,  Michael Lee

    IPC分类号： H01L51/42 ,  H01L31/032

    CPC分类号： H01L51/4213 ,  H01L31/0324 ,  H01L51/0032 ,  H01L51/422 ,  H01L51/4226 ,  H01L2031/0344 ,  Y02E10/549

    摘要： The invention provides an optoelectronic device comprising: (i) a porous dielectric scaffold material; and (ii) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material. Typically the semiconductor, which may be a perovskite, is disposed on the surface of the porous dielectric scaffold material, so that it is supported on the surfaces of pores within the scaffold. In one embodiment, the optoelectronic device is an optoelectronic device which comprises a photoactive layer, wherein the photoactive layer comprises: (a) said porous dielectric scaffold material; (b) said semiconductor; and (c) a charge transporting material. The invention further provides the use, as a photoactive material in an optoelectronic device, of: (i) a porous dielectric scaffold material; and (ii) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material. Further provided is the use of a layer comprising: (i) a porous dielectric scaffold material; and (ii) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material; as a photoactive layer in an optoelectronic device. In another aspect, the invention provides a photoactive layer for an optoelectronic device comprising (a) a porous dielectric scaffold material; (b) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material; and (c) a charge transporting material.

    摘要翻译： 本发明提供了一种光电器件，其包括：（i）多孔介电支架材料; 和（ii）与支架材料接触的带隙小于或等于3.0eV的半导体。 通常，半导体（其可以是钙钛矿）设置在多孔介电支架材料的表面上，使得其支撑在支架内的孔的表面上。 在一个实施例中，光电子器件是包括光敏层的光电子器件，其中光活性层包括：（a）所述多孔介电支架材料; （b）所述半导体; 和（c）电荷输送材料。 本发明还提供了作为光电子器件中的光活性材料的用途：（i）多孔介电支架材料; 和（ii）与支架材料接触的带隙小于或等于3.0eV的半导体。 还提供了使用一层，其包括：（i）多孔介电支架材料; 和（ii）与支架材料接触的带隙小于或等于3.0eV的半导体; 作为光电子器件中的光活性层。 在另一方面，本发明提供了一种用于光电子器件的光敏层，包括（a）多孔介电支架材料; （b）与支架材料接触的带隙小于或等于3.0eV的半导体; 和（c）电荷输送材料。