公开(公告)号：US06562701B2

公开(公告)日：2003-05-13

申请号：US10062512

申请日：2002-02-05

申请人： Masahiro Ishida ,  Daisuke Ueda ,  Masaaki Yuri

发明人： Masahiro Ishida ,  Daisuke Ueda ,  Masaaki Yuri

IPC分类号： H01L21302

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/0079

摘要： A mask film of a material on which substantially no nitride semiconductor grows and having a plurality of openings in a stripe shape is formed on a main surface of a base substrate. Then, on the base substrate, a semiconductor layer of nitride is selectively grown through the mask film. Then, a laser beam is irradiated upon the interface between the semiconductor layer and the base substrate to separate the semiconductor layer from the base substrate, so that a nitride semiconductor substrate is formed from the semiconductor layer.

公开(公告)号：US06750158B2

公开(公告)日：2004-06-15

申请号：US10145144

申请日：2002-05-15

申请人： Masahiro Ogawa ,  Daisuke Ueda ,  Masahiro Ishida ,  Masaaki Yuri ,  Hirokazu Shimizu

发明人： Masahiro Ogawa ,  Daisuke Ueda ,  Masahiro Ishida ,  Masaaki Yuri ,  Hirokazu Shimizu

IPC分类号： H01L2126

CPC分类号： H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0066 ,  H01L33/0079 ,  H01L33/0095 ,  Y10S438/977

摘要： A first semiconductor layer is formed on a mother substrate, and the mother substrate is irradiated with irradiation light from a surface opposite to the first semiconductor layer, so that a thermally decomposed layer formed by thermally decomposing the first semiconductor layer between the first semiconductor layer and the mother substrate. Then, a second semiconductor layer including an active layer is formed on the first semiconductor layer in which the thermally decomposed layer is formed.

摘要翻译： 在母基板上形成第一半导体层，用与第一半导体层相反的面的照射光照射母基板，通过在第一半导体层和第一半导体层之间热分解第一半导体层而形成的热分解层 母基板。 然后，在形成热分解层的第一半导体层上形成包括有源层的第二半导体层。

公开(公告)号：US07773646B2

公开(公告)日：2010-08-10

申请号：US12280603

申请日：2007-03-14

申请人： Daisuke Ueda ,  Masaaki Yuri ,  Katsumi Sugiura ,  Kenichi Matsuda

发明人： Daisuke Ueda ,  Masaaki Yuri ,  Katsumi Sugiura ,  Kenichi Matsuda

IPC分类号： H01S3/00

CPC分类号： H01S5/042

摘要： A semiconductor light source includes a light-emitting device 101 having a plurality of semiconductor layers made of nitride semiconductors, and a drive circuit 102 for driving the light-emitting device 101. The drive circuit 102 performs forward drive operation, in which a forward current is supplied to the light-emitting device to make the light-emitting device 101 emit light, and reverse drive operation, in which a reverse bias is applied to the light-emitting device. The magnitude of the reverse bias is limited by the value of a reverse current flowing through the light-emitting device.

摘要翻译： 半导体光源包括具有由氮化物半导体构成的多个半导体层的发光器件101和用于驱动发光器件101的驱动电路102.驱动电路102执行正向驱动操作，其中正向电流 被提供给发光装置以使发光装置101发光，并且对发光装置施加反向偏压的反向驱动操作。 反向偏压的大小受流过发光器件的反向电流的值的限制。

公开(公告)号：US07738525B2

公开(公告)日：2010-06-15

申请号：US12065991

申请日：2007-07-09

申请人： Daisuke Ueda ,  Masaaki Yuri ,  Yoshiaki Hasegawa ,  Kenichi Matsuda

发明人： Daisuke Ueda ,  Masaaki Yuri ,  Yoshiaki Hasegawa ,  Kenichi Matsuda

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/162 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/3404

摘要： A semiconductor laser (101) includes a first cladding layer (103), an active layer (105) and a second cladding layer (108). A window region (115) including fluorine, that is, an impurity element with higher electronegativity than nitrogen, is formed in the vicinity of a front end face (113) and a rear end face (114) of a laser resonator. The window region (115) is formed by exposing the front end face (113) and the rear end face (114) to carbon fluoride (CF4) plasma. The effective band gap of a portion of the active layer (105) disposed in the window region (115) is larger than the effective band gap of another portion of the active layer, and hence, it functions as an end face window structure for suppressing COD.

摘要翻译： 半导体激光器（101）包括第一包层（103），有源层（105）和第二覆层（108）。 在激光谐振器的前端面（113）和后端面（114）附近形成有包含氟（即，具有比氮更高的电负性的杂质元素）的窗口区域（115）。 窗口区域115通过将前端面113和后端面114暴露于氟化碳（CF4）等离子体而形成。 布置在窗口区域（115）中的有源层（105）的一部分的有效带隙大于有源层的另一部分的有效带隙，因此，其用作用于抑制 COD。

公开(公告)号：US07078737B2

公开(公告)日：2006-07-18

申请号：US10652999

申请日：2003-08-29

申请人： Masaaki Yuri ,  Daisuke Ueda

发明人： Masaaki Yuri ,  Daisuke Ueda

IPC分类号： H01L33/00

CPC分类号： H01L33/505 ,  H01L24/20 ,  H01L24/24 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/04105 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2924/01013 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01063 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： An InGaN-based light-emitting diode that emits light in blue, for example, is mounted on a support substrate as a semiconductor light-emitting element, and a transparent film is fixed to the support substrate so as to cover the semiconductor light-emitting element. An electrode pattern is formed on an upper surface of the transparent film, and the electrode pattern is electrically connected to terminal electrodes of the semiconductor light-emitting element through, for example, through-holes. The transparent film can contain a phosphor excited by light emitted from the semiconductor light-emitting element. It is not necessary to perform wire bonding for connecting the semiconductor light-emitting element to the electrode pattern and sealing with a sealant.

摘要翻译： 例如，发出蓝色光的InGaN系发光二极管作为半导体发光元件安装在支撑基板上，透明膜固定在支撑基板上，以覆盖半导体发光 元件。 在透明膜的上表面上形成电极图案，电极图案通过例如通孔与半导体发光元件的端子电极电连接。 透明膜可以包含由从半导体发光元件发出的光而激发的荧光体。 不需要进行用于将半导体发光元件连接到电极图案并用密封剂密封的引线接合。

公开(公告)号：US20090014752A1

公开(公告)日：2009-01-15

申请号：US12280603

申请日：2007-03-14

申请人： Daisuke Ueda ,  Masaaki Yuri ,  Katsumi Sugiura ,  Kenichi Matsuda

发明人： Daisuke Ueda ,  Masaaki Yuri ,  Katsumi Sugiura ,  Kenichi Matsuda

IPC分类号： H01L33/00

CPC分类号： H01S5/042

摘要： A semiconductor light source includes a light-emitting device 101 having a plurality of semiconductor layers made of nitride semiconductors, and a drive circuit 102 for driving the light-emitting device 101. The drive circuit 102 performs forward drive operation, in which a forward current is supplied to the light-emitting device to make the light-emitting device 101 emit light, and reverse drive operation, in which a reverse bias is applied to the light-emitting device. The magnitude of the reverse bias is limited by the value of a reverse current flowing through the light-emitting device.

摘要翻译： 半导体光源包括具有由氮化物半导体构成的多个半导体层的发光器件101和用于驱动发光器件101的驱动电路102.驱动电路102执行正向驱动操作，其中正向电流 被提供给发光装置以使发光装置101发光，并且对发光装置施加反向偏压的反向驱动操作。 反向偏压的大小受流过发光器件的反向电流的值的限制。

公开(公告)号：US20090135875A1

公开(公告)日：2009-05-28

申请号：US12065991

申请日：2007-07-09

申请人： Daisuke Ueda ,  Masaaki Yuri ,  Yoshiaki Hasegawa ,  Kenichi Matsuda

发明人： Daisuke Ueda ,  Masaaki Yuri ,  Yoshiaki Hasegawa ,  Kenichi Matsuda

IPC分类号： H01S5/20 ,  H01L21/02 ,  H01L31/14

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/162 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/3404

摘要： A semiconductor laser (101) includes a first cladding layer (103), an active layer (105) and a second cladding layer (108). A window region (115) including fluorine, that is, an impurity element with higher electronegativity than nitrogen, is formed in the vicinity of a front end face (113) and a rear end face (114) of a laser resonator. The window region (115) is formed by exposing the front end face (113) and the rear end face (114) to carbon fluoride (CF4) plasma. The effective band gap of a portion of the active layer (105) disposed in the window region (115) is larger than the effective band gap of another portion of the active layer, and hence, it functions as an end face window structure for suppressing COD.

摘要翻译： 半导体激光器（101）包括第一包层（103），有源层（105）和第二覆层（108）。 在激光谐振器的前端面（113）和后端面（114）附近形成有包含氟（即，具有比氮更高的电负性的杂质元素）的窗口区域（115）。 窗口区域115通过将前端面113和后端面114暴露于氟化碳（CF4）等离子体而形成。 布置在窗口区域（115）中的有源层（105）的一部分的有效带隙大于有源层的另一部分的有效带隙，因此，其用作用于抑制 COD。

公开(公告)号：US06589857B2

公开(公告)日：2003-07-08

申请号：US10100118

申请日：2002-03-19

申请人： Masahiro Ogawa ,  Daisuke Ueda ,  Masahiro Ishida

发明人： Masahiro Ogawa ,  Daisuke Ueda ,  Masahiro Ishida

IPC分类号： H01L2120

CPC分类号： C30B33/00 ,  C30B29/403 ,  C30B29/406 ,  C30B29/60 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/0079 ,  H01S5/32341 ,  H01S2304/12

摘要： A first semiconductor film made of a nitride semiconductor is grown through epitaxial growth on a light transmitting substrate. A thermal decomposition layer is disposed in a space between the substrate and the first semiconductor film by irradiating laser light to the first semiconductor film from the back surface of the substrate. After a second semiconductor film made of a nitride semiconductor is grown through epitaxial growth while the first semiconductor film is placed on the substrate, the temperature of the substrate is lowered to room temperature. Then, by separating and removing the substrate from the first and second semiconductor films, it is possible to obtain a nitride semiconductor substrate having an area substantially as large as the area of the substrate.

公开(公告)号：US08582277B2

公开(公告)日：2013-11-12

申请号：US13300952

申请日：2011-11-21

申请人： Hirobumi Tanaka ,  Makoto Endo ,  Satoko Ueda ,  Daisuke Ueda ,  Shogo Murosawa ,  Daisuke Yoshida ,  Kenta Ono ,  Minoru Ogasawara ,  Tatsuya Kikuchi

发明人： Hirobumi Tanaka ,  Makoto Endo ,  Satoko Ueda ,  Daisuke Ueda ,  Shogo Murosawa ,  Daisuke Yoshida ,  Kenta Ono ,  Minoru Ogasawara ,  Tatsuya Kikuchi

IPC分类号： H01G4/12 ,  C04B35/468

CPC分类号： H01G4/1227 ,  H01G4/1281 ,  H01G4/30

摘要： A multilayer ceramic electronic component comprising an element body in which a dielectric layer and an internal electrode layer are stacked. The dielectric layer is constituted from a dielectric ceramic composition including; a compound having a perovskite structure expressed by a formula of ABO3 (A is at least one selected from Ba, Ca, and Sr; B is at least one selected from Ti, Zr, and Hf); an oxide of Mg; an oxide of rare earth elements including Sc and Y; and an oxide including Si. The dielectric ceramic composition comprises a plurality of dielectric particles and a grain boundary present in between the dielectric particles. In the grain boundary, when content ratios of Mg and Si are set to D(Mg) and D(Si) respectively, D(Mg) is 0.2 to 1.8 wt % in terms of MgO, and D(Si) is 0.4 to 8.0 wt % in terms of SiO2.

摘要翻译： 一种多层陶瓷电子部件，其特征在于，具有层叠有电介质层和内部电极层的元件体。 电介质层由介电陶瓷组合物构成，包括： 具有由式ABO 3表示的钙钛矿结构的化合物（A是选自Ba，Ca和Sr中的至少一种; B是选自Ti，Zr和Hf中的至少一种）; Mg的氧化物; 包括Sc和Y的稀土元素的氧化物; 和包含Si的氧化物。 电介质陶瓷组合物包含存在于电介质颗粒之间的多个电介质颗粒和晶界。 在晶界中，当Mg和Si的含量比分别设定为D（Mg）和D（Si）时，D（Mg）以MgO计为0.2〜1.8重量％，D（Si）为0.4〜8.0 重量％。

公开(公告)号：US08307772B2

公开(公告)日：2012-11-13

申请号：US12656236

申请日：2010-01-21

申请人： Akifume Nakashima ,  Daisuke Ueda

发明人： Akifume Nakashima ,  Daisuke Ueda

IPC分类号： D05B23/00

CPC分类号： D05C7/00 ,  D05B29/06 ,  D05D2303/00

摘要： A sewing machine including a presser foot that presses a workpiece, a presser bar that has a lower end allowing detachable attachment of the presser foot; a presser bar vertically moving mechanism that moves the presser bar up and down; a presser bar driver that drives the presser bar vertically moving mechanism; a needle plate that has an upper surface for placing the workpiece; a projecting element that is detachably attached to the presser bar and that is driven up and down with the presser bar as the presser bar is driven up and down by the presser bar driver through the presser bar vertically moving mechanism to form embosses on the workpiece by downwardly pressing the workpiece; and a receiving section that is provided on the upper surface of the needle plate that opposes the projecting element to receive a tip of the projecting element.

摘要翻译： 一种缝纫机，包括按压工件的压脚，具有下端的压脚，允许压脚可拆卸地附接; 按压杆上下移动机构; 一个驱动压杆垂直移动机构的压脚驱动器; 具有用于放置所述工件的上表面的针板; 突出元件，其可拆卸地附接到压脚杆，并且当压杆作为压杆时上下驱动，压杆驱动器通过压杆垂直移动机构被上下驱动，以在工件上形成压花，以通过 向下按压工件; 以及接收部，其设置在与所述突出元件相对的所述针板的上表面上，以容纳所述突出元件的前端。