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    JANUS COMPLEMENTARY MEMS TRANSISTORS AND CIRCUITS
    72.
    发明申请
    JANUS COMPLEMENTARY MEMS TRANSISTORS AND CIRCUITS 有权
    JANUS补充MEMS晶体管和电路

    公开(公告)号：US20150014755A1

    公开(公告)日：2015-01-15

    申请号：US13940568

    申请日：2013-07-12

    Applicant: International Business Machines Corporation

    Inventor： Qing Cao ,  Zhengwen Li ,  Fei Liu ,  Zhen Zhang

    IPC: H01L27/092 ,  H01L21/8238

    CPC classification number: H01L27/092 ,  B82Y30/00 ,  H01L21/823814 ,  H01L29/68 ,  H01L29/86 ,  H01L49/00

    Abstract: A method of fabricating an electromechanical device includes the following steps. A first and a second back gate are formed over a substrate. An etch stop layer is formed covering the first and second back gates. Electrodes are formed over the first and second back gates, wherein the electrodes include one or more gate, source, and drain electrodes, wherein gaps are present between the source and drain electrodes. One or more Janus components are placed the gaps, each of which includes a first portion having an electrically conductive material and a second portion having an electrically insulating material, and wherein i) the first or second portion of the Janus components placed in a first one of the gaps has a fixed positive surface charge and ii) the first or second portion of the Janus components placed in a second one of the gaps has a fixed negative surface charge.

    Abstract translation: 一种制造机电装置的方法包括以下步骤。 第一和第二后栅极形成在衬底上。 形成覆盖第一和第二后门的蚀刻停止层。 电极形成在第一和第二后栅极之上，其中电极包括一个或多个栅极，源极和漏极，其中在源极和漏极之间存在间隙。 一个或多个Janus部件被放置在间隙中，每个部件包括具有导电材料的第一部分和具有电绝缘材料的第二部分，并且其中i）放置在第一部分中的Janus部件的第一部分或第二部分 的间隙具有固定的正表面电荷，以及ii）放置在第二个间隙中的Janus部件的第一或第二部分具有固定的负表面电荷。

    Techniques for Fabricating Janus Sensors
    74.
    发明申请
    Techniques for Fabricating Janus Sensors 有权
    制造Janus传感器的技术

    公开(公告)号：US20140326047A1

    公开(公告)日：2014-11-06

    申请号：US14010945

    申请日：2013-08-27

    Applicant: International Business Machines Corporation

    Inventor： Qing Cao ,  Kangguo Cheng ,  Zhengwen Li ,  Fei Liu ,  Zhen Zhang

    IPC: G01N33/00

    CPC classification number: H01H29/02 ,  G01N15/1031 ,  G01N27/3278 ,  G01N27/404 ,  G01N27/44795 ,  G01N33/0009 ,  Y10T29/49117

    Abstract: Electromechanical sensors that employ Janus micro/nano-components and techniques for the fabrication thereof are provided. In one aspect, a method of fabricating an electromechanical sensor includes the following steps. A back gate is formed on a substrate. A gate dielectric is deposited over the back gate. An intermediate layer is formed on the back gate having a micro-fluidic channel formed therein. Top electrodes are formed above the micro-fluidic channel. One or more Janus components are placed in the micro-fluidic channel, wherein each of the Janus components has a first portion having an electrically conductive material and a second portion having an electrically insulating material. The micro-fluidic channel is filled with a fluid. The electrically insulating material has a negative surface charge at a pH of the fluid and an isoelectric point at a pH less than the pH of the fluid.

    Abstract translation: 提供采用Janus微/纳米组件的机电传感器及其制造技术。 一方面，制造机电传感器的方法包括以下步骤。 在基板上形成背栅。 栅极电介质沉积在背栅上。 中间层形成在背栅上，其中形成有微流体通道。 顶部电极形成在微流体通道上方。 一个或多个Janus部件被放置在微流体通道中，其中Janus部件中的每一个具有具有导电材料的第一部分和具有电绝缘材料的第二部分。 微流体通道充满流体。 电绝缘材料在流体的pH下具有负的表面电荷，并且在pH小于流体的pH的pH下具有等电点。

    CARBON-DOPED CAP FOR A RAISED ACTIVE SEMICONDUCTOR REGION
    75.
    发明申请
    CARBON-DOPED CAP FOR A RAISED ACTIVE SEMICONDUCTOR REGION 有权
    用于增加主动半导体区域的碳掺量

    公开(公告)号：US20140264482A1

    公开(公告)日：2014-09-18

    申请号：US13802986

    申请日：2013-03-14

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Zhengwen Li ,  Qing Cao ,  Kangguo Cheng ,  Fei Liu ,  Zhen Zhang

    IPC: H01L29/78 ,  H01L29/66

    CPC classification number: H01L29/66795 ,  H01L21/02532 ,  H01L21/02636 ,  H01L21/28518 ,  H01L21/31116 ,  H01L21/76805 ,  H01L21/76816 ,  H01L21/76855 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/82385 ,  H01L21/823871 ,  H01L21/84 ,  H01L21/845 ,  H01L27/1203 ,  H01L27/1211 ,  H01L29/0847 ,  H01L29/458 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66628

    Abstract: After formation of a disposable gate structure, a raised active semiconductor region includes a vertical stack, from bottom to top, of an electrical-dopant-doped semiconductor material portion and a carbon-doped semiconductor material portion. A planarization dielectric layer is deposited over the raised active semiconductor region, and the disposable gate structure is replaced with a replacement gate structure. A contact via cavity is formed through the planarization dielectric material layer by an anisotropic etch process that employs a fluorocarbon gas as an etchant. The carbon in the carbon-doped semiconductor material portion retards the anisotropic etch process, and the carbon-doped semiconductor material portion functions as a stopping layer for the anisotropic etch process, thereby making the depth of the contact via cavity less dependent on variations on the thickness of the planarization dielectric layer or pattern factors.

    Abstract translation: 在形成一次性栅极结构之后，凸起的有源半导体区域包括从掺杂剂掺杂的半导体材料部分和碳掺杂半导体材料部分的从底部到顶部的垂直堆叠。 在凸起的有源半导体区域上沉积平坦化电介质层，并且用替代栅极结构替换一次性栅极结构。 通过使用氟碳气体作为蚀刻剂的各向异性蚀刻工艺，通过平坦化介电材料层形成接触孔。 碳掺杂半导体材料部分中的碳延迟了各向异性蚀刻工艺，并且碳掺杂半导体材料部分用作用于各向异性蚀刻工艺的停止层，从而使接触孔的深度较小地依赖于 平坦化介电层的厚度或图案因素。

    Controlled drug delivery in point-of-care drug delivery system based on real-time monitoring with integrated sensor
    77.
    发明授权
    Controlled drug delivery in point-of-care drug delivery system based on real-time monitoring with integrated sensor 有权

    公开(公告)号：US11202860B2

    公开(公告)日：2021-12-21

    申请号：US16001391

    申请日：2018-06-06

    Applicant: International Business Machines Corporation

    Inventor： Qing Cao ,  Shu-Jen Han ,  Jianshi Tang ,  Bharat Kumar

    IPC: A61M5/168 ,  A61M5/172 ,  A61B5/00

    Abstract: A drug delivery system includes a substrate, an integrated sensor disposed on the substrate, a drug delivery element disposed on the substrate, and a control unit coupled to the integrated sensor and the drug delivery element. The integrated sensor includes first and second electrodes disposed on a first surface of the substrate. The drug delivery element includes a reservoir disposed on the first surface of the substrate, a thermally active polymer enclosing the reservoir, and a heating coil disposed over the thermally active polymer. The control unit is configured to measure a biological parameter by measuring a voltage difference between the first and second electrodes of the integrated sensor, and to apply a trigger signal to the heating coil of the drug delivery element responsive to the measured biological parameter indicating a designated condition to heat up the thermally active polymer to selectively release a drug from the reservoir.

    Sensors based on negative capacitance field effect transistors
    80.
    发明授权
    Sensors based on negative capacitance field effect transistors 有权

    公开(公告)号：US10962497B2

    公开(公告)日：2021-03-30

    申请号：US15846857

    申请日：2017-12-19

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Qing Cao ,  Jianshi Tang ,  Ning Li ,  Ying He

    IPC: G01N27/414 ,  G01N27/22 ,  G01N31/22 ,  G11C11/22

    Abstract: Chemical sensors and methods of forming and making the same include a semiconductor substrate having an input terminal and an output terminal. A negative capacitance structure is positioned on the semiconductor substrate and is configured to control a current passing from the input terminal to the output terminal. A functionalized electrode is in electrical contact with the negative capacitance structure and is configured to change surface potential in the presence of an analyte, such that a phase change in the negative capacitance structure is triggered when the surface potential exceeds a threshold.

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