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公开(公告)号：US20140060627A1
公开(公告)日：2014-03-06
申请号：US13603389
申请日：2012-09-04
申请人： Wilfried E. Haensch , Bahman Hekmatshoartabari , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
发明人： Wilfried E. Haensch , Bahman Hekmatshoartabari , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
IPC分类号： H01L31/04
CPC分类号： H01L31/182 , H01L31/02167 , H01L31/022433 , H01L31/068 , H01L31/1824 , Y02E10/547
摘要： Photovoltaic structures are provided with field-effect inversion/accumulation layers as emitter layers induced by work-function differences between gate conductor layers and substrates thereof. Localized contact regions are in electrical communication with the gate conductors of such structures for repelling minority carriers. Such localized contact regions may include doped crystalline or polycrystalline silicon regions between the gate conductor and silicon absorption layers. Fabrication of the structures can be conducted without alignment between metal contacts and the localized contact regions or high temperature processing.
摘要翻译： 光伏结构设置有作为由栅极导体层和其基板之间的功函数差异引起的发射极层的场效应反演/累积层。 局部接触区域与这种结构的栅极导体电连通以排斥少数载流子。 这种局部接触区域可以包括在栅极导体和硅吸收层之间的掺杂晶体或多晶硅区域。 可以在金属触点与局部接触区域或高温处理之间进行结构的制造。
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公开(公告)号：US08658444B2
公开(公告)日：2014-02-25
申请号：US13472584
申请日：2012-05-16
申请人： Stephen W. Bedell , Bahman Hekmatshoartabari , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
发明人： Stephen W. Bedell , Bahman Hekmatshoartabari , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
IPC分类号： H01L21/00
CPC分类号： H01L27/1218 , H01L21/304 , H01L21/6835 , H01L21/84 , H01L27/1203 , H01L27/1266 , H01L2221/68368
摘要： A high resolution active matrix backplane is fabricated using techniques applicable to flexible substrates. A backplane layer including active semiconductor devices is formed on a semiconductor-on-insulator substrate. The backplane layer is spalled from the substrate. A frontplane layer including passive devices such as LCDs, OLEDs, photosensitive materials, or piezo-electric materials is formed over the backplane layer to form an active matrix structure. The active matrix structure may be fabricated to allow bottom emission and provide mechanical flexibility.
摘要翻译： 使用适用于柔性基板的技术制造高分辨率有源矩阵背板。 包含有源半导体器件的背板层形成在绝缘体上半导体衬底上。 背板层从基板剥离。 包括诸如LCD，OLED，感光材料或压电材料的无源器件的前端层形成在背板层上以形成有源矩阵结构。 可以制造有源矩阵结构以允许底部发射并提供机械灵活性。
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公开(公告)号：US08642431B2
公开(公告)日：2014-02-04
申请号：US13437036
申请日：2012-04-02
IPC分类号： H01L21/336
CPC分类号： H01L21/26513 , H01L29/165 , H01L29/167 , H01L29/66636 , Y10S438/919
摘要： A field effect transistor (FET) has a channel hosted in Ge. The FET has silicon-germanium (SiGe) source and drain formed by selective epitaxy. The SiGe source and drain exert a tensile stress onto the Ge channel. During forming of the SiGe source and drain, an n-type dopant species and a compensating species are being incorporated into the SiGe source and drain. The n-type dopant species and the compensating species are so selected that the size of the SiGe atomic radius is inbetween the dopant atomic radius and the compensating species atomic radius.
摘要翻译： 场效应晶体管（FET）具有在Ge中托管的通道。 FET通过选择性外延形成硅 - 锗（SiGe）源极和漏极。 SiGe源极和漏极在Ge沟道上施加拉伸应力。 在形成SiGe源极和漏极期间，n型掺杂物质和补偿物质被并入到SiGe源极和漏极中。 选择n型掺杂物种类和补偿种类，使得SiGe原子半径的尺寸在掺杂剂原子半径和补偿物质原子半径之间。
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公开(公告)号：US08628999B2
公开(公告)日：2014-01-14
申请号：US13406838
申请日：2012-02-28
申请人： Augustin J. Hong , Marinus J. Hopstaken , Chien-Chih Huang , Yu-Wei Huang , Jeehwan Kim , Devendra K. Sadana , Chih-Fu Tseng
发明人： Augustin J. Hong , Marinus J. Hopstaken , Chien-Chih Huang , Yu-Wei Huang , Jeehwan Kim , Devendra K. Sadana , Chih-Fu Tseng
IPC分类号： H01L31/00
CPC分类号： H01L31/075 , H01L31/1816 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： Methods for forming a photovoltaic device include depositing a p-type layer on a substrate and cleaning the p-type layer by exposing a surface of the p-type layer to a plasma treatment to react with contaminants. An intrinsic layer is formed on the p-type layer, and an n-type layer is formed on the intrinsic layer.
摘要翻译： 用于形成光伏器件的方法包括在衬底上沉积p型层并通过将p型层的表面暴露于等离子体处理以与污染物反应来清洁p型层。 在p型层上形成本征层，在本征层上形成n型层。
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75.发明授权Uniformly distributed self-assembled cone-shaped pillars for high efficiency solar cells 有权用于高效太阳能电池的均匀分布的自组装锥形柱公开(公告)号：US08628996B2
公开(公告)日：2014-01-14
申请号：US13161163
申请日：2011-06-15
申请人： Christos Dimitrakopoulos , Augustin J. Hong , Jeehwan Kim , Devendra K. Sadana , Kuen-Ting Shiu
发明人： Christos Dimitrakopoulos , Augustin J. Hong , Jeehwan Kim , Devendra K. Sadana , Kuen-Ting Shiu
IPC分类号： H01L31/0232
CPC分类号： G06F3/061 , G06F3/064 , G06F3/0647 , G06F3/0653 , G06F3/0689 , G06F11/0727 , G06F11/1076 , G06F12/02 , H01L31/02366 , H04L67/1002 , H04W8/04 , H04W8/065 , Y02E10/50
摘要： A method for fabricating a photovoltaic device includes applying a diblock copolymer layer on a substrate and removing a first polymer material from the diblock copolymer layer to form a plurality of distributed pores. A pattern forming layer is deposited on a remaining surface of the diblock copolymer layer and in the pores in contact with the substrate. The diblock copolymer layer is lifted off and portions of the pattern forming layer are left in contact with the substrate. The substrate is etched using the pattern forming layer to protect portions of the substrate to form pillars in the substrate such that the pillars provide a radiation absorbing structure in the photovoltaic device.
摘要翻译： 一种制造光伏器件的方法包括在基片上涂布二嵌段共聚物层，并从二嵌段共聚物层除去第一聚合物材料以形成多个分布孔。 图案形成层沉积在二嵌段共聚物层的剩余表面上和与基材接触的孔中。 剥离二嵌段共聚物层，使图案形成层的一部分与基板保持接触。 使用图案形成层蚀刻衬底以保护衬底的部分以在衬底中形成柱，使得柱在光伏器件中提供辐射吸收结构。
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公开(公告)号：US20140011328A1
公开(公告)日：2014-01-09
申请号：US13544093
申请日：2012-07-09
IPC分类号： H01L21/84 , H01L21/8238
CPC分类号： H01L21/823807 , H01L21/823878 , H01L21/84 , H01L27/1203
摘要： A method for fabricating field effect transistors patterns a strained silicon layer formed on a dielectric layer of a substrate into at least one NFET region including at least a first portion of the strained silicon layer. The strained silicon layer is further patterned into at least one PFET region including at least a second portion of the strained silicon layer. A masking layer is formed over the first portion of the strained silicon layer. After the masking layer has been formed, the second strained silicon layer is transformed into a relaxed silicon layer. The relaxed silicon layer is transformed into a strained silicon germanium layer.
摘要翻译： 用于制造场效应晶体管的方法将形成在衬底的电介质层上的应变硅层图案化成至少一个包括应变硅层的第一部分的NFET区域。 将应变硅层进一步图案化成至少一个包括应变硅层的至少第二部分的PFET区域。 在应变硅层的第一部分上形成掩模层。 在形成掩模层之后，将第二应变硅层转变成松弛的硅层。 松弛的硅层被转变成应变硅锗层。
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77.发明申请公开(公告)号：US20140004651A1
公开(公告)日：2014-01-02
申请号：US13535812
申请日：2012-06-28
IPC分类号： H01L31/18
CPC分类号： H01L31/022425 , H01L31/03921 , H01L31/075 , H01L31/1864 , Y02E10/548 , Y02P70/521
摘要： A method for forming a photovoltaic device includes depositing one or more layers of a photovoltaic stack on a substrate by employing a high deposition rate plasma enhanced chemical vapor deposition (HDR PECVD) process. Contacts are formed on the photovoltaic stack to provide a photovoltaic cell. Annealing is performed on the photovoltaic cell at a temperature and duration configured to improve overall performance.
摘要翻译： 一种用于形成光伏器件的方法包括通过采用高沉积速率等离子体增强化学气相沉积（HDR PECVD）工艺在衬底上沉积一层或多层光伏堆叠。 在光伏堆叠上形成触点以提供光伏电池。 在光伏电池上进行退火，温度和持续时间被配置为提高整体性能。
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78.发明申请公开(公告)号：US20140000692A1
公开(公告)日：2014-01-02
申请号：US13544439
申请日：2012-07-09
IPC分类号： H01L31/0236 , H01L31/0224
CPC分类号： H01L31/02363 , H01L31/022425 , H01L31/022466 , H01L31/022483 , H01L31/02366 , H01L31/035281 , H01L31/105 , H01L31/1884 , Y02E10/50
摘要： A photovoltaic device includes a substrate layer having a plurality of three-dimensional structures formed therein providing a textured profile. A first electrode is formed over the substrate layer and extends over the three-dimensional structures including non-planar surfaces. The first electrode has a thickness configured to maintain the textured profile, and the first electrode includes a transparent conductive material having a dopant metal activated within the transparent conductive material. A continuous photovoltaic stack is conformally formed over the first electrode, and a second electrode is formed on the photovoltaic stack.
摘要翻译： 光伏器件包括其中形成有多个三维结构的衬底层，其提供纹理轮廓。 第一电极形成在衬底层之上，并且在包括非平面表面的三维结构上延伸。 第一电极具有被配置为保持纹理轮廓的厚度，并且第一电极包括在透明导电材料内激活的掺杂剂金属的透明导电材料。 在第一电极上保形地形成连续的光伏堆叠，并且在光伏堆叠上形成第二电极。
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公开(公告)号：US08617938B2
公开(公告)日：2013-12-31
申请号：US13013357
申请日：2011-01-25
IPC分类号： H01L27/00
CPC分类号： H01L21/2256 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A device and method for semiconductor fabrication includes forming a buffer layer on a semiconductor substrate and depositing an amorphous elemental layer on the buffer layer. Elements of the elemental layer are diffused through the buffer layer and into the semiconductor layer.
摘要翻译： 用于半导体制造的器件和方法包括在半导体衬底上形成缓冲层并在缓冲层上沉积非晶质元素层。 元素层的元素通过缓冲层扩散到半导体层中。
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公开(公告)号：US20130344644A1
公开(公告)日：2013-12-26
申请号：US13554886
申请日：2012-07-20
申请人： Bahman Hekmatshoartabari , Jeehwan Kim , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
发明人： Bahman Hekmatshoartabari , Jeehwan Kim , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
IPC分类号： H01L31/0264
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/1037
摘要： A photoreceptor includes a multilayer blocking structure to reduce dark discharge of the surface voltage of the photoreceptor resulting from electron injection from an electrically conductive substrate. The multilayer blocking structure includes wide band gap semiconductor layers in alternating sequence with one or more narrow band gap blocking layers. A fabrication method of the photoreceptor includes transfer-doping of the narrow band gap blocking layers, which are deposited in alternating sequence with wide band gap semiconductor layers to form a blocking structure. Suppression of hole or electron injection can be obtained using the method.
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