公开(公告)号：US06562701B2

公开(公告)日：2003-05-13

申请号：US10062512

申请日：2002-02-05

申请人： Masahiro Ishida ,  Daisuke Ueda ,  Masaaki Yuri

发明人： Masahiro Ishida ,  Daisuke Ueda ,  Masaaki Yuri

IPC分类号： H01L21302

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/0079

摘要： A mask film of a material on which substantially no nitride semiconductor grows and having a plurality of openings in a stripe shape is formed on a main surface of a base substrate. Then, on the base substrate, a semiconductor layer of nitride is selectively grown through the mask film. Then, a laser beam is irradiated upon the interface between the semiconductor layer and the base substrate to separate the semiconductor layer from the base substrate, so that a nitride semiconductor substrate is formed from the semiconductor layer.

公开(公告)号：US06750158B2

公开(公告)日：2004-06-15

申请号：US10145144

申请日：2002-05-15

申请人： Masahiro Ogawa ,  Daisuke Ueda ,  Masahiro Ishida ,  Masaaki Yuri ,  Hirokazu Shimizu

发明人： Masahiro Ogawa ,  Daisuke Ueda ,  Masahiro Ishida ,  Masaaki Yuri ,  Hirokazu Shimizu

IPC分类号： H01L2126

CPC分类号： H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0066 ,  H01L33/0079 ,  H01L33/0095 ,  Y10S438/977

摘要： A first semiconductor layer is formed on a mother substrate, and the mother substrate is irradiated with irradiation light from a surface opposite to the first semiconductor layer, so that a thermally decomposed layer formed by thermally decomposing the first semiconductor layer between the first semiconductor layer and the mother substrate. Then, a second semiconductor layer including an active layer is formed on the first semiconductor layer in which the thermally decomposed layer is formed.

摘要翻译： 在母基板上形成第一半导体层，用与第一半导体层相反的面的照射光照射母基板，通过在第一半导体层和第一半导体层之间热分解第一半导体层而形成的热分解层 母基板。 然后，在形成热分解层的第一半导体层上形成包括有源层的第二半导体层。

公开(公告)号：US06593159B1

公开(公告)日：2003-07-15

申请号：US09532063

申请日：2000-03-21

申请人： Tadao Hashimoto ,  Osamu Imafuji ,  Masaaki Yuri ,  Masahiro Ishida

发明人： Tadao Hashimoto ,  Osamu Imafuji ,  Masaaki Yuri ,  Masahiro Ishida

IPC分类号： H01L2100

CPC分类号： H01L33/007 ,  B82Y20/00 ,  C30B25/18 ,  H01S5/0207 ,  H01S5/021 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/34333 ,  H01S2301/173

摘要： A sapphire substrate, a buffer layer of undoped GaN and a compound semiconductor crystal layer successively formed on the sapphire substrate together form a substrate of a light emitting diode. A first cladding layer of n-type GaN, an active layer of undoped In0.2Ga0.8N and a second cladding layer successively formed on the compound semiconductor crystal layer together form a device structure of the light emitting diode. On the second cladding layer, a p-type electrode is formed, and on the first cladding layer, an n-type electrode is formed. In a part of the sapphire substrate opposing the p-type electrode, a recess having a trapezoidal section is formed, so that the thickness of an upper portion of the sapphire substrate above the recess can be substantially equal to or smaller than the thickness of the compound semiconductor crystal layer.

摘要翻译： 蓝宝石衬底，未掺杂GaN的缓冲层和连续形成在蓝宝石衬底上的化合物半导体晶体层一起形成发光二极管的衬底。 n型GaN的第一包层，未掺杂的In 0.2 Ga 0.8 N的有源层和连续形成在化合物半导体晶体层上的第二覆层一起形成发光二极管的器件结构。 在第二包层上形成p型电极，在第一包层上形成n型电极。 在与p型电极相对的蓝宝石衬底的一部分中，形成具有梯形截面的凹部，使得凹部上方的蓝宝石衬底的上部的厚度可以基本上等于或小于 化合物半导体晶体层。

公开(公告)号：US06566231B2

公开(公告)日：2003-05-20

申请号：US09790908

申请日：2001-02-23

申请人： Masahiro Ogawa ,  Kenji Orita ,  Masahiro Ishida ,  Shinji Nakamura ,  Osamu Imafuji ,  Masaaki Yuri

发明人： Masahiro Ogawa ,  Kenji Orita ,  Masahiro Ishida ,  Shinji Nakamura ,  Osamu Imafuji ,  Masaaki Yuri

IPC分类号： H01L2176

CPC分类号： H01L33/007 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02642 ,  H01L21/02647

摘要： A first semiconductor layer is epitaxially grown on a semiconductor substrate and patterned to form concave and convex portions. A second semiconductor layer is formed on the first semiconductor layer using a top epitaxial mask covering the top surface of the convex portion. Lattice defects D propagating from the first semiconductor layer exist only in a region located above the center of the concave portion (a defect region Ra), while in the other region (a low defect region Rb) lattice defects D propagating from the first semiconductor layer hardly exist.

摘要翻译： 第一半导体层在半导体衬底上外延生长并图案化以形成凹凸部分。 使用覆盖凸部的顶面的顶部外延掩模，在第一半导体层上形成第二半导体层。 从第一半导体层传播的晶格缺陷D仅存在于位于凹部的中心以上的区域（缺陷区域Ra），而在另一区域（低缺陷区域Rb）中，从第一半导体层传播的缺陷D 几乎不存在

公开(公告)号：US06563140B1

公开(公告)日：2003-05-13

申请号：US09392376

申请日：1999-09-09

申请人： Shinji Nakamura ,  Masahiro Ishida ,  Masaaki Yuri ,  Osamu Imafuji ,  Kenji Orita

发明人： Shinji Nakamura ,  Masahiro Ishida ,  Masaaki Yuri ,  Osamu Imafuji ,  Kenji Orita

IPC分类号： H01L3300

CPC分类号： H01S5/2231 ,  H01S5/32341 ,  Y10S438/956

摘要： A semiconductor light emitting device of the present invention includes: a substrate; a light emitting layer; a semiconductor layer of a hexagonal first III-group nitride crystal; and a cladding layer of a second III-group nitride crystal. A stripe groove is provided in the semiconductor layer along a direction.

公开(公告)号：US06905898B2

公开(公告)日：2005-06-14

申请号：US10413995

申请日：2003-04-16

申请人： Masahiro Ishida ,  Masahiro Ogawa ,  Masaya Mannoh ,  Masaaki Yuri

发明人： Masahiro Ishida ,  Masahiro Ogawa ,  Masaya Mannoh ,  Masaaki Yuri

IPC分类号： H01L21/027 ,  G03F7/09 ,  H01L33/00 ,  H01L33/20 ,  H01L33/22 ,  H01L21/00

CPC分类号： H01L21/02389 ,  G03F7/091 ,  H01L21/0242 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/005 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01S5/0207 ,  H01S5/22 ,  H01S5/2219 ,  H01S5/32341

摘要： A semiconductor substrate comprises a semiconductor layer comprising a group III nitride as a main component. A scattering portion for scattering an incident beam of light incident on one plane of the semiconductor layer is provided on another plane or inside of the semiconductor layer.

摘要翻译： 半导体衬底包括以III族氮化物为主要成分的半导体层。 在半导体层的另一平面或内部设置用于散射入射在半导体层的一个平面上的入射光束的散射部分。

公开(公告)号：US06821805B1

公开(公告)日：2004-11-23

申请号：US09680054

申请日：2000-10-05

申请人： Shinji Nakamura ,  Masahiro Ishida ,  Kenji Orita ,  Osamu Imafuji ,  Masaaki Yuri

发明人： Shinji Nakamura ,  Masahiro Ishida ,  Kenji Orita ,  Osamu Imafuji ,  Masaaki Yuri

IPC分类号： H01L2100

CPC分类号： C30B25/183 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02516 ,  H01L21/0254 ,  H01L33/025 ,  H01L33/20 ,  H01L33/32 ,  H01S5/0207 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3203 ,  H01S5/32341

摘要： Disclosed is a semiconductor device which comprises a substrate in which surface is formed a depression having a closed figure when viewed from the substrate normal and a semiconductor layer which is formed on the surface of the substrate by crystal growth from at least an inside face of the depression.

摘要翻译： 公开了一种半导体器件，其包括基板，其中从基板法线观察时，表面形成有具有闭合图形的凹陷;以及半导体层，其通过晶体生长从基板法线的至少内表面形成在基板的表面上 萧条。

公开(公告)号：US6069394A

公开(公告)日：2000-05-30

申请号：US56500

申请日：1998-04-08

申请人： Tadao Hashimoto ,  Osamu Imafuji ,  Masaaki Yuri ,  Masahiro Ishida

发明人： Tadao Hashimoto ,  Osamu Imafuji ,  Masaaki Yuri ,  Masahiro Ishida

IPC分类号： C30B25/18 ,  H01L33/00 ,  H01S5/02 ,  H01S5/323 ,  H01L31/00 ,  H01L29/06 ,  H01L31/06 ,  H01L31/12

CPC分类号： H01L33/007 ,  B82Y20/00 ,  C30B25/18 ,  H01S2301/173 ,  H01S5/0207 ,  H01S5/021 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/34333

摘要： A sapphire substrate, a buffer layer of undoped GaN and a compound semiconductor crystal layer successively formed on the sapphire substrate together form a substrate of a light emitting diode. A first cladding layer of n-type GaN, an active layer of undoped In.sub.0.2 Ga.sub.0.8 N and a second cladding layer successively formed on the compound semiconductor crystal layer together form a device structure of the light emitting diode. On the second cladding layer, a p-type electrode is formed, and on the first cladding layer, an n-type electrode is formed. In a part of the sapphire substrate opposing the p-type electrode, a recess having a trapezoidal section is formed, so that the thickness of an upper portion of the sapphire substrate above the recess can be substantially equal to or smaller than the thickness of the compound semiconductor crystal layer.

公开(公告)号：US07345311B2

公开(公告)日：2008-03-18

申请号：US11092804

申请日：2005-03-30

申请人： Masahiro Ishida ,  Masahiro Ogawa ,  Masaya Mannoh ,  Masaaki Yuri

发明人： Masahiro Ishida ,  Masahiro Ogawa ,  Masaya Mannoh ,  Masaaki Yuri

IPC分类号： H01L27/15

CPC分类号： H01L21/02389 ,  G03F7/091 ,  H01L21/0242 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/005 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01S5/0207 ,  H01S5/22 ,  H01S5/2219 ,  H01S5/32341

摘要： A semiconductor substrate comprises a semiconductor layer comprising a group III nitride as a main component. A scattering portion for scattering an incident beam of light incident on one plane of the semiconductor layer is provided on another plane or inside of the semiconductor layer.

摘要翻译： 半导体衬底包括以III族氮化物为主要成分的半导体层。 在半导体层的另一平面或内部设置用于散射入射在半导体层的一个平面上的入射光束的散射部分。

公开(公告)号：US06773948B2

公开(公告)日：2004-08-10

申请号：US10405791

申请日：2003-04-02

申请人： Shinji Nakamura ,  Masahiro Ishida ,  Masaaki Yuri ,  Osamu Imafuji ,  Kenji Orita

发明人： Shinji Nakamura ,  Masahiro Ishida ,  Masaaki Yuri ,  Osamu Imafuji ,  Kenji Orita

IPC分类号： H01L2100

CPC分类号： H01S5/2231 ,  H01S5/32341 ,  Y10S438/956

摘要： A semiconductor light emitting device of the present invention includes: a substrate; a light emitting layer; a semiconductor layer of a hexagonal first III-group nitride crystal; and a cladding layer of a second III-group nitride crystal. A stripe groove is provided in the semiconductor layer along a direction.

摘要翻译： 本发明的半导体发光器件包括：衬底; 发光层; 六方晶系的第一III族氮化物晶体的半导体层; 以及第二III族氮化物晶体的包覆层。 在半导体层中沿着<1,1，-2,0>方向设置条纹槽。