DISPLAY SUBSTRATE, DISPLAY PANEL AND DISPLAY APPARATUS

    公开(公告)号:US20240295784A1

    公开(公告)日:2024-09-05

    申请号:US18026489

    申请日:2022-06-22

    CPC classification number: G02F1/136286 G02F1/136209 G02F1/1368

    Abstract: A display substrate, a display panel and a display apparatus. The display substrate includes a first base substrate; a plurality of gate lines and a plurality of data lines which are arranged on a side of the first base substrate; the plurality of gate lines and the plurality of data lines are arranged to be intersected with each other and insulated from each other; a planarization layer, arranged on a side of the gate lines and the data lines away from the first base substrate, and including a first via hole; and a supporting structure, arranged on a side of the planarization layer away from the first base substrate and filled into the first via hole; and in a direction perpendicular to the first base substrate, a height of the supporting structure is greater than a depth of the first via hole.

    Display Substrate, Preparing Method Therefor, and Display Apparatus

    公开(公告)号:US20240276767A1

    公开(公告)日:2024-08-15

    申请号:US18022172

    申请日:2022-05-31

    CPC classification number: H10K59/1213 H10K59/1201

    Abstract: The present disclosure provides a display substrate, a preparing method therefor, and a display apparatus, the display substrate includes: a base substrate and a driving circuit layer arranged on the base substrate, the driving circuit layer further includes at least one first via hole, the first via hole is located between the second sub-electrode and the first active layer, an orthographic projection of the first via hole is overlapped with an orthographic projection of the first sub-electrode and an orthographic projection of the first active layer on the base substrate respectively, the first via hole exposes at least a portion of the first sub-electrode and at least a portion of the first active layer respectively, the second sub-electrode is electrically connected with the exposed first sub-electrode through the first via hole, and the second sub-electrode is electrically connected with the exposed first active layer through the first via hole.

    THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, AND DISPLAY SUBSTRATE

    公开(公告)号:US20240204004A1

    公开(公告)日:2024-06-20

    申请号:US17910133

    申请日:2021-12-27

    CPC classification number: H01L27/124 H01L27/1259 H01L27/1222

    Abstract: Provided are a thin-film transistor and a manufacturing method thereof, and a display substrate, belonging to the technical field of thin-film transistors. The thin-film transistor includes: a base substrate; a gate electrode on the base substrate; an active layer on a side of the gate electrode away from the base substrate, an orthographic projection of the active layer onto the base substrate overlapping with an orthographic projection of the gate electrode onto the base substrate; and a first electrode and a second electrode on a side of the active layer away from the base substrate, the first electrode being one of a source electrode and a drain electrode, and the second electrode being the other of the source electrode and the drain electrode. Specifically the active layer includes a channel region corresponding to a gap between the first electrode and the second electrode, and a width direction of the channel region is perpendicular or substantially perpendicular to an extending direction of the gate electrode. According to the embodiments of the present disclosure, the illumination stability of the thin-film transistor can be improved without reducing the transmittance of the substrate.

    SEMICONDUCTOR MATERIAL, LIGHT-EMITTING DEVICE, DISPLAY PANEL AND DISPLAY DEVICE

    公开(公告)号:US20240128327A1

    公开(公告)日:2024-04-18

    申请号:US18016899

    申请日:2022-02-17

    CPC classification number: H01L29/24 H01L29/7869

    Abstract: The present disclosure has disclosed a semiconductor material, light-emitting device, display panel and display device. The semiconductor material comprises: at least two of an oxide of a first element, an oxide of a second element, an oxide of a third element, an oxide of a fourth element and a compound of fifth element, and comprises at least the oxide of the first element and the compound of the fifth element; the first element comprises at least one of In, Zn, Sn, Cd, Tl and Pb; the second element comprises at least one of Ta, Ga, W, Ba, V, Hf and Nb; the third element comprises at least one of Sn, Zr, Cr and Si; the fourth element comprises at least one of Zn, Al, Sn, Ta, Hf, Zr and Ti; and the compound of the fifth element comprises MxA.

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