公开(公告)号：US06217718B1

公开(公告)日：2001-04-17

申请号：US09251690

申请日：1999-02-17

申请人： Ralf Holmann ,  Zheng Xu

发明人： Ralf Holmann ,  Zheng Xu

IPC分类号： C23C1434

CPC分类号： H01J37/321 ,  C23C14/32 ,  C23C14/358

摘要： An apparatus for processing a workpiece by delivering ions to the workpiece, which apparatus includes a processing chamber, a workpiece support having a workpiece support surface in the chamber, a sputtering target in the chamber and a coil for creating an inductively coupled plasma to sputter material from the target, ionize the sputtered material and direct the ionized, sputtered material at the workpiece. The coil is connected to receive an RF current for establishing in the coil an RF voltage having a peak-to-peak amplitude which varies between a minimum value at a first location along the circumference and a maximum value at a second location along the circumference, the first and second locations being substantially diametrically opposite one another, the RF voltage variation producing a corresponding variation in plasma density around the central axis. In order to counteract this plasma density variation, the coil is positioned so that the second location is at a greater distance than the first location from a plane containing the workpiece support surface. The coil may be formed to have a cross section which varies along the circumference from a maximum area at the first location to a minimum area at the second location.

摘要翻译： 一种用于通过将离子输送到工件来处理工件的装置，该装置包括处理室，在腔室中具有工件支撑表面的工件支撑件，腔室中的溅射靶，以及用于产生感应耦合等离子体以溅射材料的线圈 从目标，离子化溅射的材料，并引导电离溅射材料在工件。 线圈被连接以接收RF电流，以在线圈中建立具有在沿着圆周的第一位置处的最小值和沿着圆周的第二位置处的最大值之间变化的峰 - 峰幅度的RF电压， 第一和第二位置基本上沿径向相反，RF电压变化产生围绕中心轴的等离子体密度的相应变化。 为了抵消该等离子体密度变化，线圈被定位成使得第二位置距离包含工件支撑表面的平面的第一位置更大的距离。 线圈可以形成为具有沿着圆周从第一位置处的最大面积变化到第二位置处的最小面积的横截面。

公开(公告)号：US6080285A

公开(公告)日：2000-06-27

申请号：US152651

申请日：1998-09-14

申请人： Joanna Liu ,  Zheng Xu

发明人： Joanna Liu ,  Zheng Xu

IPC分类号： C23C14/04 ,  C23C14/34 ,  C23C14/35 ,  H01L21/285 ,  H01L21/768

CPC分类号： C23C14/35 ,  C23C14/046 ,  C23C14/345 ,  C23C14/3471 ,  C23C14/3492 ,  H01L21/2855 ,  H01L21/76843

摘要： A multiple step process sputter deposits material of uniform thickness on stepped surfaces of an integrated circuit substrate such as the surfaces of a high aspect ratio via or a narrow trench. Material is first sputter deposited at the bottom of the opening at high pressure using a source of high power RF energy connected to a coil in the deposition chamber to couple energy into the plasma. A high power RF bias is applied to the substrate, and a low power DC bias is applied to the sputtering target. The same parameters are repeated in a second step except that the high power RF bias on the substrate support is either reduced to a low power level or reduced to zero (by the end of the second step) to deposit on the lowest quarter of the sidewall of the opening. In a third step, no RF bias is applied to the pedestal remains and the pressure is reduced to a medium pressure state, resulting in a deposition on the second quarter of the sidewall of the opening. In a fourth step, the RF power coupled to the plasma is reduced to a low level, resulting in deposition on the third quarter of sidewall of the opening. Finally, the last quarter of the sidewall of the opening is deposited upon by lowering the pressure further to a low pressure state and applying a high power DC bias to the target.

摘要翻译： 多步骤工艺在诸如高纵横比通孔或窄沟槽的表面的集成电路基板的台阶表面上溅射沉积具有均匀厚度的材料。 首先使用连接到沉积室中的线圈的高功率RF能量的源在高压下在材料的底部溅射沉积材料，以将能量耦合到等离子体中。 向衬底施加高功率RF偏压，并且向溅射靶施加低功率DC偏压。 在第二步骤中重复相同的参数，除了衬底支撑件上的高功率RF偏压被降低到低功率水平或者减小到零（到第二步骤结束）以沉积在侧壁的最低四分之一上 的开幕。 在第三步骤中，没有RF偏压施加到基座保持件并且压力降低到中等压力状态，导致在开口的侧壁的第二个四分之一上的沉积。 在第四步骤中，耦合到等离子体的RF功率被降低到低水平，导致在开口的侧壁的第三季度上沉积。 最后，通过将压力进一步降低到低压状态并向目标施加高功率DC偏压来沉积开口侧壁的最后四分之一。

公开(公告)号：US5962923A

公开(公告)日：1999-10-05

申请号：US511825

申请日：1995-08-07

申请人： Zheng Xu ,  John Forster ,  Tse-Yong Yao

发明人： Zheng Xu ,  John Forster ,  Tse-Yong Yao

IPC分类号： C23C14/00 ,  C23C14/04 ,  C23C14/06 ,  C23C14/32 ,  C23C14/35 ,  H01L21/203 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/485 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L21/2855 ,  C23C14/0036 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/32 ,  C23C14/358 ,  H01J37/34 ,  H01L21/28518 ,  H01L21/76846 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76882 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53233 ,  H01L23/53238 ,  H01J2237/32 ,  H01L2924/0002

摘要： The present invention pertains to a carrier layer and a contact enabled by the carrier layer which enables the fabrication of aluminum (including aluminum alloys and other conductive materials having a similar melting point) electrical contacts in multilayer integrated circuit vias, through holes, or trenches having an aspect ratio greater than one. In fact, the structure has been shown to enable such contact fabrication in vias, through holes, and trenches having aspect ratios as high as at least 5:1, and should be capable of filing apertures having aspect ratios up to about 12:1. The carrier layer, in addition to permitting the formation of a conductive contact at high aspect ratio, provides a diffusion barrier which prevents the aluminum from migrating into surrounding substrate material which operates in conjunction with the electrical contact. The carrier layer preferably comprises a layer formed by ionizing the flux of sputter deposition maternal partially reacting the flux with a gas, and depositing the resulting material on a substrate.

摘要翻译： 本发明涉及载体层和由载体层实现的接触，其能够在多层集成电路通孔，通孔或沟槽中制造具有类似熔点的铝（包括铝合金和具有相似熔点的其它导电材料）电接触，所述多层集成电路通孔，通孔或沟槽具有 长宽比大于1。 事实上，已经显示了这种结构能够使通孔，通孔和沟槽中的这种接触制造具有高达至少5:1的纵横比，并且应该能够填充具有高达约12:1的纵横比的孔。 除了允许以高纵横比形成导电接触之外，载体层提供了扩散阻挡层，其防止铝迁移到与电触点一起操作的周围基底材料中。 载体层优选地包括通过使熔剂与气体部分反应的溅射沉积母体的电离离子形成的层，并将所得材料沉积在基底上。

公开(公告)号：US5851364A

公开(公告)日：1998-12-22

申请号：US892778

申请日：1997-07-15

申请人： Jianming Fu ,  Zheng Xu

发明人： Jianming Fu ,  Zheng Xu

IPC分类号： C23C14/06 ,  C23C14/02 ,  C23C14/16 ,  C23C14/34 ,  H01L21/28 ,  H01L21/285 ,  H01L21/321 ,  H01L21/768 ,  H01L23/522 ,  C23C14/00

CPC分类号： H01L21/76862 ,  C23C14/025 ,  C23C14/165 ,  H01L21/2855 ,  H01L21/321 ,  H01L21/76843 ,  H01L21/76856

摘要： A process for making an aluminum contact comprising sputter depositing in a contact opening in a semiconductor substrate a first layer of titanium, forming a thin layer of titanium oxide thereover, sputter depositing a titanium nitride layer, smoothing the titanium nitride layer in an argon plasma, and sputter depositing an aluminum contact over the treated titanium nitride layer. The argon plasma treatment smooths the surface of the titanium nitride layer and improves the wettability between this layer and aluminum.

摘要翻译： 一种制造铝接触的方法，包括在半导体衬底中的接触开口中溅射沉积第一层钛，在其上形成薄层的氧化钛，溅射沉积氮化钛层，在氩等离子体中平滑氮化钛层， 并在处理的氮化钛层上溅射沉积铝接触。 氩等离子体处理使氮化钛层的表面平滑，并且改善了该层与铝之间的润湿性。

公开(公告)号：US5847461A

公开(公告)日：1998-12-08

申请号：US664717

申请日：1996-06-17

申请人： Zheng Xu ,  Tse-Yong Yao ,  Hoa Kieu ,  Julio Aranovich

发明人： Zheng Xu ,  Tse-Yong Yao ,  Hoa Kieu ,  Julio Aranovich

IPC分类号： H01L21/28 ,  H01L21/768 ,  H01L23/532 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/53223 ,  H01L21/76877 ,  H01L2924/0002

摘要： A process and resulting structure are described for using a metal layer formed over an insulating layer as both the filler material to fill openings in the insulating layer and as the patterned metal interconnect or wiring harness on the surface of the insulating layer. The process includes the steps of forming a compressively stressed metal layer over an insulating layer having previously formed openings therethrough to the material under the insulating layer; forming a high tensile strength cap layer of material over the compressively stressed metal layer; and then heating the structure to a temperature sufficient to cause the compressively stressed metal layer to extrude down into the openings in the underlying insulating layer. The overlying cap layer has sufficient tensile strength to prevent or inhibit the compressive stressed metal layer from extruding upwardly to form hillocks which would need to be removed, i.e., by planarization. The temperature to which the compressively stressed metal layer is subsequently heated to cause it to extrude should be less than the melting point of the compressively stressed metal layer.

摘要翻译： 描述了使用在绝缘层上形成的金属层作为填充材料填充绝缘层中的开口并且作为图案化的金属互连或线束在绝缘层的表面上的工艺和结果。 该方法包括以下步骤：在预先形成的开口的绝缘层上形成压电应力金属层到绝缘层下面的材料; 在压应力金属层上形成高抗拉强度的覆盖层; 然后将结构加热到足以使压应力金属层向下挤压到下面的绝缘层中的开口中的温度。 上覆盖层具有足够的拉伸强度，以防止或抑制压应力金属层向上挤出以形成需要去除的小丘，即通过平坦化。 压缩应力金属层随后加热使其挤出的温度应小于压应力金属层的熔点。

公开(公告)号：US5668055A

公开(公告)日：1997-09-16

申请号：US435774

申请日：1995-05-05

申请人： Zheng Xu ,  Tse-Yong Yao ,  Hoa Kieu ,  Julio Aranovich

发明人： Zheng Xu ,  Tse-Yong Yao ,  Hoa Kieu ,  Julio Aranovich

IPC分类号： H01L21/28 ,  H01L21/768 ,  H01L23/532 ,  H01L21/44

CPC分类号： H01L23/53223 ,  H01L21/76877 ,  H01L2924/0002

摘要： A process and resulting structure are described for using a metal layer formed over an insulating layer as both the filler material to fill openings in the insulating layer and as the patterned metal interconnect or wiring harness on the surface of the insulating layer. The process includes the steps of forming a compressively stressed metal layer over an insulating layer having previously formed openings therethrough to the material under the insulating layer; forming a high tensile strength cap layer of material over the compressively stressed metal layer; and then heating the structure to a temperature sufficient to cause the compressively stressed metal layer to extrude down into the openings in the underlying insulating layer. The overlying cap layer has sufficient tensile strength to prevent or inhibit the compressive stressed metal layer from extruding upwardly to form hillocks which would need to be removed, i.e., by planarization. The temperature to which the compressively stressed metal layer is subsequently heated to cause it to extrude should be less than the melting point of the compressively stressed metal layer.

摘要翻译： 描述了使用在绝缘层上形成的金属层作为填充材料填充绝缘层中的开口并且作为图案化的金属互连或线束在绝缘层的表面上的工艺和结果。 该方法包括以下步骤：在预先形成的开口的绝缘层上形成压电应力金属层到绝缘层下面的材料; 在压应力金属层上形成高抗拉强度的覆盖层; 然后将结构加热到足以使压应力金属层向下挤压到下面的绝缘层中的开口中的温度。 上覆盖层具有足够的拉伸强度，以防止或抑制压应力金属层向上挤出以形成需要去除的小丘，即通过平坦化。 压缩应力金属层随后加热使其挤出的温度应小于压应力金属层的熔点。

公开(公告)号：US09390970B2

公开(公告)日：2016-07-12

申请号：US11733671

申请日：2007-04-10

申请人： Tony Chiang ,  Gongda Yao ,  Peijun Ding ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara ,  Zheng Xu ,  Hong Zhang

发明人： Tony Chiang ,  Gongda Yao ,  Peijun Ding ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara ,  Zheng Xu ,  Hong Zhang

IPC分类号： H01L21/768 ,  C23C14/04 ,  C23C14/16 ,  H01L21/285

CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/165 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76883

摘要： We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by impacting ions of a depositing layer, A first protective layer of material is deposited on a substrate surface using traditional sputtering or ion deposition sputtering, in combination with sufficiently low substrate bias that a surface onto which the layer is applied is not eroded away or contaminated during deposition of the protective layer. Subsequently, a sculptured second layer of material is applied using ion deposition sputtering at an increased substrate bias, to sculpture a shape from a portion of the first protective layer of material and the second layer of depositing material. The method is particularly applicable to the sculpturing of barrier layers, wetting layers, and conductive layers upon semiconductor feature surfaces.

摘要翻译： 我们公开了使用离子沉积溅射在半导体特征表面上施加雕刻层的材料的方法，其中施加有雕刻层的表面被保护以通过冲击沉积层的离子来抵抗侵蚀和污染。第一保护层 的材料通过传统的溅射或离子沉积溅射沉积在衬底表面上，结合足够低的衬底偏压，其中施加了该层的表面在保护层沉积期间不被腐蚀掉或被污染。 随后，使用离子沉积溅射在增加的衬底偏压下施加雕刻的第二材料层，以从材料的第一保护层的一部分和第二沉积材料层的一部分雕刻出形状。 该方法特别适用于在半导体特征表面上雕刻阻挡层，润湿层和导电层。

公开(公告)号：US09214576B2

公开(公告)日：2015-12-15

申请号：US13155112

申请日：2011-06-07

申请人： Jianming Fu ,  Zheng Xu ,  Jiunn Benjamin Heng ,  Chentao Yu

发明人： Jianming Fu ,  Zheng Xu ,  Jiunn Benjamin Heng ,  Chentao Yu

IPC分类号： H01L31/0224 ,  H01L31/0216 ,  H01L31/072 ,  H01L31/075 ,  H01L31/18

CPC分类号： H01L31/074 ,  H01L31/02167 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/072 ,  H01L31/075 ,  H01L31/1804 ,  H01L31/1868 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： One embodiment of the present invention provides a solar cell. The solar cell includes a Si base layer, a passivation layer situated above the Si base layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a first transparent-conducting-oxide (TCO) layer situated above the heavily doped a-Si layer, a back-side electrode situated below the Si base layer, and a front-side electrode situated above the first TCO layer. The first TCO layer comprises at least one of: GaInO, GaInSnO, ZnInO, and ZnInSnO.

摘要翻译： 本发明的一个实施例提供一种太阳能电池。 太阳能电池包括Si基底层，位于Si基底层之上的钝化层，位于钝化层上方的重掺杂非晶硅层（a-Si）层，位于上面的第一透明导电氧化物（TCO）层 重掺杂的a-Si层，位于Si基底层下方的背面电极和位于第一TCO层上方的前侧电极。 第一TCO层包括GaInO，GaInSnO，ZnInO和ZnInSnO中的至少一种。

公开(公告)号：US09197514B2

公开(公告)日：2015-11-24

申请号：US12752028

申请日：2010-03-31

申请人： Yuri Finkelstein ,  Kumar Rethinakaleeswaran ,  John Helm ,  Zheng Xu

发明人： Yuri Finkelstein ,  Kumar Rethinakaleeswaran ,  John Helm ,  Zheng Xu

IPC分类号： H04L12/24 ,  G06F17/30

CPC分类号： H04L41/5025 ,  G06F17/30286 ,  H04L41/5009 ,  H04L41/5074 ,  H04L41/5096 ,  H04L47/74 ,  H04L67/1097 ,  H04L67/20

摘要： A method and a system implementing a service level agreement based storage access system. A service level agreement based storage access system presents a single interface for data storage consumers and translates generic data operation requests to data operation request specific to a storage server. The SLA based storage access system also monitors storage server performance and may throttle processes to ensure service level agreements are not violated.

摘要翻译： 一种实现基于服务水平协议的存储访问系统的方法和系统。 基于服务级别协议的存储访问系统为数据存储用户提供单一接口，并将通用数据操作请求转换为特定于存储服务器的数据操作请求。 基于SLA的存储访问系统还可以监视存储服务器的性能，并且可以调节进程以确保不违反服务级别协议。

公开(公告)号：US20150277972A1

公开(公告)日：2015-10-01

申请号：US14231784

申请日：2014-04-01

申请人： Zheng Xu ,  Tommi M. Jokinen ,  William C. Moyer

发明人： Zheng Xu ,  Tommi M. Jokinen ,  William C. Moyer

IPC分类号： G06F9/48

CPC分类号： G06F9/4843 ,  G06F9/461 ,  G06F9/48

摘要： A data processing system includes a processor core and ordering scope manager circuitry. The processor core sends an indication of a first ordering scope identifier for a current ordering scope a task currently being executed by the processor core and a second ordering scope identifier for a next-in-order ordering scope of the task. The ordering scope manager receives the indication the first and second ordering scope identifiers from processor core, and, provides a no task switch indicator to the processor core in response to determining that the first task is a first-in-transition-order task for the first ordering scope identifier and that processor core is authorized to execute the next-in-order ordering scope. The processor core transitions from executing in the current ordering scope to executing in the next-in-order ordering scope without performing task switch in response to the no task switch indicator being provided.

摘要翻译： 数据处理系统包括处理器核心和订购范围管理器电路。 处理器核心向当前订购范围发送当前由处理器核心执行的任务的第一订购范围标识符和用于任务的下一个订购范围的第二订购范围标识符的指示。 订购范围管理器从处理器核心接收第一和第二订购范围标识符的指示，并且响应于确定第一任务是第一个转换顺序任务，向处理器核心提供无任务切换指示符 第一个订购范围标识符，该处理器核心被授权执行下一个订购范围。 处理器核心从当前订购范围内的执行转变为按顺序排序范围执行，而不响应于提供无任务切换指示器而执行任务切换。