公开(公告)号：US20140000687A1

公开(公告)日：2014-01-02

申请号：US13535974

申请日：2012-06-28

申请人： Bahman Hekmatshoartabari ,  Ali Khakifirooz ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Bahman Hekmatshoartabari ,  Ali Khakifirooz ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/0236

CPC分类号： H01L31/02363 ,  H01L31/03529 ,  H01L31/0725 ,  Y02E10/50

摘要： A multi-junction photovoltaic device includes a germanium layer having pyramidal shapes with (111) facets exposed to form a textured surface. A first p-n junction is formed on or over the textured surface. Another p-n junction is formed over the first p-n junction and following the textured surface.

摘要翻译： 多结光伏器件包括具有金字塔形状的锗层，其具有暴露以形成纹理表面的（111）刻面。 在纹理表面上或上方形成第一个p-n结。 另一个p-n结形成在第一个p-n结上并跟随有纹理的表面。

公开(公告)号：US20130341770A1

公开(公告)日：2013-12-26

申请号：US13555271

申请日：2012-07-23

申请人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Ali Khakifirooz ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Ali Khakifirooz ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L29/02

CPC分类号： H01L21/31155 ,  H01L21/304 ,  H01L21/7624

摘要： An SOI substrate including a buried insulator layer positioned between a base substrate and a top semiconductor active layer is first provided. A semiconductor device can then be formed on and/or within a portion of the top semiconductor active layer. A bottommost surface of the buried insulator layer which is opposite a topmost surface of the buried insulator layer that forms an interface with the top semiconductor active layer can be then exposed. Ions can then be implanted through the bottommost surface of the buried insulator layer and into a portion of the buried insulator layer. The ions are implanted at energy ranges that do not disturb the buried insulator layer/top semiconductor active layer interface, while leaving a relatively thin portion of the buried insulator layer near the buried insulator layer/top semiconductor active layer interface intact.

摘要翻译： 首先提供包括位于基底基板和顶部半导体有源层之间的掩埋绝缘体层的SOI衬底。 然后可以在顶部半导体有源层的一部分上和/或内部形成半导体器件。 掩埋绝缘体层的与埋入绝缘体层的与顶部半导体活性层形成界面的最上表面相对的最底表面可以暴露。 然后，离子可以通过掩埋绝缘体层的最底部的表面注入埋入的绝缘体层的一部分中。 将离子注入到不会干扰埋入的绝缘体层/顶部半导体有源层界面的能量范围内，同时在掩埋的绝缘体层/顶部半导体活性层界面附近保留相当薄的部分隐埋绝缘体层。

公开(公告)号：US10396229B2

公开(公告)日：2019-08-27

申请号：US13103583

申请日：2011-05-09

申请人： Joel P. De Souza ,  Harold J. Hovel ,  Daniel A. Inns ,  Jeehwan Kim ,  Christian Lavoie ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Davood Shahrjerdi ,  Zhen Zhang

发明人： Joel P. De Souza ,  Harold J. Hovel ,  Daniel A. Inns ,  Jeehwan Kim ,  Christian Lavoie ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Davood Shahrjerdi ,  Zhen Zhang

IPC分类号： H01L31/07 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/068

摘要： A solar cell having n-type and p-type interdigitated back contacts (IBCs), which cover the entire back surface of the absorber layer. The spatial separation of the IBCs is in a direction perpendicular to the back surface, thus providing borderless contacts having a zero-footprint separation. As the contacts are on the back, photons incident on the cell's front surface can be absorbed without any shadowing.

公开(公告)号：US08927318B2

公开(公告)日：2015-01-06

申请号：US13160067

申请日：2011-06-14

申请人： Stephen W. Bedell ,  Devendra K. Sadana ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Devendra K. Sadana ,  Davood Shahrjerdi

IPC分类号： H01L31/0216 ,  H01L21/18 ,  H01L21/02 ,  H01L21/304 ,  H01L31/0687 ,  H01L31/18

CPC分类号： H01L31/074 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/0262 ,  H01L21/304 ,  H01L31/0304 ,  H01L31/0312 ,  H01L31/0687 ,  H01L31/06875 ,  H01L31/0725 ,  H01L31/0745 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1808 ,  H01L31/1852 ,  H01L31/1892 ,  Y02E10/544 ,  Y02P70/521

摘要： A method cleaving a semiconductor material that includes providing a germanium substrate having a germanium and tin alloy layer is present therein. A stressor layer is deposited on a surface of the germanium substrate. A stress from the stressor layer is applied to the germanium substrate, in which the stress cleaves the germanium substrate to provide a cleaved surface. The cleaved surface of the germanium substrate is then selective to the germanium and tin alloy layer of the germanium substrate. In another embodiment, the germanium and tin alloy layer may function as a fracture plane during a spalling method.

摘要翻译： 一种切割半导体材料的方法，其中包括提供具有锗和锡合金层的锗衬底。 应力层沉积在锗衬底的表面上。 来自应力层的应力施加到锗衬底，其中应力切割锗衬底以提供切割表面。 然后，锗衬底的切割表面对锗衬底的锗和锡合金层是选择性的。 在另一个实施例中，锗和锡合金层可以在剥落方法中用作断裂面。

公开(公告)号：US20130025653A1

公开(公告)日：2013-01-31

申请号：US13193260

申请日：2011-07-28

申请人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Davood Shahrjerdi

IPC分类号： H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/074 ,  H01L31/02167 ,  H01L31/022466 ,  H01L31/0304 ,  H01L31/036 ,  H01L31/077 ,  H01L31/20 ,  Y02E10/50 ,  Y02E10/544 ,  Y02P70/521

摘要： Solar cell structures that have improved carrier collection efficiencies at a heterointerface are provided by low temperature epitaxial growth of silicon on a III-V base. Additionally, a solar cell structure having improved open circuit voltage includes a shallow junction III-V emitter formed by epitaxy or diffusion followed by the epitaxy of SixGe1-x passivated by amorphous SiyGe1-y:H.

摘要翻译： 通过在III-V基底上的硅的低温外延生长，提供在异质界面上提高载流子收集效率的太阳能电池结构。 此外，具有改进的开路电压的太阳能电池结构包括通过外延或扩散形成的浅结III-V发射体，随后是通过非晶SiyGe1-y：H钝化的SixGe1-x的外延。

公开(公告)号：US20120318334A1

公开(公告)日：2012-12-20

申请号：US13160067

申请日：2011-06-14

申请人： Stephen W. Bedell ,  Devendra K. Sadana ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Devendra K. Sadana ,  Davood Shahrjerdi

IPC分类号： H01L31/075 ,  H01L21/78

CPC分类号： H01L31/074 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/0262 ,  H01L21/304 ,  H01L31/0304 ,  H01L31/0312 ,  H01L31/0687 ,  H01L31/06875 ,  H01L31/0725 ,  H01L31/0745 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1808 ,  H01L31/1852 ,  H01L31/1892 ,  Y02E10/544 ,  Y02P70/521

摘要： A method cleaving a semiconductor material that includes providing a germanium substrate having a germanium and tin alloy layer is present therein. A stressor layer is deposited on a surface of the germanium substrate. A stress from the stressor layer is applied to the germanium substrate, in which the stress cleaves the germanium substrate to provide a cleaved surface. The cleaved surface of the germanium substrate is then selective to the germanium and tin alloy layer of the germanium substrate. In another embodiment, the germanium and tin alloy layer may function as a fracture plane during a spalling method.

摘要翻译： 一种切割半导体材料的方法，其中包括提供具有锗和锡合金层的锗衬底。 应力层沉积在锗衬底的表面上。 来自应力层的应力施加到锗衬底，其中应力切割锗衬底以提供切割表面。 然后，锗衬底的切割表面对锗衬底的锗和锡合金层是选择性的。 在另一个实施例中，锗和锡合金层可以在剥落方法中用作断裂面。

公开(公告)号：US20120285518A1

公开(公告)日：2012-11-15

申请号：US13103583

申请日：2011-05-09

申请人： Joel P. De Souza ,  Harold John Hovel ,  Daniel Inns ,  Jeehwan Kim ,  Christian Lavoie ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Davood Shahrjerdi ,  Zhen Zhang

发明人： Joel P. De Souza ,  Harold John Hovel ,  Daniel Inns ,  Jeehwan Kim ,  Christian Lavoie ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Davood Shahrjerdi ,  Zhen Zhang

IPC分类号： H01L31/06 ,  H01L31/18

CPC分类号： H01L31/0682 ,  H01L31/022441 ,  H01L31/07 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell having n-type and p-type interdigitated back contacts (IBCs), which cover the entire back surface of the absorber layer. The spatial separation of the IBCs is in a direction perpendicular to the back surface, thus providing borderless contacts having a zero-footprint separation. As the contacts are on the back, photons incident on the cell's front surface can be absorbed without any shadowing.

摘要翻译： 一种太阳能电池，其具有覆盖吸收层的整个后表面的n型和p型交叉指接头（IBC）。 IBC的空间分离是在垂直于后表面的方向上，从而提供具有零占位分隔的无边界接触。 随着触点在背面，入射在电池前表面的光子可以被吸收而不会有任何阴影。

公开(公告)号：US20120118383A1

公开(公告)日：2012-05-17

申请号：US12946216

申请日：2010-11-15

申请人： Stephen W. Bedell ,  Norma E. Sosa Cortes ,  Wilfried E. Haensch ,  Steven J. Koester ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Ghavam Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Norma E. Sosa Cortes ,  Wilfried E. Haensch ,  Steven J. Koester ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Ghavam Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/0264 ,  H01L31/18

CPC分类号： H01L27/142 ,  H01L31/02008 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/076 ,  H01L31/078 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： An autonomous integrated circuit (IC) includes a solar cell formed on a bottom substrate of a silicon-on-insulator (SOI) substrate as a handle substrate; an insulating layer of the SOI substrate located on top of the solar cell; and a device layer formed on a top semiconductor layer of the SOI substrate located on top of the insulating layer, wherein a top contact of the device layer is electrically connected to a bottom contact of the solar cell such that the solar cell is enabled to power the device layer.

摘要翻译： 自主集成电路（IC）包括形成在作为处理衬底的绝缘体上硅（SOI）衬底的底部衬底上的太阳能电池; 位于太阳能电池顶部的SOI衬底的绝缘层; 以及形成在位于绝缘层顶部的SOI衬底的顶部半导体层上的器件层，其中器件层的顶部接触电连接到太阳能电池的底部接触，使得太阳能电池能够通电 设备层。

公开(公告)号：US08530337B1

公开(公告)日：2013-09-10

申请号：US13530605

申请日：2012-06-22

申请人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Ali Khakifirooz ,  John A. Ott ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Ali Khakifirooz ,  John A. Ott ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L21/304

CPC分类号： H01L22/12 ,  H01L21/304 ,  H01L21/7806 ,  H01L21/7813

摘要： Methods for detecting the physical layout of an integrated circuit are provided. The methods of the present disclosure allow large area imaging of the circuit layout without requiring tedious sample preparation techniques. The imaging can be performed utilizing low-energy beam techniques such as scanning electron microscopy; however, more sophisticated imaging techniques can also be employed. In the methods of the present disclosure, spalling is used to remove a portion of a semiconductor layer including at least one semiconductor device formed thereon or therein from a base substrate. In some cases, a buried insulator layer that is located beneath a semiconductor layer including the at least one semiconductor device can be completely or partially removed. In some cases, the semiconductor layer including the at least one semiconductor device can be thinned. The methods improve the detection quality that the buried insulator layer and a thick semiconductor layer can reduce.

公开(公告)号：US08518807B1

公开(公告)日：2013-08-27

申请号：US13530637

申请日：2012-06-22

申请人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Ali Khakifirooz ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Ali Khakifirooz ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L21/00

CPC分类号： H01L21/31155 ,  H01L21/304 ,  H01L21/7624

摘要： An SOI substrate including a buried insulator layer positioned between a base substrate and a top semiconductor active layer is first provided. A semiconductor device can then be formed on and/or within a portion of the top semiconductor active layer. A bottommost surface of the buried insulator layer which is opposite a topmost surface of the buried insulator layer that forms an interface with the top semiconductor active layer can be then exposed. Ions can then be implanted through the bottommost surface of the buried insulator layer and into a portion of the buried insulator layer. The ions are implanted at energy ranges that do not disturb the buried insulator layer/top semiconductor active layer interface, while leaving a relatively thin portion of the buried insulator layer near the buried insulator layer/top semiconductor active layer interface intact.