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198 条记录 (耗时 0.054 秒)

    MAGNETIC BIOLOGICAL ENTITY SEPARATION DEVICE AND METHOD OF USE
    74.
    发明申请
    MAGNETIC BIOLOGICAL ENTITY SEPARATION DEVICE AND METHOD OF USE 审中-公开

    公开(公告)号：US20190270092A1

    公开(公告)日：2019-09-05

    申请号：US15911116

    申请日：2018-03-03

    申请人： Yuchen Zhou

    发明人： Yuchen Zhou

    IPC分类号： B03C1/033 ,  B03C1/28 ,  B03C1/30

    摘要： The current invention relates to the method and apparatus to magnetically separate biological entities with magnetic labels from a fluid sample. The claimed methods separate biological entities with magnetic labels by using a magnetic device. The claimed methods further include processes to dissociate biological entities magnetic conglomerate after magnetic separation.

    MICROFLUIDIC DEVICE AND METHOD OF USE
    75.
    发明申请
    MICROFLUIDIC DEVICE AND METHOD OF USE 审中-公开

    公开(公告)号：US20190270036A1

    公开(公告)日：2019-09-05

    申请号：US15911184

    申请日：2018-03-05

    申请人： Yuchen Zhou

    发明人： Yuchen Zhou

    IPC分类号： B01D21/28 ,  B03C1/033 ,  B03C1/28 ,  B03C1/30 ,  B01L3/00

    摘要： The current invention relates to the device and method to separate biological entities from a sample fluid by a microfluidic device. The claimed methods separate biological entities by differentiating the sizes of the biological entities with ultrasound modes. The claimed methods further utilize a multi-staged design that removes smaller size entities at earlier and wider sections and concentrates larger entities at later and narrower sections of a microfluidic channel.

    Guided transport of magnetically labeled biological molecules and cells
    78.
    发明授权
    Guided transport of magnetically labeled biological molecules and cells 有权

    公开(公告)号：US09656271B2

    公开(公告)日：2017-05-23

    申请号：US11999171

    申请日：2007-12-04

    申请人： Yuchen Zhou ,  Yimin Guo

    发明人： Yuchen Zhou ,  Yimin Guo

    IPC分类号： G01N1/36 ,  B03C1/033 ,  B03C1/034 ,  B03C1/28

    CPC分类号： B03C1/033 ,  B03C1/034 ,  B03C1/288 ,  B03C2201/18 ,  B03C2201/26

    摘要： Presented herein is a method and devices for identifying biological molecules and cells labeled by small magnetic particles and by optically active dyes. The labeled molecules are typically presented in a biological fluid but are then magnetically guided into narrow channels by a sequential process of magnetically trapping and releasing the magnetic labels that is implemented by sequential synchronized reversing the magnetic fields of a regular array of patterned magnetic devices that exert forces on the magnetic particles. These devices, which may be bonded to a substrate, can be formed as parallel magnetic strips adjacent to current carrying lines or can be substantially of identical structure to trilayered MTJ cells. Once the magnetically labeled molecules have been guided into the appropriate channels, their optical labels can be detected by a process of optical excitation and de-excitation. The molecules are thereby identified and counted.

    Magnetic random access memory (MRAM) with enhanced magnetic stiffness and method of making same
    79.
    发明授权
    Magnetic random access memory (MRAM) with enhanced magnetic stiffness and method of making same 有权
    具有增强磁刚度的磁性随机存取存储器（MRAM）及其制造方法

    公开(公告)号：US09070464B2

    公开(公告)日：2015-06-30

    申请号：US13341826

    申请日：2011-12-30

    申请人： Yuchen Zhou ,  Yiming Huai

    发明人： Yuchen Zhou ,  Yiming Huai

    IPC分类号： H01L43/12 ,  G11C11/16

    CPC分类号： G11C11/161 ,  H01L43/12

    摘要： A spin transfer torque magnetic random access memory (STTMRAM) element and a method of manufacturing the same is disclosed having a free sub-layer structure with enhanced internal stiffness. A first free sub-layer is deposited, the first free sub-layer being made partially of boron (B), annealing is performed of the STTMRAM element at a first temperature after depositing the first free sub-layer to reduce the B content at an interface between the first free sub-layer and the barrier layer, the annealing causing a second free sub-layer to be formed on top of the first free sub-layer and being made partially of B, the amount of B of the second free sub-layer being greater than the amount of B in the first free sub-layer. Cooling down the STTMRAM element to a second temperature that is lower than the first temperature and depositing a third free sub-layer directly on top of the second free layer, with the third free sub-layer being made partially of boron (B), wherein the amount of B in the third sub-free layer is less than the amount of B in the second free sub-layer.

    摘要翻译： 公开了具有增强的内部刚度的自由子层结构的自旋转矩磁性随机存取存储器（STTMRAM）元件及其制造方法。 沉积第一自由子层，第一自由子层部分由硼（B）制成，在沉积第一自由子层之后，在第一温度下对STTMRAM元素进行退火，以降低B 在第一自由子层和阻挡层之间的界面，退火使第二自由子层形成在第一自由子层的顶部上并且部分地由B构成，第二自由子层的B的量 层大于第一自由子层中的B的量。 将STTMRAM元件冷却至低于第一温度的第二温度，并将第三自由子层直接沉积在第二自由层的顶部上，第三自由子层部分由硼（B）制成，其中 第三子自由层中的B的量小于第二自由子层中的B的量。

    Multilayer structure with high perpendicular anisotropy for device applications
    80.
    发明授权
    Multilayer structure with high perpendicular anisotropy for device applications 有权
    用于器件应用的具有高垂直各向异性的多层结构

    公开(公告)号：US08920947B2

    公开(公告)日：2014-12-30

    申请号：US12802091

    申请日：2010-05-28

    申请人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

    发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

    IPC分类号： G11B5/39 ,  G01R33/06 ,  G11B5/84 ,  G01R33/09 ,  G11B5/66 ,  G11B5/73 ,  G11C11/16 ,  G11B5/00

    CPC分类号： G11B5/84 ,  G01R33/098 ,  G11B5/3932 ,  G11B5/66 ,  G11B5/732 ,  G11B5/7325 ,  G11B2005/0024 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  Y10T428/1114

    摘要： Perpendicular magnetic anisotropy and Hc are enhanced in magnetic devices with a Ta/M1/M2 seed layer where M1 is preferably Ti, and M2 is preferably Cu, and including an overlying (Co/Ni)X multilayer (x is 5 to 50) that is deposited with ultra high Ar pressure of >100 sccm to minimize impinging energy that could damage (Co/Ni)X interfaces. In one embodiment, the seed layer is subjected to one or both of a low power plasma treatment and natural oxidation process to form a more uniform interface with the (Co/Ni)X multilayer. Furthermore, an oxygen surfactant layer may be formed at one or more interfaces between adjoining (Co/Ni)X layers in the multilayer stack. Annealing at temperatures between 180° C. and 400° C. also increases Hc but the upper limit depends on whether the magnetic device is MAMR, MRAM, a hard bias structure, or a perpendicular magnetic medium.

    摘要翻译： 在具有Ta优选为Ti的Ta / M1 / M2种子层的磁性装置中，垂直磁各向异性和Hc增强，并且M2优选为Cu，并且包括覆盖（Co / Ni）X多层（x为5至50）， 以超过100 sccm的超高Ar压力沉积，以尽量减少可能损坏（Co / Ni）X界面的冲击能量。 在一个实施方案中，种子层经受低功率等离子体处理和天然氧化过程中的一种或两种以与（Co / Ni）X多层形成更均匀的界面。 此外，可以在多层叠层中的相邻（Co / Ni）X层之间的一个或多个界面处形成氧表面活性剂层。 在180°C至400°C的温度下退火也会增加Hc，但上限取决于磁性装置是MAMR，MRAM，硬偏压结构还是垂直磁介质。