公开(公告)号：US20050026393A1

公开(公告)日：2005-02-03

申请号：US10861464

申请日：2004-06-07

Applicant: Yutaka Hirose ,  Tsuyoshi Tanaka ,  Daisuke Ueda

Inventor： Yutaka Hirose ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC: H01L21/30 ,  H01L21/306 ,  H01L21/46 ,  H01L21/78

CPC classification number: H01L21/30612 ,  H01L21/78

Abstract: A semiconductor layer formed on one surface of a substrate is irradiated with light from the other surface of the substrate to thermally decompose part of a region of the semiconductor layer in contact with the substrate, thereby forming a thermally decomposed layer. Thereafter, the thermally decomposed layer is removed with the substrate kept bonded with the semiconductor layer.

Abstract translation: 在基板的一个表面上形成的半导体层被照射来自基板的另一个表面的光，以热分解半导体层与基板接触的区域的一部分，从而形成热分解层。 之后，用与半导体层保持接合的基板去除热分解层。

公开(公告)号：US06589857B2

公开(公告)日：2003-07-08

申请号：US10100118

申请日：2002-03-19

Applicant: Masahiro Ogawa ,  Daisuke Ueda ,  Masahiro Ishida

Inventor： Masahiro Ogawa ,  Daisuke Ueda ,  Masahiro Ishida

IPC: H01L2120

CPC classification number: C30B33/00 ,  C30B29/403 ,  C30B29/406 ,  C30B29/60 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/0079 ,  H01S5/32341 ,  H01S2304/12

Abstract: A first semiconductor film made of a nitride semiconductor is grown through epitaxial growth on a light transmitting substrate. A thermal decomposition layer is disposed in a space between the substrate and the first semiconductor film by irradiating laser light to the first semiconductor film from the back surface of the substrate. After a second semiconductor film made of a nitride semiconductor is grown through epitaxial growth while the first semiconductor film is placed on the substrate, the temperature of the substrate is lowered to room temperature. Then, by separating and removing the substrate from the first and second semiconductor films, it is possible to obtain a nitride semiconductor substrate having an area substantially as large as the area of the substrate.

公开(公告)号：US06562701B2

公开(公告)日：2003-05-13

申请号：US10062512

申请日：2002-02-05

Applicant: Masahiro Ishida ,  Daisuke Ueda ,  Masaaki Yuri

Inventor： Masahiro Ishida ,  Daisuke Ueda ,  Masaaki Yuri

IPC: H01L21302

CPC classification number: C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/0079

Abstract: A mask film of a material on which substantially no nitride semiconductor grows and having a plurality of openings in a stripe shape is formed on a main surface of a base substrate. Then, on the base substrate, a semiconductor layer of nitride is selectively grown through the mask film. Then, a laser beam is irradiated upon the interface between the semiconductor layer and the base substrate to separate the semiconductor layer from the base substrate, so that a nitride semiconductor substrate is formed from the semiconductor layer.

公开(公告)号：US06548838B1

公开(公告)日：2003-04-15

申请号：US09666157

申请日：2000-09-19

Applicant: Yoshiharu Anda ,  Mitsuru Nishitsuji ,  Tsuyoshi Tanaka ,  Daisuke Ueda

Inventor： Yoshiharu Anda ,  Mitsuru Nishitsuji ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC: H01L310328

CPC classification number: H01L29/66462 ,  H01L29/41725 ,  H01L29/7784

Abstract: A field-effect transistor of the present invention has first semiconductor layers disposed in at least two regions located above a substrate and spaced apart in a direction parallel to a substrate surface, second semiconductor layers disposed on the respective first semiconductor layers to protrude from the respective side surfaces of the first semiconductor layers, and ohmic electrodes disposed on the respective second semiconductor layers. The field-effect transistor also has a gate electrode formed by self alignment relative to the ohmic electrodes, which is disposed in a region located above the substrate and lying between the first semiconductor layers in spaced relation to the respective side surfaces of the first semiconductor layers.

Abstract translation: 本发明的场效应晶体管具有位于基板上方的至少两个区域中的第一半导体层，并且在平行于衬底表面的方向上间隔开，第二半导体层设置在相应的第一半导体层上以从相应的 第一半导体层的侧表面和设置在相应的第二半导体层上的欧姆电极。 场效应晶体管还具有通过相对于欧姆电极进行自对准而形成的栅电极，该欧姆电极设置在位于衬底上方的区域中，并且位于第一半导体层之间，与第一半导体层的相应侧表面间隔开 。

公开(公告)号：US06329262B1

公开(公告)日：2001-12-11

申请号：US09256738

申请日：1999-02-24

Applicant: Takeshi Fukuda ,  Hiroshi Takenaka ,  Hidetoshi Furukawa ,  Takeshi Fukui ,  Daisuke Ueda

Inventor： Takeshi Fukuda ,  Hiroshi Takenaka ,  Hidetoshi Furukawa ,  Takeshi Fukui ,  Daisuke Ueda

IPC: H01L2162

CPC classification number: H01L27/0658 ,  H01L27/0802

Abstract: A semiconductor integrated circuit includes a thermal resistor which is made of a tungsten silicon nitride containing at least about 5% by weight of silicon and formed on a semiconductor substrate directly or via an insulating film. The semiconductor integrated circuit is produced by a method including the steps of: forming a tungsten silicide nitride film on a semiconductor substrate; patterning the tungsten silicide nitride film in a predetermined pattern to form a thermal resistor; and forming a pair of electrodes to be connected to the thermal resistor. The semiconductor integrated circuit is provided so as to have a predetermined resistance by measuring electric characteristics of the semiconductor integrated circuit; obtaining a difference between the measured electric characteristics and desired electric characteristics to calculate a required adjusting amount of a resistance of the thermal resistor; and adjusting the resistance of the thermal resistor by the adjusting amount through heating of the thermal resistor with electric power.

Abstract translation: 半导体集成电路包括由包含至少约5重量％的硅的钨硅氮化物制成的热电阻器，并且直接或经由绝缘膜形成在半导体衬底上。 半导体集成电路通过包括以下步骤的方法制造：在半导体衬底上形成硅化钨化硅膜; 以预定图案图案化硅化钨氮化膜以形成热电阻; 并形成一对要连接到热电阻器的电极。 半导体集成电路通过测量半导体集成电路的电特性而具有预定的电阻; 获得所测量的电特性和所需电特性之间的差以计算热敏电阻的电阻的所需调整量; 并且通过用电力加热热敏电阻器来调整热敏电阻的电阻达到调节量。

公开(公告)号：US6148172A

公开(公告)日：2000-11-14

申请号：US406378

申请日：1999-09-27

Applicant: Takanori Kanda ,  Akira Kosugi ,  Keisuke Tanaka ,  Daisuke Ueda ,  Akitoshi Matsubara ,  Minoru Asakawa ,  Jun Yokobori ,  Chikatsu Suzuki ,  Takaaki Sakai ,  Junji Sato ,  Yoshinao Kitahara

Inventor： Takanori Kanda ,  Akira Kosugi ,  Keisuke Tanaka ,  Daisuke Ueda ,  Akitoshi Matsubara ,  Minoru Asakawa ,  Jun Yokobori ,  Chikatsu Suzuki ,  Takaaki Sakai ,  Junji Sato ,  Yoshinao Kitahara

IPC: B65H3/44 ,  B65H5/34 ,  B65H9/10 ,  G03G15/00

CPC classification number: B65H9/006 ,  B65H3/44 ,  B65H5/34 ,  B65H9/106 ,  G03G15/6529 ,  G03G15/6564 ,  G03G15/6567 ,  B65H2404/7231 ,  B65H2511/22 ,  G03G2215/00447 ,  G03G2215/00556

Abstract: An image forming apparatus is provided with a plurality of storing units for storing respective recording materials of various sizes; a plurality of feeding members for feeding out the recording materials from each of the storing units; a conveyance path along which the recording materials being fed out by each of the feeding members are conveyed; a plurality of conveying members for conveying the recording materials along the conveyance path; an image forming section for forming an image on the recording materials conveyed along the conveyance path; and a plurality of first regulators provided at respective predetermined positions with respect to corresponding ones of each of the storing units for regulating at least a maximum size of the various sizes of the recording materials while at least at a part of each of the recording materials is fed out from the respective corresponding storing units.

Abstract translation: 图像形成装置设置有用于存储各种尺寸的各种记录材料的多个存储单元; 多个进给构件，用于从每个存储单元输出记录材料; 传送通过每个馈送部件馈送的记录材料的传送路径; 多个传送构件，用于沿着传送路径传送记录材料; 图像形成部，用于在沿着传送路径传送的记录材料上形成图像; 以及多个第一调节器，其相对于每个存储单元中的相应的预定位置设置，用于至少在每个记录材料的一部分处调节记录材料的各种尺寸的至少最大尺寸， 从相应的相应的存储单元馈送。

公开(公告)号：US5903178A

公开(公告)日：1999-05-11

申请号：US948033

申请日：1997-10-09

Applicant: Kazuo Miyatsuji ,  Daisuke Ueda

Inventor： Kazuo Miyatsuji ,  Daisuke Ueda

IPC: H03F3/193 ,  H03K17/00 ,  H03K17/693 ,  H01P1/22

CPC classification number: H03F3/1935 ,  H03K17/693 ,  H03F2200/366 ,  H03F2200/372 ,  H03F2200/72 ,  H03K2217/0036

Abstract: A drain and a source of a field-effect transistor are connected to first and second signal terminals, respectively. A first control terminal is connected to a gate. A first resistor is interposed between the gate and the first control terminal. Capacitors are interposed between the source/drain and the first and second signal terminals, respectively. A control terminal is connected to at least one of the source/drain via a second resistor. High frequency signals supplied through the first signal terminal is sent through the field-effect transistor and outputted through the second signal terminal, and a quantity of the transmitted high frequency signals is controlled by a control voltage signal applied across the first and second control terminals. This structure provides a high frequency semiconductor integrated circuits which reduces a power consumption and an occupied area, increases a switchable power, suppresses output distortion, and simplifies a peripheral circuit.

Abstract translation: 场效应晶体管的漏极和源极分别连接到第一和第二信号端子。 第一控制端子连接到门。 第一电阻器插在栅极和第一控制端子之间。 电容器分别介于源极/漏极与第一和第二信号端子之间。 控制端子经由第二电阻器连接到源极/漏极中的至少一个。 通过第一信号端子提供的高频信号通过场效应晶体管发送并通过第二信号端子输出，并且通过施加在第一和第二控制端子上的控制电压信号来控制发送的高频信号的数量。 该结构提供了降低功耗和占用面积的高频半导体集成电路，增加可切换功率，抑制输出失真，并且简化了外围电路。

公开(公告)号：US5536971A

公开(公告)日：1996-07-16

申请号：US144285

申请日：1993-10-27

Applicant: Yoshiro Oishi ,  Daisuke Ueda

Inventor： Yoshiro Oishi ,  Daisuke Ueda

IPC: H01L21/338 ,  H01L23/482 ,  H01L23/522 ,  H01L29/06 ,  H01L29/417 ,  H01L29/812 ,  H01L29/80 ,  H01L23/02 ,  H01L29/76 ,  H01L31/112

CPC classification number: H01L29/8128 ,  H01L23/4821 ,  H01L23/5222 ,  H01L29/0653 ,  H01L29/41775 ,  H01L2924/0002 ,  Y10S438/958

Abstract: A semiconductor device operating at a high frequency, includes: a semiconductor layer; a first electrode for being applied with a voltage to control a current flowing in the semiconductor layer; a second electrode and a third electrode electrically connected to the semiconductor layer, at least one of the second and third electrodes being elongated above the first electrode to form a hollow around the first electrode by surrounding the first electrode with the second and third electrodes and the semiconductor layer; a passivation film formed over the second and third electrodes; and wherein the first electrode is directly in contact with an atmosphere in the hollow.

Abstract translation: 以高频工作的半导体器件包括：半导体层; 用于施加电压以控制在半导体层中流动的电流的第一电极; 与所述半导体层电连接的第二电极和第三电极，所述第二电极和所述第三电极中的至少一个在所述第一电极之上延伸，以通过用所述第二电极和所述第三电极围绕所述第一电极而在所述第一电极周围形成中空， 半导体层; 形成在第二和第三电极上的钝化膜; 并且其中所述第一电极直接与所述中空件中的气氛接触。

公开(公告)号：US20140283723A1

公开(公告)日：2014-09-25

申请号：US14185492

申请日：2014-02-20

Applicant: Daisuke UEDA ,  Hiroshi YAMASAKI ,  Toshiyuki MAMIYA ,  Mitsuhiro IIDA ,  Kazusa KONDO

Inventor： Daisuke UEDA ,  Hiroshi YAMASAKI ,  Toshiyuki MAMIYA ,  Mitsuhiro IIDA ,  Kazusa KONDO

IPC: D05B3/02 ,  D05B55/14

CPC classification number: D05B3/02 ,  D05B55/14

Abstract: A sewing machine includes a needle bar, a needle bar up-and-down movement mechanism, a swinging mechanism, a lower shaft, an outer shuttle, a thread cutting mechanism, a rotation speed adjustment mechanism, and an actuator. The needle bar up-and-down movement mechanism is configured to move the needle bar up and down.The swinging mechanism is configured to swing the needle bar in a left-right direction. The lower shaft is configured to rotate in synchronization with up-down movement of the needle bar. The outer shuttle is configured to rotate along with rotation of the lower shaft. The thread cutting mechanism is configured to cut at least an upper thread. The rotation speed adjustment mechanism is configured to adjust a rotation speed of the outer shuttle. The actuator is a driving source of the thread cutting mechanism and the rotation speed adjustment mechanism.

Abstract translation: 缝纫机包括针杆，针杆上下运动机构，摆动机构，下轴，外梭，切线机构，转速调节机构和致动器。 针杆上下移动机构配置为上下移动针杆。 摆动机构构造成使针杆向左右方向摆动。 下轴构造成与针杆的上下移动同步地旋转。 外梭被构造成随着下轴的旋转而旋转。 螺纹切割机构构造成至少切割面线。 旋转速度调节机构构成为调整外梭的转速。 致动器是切线机构和转速调节机构的驱动源。

公开(公告)号：US08800988B2

公开(公告)日：2014-08-12

申请号：US13094245

申请日：2011-04-26

Applicant: Tomoo Suzuki ,  Akira Kosugi ,  Daisuke Ueda

Inventor： Tomoo Suzuki ,  Akira Kosugi ,  Daisuke Ueda

IPC: B65H7/02

CPC classification number: B65H3/128 ,  B65H9/002 ,  B65H9/006 ,  B65H2301/331 ,  B65H2404/2693 ,  B65H2511/216 ,  B65H2511/242 ,  B65H2801/06 ,  B65H2220/02 ,  B65H2220/11 ,  B65H2220/01

Abstract: A sheet feeding apparatus which includes a sheet loading tray for stacking sheets; a suction and conveyance section which is placed above stacked sheets on the sheet loading tray and sucks and conveys a sheet in the sheet conveying direction; an air blowing section which blows air at the stacked sheets on the sheet loading tray and causes the sheet to float up; and a skew correction section which corrects a skew of the sheet conveyed by the suction and conveyance section.

Abstract translation: 一种送纸装置，包括用于堆叠纸张的纸张装载托盘; 吸入输送部，其被放置在纸张装载盘上的堆叠纸张之上，并在纸张输送方向上吸引和输送纸张; 空气吹送部，其将堆叠的片材上的空气吹送在片材装载盘上，并使片材浮起; 以及歪斜校正部，其校正由吸引传送部输送的片材的歪斜。