摘要:
An optical element is provided that includes a base substrate, a waveguide substrate, and a thin film layer that is provided between the base substrate and the waveguide substrate and that has a single-layer structure of a multilayer structure including a film containing Ta2O5 or Nb2O5 as a principal component.
摘要翻译:提供了一种光学元件,其包括基底基板,波导基板和设置在基底基板和波导基板之间的薄膜层,并且具有包括包含Ta 2 O> 5或Nb 2 O 5 5作为主要成分。
摘要:
A light generating apparatus includes: a submount; a semiconductor laser chip mounted on the submount; a substrate which is mounted on the submount and includes an optical waveguide; and a substance having a predetermined thickness which is disposed between the semiconductor laser chip and the substrate. In an oscillation wavelength stabilizing apparatus for a light source, the light source is a semiconductor laser which includes: an active region for providing gain; and a distributed Bragg reflection (DBR) region for controlling an oscillation wavelength. The apparatus includes a control section which monotonously varies, in a first direction, a DBR current to be input to the DBR region while detecting the oscillation wavelength of an output light of the semiconductor laser so as to detect a DBR current value Io corresponding to a predetermined wavelength value, and then monotonously varies the DBR current in a second direction which is opposite the first direction beyond the detected value Io, and then monotonously varies the DBR current in the first direction again to set the DBR current at the detected value Io, thereby fixing the oscillation wavelength of the semiconductor laser chip at the predetermined wavelength value.
摘要:
When a wavelength of a first laser beam with which a first recording medium including a first recording layer is recorded and reproduced is indicated as λ1 (nm), a wavelength of a second laser beam with which a second recording medium including a second recording layer is recorded and reproduced as λ2 (nm), the relationship between the wavelength λ1 and the wavelength λ2 is set to be expressed by 10≦|λ1−λ2|≦120. The first recording layer has a light absorptance ratio of at least 1.0 with respect to the wavelength λ1. The light transmittance of the first recording medium with respect to the wavelength λ2 is set to be at least 30 in both the cases where the recording layer is in a crystal state and in an amorphous state. In order to record and reproduce the optical multilayer disk with the above-mentioned characteristics, a multiwavelength light source with the following configuration is used. Wavelengths of fundamental waves with different wavelengths from injection parts formed at one end of a plurality of optical waveguides, which satisfy phase matching conditions different from one another and are formed in the vicinity of the surface of a substrate, are converted simultaneously, and the first and second laser beams are emitted from emission parts formed at substantially the same position at the other end of the optical waveguides. This enables an optimum optical system for high density recording and reproduction to be obtained.
摘要:
After forming domain inverted layers 3 in an LiTaO3 substrate 1, an optical waveguide is formed. By performing low-temperature annealing for the optical wavelength conversion element thus formed, a stable proton exchange layer 8 is formed, where an increase in refractive index generated during high-temperature annealing is lowered, thereby providing a stable optical wavelength conversion element. Thus, the phase-matched wavelength becomes constant, and variation in harmonic wave output is eliminated. Consequently, with respect to an optical wavelength conversion element utilizing a non-linear optical effect, a highly reliable element is provided.
摘要:
A wavelength-variable semiconductor laser includes: a submount; and a semiconductor laser chip being mounted onto the submount and having at least an active layer region and a distributed Bragg reflection region, wherein the semiconductor laser chip is mounted onto the submount in such a manner that an epitaxial growth surface thereof faces the submount and a heat transfer condition of the active layer region is different from a heat transfer condition of the distributed Bragg reflection region. Moreover, an optical integrated device includes at least a semiconductor laser and an optical waveguide device both mounted on a submount, wherein the semiconductor laser is the wavelength-variable semiconductor laser as set forth above.
摘要:
An optical wavelength converting device is provided with a LiTaO.sub.3 substrate, a plurality of inverted-polarization layers periodically arranged in an upper surface of the LiTaO.sub.3 substrate, and an optical waveguide crossing the inverted-polarization layers. The upper surface of the LiTaO.sub.3 substrate is directed toward a -X-crystal axis direction. The inverted-polarization layers are formed by exchanging Ta.sup.+ ions of the LiTaO.sub.3 substrate for H.sup.+ ions, and an extending direction of each inverted-polarization layer is inclined at an angle of .theta. degrees (6.ltoreq..theta..ltoreq.174) to the +C-crystal axis direction toward a -Y-crystal axis direction. The optical waveguide is formed by exchanging Ta.sup.+ ions of the LiTaO.sub.3 substrate and the inverted-polarization layers for H.sup.+ ions to set a refractive index of the optical waveguide higher than that of the LiTaO.sub.3 substrate. The optical waveguide extends in a +Y-crystal axis direction. Fundamental waves polarized in a transverse electric mode induce electric field directed in .+-.Y-crystal axis directions and are converted into second harmonic waves in the optical waveguide.
摘要:
The wavelength tolerance of a frequency doubler is enhanced so as to perform stable operation. Further, with the use of this frequency doubler, a laser source can directly modulate a laser. A waveguide and a periodic domain inverted layer are formed on an LiTaO.sub.3 substrate of -C plate, and the waveguide is divided into a plurality of zones having different propagation constants. A fundamental wave inputted in the waveguide is converted into a harmonic wave in each of the zones, and is emitted as SHG light. Parts for modulating the phases of the harmonic waves produced in the respective zones are provided between the zones.
摘要:
A short-wavelength light generating apparatus comprising a pumping semiconductor laser and an intra-cavity solid state laser, the intra-cavity solid state laser is excited in response to a laser light beam from the semiconductor laser to generate a short-wavelength light beam to an external. Also included in the apparatus is an external grating mirror having on its one surface a reflection type diffraction grating and placed between the semiconductor laser and the intra-cavity solid state laser. The external grating mirror reflects the laser light beam from the semiconductor laser to feedback a portion of the laser light beam to said semiconductor laser so that an oscillated wavelength of the semiconductor laser becomes within a wavelength acceptance of the intra-cavity solid state laser. Further, the external grating mirror supplies a portion of the laser light beam from the semiconductor laser to the intra-cavity solid state laser. This arrangement can output a stable harmonic wave with a high efficiency.
摘要:
A wavelength conversion laser is provided with a solid-state laser having a cavity, and a wavelength converting element arranged within the cavity. The solid-state laser includes two or more types of laser crystals and oscillates solid-state laser light of multiple wavelengths. The wavelength converting element converts the solid-state laser light of multiple wavelengths into light of second harmonic waves and sum-frequency wave of multiple wavelengths and simultaneously generates the second harmonic waves and sum-frequency wave of multiple wavelengths. The wavelength conversion laser outputs converted wavelength light having a broad spectral width and low coherency, thereby enabling it to carry out highly efficient and stable high-output oscillation.
摘要:
A laser light source is provided with a pump light source (1) comprising a semiconductor laser, a solid laser medium (2) which is excited by the semiconductor laser, and multi-mode means for changing at least either a longitudinal mode or a transverse mode of laser oscillation of the solid laser. The oscillation light of the laser medium excited by the light outputted from the pump light source is changed by the multi-mode means into output light (5) having a plurality of oscillation spectra and is outputted, thereby a small, high power, and highly efficient low coherent light source can be realized, and a laser light source having reduced speckle noises can be provided.