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公开(公告)号：US20210359099A1
公开(公告)日：2021-11-18
申请号：US17320183
申请日：2021-05-13
Applicant: Massachusetts Institute of Technology
Inventor： Pin-Chun Shen , Jing Kong
Abstract: Devices, such as transistors, that use bismuth to create ohmic contacts are provided, as are methods of manufacturing the same. The transistors, such as field-effect transistors, can include one or more two-dimensional materials, and electrical contact areas can be created on the two-dimensional material(s) using bismuth. The bismuth can help to provide energy-barrier free, ohmic contacts, and the resulting devices can have performance levels that rival or exceed state-of-the-art devices that utilize three-dimensional materials, like silicon. The two-dimensional materials can include transition metal dichalcogenides, such as molybdenum disulfide.
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公开(公告)号：US20150311363A1
公开(公告)日：2015-10-29
申请号：US14647422
申请日：2013-11-26
Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
Inventor： Hyesung Park , Sehoon Chang , Jing Kong , Silvija Gradecak
IPC: H01L31/0224 , H01L31/0296 , H01L51/00 , H01L51/44 , H01L31/032 , H01L31/18 , H01L31/0352 , H01L51/42
CPC classification number: H01L31/022483 , B82Y10/00 , C08G61/126 , C08G2261/1412 , C08G2261/3223 , C08G2261/91 , H01L31/0296 , H01L31/0324 , H01L31/035218 , H01L31/035227 , H01L31/1884 , H01L33/40 , H01L51/0021 , H01L51/0036 , H01L51/0037 , H01L51/0045 , H01L51/4233 , H01L51/4266 , H01L51/442 , H01L2031/0344 , H01L2251/305 , Y02E10/549 , Y02P70/521
Abstract: A transparent electrode can include a graphene sheet on a substrate, a layer including a conductive polymer disposed over the graphene sheet, and a plurality of semiconducting nanowires, such as ZnO nanowires, disposed over the layer including the conductive polymer.
Abstract translation: 透明电极可以包括在基板上的石墨烯片，包括设置在石墨烯片上的导电聚合物的层，以及设置在包括导电聚合物的层上的多个半导体纳米线，例如ZnO纳米线。
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公开(公告)号：US20130340533A1
公开(公告)日：2013-12-26
申请号：US13680188
申请日：2012-11-19
Applicant: Massachusetts Institute of Technology
Inventor： Mario Hofmann , Jing Kong
IPC: G01L1/22
Abstract: Strain gauge. The gauge includes a substrate and a thin film of overlapping, two-dimensional flakes deposited on the substrate. Structure responsive to conductance across the film is provided whereby a strain induced change in overlap area between neighboring flakes results in a change in conductance across the film. In a preferred embodiment, the two-dimensional flakes are graphene.
Abstract translation: 应变计 该计量器包括沉积在基底上的基底和重叠的二维薄片的薄膜。 提供响应穿过膜的电导的结构，由此在相邻薄片之间的重叠面积的应变引起的变化导致跨越薄膜的电导的变化。 在优选实施例中，二维薄片是石墨烯。
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公开(公告)号：US20190390950A1
公开(公告)日：2019-12-26
申请号：US16449410
申请日：2019-06-23
Applicant: Massachusetts Institute of Technology
Inventor： Yuxuan Lin , Xiang Ji , Tomas Palacios , Jing Kong
Abstract: A thermo-mechanical bolometer includes a substrate and a sensing component mounted on the substrate. The sensing element comprises (a) at least one thermal-actuation component mounted in parallel with the substrate and (b) a strain sensor mounted on the at least one layer of thermal-actuation component. The at least one thermal-actuation component alone or in combination (a) absorbs electromagnetic waves and converts energy from absorbed electromagnetic waves into a change in temperature and (b) converts the change in temperature into a deformation of the at least one layer. The strain sensor comprises a layer of fragments with a gap space between the fragments, wherein the strain sensor senses the deformation or mechanical movement and exhibits a change in electrical resistance in response to the sensed deformation or mechanical movement.
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公开(公告)号：US20190330735A1
公开(公告)日：2019-10-31
申请号：US16088046
申请日：2018-04-17
Applicant: Massachusetts Institute of Technology
Inventor： Brian J. Modtland , Jing Kong , Marc A. Baldo , Efren Navarro-Moratalla , Xiang Ji
IPC: C23C16/30
Abstract: A two-dimensional transition-metal dichalcogenide layer is grown by reacting a non- or low-volatile source material with a volatilized halogen or halide compound to produce a volatilized composition comprising at least one reaction product. The volatilized composition is flowed through an open chamber of a tube furnace with a temperature gradient, wherein the temperature changes along a path through which the volatilized composition flows through the open chamber of the tube furnace. Where the temperature along the path in the open chamber is in a reaction-temperature range, the volatilized composition is deposited as a two-dimensional crystalline transition-metal dichalcogenide layer.
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Patent Agency Ranking
公开(公告)号：US20170217777A1
公开(公告)日：2017-08-03
申请号：US15419090
申请日：2017-01-30
Applicant: Massachusetts Institute of Technology
Inventor： Jin-Yong Hong , Jing Kong
CPC classification number: C01B32/186 , B82Y40/00 , C01B32/194 , C01B2204/04
Abstract: A two-dimensional film (such as graphene) is formed on a surface of a growth substrate. A first surface of the two-dimensional film adheres to the growth substrate, and a second surface of the two-dimensional film is then coated with a conforming carrier layer comprising ethylene vinyl acetate. The surface of the growth substrate is etched to release the two-dimensional film with the conforming carrier layer from the growth substrate, wherein the conforming carrier layer maintains the integrity of the two-dimensional film during and after its release from the growth substrate. The first surface of the two-dimensional film with the conforming carrier layer coating is then applied onto a target substrate to form a graphene coating on the target substrate. The conforming carrier layer is then removed from the two-dimensional film by exposing the conforming carrier layer to a solvent while the two-dimensional film is coating the target substrate.
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公开(公告)号：US20170170260A1
公开(公告)日：2017-06-15
申请号：US15373687
申请日：2016-12-09
Applicant: Massachusetts Institute of Technology
Inventor： Mildred S. Dresselhaus , Jing Kong , Tomas A. Palacios , Xi Ling , Yuxuan Lin
CPC classification number: H01L29/068 , H01L21/02112 , H01L21/0242 , H01L21/02422 , H01L21/02527 , H01L21/0254 , H01L21/02551 , H01L21/02568 , H01L21/0259 , H01L21/0262 , H01L21/02642 , H01L21/02645 , H01L21/8256 , H01L27/0207 , H01L27/088 , H01L29/0665 , H01L29/24 , H01L29/267 , H01L29/45 , H01L29/6603 , H01L29/778 , H01L29/861
Abstract: A two-dimensional heterostructure is synthesized by producing a patterned first two-dimensional material on a growth substrate. The first two-dimensional material is patterned to define at least one void through which an exposed region of the growth substrate is exposed. Seed molecules are selectively deposited either on the exposed region of the growth substrate or on the patterned first two-dimensional material. A second two-dimensional material that is distinct from the first two-dimensional material is then grown from the deposited seed molecules.
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公开(公告)号：US11060186B2
公开(公告)日：2021-07-13
申请号：US16382407
申请日：2019-04-12
Applicant: Massachusetts Institute of Technology
Inventor： Jing Kong , Qingqing Ji , Zhenfei Gao
IPC: C23C16/30 , C23C16/08 , C23C16/455
Abstract: In a method provided herein for forming a chalcogenide film on a substrate, an elemental solid is exposed to a hydrogen halide gas in a heated reaction environment at a temperature at which the hydrogen halide gas promotes the elemental solid to evolve into an elemental halide-based gas. The elemental halide-based gas is then exposed to a chalcogen gas provided in the heated reaction environment, at a temperature at which the elemental halide-based gas is reactive with the chalcogen gas to produce a solid chalcogenide reaction product. A substrate is provided in the heated reaction environment for deposition thereon of a solid film of the solid chalcogenide reaction product that results from exposure of the elemental halide-based gas to the chalcogen gas in the heated reaction environment.
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公开(公告)号：US10109752B2
公开(公告)日：2018-10-23
申请号：US14647422
申请日：2013-11-26
Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
Inventor： Hyesung Park , Sehoon Chang , Jing Kong , Silvija Gradecak
IPC: H01L51/00 , H01L51/44 , H01L51/42 , H01L31/18 , H01L31/0224 , C08G61/12 , B82Y10/00 , H01L31/0296 , H01L31/032 , H01L31/0352 , H01L33/40 , H01L31/0256
Abstract: A transparent electrode can include a graphene sheet on a substrate, a layer including a conductive polymer disposed over the graphene sheet, and a plurality of semiconducting nanowires, such as ZnO nanowires, disposed over the layer including the conductive polymer.
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公开(公告)号：US09812525B2
公开(公告)日：2017-11-07
申请号：US15373687
申请日：2016-12-09
Applicant: Massachusetts Institute of Technology
Inventor： Mildred S. Dresselhaus , Jing Kong , Tomas A. Palacios , Xi Ling , Yuxuan Lin
CPC classification number: H01L29/068 , H01L21/02112 , H01L21/0242 , H01L21/02422 , H01L21/02527 , H01L21/0254 , H01L21/02551 , H01L21/02568 , H01L21/0259 , H01L21/0262 , H01L21/02642 , H01L21/02645 , H01L21/8256 , H01L27/0207 , H01L27/088 , H01L29/0665 , H01L29/24 , H01L29/267 , H01L29/45 , H01L29/6603 , H01L29/778 , H01L29/861
Abstract: A two-dimensional heterostructure is synthesized by producing a patterned first two-dimensional material on a growth substrate. The first two-dimensional material is patterned to define at least one void through which an exposed region of the growth substrate is exposed. Seed molecules are selectively deposited either on the exposed region of the growth substrate or on the patterned first two-dimensional material. A second two-dimensional material that is distinct from the first two-dimensional material is then grown from the deposited seed molecules.
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