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    METHOD FOR PRODUCING QUANTUM CASCADE LASER ELEMENT
    62.
    发明公开
    METHOD FOR PRODUCING QUANTUM CASCADE LASER ELEMENT 审中-公开

    公开(公告)号：US20230143711A1

    公开(公告)日：2023-05-11

    申请号：US17914836

    申请日：2021-03-25

    申请人： HAMAMATSU PHOTONICS K.K.

    发明人： Atsushi SUGIYAMA ,  Yuji KANEKO ,  Yasufumi TAKAGI

    IPC分类号： H01S5/34 ,  H01S5/227 ,  H01S5/0234

    CPC分类号： H01S5/3401 ,  H01S5/2275 ,  H01S5/0234

    摘要： A method for manufacturing a quantum cascade laser element includes: a step of forming a semiconductor layer on a first major surface of a semiconductor wafer; a step of removing a part of the semiconductor layer by etching such that each of portions of the semiconductor layer includes a ridge portion; a step of forming an insulating layer such that at least a part of a surface of the ridge portion is exposed; a step of embedding the ridge portion in each of metal plating layers; a step of flattening a surface of the metal plating layers by polishing in a state where a protective member is disposed; a step of forming an electrode layer on a second major surface of the semiconductor wafer; and a step of cleaving the semiconductor wafer and the semiconductor layer in a state where the protective member is removed.

    LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE
    63.
    发明申请
    LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE 有权

    公开(公告)号：US20220416509A1

    公开(公告)日：2022-12-29

    申请号：US17778137

    申请日：2020-12-10

    申请人： Sony Semiconductor Solutions Corporation

    发明人： Takahiro ARAKIDA

    IPC分类号： H01S5/223 ,  H01S5/183 ,  H01S5/0234 ,  H01S5/42

    摘要： A light emitting device according to an embodiment of the present disclosure includes: a semi-insulating substrate; a semiconductor layer; a semiconductor stacked body; a buried layer; and a non-continuous lattice plane. The semi-insulating substrate has a first surface and a second surface that are opposed to each other. The semiconductor layer is stacked on the first surface of the semi-insulating substrate. The semiconductor layer has electrical conductivity. The semiconductor stacked body is stacked above the first surface of the semi-insulating substrate with the semiconductor layer interposed in between. The semiconductor stacked body has a light emitting region and includes a ridge section on the semi-insulating substrate side. The light emitting region is configured to emit laser light. The buried layer is provided around the ridge section of the semiconductor stacked body. The non-continuous lattice plane is provided between the semi-insulating substrate and the semiconductor stacked body.

    SILICON PHOTONICS LIGHT SOURCE
    64.
    发明申请
    SILICON PHOTONICS LIGHT SOURCE 有权

    公开(公告)号：US20220407285A1

    公开(公告)日：2022-12-22

    申请号：US17895440

    申请日：2022-08-25

    申请人： Marvell Asia Pte Ltd.

    发明人： Xiaoguang HE ,  Radhakrishnan L. Nagarajan

    IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/323 ,  H04B10/27 ,  H04B10/07 ,  G01R31/26 ,  G02B6/12 ,  H01S5/0234

    摘要： A photonics device includes a silicon wafer including a cathode region, an anode region, a trench region formed between the cathode region and the anode region, and a linear ridge formed between the cathode region and the anode region. A laser diode chip is mounted on the silicon wafer. A conductor layer disposed between the silicon wafer and the laser diode chip includes a first section disposed between the laser diode chip and the cathode region on a first side of the trench to electrically connect the laser diode chip to a cathode electrode of the photonics device and a second section disposed between the anode region and the laser diode chip on a second side of the trench to electrically connect the laser diode chip to an anode electrode of the photonics device.

    Chip on submount module
    65.
    发明授权
    Chip on submount module 有权

    公开(公告)号：US11431146B2

    公开(公告)日：2022-08-30

    申请号：US14920490

    申请日：2015-10-22

    申请人： Jabil Inc.

    发明人： Lorito E. Victoria ,  Lars Runge

    IPC分类号： H01S5/02315 ,  H01S5/023 ,  H01S5/02345 ,  H01S5/0233 ,  H01S5/0235 ,  H01S5/02355 ,  H01S5/14 ,  H01S5/024 ,  H01S5/02216 ,  H01S5/00 ,  H01S5/0231 ,  H01S5/0234 ,  H01S5/02253

    摘要： A chip on submodule includes a submount having a top surface, bottom surface and side surfaces. A positive electrode plate is affixed to a first portion of one side surface, the top surface and a first portion of the bottom surface. The positive electrode plated first portion of the one side surface and the top surface are interconnected. A connector electrically connects the positive electrode plated top surface to the first portion of the bottom surface. A negative electrode plate is affixed to a second portion of the one side surface and a second portion of the bottom surface. The negative electrode plated second portion of the one side surface and second portion of the bottom surface are interconnected. A laser diode is affixed to the positive electrode plated first portion of the one side surface and connected to the negative electrode plated second portion of the one side surface.

    ANGLED FLIP-CHIP BUMP LAYOUT
    67.
    发明申请
    ANGLED FLIP-CHIP BUMP LAYOUT 有权

    公开(公告)号：US20220200232A1

    公开(公告)日：2022-06-23

    申请号：US17192470

    申请日：2021-03-04

    申请人： Lumentum Operations LLC

    发明人： Albert YUEN ,  Mitchell SRIMONGKOL ,  Joseph LIN

    IPC分类号： H01S5/0234

    摘要： In some implementations, an optical device for mounting in a flip-chip configuration includes a plurality of flip-chip bumps that are arranged in a pattern on the optical device, wherein the pattern is not aligned with a crystal cleavage plane associated with a substrate of the optical device. In some implementations, the optical device further includes a gap that separates a primary region of the optical device and a secondary region of the optical device, wherein at least one portion of a side of the gap is oriented at a non-zero angle to the crystal cleavage plane.

    SEMICONDUCTOR LASER DIODE
    68.
    发明申请
    SEMICONDUCTOR LASER DIODE 有权

    公开(公告)号：US20220140566A1

    公开(公告)日：2022-05-05

    申请号：US17573701

    申请日：2022-01-12

    申请人： OSRAM OLED GmbH

    发明人： Wolfgang Reill

    IPC分类号： H01S5/0237 ,  H01S5/042 ,  H01S5/065 ,  H01S5/023 ,  H01S5/0233 ,  H01S5/0234 ,  H01S5/0235

    摘要： A semiconductor laser diode includes a semiconductor body having an emitter region; and a first connection element that electrically contacts the semiconductor body in the emitter region, wherein the semiconductor body is in contact with the first connection element in the emitter region, at least in places in the emitter region, the semiconductor body has a structuring that enlarges a contact area between the semiconductor body and the first connection element, the semiconductor body includes a connection region that directly adjoins the first connection element at the contact area, and the connection region is a highly p-doped layer.