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139 条记录 (耗时 0.044 秒)

    Double gated transistor
    72.
    发明授权
    Double gated transistor 有权
    双门控晶体管

    公开(公告)号：US06503784B1

    公开(公告)日：2003-01-07

    申请号：US09670742

    申请日：2000-09-27

    申请人： Gerhard Enders ,  Thomas Schulz ,  Dietrich Widmann ,  Lothar Risch

    发明人： Gerhard Enders ,  Thomas Schulz ,  Dietrich Widmann ,  Lothar Risch

    IPC分类号： H01L218238

    CPC分类号： H01L27/11 ,  H01L21/823885 ,  H01L27/092 ,  H01L27/1104 ,  H01L27/1203

    摘要： A semiconductor body-having a pair of vertical, double-gated CMOS transistors. An insulating layer extending horizontally beneath the surface of the semiconductor body such insulating layer being disposed beneath the pair of transistors. The transistors, together with additional such transistors, are arranged to form a Synchronous Dynamic Random Access Memory (SRAM) array. The array includes a plurality of SRAM cells arranged in rows and columns, each one of the cells having a WORDLINE connected to a WORLDINE CONTACT. The WORDLINE CONTACT is common to four contiguous one of the cells. One of the cells having a plurality of electrically interconnected MOS transistors arranged to provide an SRAM circuit. Each one of the cells has a VDD CONTACT and a VSS CONTACT. One of such CONTACTs is disposed centrally within each one of the cells and the other one of the CONTACTs being common to four contiguous ones of the cells. Each one of the cells has the common one of the CONTACTs and the WORDLINE CONTACT disposed at peripheral, corner regions of the cell.

    摘要翻译： 一种具有一对垂直双门控CMOS晶体管的半导体体。 在半导体本体的表面下水平延伸的绝缘层，该绝缘层设置在该对晶体管的下方。 晶体管与附加的这种晶体管一起被布置成形成同步动态随机存取存储器（SRAM）阵列。 阵列包括以行和列排列的多个SRAM单元，每个单元都具有连接到WORLDINE CONTACT的WORDLINE。 WORDLINE CONTACT是四个连续的一个单元格共同的。 具有多个电互连的MOS晶体管的单元之一被布置成提供SRAM电路。 每个单元都有一个VDD CONTACT和一个VSS CONTACT。 这种CONTACT之一被布置在每个单元格的中心并且另一个CONTACT被四个相邻的单元共同。 每个单元格具有共同的一个CONTACT和WORDLINE CONTACT放置在单元的外围角区域。

    Static random access memory (SRAM)
    73.
    发明授权
    Static random access memory (SRAM) 有权
    静态随机存取存储器（SRAM）

    公开(公告)号：US06472767B1

    公开(公告)日：2002-10-29

    申请号：US09302757

    申请日：1999-04-30

    申请人： Gerhard Enders ,  Thomas Schulz ,  Dietrich Widmann ,  Lothar Risch

    发明人： Gerhard Enders ,  Thomas Schulz ,  Dietrich Widmann ,  Lothar Risch

    IPC分类号： H01L2711

    CPC分类号： H01L27/11 ,  H01L27/1104

    摘要： A semiconductor body having a pair of vertical, double-gated CMOS transistors. An insulating layer extending horizontally beneath the surface of the semiconductor body such insulating layer being disposed beneath the pair of transistors. The transistors, together with additional such transistors, are arranged to form a Synchronous Dynamic Random Access Memory (SRAM) array. The array includes a plurality of SRAM cells arranged in rows and columns, each one of the cells having a WORDLINE connected to a WORLDINE CONTACT. The WORDLINE CONTACT is common to four contiguous one of the cells. One of the cells having a plurality of electrically interconnected MOS transistors arranged to provide an SRAM circuit. Each one of the cells has a VDD CONTACT and a VSS CONTACT. One of such CONTACTs is disposed centrally within each one of the cells and the other one of the CONTACTs being common to four contiguous ones of the cells. Each one of the cells has the common one of the CONTACTs and the WORDLINE CONTACT disposed at peripheral, corner regions of the cell.

    摘要翻译： 具有一对垂直双门控CMOS晶体管的半导体本体。 在半导体本体的表面下水平延伸的绝缘层，该绝缘层设置在该对晶体管的下方。 晶体管与附加的这种晶体管一起被布置成形成同步动态随机存取存储器（SRAM）阵列。 阵列包括以行和列排列的多个SRAM单元，每个单元都具有连接到WORLDINE CONTACT的WORDLINE。 WORDLINE CONTACT是四个连续的一个单元格共同的。 具有多个电互连的MOS晶体管的单元之一被布置成提供SRAM电路。 每个单元都有一个VDD CONTACT和一个VSS CONTACT。 这种CONTACT之一被布置在每个单元格的中心并且另一个CONTACT被四个相邻的单元共同。 每个单元格具有共同的一个CONTACT和WORDLINE CONTACT放置在单元的外围角区域。

    SRAM cell configuration and method for its fabrication
    74.
    发明授权
    SRAM cell configuration and method for its fabrication 有权
    SRAM单元配置及其制造方法

    公开(公告)号：US6038164A

    公开(公告)日：2000-03-14

    申请号：US200071

    申请日：1998-11-25

    申请人： Thomas Schulz ,  Thomas Aeugle ,  Wolfgang Rosner ,  Lothar Risch

    发明人： Thomas Schulz ,  Thomas Aeugle ,  Wolfgang Rosner ,  Lothar Risch

    IPC分类号： H01L21/8244 ,  H01L27/11 ,  G11C11/00

    CPC分类号： H01L27/11 ,  H01L27/1104

    摘要： The SRAM cell configuration has at least six transistors in each memory cell. Four of the transistors form a flip-flop and they are arranged at the corners of a quadrilateral. The flip-flop is driven by two of the transistors, which are disposed so as to adjoin diagonally opposite corners of the quadrilateral and outside the quadrilateral. Adjacent memory cells along a word line can be arranged in such a way that a first bit line and a second bit line of the adjacent memory cells coincide. The transistors are preferably vertical and are arranged at semiconductor structures (St1, St2, St3, St4, St5, St6) produced from a layer sequence. Two of the transistors having n-doped channel regions are preferably formed in each case on two semiconductor structures.

    摘要翻译： SRAM单元配置在每个存储单元中具有至少六个晶体管。 四个晶体管形成触发器，并且它们被布置在四边形的角部。 触发器由两个晶体管驱动，这些晶体管被设置为邻接四边形的对角线相对的角部并且在四边形之外。 沿着字线的相邻存储器单元可以以相邻存储器单元的第一位线和第二位线重合的方式布置。 晶体管优选是垂直的，并且被布置在从层序列产生的半导体结构（St1，St2，St3，St4，St5，St6）处。 在每种情况下，优选在两个半导体结构上形成具有n掺杂沟道区的两个晶体管。

    METHOD FOR THE CONTROLLED OPERATION OF AN INDUSTRIAL OVEN WHICH IS HEATED IN A REGENERATIVE MANNER, CONTROL DEVICE, AND INDUSTRIAL OVEN
    79.
    发明申请
    METHOD FOR THE CONTROLLED OPERATION OF AN INDUSTRIAL OVEN WHICH IS HEATED IN A REGENERATIVE MANNER, CONTROL DEVICE, AND INDUSTRIAL OVEN 有权
    在再生管道，控制装置和工业炉中加热的工业用烤箱的控制方法

    公开(公告)号：US20140011148A1

    公开(公告)日：2014-01-09

    申请号：US13825281

    申请日：2011-09-21

    申请人： Peter Hemmann ,  Andreas Birle ,  Thomas Schulz ,  Helmut Heelemann

    发明人： Peter Hemmann ,  Andreas Birle ,  Thomas Schulz ,  Helmut Heelemann

    IPC分类号： C03B5/237 ,  F23N5/00 ,  C03B5/24

    CPC分类号： C03B5/237 ,  C03B5/235 ,  C03B5/24 ,  F23L15/02 ,  F23N3/002 ,  F23N5/003 ,  F23N5/006 ,  F23N5/203 ,  F23N5/242 ,  F23N2021/08 ,  F23N2023/36 ,  Y02E20/348 ,  Y02P40/535

    摘要： The invention relates to a method for the controlled operation of an industrial oven which is heated in a regenerative manner and which comprises an oven chamber, in particular a melting tank, in particular for glass, having the following steps: injecting fuel into the oven chamber via at least one fuel injector, which is designed to inject fuel, practically without combustion air in particular, conducting combustion air to the oven chamber in a first period duration and conducting exhaust gas (AG) out of the oven chamber in a second period duration separately from the fuel in a periodically alternating manner by means of a left regenerator and right regenerator which are associated with the at least one fuel injector and which are designed to regeneratively store heat from the exhaust gas and transmit heat to the combustion air. A supply of the combustion air is automatically controlled by means of a control loop. The control loop takes into account an excess air coefficient that is specified in the method as well as the location of the entrance of the excess air upstream, in, or downstream of the air-side regenerator. A corresponding control device and an industrial oven which comprises such a control device and which is heated in a regenerative manner are likewise claimed.

    摘要翻译： 本发明涉及一种以再生方式加热的工业烤箱的受控操作方法，该方法包括一个烘箱，特别是一个熔池，特别是玻璃，具有以下步骤：将燃料喷入烘箱室 通过至少一个燃料喷射器，其被设计成实际上没有燃烧空气喷射燃料，特别是在第一周期期间内将燃烧空气传导到烘箱室，并且在第二周期期间内将废气（AG）引导出烘箱室 通过与所述至少一个燃料喷射器相关联的左再生器和右再生器以周期性交替的方式与所述燃料分开，并且被设计成再生地存储来自所述废气的热并将热量传递到所述燃烧空气。 燃烧空气的供应通过控制回路自动控制。 控制回路考虑了方法中规定的过量空气系数以及空气侧再生器上游，下游或下游的过量空气的入口位置。 同样要求保护包括这种控制装置并且以再生方式被加热的相应的控制装置和工业烤箱。