公开(公告)号：US20230292019A1

公开(公告)日：2023-09-14

申请号：US18199659

申请日：2023-05-19

申请人： Snap Inc.

发明人： Sagi Katz ,  Netanel Kligler ,  Gilad Refael

IPC分类号： H04N25/57

CPC分类号： H04N25/57

摘要： A method for increasing a dynamic range of a dual-pixel image sensor is described. The method includes detecting an intensity level of a full pixel from a plurality of pixels of an optical sensor, one or more full pixels of the plurality of pixels includes at least two sub-pixels, detecting an intensity level of one or more sub-pixels, detecting that the intensity level of the full pixel of the optical sensor has reached a saturation level of the full pixel, and in response to detecting that the intensity level of the full pixel of the optical sensor has reached the saturation level of the full pixel, computing an extrapolated intensity level of the full pixel based on the intensity level of the one or more sub-pixels.

公开(公告)号：US11736833B1

公开(公告)日：2023-08-22

申请号：US17849354

申请日：2022-06-24

申请人： OMNIVISION TECHNOLOGIES, INC.

发明人： Woon Il Choi

IPC分类号： H04N25/77 ,  H04N25/75 ,  H04N25/57 ,  H04N23/741

CPC分类号： H04N25/77 ,  H04N25/75 ,  H04N25/57

摘要： A pixel circuit includes a photodiode configured to photogenerate image charge in response to incident light. A transfer transistor is configured to transfer the image charge from the photodiode to a floating diffusion. A reset transistor coupled between a reset voltage source and the floating diffusion. A lateral overflow integration capacitor (LOFIC) includes an insulating region disposed between a first metal electrode and a second metal electrode. The first metal electrode is coupled to a bias voltage source, the second metal electrode is selectively coupled to the floating diffusion, and excess image charge photogenerated by the photodiode during an idle period is configured to overflow from the photodiode through the transfer transistor into the floating diffusion.

公开(公告)号：US20230262353A1

公开(公告)日：2023-08-17

申请号：US18309372

申请日：2023-04-28

申请人： CANON KABUSHIKI KAISHA

发明人： Daisuke Kobayashi

IPC分类号： H04N25/57 ,  G06N3/08 ,  H01L27/146 ,  G01C3/08 ,  H04N25/75 ,  H04N25/79 ,  H04N25/71 ,  H04N25/772 ,  H04N25/778

CPC分类号： H04N25/57 ,  G06N3/08 ,  H01L27/14634 ,  G01C3/08 ,  H04N25/75 ,  H04N25/79 ,  H04N25/745 ,  H04N25/772 ,  H04N25/778

摘要： A photoelectric conversion device according to one embodiment includes: a first substrate including a pixel that includes a photoelectric conversion element; and a second substrate including a first control unit that includes a first signal processing unit configured to process a signal from the pixel, the second substrate being stacked together with the first substrate. The signal from the pixel is output to a second signal processing unit disposed at a position different from a position of the first signal processing unit, a path through which the signal from the pixel is output to the first signal processing unit is different from a path through which the signal from the pixel is output to the second signal processing unit, and the first control unit is configured to control the pixel on the basis of the signal processed by the first signal processing unit.

公开(公告)号：US20230247316A1

公开(公告)日：2023-08-03

申请号：US18003417

申请日：2021-06-28

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： TERUKAZU TANAKA ,  ATSUMI NIWA

IPC分类号： H04N25/57 ,  H03G3/30 ,  H04N25/778 ,  H04N25/51

CPC分类号： H04N25/57 ,  H03G3/30 ,  H04N25/778 ,  H04N25/51 ,  H03G2201/103

摘要： A solid-state imaging device according to an embodiment includes: pixel circuits, each of the pixel circuits including: a generation unit (31) generating a voltage corresponding to a logarithmic value of a photocurrent; a capacitor (C1) having a first electrode to which the voltage generated by the generation unit is applied; a first amplifier (40a) having a first input terminal, which is connected to a second electrode of the capacitor, and a second input terminal, to which a first reference voltage (VbA0) is applied to, to output a comparison result obtained by comparing the voltage applied to the first input terminal with the voltage applied to the second input terminal; a switch unit (43) controlling a connection between the output of the first amplifier and the first input terminal; and a second amplifier (40b) having a third input terminal, to which the output of the first amplifier is connected, and a fourth input terminal, to which a second reference voltage (VbA1) is applied, to output a comparison result obtained by comparing the voltage applied to the third input terminal with the voltage applied to the fourth input terminal, in which a first gain of the first amplifier is lower than a second gain of the second amplifier.

公开(公告)号：US11696048B1

公开(公告)日：2023-07-04

申请号：US17709518

申请日：2022-03-31

申请人： ams Sensors USA Inc.

发明人： Muhammad Maksudur Rahman ,  Denver Lloyd ,  Scott Johnson ,  Adi Xhakoni

IPC分类号： H04N25/77 ,  H04N25/57 ,  H04N25/71 ,  H04N25/771 ,  H04N25/778 ,  H04N25/67

CPC分类号： H04N25/57 ,  H04N25/745 ,  H04N25/771 ,  H04N25/778 ,  H04N25/67

摘要： A pixel arrangement comprises a photodiode, a circuit node, a transfer transistor coupled to the photodiode and to the circuit node, an amplifier with an input coupled to the circuit node, a first and a second capacitor, a first transistor coupled to an output of the amplifier and to the first capacitor, a second transistor coupled to the first transistor and to the second capacitor, and a coupling transistor coupled to the circuit node and to the second capacitor.

公开(公告)号：US11659300B2

公开(公告)日：2023-05-23

申请号：US17680965

申请日：2022-02-25

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Hung Luong

IPC分类号： H01L27/14 ,  H04N25/75 ,  H01L27/146 ,  H04N25/57 ,  H04N25/77

CPC分类号： H04N25/75 ,  H01L27/14641 ,  H04N25/57 ,  H04N25/77

摘要： A solid-state image sensor includes a pixel array section including a plurality of unit pixels each having a photoelectric conversion unit, the plurality of unit pixels being arranged in a matrix, a constant current source circuit unit having a constant current source connected to each of vertical signal lines provided in association with column arrangement of the pixel array section; and a control unit configured to control the constant current source circuit unit. The constant current source includes a plurality of transistors. The control unit switches, in a case where the plurality of transistors constituting the constant current source is regarded as one transistor having a gate width and a gate length being equivalent to each other, a ratio between the gate width and the gate length of the plurality of transistors on the basis of illumination in image-capturing environment.

公开(公告)号：US11659288B2

公开(公告)日：2023-05-23

申请号：US17076908

申请日：2020-10-22

申请人： SunASIC Technologies, Inc.

发明人： Chi-Chou Lin ,  Zheng-Ping He

IPC分类号： H04N25/75 ,  G06V40/13 ,  H04N25/42 ,  H04N25/44 ,  H04N25/50 ,  H04N25/57 ,  H04N25/59 ,  H04N25/70 ,  H04N25/40 ,  H04N25/77 ,  H04N25/78 ,  H04N25/51 ,  G06V10/98

CPC分类号： H04N25/44 ,  G06V40/1306 ,  H04N25/40 ,  H04N25/42 ,  H04N25/50 ,  H04N25/51 ,  H04N25/57 ,  H04N25/59 ,  H04N25/70 ,  H04N25/75 ,  H04N25/77 ,  H04N25/78 ,  G06V10/993

摘要： An image sensing device that can adjust parameters of an image before sending it to a processor for reducing computing power and/or storage requirement is disclosed. The image sensing device includes an array of sensing pixels; an output amplifier; an analog-to-digital converter; a first set of registers and a second set of registers; an activation circuit; and a profiling logic. The profiling logic conducts statistical analysis on output data and adjusts parameters stored in the first set of registers until results of the statistical analysis reaches a target standard, wherein the adjusted parameters are used to generate an output image by each sensing pixel of the array of sensing pixels once the target standard is reached and a notification signal is sent to an external device for notifying the failure of parameter adjustment if the target standard fails to be reached within a predetermined times of adjustment.

公开(公告)号：US12132067B2

公开(公告)日：2024-10-29

申请号：US18157009

申请日：2023-01-19

申请人： ENKRIS SEMICONDUCTOR, INC.

发明人： Yuchao Chen ,  Kai Cheng

IPC分类号： H01L27/146 ,  H04N23/741 ,  H04N25/57

CPC分类号： H01L27/14647 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14638 ,  H04N23/741 ,  H04N25/57

摘要： Disclosed is an image sensor. The image sensor includes at least one photosensitive unit including at least two photosensitive layers stacked and not completely overlapped, a region where each photosensitive layer is not overlapped with other photosensitive layers being configured to arrange an electrode wire, and photosensitive component contents of the at least two photosensitive layers being different. According to the present disclosure, a wavelength range of sensible light of each photosensitive unit may be enlarged, so that more image details may be recorded, images with a high dynamic range may be generated, and people may experience a visual effect close to a real environment. In addition, as there is no need to reduce a photosensitive area of the photosensitive layer for arranging the electrode wires, the photosensitive area of the photosensitive layer is increased and thereby a dynamic range of the image sensor is improved.

公开(公告)号：US20240313012A1

公开(公告)日：2024-09-19

申请号：US18671434

申请日：2024-05-22

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： Sanshiro SHISHIDO ,  Masashi MURAKAMI ,  Kazuko NISHIMURA

IPC分类号： H01L27/146 ,  H04N23/50 ,  H04N23/55 ,  H04N25/57 ,  H04N25/585 ,  H04N25/75 ,  H04N25/76

CPC分类号： H01L27/14612 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/14643 ,  H04N25/57 ,  H04N25/585 ,  H04N25/75 ,  H04N25/76 ,  H04N23/50 ,  H04N23/55

摘要： An imaging device including a semiconductor substrate; a first photoelectric converter that is located in the semiconductor substrate and that generates a first signal charge by photoelectric conversion; a first node to which the first signal charge is input; a capacitor having a first terminal coupled to the first node; and a second photoelectric converter that is located in the semiconductor substrate and that generates a second signal charge by photoelectric conversion. The area of the second photoelectric converter is greater than the area of the first photoelectric converter in a plan view, and the number of saturation charges of a first imaging cell including the first photoelectric converter and the capacitor is greater than the number of saturation charges of a second imaging cell including the second photoelectric converter.

公开(公告)号：US20240267653A1

公开(公告)日：2024-08-08

申请号：US18638493

申请日：2024-04-17

申请人： Gigajot Technology, Inc.

发明人： Jiaju Ma ,  Saleh Masoodian

IPC分类号： H04N25/75 ,  H04N25/57

CPC分类号： H04N25/75 ,  H04N25/57

摘要： First and second readout circuits, each having a respective floating diffusion node, are coupled to a photodetection element within a pixel of an integrated-circuit image sensor. Following an exposure interval in which photocharge is accumulated within the photodetection element, a first portion of the accumulated photocharge is transferred from the photodetection element to the first floating diffusion node to enable generation of a first output signal within the first readout circuit, and a second portion of the accumulated photocharge is transferred from the photodetection element to the second floating diffusion node to enable generation of a second output signal within the second readout circuit. A digital pixel value is generated based on the first and second output signals.