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132 条记录 (耗时 0.047 秒)

    Magnetoresistive read transducer having improved bias profile
    71.
    发明授权
    Magnetoresistive read transducer having improved bias profile 失效
    具有改进的偏置轮廓的磁阻读取传感器

    公开(公告)号：US5285339A

    公开(公告)日：1994-02-08

    申请号：US843702

    申请日：1992-02-28

    申请人： Mao-Min Chen ,  Kochan Ju ,  Mohamad T. Krounbi ,  Ching H. Tsang ,  Po-Kang Wang

    发明人： Mao-Min Chen ,  Kochan Ju ,  Mohamad T. Krounbi ,  Ching H. Tsang ,  Po-Kang Wang

    IPC分类号： G11B5/39 ,  G11B5/127

    CPC分类号： G11B5/3903

    摘要： An MR read transducer having passive end regions separated by a central active region comprises an MR layer made from a material having a low uniaxial magnetic anisotropy. A soft magnetic bias layer is adjacent to but spaced from the MR layer in the central region only, and the soft magnetic bias layer is made from a material having a high uniaxial magnetic anisotropy. A longitudinal bias is produced directly in each of the end regions only, and the means for producing the longitudinal bias comprise a layer made from a material having a high uniaxial magnetic anisotropy. Control of the uniaxial anisotropy can be achieved by choosing materials of appropriate magnetostriction or intrinsic uniaxial anisotropy.

    摘要翻译： 具有由中心有源区域分离的无源端区域的MR读取传感器包括由具有低单轴磁各向异性的材料制成的MR层。 软磁偏置层仅与中心区域中的MR层相邻但间隔开，并且软磁偏置层由具有高单轴磁各向异性的材料制成。 仅在每个端部区域中直接产生纵向偏压，并且用于产生纵向偏压的装置包括由具有高单轴磁各向异性的材料制成的层。 单轴各向异性的控制可以通过选择适当的磁致伸缩材料或固有单轴各向异性来实现。

    Close packed magnetic head linear array
    73.
    发明授权
    Close packed magnetic head linear array 失效
    封闭磁头线性阵列

    公开(公告)号：US5452165A

    公开(公告)日：1995-09-19

    申请号：US214902

    申请日：1994-03-16

    申请人： Mao-Min Chen ,  Kochan Ju ,  Mohamad T. Krounbi ,  Denny D. Tang ,  Po-Kang Wang

    发明人： Mao-Min Chen ,  Kochan Ju ,  Mohamad T. Krounbi ,  Denny D. Tang ,  Po-Kang Wang

    IPC分类号： G11B5/008 ,  G11B5/012 ,  G11B5/31 ,  G11B5/48 ,  G11B5/56 ,  G11B5/584 ,  G11B5/29

    CPC分类号： G11B5/3103 ,  G11B5/3183 ,  G11B5/4886 ,  G11B5/4893 ,  G11B5/56 ,  G11B5/584 ,  G11B5/00817 ,  G11B5/012

    摘要： The present invention includes a plurality of thin film magnetic heads which are arranged in a linear array with a spacing D between adjacent heads. The pole pieces of the magnetic heads are positioned in a side by side relationship in contrast to the normal pancake type of magnetic head. The linear array is angled at a skew angle .theta. with respect to the direction of travel of the magnetic medium. The track pitch is then D sin .theta.. The track width is substantially equal to the thickness of the pole tips P1T and P2T of the magnetic heads. This thickness can be in the order of 3 .mu.m. With such a pole tip thickness the track pitch of each magnetic head in the linear array can be 3-4 .mu.m. A plurality of narrow data tracks can then be provided with minimum pitch by a corresponding number of magnetic heads. The write signals are simultaneously fed to the heads or the read signals are simultaneously fed to the heads. This allows high data rates to be processed. The invention also provides different azimuth between adjacent heads to minimize cross talk between the tracks caused by track misregistration. Additional magnetic heads can be employed for servo control as needed.

    摘要翻译： 本发明包括多个薄膜磁头，其以相邻磁头之间的间隔D布置成线性阵列。 与正常的煎饼型磁头相反，磁头的极片与并排的关系定位。 线性阵列相对于磁性介质的行进方向以偏斜角θ成角度。 轨道间距为Dsinθ。 轨道宽度基本上等于磁头的极尖P1T和P2T的厚度。 该厚度可以在3μm左右。 具有这样的极尖厚度，线阵列中每个磁头的轨道间距可以是3-4μm。 然后可以通过相应数量的磁头以最小间距来提供多个窄数据轨道。 写入信号被同时馈送到头部，或者读取信号被同时馈送到头部。 这样可以处理高数据速率。 本发明还提供相邻头部之间的不同方位角，以最小化由轨道重合失调引起的轨道之间的串扰。 可根据需要使用额外的磁头进行伺服控制。

    Sacrificial layer planarization process for fabricating a narrow thin film inductive head
    74.
    发明授权
    Sacrificial layer planarization process for fabricating a narrow thin film inductive head 失效
    用于制造窄薄膜感应头的牺牲层平坦化工艺

    公开(公告)号：US5283942A

    公开(公告)日：1994-02-08

    申请号：US998085

    申请日：1992-12-29

    申请人： Mao-Min Chen ,  Jyh-Shuey J. Lo ,  Po-Kang Wang

    发明人： Mao-Min Chen ,  Jyh-Shuey J. Lo ,  Po-Kang Wang

    IPC分类号： G11B5/31 ,  G11B5/42

    CPC分类号： G11B5/3163 ,  G11B5/3116 ,  Y10T29/49046 ,  Y10T29/49052

    摘要： A process for producing a planar thin film magnetic head wherein a sacrificial layer is introduced to provide control of the gap planarization procedure. Unbounded planar layers of lower pole-tip material and nonmagnetic gap material are first deposited and covered with a sacrificial layer that may be selectively removed by solvent. A critical layer island is then formed by etching the excess, thereby ensuring ideal planar characteristics at the edges of the critical gap layer. Following island formation, the entire assembly is covered with a nonmagnetic insulating layer and lapped or etched smooth. This planarization process is adjusted to end in the sacrificial layer. The remaining sacrificial layer material is then removed by solvent, a step that not only ensures the integrity of the underlying critical gap and pole layers but also creates the upper step needed for staggered pole-tip and conformal pole-tip head configurations.

    摘要翻译： 一种制造平面薄膜磁头的方法，其中引入牺牲层以提供间隙平坦化过程的控制。 首先沉积下极尖材料和非磁性间隙材料的无界平面层，并用可以通过溶剂选择性去除的牺牲层覆盖。 然后通过蚀刻过量形成临界层岛，从而确保在临界间隙层的边缘处的理想平面特性。 随着岛形成，整个组件被非磁性绝缘层覆盖并且被研磨或蚀刻光滑。 该平坦化处理被调整为在牺牲层中结束。 然后通过溶剂去除剩余的牺牲层材料，该步骤不仅确保了下面的关键间隙和极层的完整性，而且产生了交错的极尖和共形极尖头构造所需的上部步骤。

    Method of making pole tip structure for thin film magnetic heads
    75.
    发明授权
    Method of making pole tip structure for thin film magnetic heads 失效
    制造薄膜磁头极头结构的方法

    公开(公告)号：US5393376A

    公开(公告)日：1995-02-28

    申请号：US175886

    申请日：1993-12-30

    申请人： Mao-Min Chen ,  Kochan Ju ,  Neil L. Robertson ,  Po-Kang Wang

    发明人： Mao-Min Chen ,  Kochan Ju ,  Neil L. Robertson ,  Po-Kang Wang

    IPC分类号： G11B5/31 ,  B44C1/22 ,  C03C15/00 ,  C03C25/00

    CPC分类号： G11B5/3163 ,  G11B5/3116 ,  G11B5/3183

    摘要： A simplified method is provided for making a thin film magnetic head pole tip structure which includes a sidegap G sandwiched between pole tips PT1 and PT2. The method includes depositing bottom and top seedlayers with an insulation layer sandwiched therebetween. The pole tip PT2 is frame plated on top of the top seedlayer with top and bottom film surfaces which are bounded in part by a pair of spaced-apart sidewalls. The second seedlayer and preferably a depth portion of the insulation layer are removed with the exception of width portions of these layers below the pole tip PT1. A gap insulation layer is deposited on a sidewall of the pole tip PT1 to form the sidegap. The insulation layer with the exception of a portion of an insulation layer below the pole tip PT1 is removed to expose a portion of the bottom seedlayer adjacent to the pole tip PT1 where the pole tip PT2 is to be formed. The pole tip PT2 is then frame plated on top of the exposed portion of the first seedlayer adjacent to the sidegap to complete the desired thin film magnetic head.

    摘要翻译： 提供了一种制造薄膜磁头极尖端结构的简化方法，其包括夹在极尖PT1和PT2之间的侧隙G。 该方法包括沉积具有夹在其间的绝缘层的底部和顶部种子层。 极尖PT2被框架镀在顶部种子层的顶部上，顶部和底部膜表面部分地由一对间隔开的侧壁限定。 除了绝缘层的深度部分之外，除了这些层在极端PT1下方的宽度部分之外，除去第二种子层。 间隙绝缘层沉积在极尖PT1的侧壁上以形成侧隙。 去除绝缘层，绝缘层除极点PT1下方的绝缘层除外以露出与要形成极尖PT2的极尖PT1相邻的底部种子层的一部分。 然后将极端PT2框架电镀在与侧隙相邻的第一种子层的暴露部分的顶部上，以完成所需的薄膜磁头。

    Underlayer for high performance magnetic tunneling junction MRAM
    76.
    发明授权
    Underlayer for high performance magnetic tunneling junction MRAM 有权
    高性能磁隧道结MRAM底层

    公开(公告)号：US08673654B2

    公开(公告)日：2014-03-18

    申请号：US12589465

    申请日：2009-10-23

    申请人： Liubo Hong ,  Cheng Horng ,  Mao-Min Chen ,  Ru-Yin Tong

    发明人： Liubo Hong ,  Cheng Horng ,  Mao-Min Chen ,  Ru-Yin Tong

    IPC分类号： H01L21/00

    CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  G11C11/1673 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114

    摘要： An MRAM structure is disclosed in which the bottom electrode has an amorphous TaN capping layer to consistently provide smooth and dense growth for AFM, pinned, tunnel barrier, and free layers in an overlying MTJ. Unlike a conventional Ta capping layer, TaN is oxidation resistant and has high resistivity to avoid shunting of a sense current caused by redeposition of the capping layer on the sidewalls of the tunnel barrier layer. Alternatively, the α-TaN layer is the seed layer in the MTJ. Furthermore, the seed layer may be a composite layer comprised of a NiCr, NiFe, or NiFeCr layer on the α-TaN layer. An α-TaN capping layer or seed layer can also be used in a TMR read head. An MTJ formed on an α-TaN capping layer has a high MR ratio, high Vb, and a RA similar to results obtained from MTJs based on an optimized Ta capping layer.

    摘要翻译： 公开了一种MRAM结构，其中底部电极具有无定形TaN覆盖层，以一致地提供在覆盖的MTJ中的AFM，固定，隧道势垒和自由层的平滑且致密的生长。 与传统的Ta覆盖层不同，TaN是抗氧化的并且具有高电阻率以避免由于覆盖层在隧道势垒层的侧壁上的再沉积引起的感测电流的分流。 或者，α-TaN层是MTJ中的种子层。 此外，种子层可以是由α-TaN层上的NiCr，NiFe或NiFeCr层构成的复合层。 也可以在TMR读取头中使用α-TaN覆盖层或种子层。 在α-TaN覆盖层上形成的MTJ具有高MR比，高Vb和RA，其类似于基于优化的Ta覆盖层的MTJ获得的结果。

    Spacer structure in MRAM cell and method of its fabrication
    77.
    发明授权
    Spacer structure in MRAM cell and method of its fabrication 有权
    MRAM单元的间隔结构及其制作方法

    公开(公告)号：US07880249B2

    公开(公告)日：2011-02-01

    申请号：US11290763

    申请日：2005-11-30

    申请人： Jun Yuan ,  Liubo Hong ,  Mao-Min Chen

    发明人： Jun Yuan ,  Liubo Hong ,  Mao-Min Chen

    IPC分类号： H01L29/82

    CPC分类号： H01L43/12 ,  H01L27/222 ,  H01L43/08

    摘要： Methods are presented for fabricating an MTJ element having a precisely controlled spacing between its free layer and a bit line and, in addition, having a protective spacer layer formed abutting the lateral sides of the MTJ element to eliminate leakage currents between MTJ layers and the bit line. Each method forms a dielectric spacer layer on the lateral sides of the MTJ element and, depending on the method, includes an additional layer that protects the spacer layer during etching processes used to form a Cu damascene bit line. At various stages in the process, a dielectric layer is also formed to act as a CMP stop layer so that the capping layer on the MTJ element is not thinned by the CMP process that planarizes the surrounding insulation. Subsequent to planarization, the stop layer is removed by an anisotropic etch of such precision that the MTJ element capping layer is not thinned and serves to maintain an exact spacing between the bit line and the MTJ free layer.

    摘要翻译： 提出了用于制造在其自由层和位线之间具有精确控制的间隔的MTJ元件的方法，此外，具有邻接MTJ元件的侧面形成的保护性间隔层以消除MTJ层与钻头之间的泄漏电流 线。 每种方法在MTJ元件的侧面上形成电介质间隔层，并且根据该方法，包括在用于形成Cu镶嵌位线的蚀刻工艺期间保护间隔层的附加层。 在该过程的各个阶段，还形成介电层以用作CMP停止层，使得MTJ元件上的覆盖层不会通过使周围绝缘平坦化的CMP工艺变薄。 在平坦化之后，通过各向异性蚀刻去除停止层，其精度使得MTJ元件覆盖层不变薄并且用于保持位线和MTJ自由层之间的精确间隔。

    Novel hard bias design for sensor applications
    78.
    发明申请
    Novel hard bias design for sensor applications 有权
    传感器应用的新型硬偏置设计

    公开(公告)号：US20060132988A1

    公开(公告)日：2006-06-22

    申请号：US11016506

    申请日：2004-12-17

    申请人： Kunliang Zhang ,  Mao-Min Chen ,  Chyu-Jiuh Torng ,  Min Li ,  Chen-Jung Chien

    发明人： Kunliang Zhang ,  Mao-Min Chen ,  Chyu-Jiuh Torng ,  Min Li ,  Chen-Jung Chien

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49032

    摘要： A hard bias structure for biasing a free layer in a MR element within a magnetic read head is comprised of a soft magnetic underlayer such as NiFe and a hard bias layer comprised of Co78.6Cr5.2Pt16.2 or Co65Cr15Pt20 that are rigidly exchange coupled to ensure a well aligned longitudinal biasing direction with minimal dispersions. The hard bias structure is formed on a BCC seed layer such as CrTi to improve lattice matching. The hard bias structure may be laminated in which each of the underlayers and hard bias layers has a thickness that is adjusted to optimize the total HC, Mrt, and S values. The present invention encompasses CIP and CPP spin values, MTJ devices, and multi-layer sensors. A larger process window for fabricating the hard bias structure is realized and lower asymmetry output and NBLW reject rates during a read operation are achieved.

    摘要翻译： 用于偏置磁读头内的MR元件中的自由层的硬偏压结构由诸如NiFe的软磁性底层和由Co ++ 78.6Cr 5.2构成的硬偏置层组成， 或刚性交换耦合以确保良好对准的/SUB>Pt16.2 或Co 15 Cr 15 纵向偏置方向最小分散。 在诸如CrTi的BCC种子层上形成硬偏压结构以改善晶格匹配。 可以层压硬偏压结构，其中每个底层和硬偏压层具有被调节以使总H C，M L t和S的最大化的厚度 价值观。 本发明包括CIP和CPP旋转值，MTJ装置和多层传感器。 实现了用于制造硬偏置结构的更大的工艺窗口，并且实现了读操作期间较低的不对称输出和NBLW废弃率。