公开(公告)号：US06863593B1

公开(公告)日：2005-03-08

申请号：US09184805

申请日：1998-11-02

申请人： Raymond R. Jin ,  Shijian Li ,  Fred C. Redeker ,  Thomas H. Osterheld

发明人： Raymond R. Jin ,  Shijian Li ,  Fred C. Redeker ,  Thomas H. Osterheld

IPC分类号： B24B37/04 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/768 ,  B24C1/08

CPC分类号： H01L21/76819 ,  B24B37/04 ,  B24B37/042 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/7684

摘要： A substrate is chemical mechanical polished with a high-selectivity slurry until the stop layer is at least partially exposed, and then the substrate is polished with a low-selectivity slurry until the stop layer is completely exposed.

摘要翻译： 将基材用高选择性浆料进行化学机械抛光，直至止挡层至少部分暴露，然后用低选择性浆料抛光基材直到停止层完全暴露。

公开(公告)号：US06858265B2

公开(公告)日：2005-02-22

申请号：US10370028

申请日：2003-02-18

申请人： Fred C. Redeker ,  Robert Steger ,  Shijian Li

发明人： Fred C. Redeker ,  Robert Steger ,  Shijian Li

IPC分类号： B23Q3/15 ,  C23C16/44 ,  C23C16/458 ,  H01L21/3065 ,  H01L21/683 ,  H02N13/00 ,  B05D3/02 ,  B05D3/04 ,  C23C16/00

CPC分类号： C23C16/4404 ,  C23C16/4586 ,  H01L21/6831

摘要： Method and apparatus for improving the reproducibility of chucking forces of an electrostatic chuck used in plasma enhanced CVD processing of substrates provides for precoating of the electrostatic chuck with a dielectric layer, such as SiO2, after every chamber cleaning process. The uniform and tightly bonded dielectric layer deposited on the electrostatic chuck eliminates the need for a cover wafer over the chuck surface during the chamber cleaning and provides for more reliable gripping of wafers.

摘要翻译： 用于提高基板等离子体增强CVD处理中的静电卡盘的夹持力的再现性的方法和装置提供了在每个室清洁处理之后静电卡盘与诸如SiO 2之类的介电层的预涂层。 沉积在静电卡盘上的均匀且紧密结合的电介质层消除了在腔室清洁期间在卡盘表面上的覆盖晶片的需要，并且提供更可靠的夹持晶片。

公开(公告)号：US06796880B2

公开(公告)日：2004-09-28

申请号：US10394599

申请日：2003-03-21

申请人： Fred C. Redeker ,  Manoocher Birang ,  Shijian Li ,  Sasson Somekh

发明人： Fred C. Redeker ,  Manoocher Birang ,  Shijian Li ,  Sasson Somekh

IPC分类号： B24B100

CPC分类号： B24B37/005 ,  B24B21/04 ,  B24B49/04 ,  B24B49/12 ,  H01L21/30625

摘要： A polishing article for chemical mechanical polishing. The polishing article includes a generally elongated polishing sheet with a polishing surface. The polishing article is formed from a material that is substantially opaque, and has a discrete region extending substantially the length of the polishing sheet that is at least semi-transparent.

摘要翻译： 用于化学机械抛光的抛光制品。 抛光制品包括具有抛光表面的大致细长的抛光片。 抛光制品由基本上不透明的材料形成，并且具有基本上延伸至少半透明的抛光片的长度的离散区域。

公开(公告)号：US06465051B1

公开(公告)日：2002-10-15

申请号：US08751899

申请日：1996-11-18

申请人： Turgut Sahin ,  Fred C. Redeker ,  Romuald Nowak ,  Shijian Li ,  Timothy Dyer ,  Derek R. Witty

发明人： Turgut Sahin ,  Fred C. Redeker ,  Romuald Nowak ,  Shijian Li ,  Timothy Dyer ,  Derek R. Witty

IPC分类号： H05H146

CPC分类号： H01J37/32862 ,  C23C16/4405 ,  H01J37/32082

摘要： The invention is embodied in a method of cleaning a plasma reactor by creating a vacuum in the chamber while introducing an etchant gas into the chamber through the gas injection ports, and applying RF energy to a ceiling electrode in the chamber while not necessarily applying RF energy to the coil antenna, so as to strike a predominantly capacitively coupled plasma in the vacuum chamber. In another embodiment the method includes, whenever the reactor is to be operated in an inductive coupling mode, applying RF power to the reactors coil antenna while grounding the ceiling electrode, and whenever the reactor is to be operated in a capacitive coupling mode, applying RF power to the ceiling electrode, and whenever the reactor is to be cleaned, cleaning the reactor by applying RF power to the ceiling electrode and to the coil antenna while introducing an etchant gas into the vacuum chamber. In yet another embodiment the method includes performing chemical vapor deposition on a wafer by introducing a deposition precursor gas into the chamber while maintaining an inductively coupled plasma therein by applying RF power to the coil antenna while grounding the ceiling electrode, and cleaning the reactor by introducing a precursor cleaning gas into the chamber while maintaining a capacitively coupled plasma in the chamber by applying RF power to the ceiling electrode.

摘要翻译： 本发明体现在一种通过在室中产生真空来清洁等离子体反应器的方法，同时通过气体注入口将蚀刻剂气体引入室中，并且将RF能量施加到室中的顶板电极，而不一定施加RF能量 到线圈天线，以便在真空室中击穿主要电容耦合的等离子体。 在另一个实施例中，该方法包括：每当反应器以电感耦合模式工作时，在将天线电极接地的同时向反应器线圈天线施加RF功率，并且每当反应器以电容耦合模式工作时，施加RF 电源到天花板电极，并且每当要清洁反应堆时，通过向天花板电极和线圈天线施加RF功率来清洁反应器，同时将蚀刻剂气体引入真空室。 在另一个实施方案中，该方法包括通过将沉积前体气体引入室中，同时通过在将天线电极接地的同时向线圈天线施加RF功率来维持其中的电感耦合等离子体来执行化学气相沉积，并通过引入来清洁反应器 前体清洗气体进入室，同时通过向天花板电极施加RF功率来在室内维持电容耦合的等离子体。

公开(公告)号：US09752231B2

公开(公告)日：2017-09-05

申请号：US13469607

申请日：2012-05-11

申请人： Shijian Li

发明人： Shijian Li

IPC分类号： C23C18/16

CPC分类号： C23C18/1617 ,  C23C18/1683

摘要： One or more aspects of this invention pertain to fabrication of electronic devices. One aspect of the present invention is a system for electroless deposition of metal on a substrate. According to one or more embodiments of the present invention, the system comprises a main subsystem in combination with one or more subsystems for electroless deposition on a substrate. Another aspect of the present invention is a method of making an electronic device. According to one or more embodiments of the present invention, the method comprises one or more processes. Descriptions according to one or more embodiments of the system and the processes are presented.

公开(公告)号：US20110207307A1

公开(公告)日：2011-08-25

申请号：US13101843

申请日：2011-05-05

申请人： Shijian Li ,  Kartik Ramaswamy ,  Hiroji Hanawa ,  Seon-Mee Cho ,  Biagio Gallo ,  Dongwon Choi ,  Majeed A. Foad

发明人： Shijian Li ,  Kartik Ramaswamy ,  Hiroji Hanawa ,  Seon-Mee Cho ,  Biagio Gallo ,  Dongwon Choi ,  Majeed A. Foad

IPC分类号： H01L21/265

CPC分类号： H01J37/32412 ,  C23C14/48 ,  C23C14/564 ,  H01L21/2236

摘要： Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction.

摘要翻译： 在静电卡盘上采用非常高的RF偏置电压以获得必要的植入深度分布的等离子体浸没离子注入是通过在晶片引入之前首先在内部腔室表面上沉积部分导电的含硅调节层来进行的。

公开(公告)号：US20110143553A1

公开(公告)日：2011-06-16

申请号：US12965765

申请日：2010-12-10

申请人： Yaxin Wang ,  Shijian Li ,  Fritz Redeker ,  John Parks ,  Artur Kolics ,  Hyungsuk Alexander Yoon ,  Tarek Suwwan de Felipe ,  Mikhail Korolik

发明人： Yaxin Wang ,  Shijian Li ,  Fritz Redeker ,  John Parks ,  Artur Kolics ,  Hyungsuk Alexander Yoon ,  Tarek Suwwan de Felipe ,  Mikhail Korolik

IPC分类号： H01L21/469 ,  B05C3/02 ,  B05C11/00 ,  B05C11/02

CPC分类号： H01L21/288 ,  C23C18/1642 ,  C23C18/1689 ,  C23C18/1872 ,  H01L21/76849

摘要： Methods and systems for handling a substrate through processes including an integrated electroless deposition process includes processing a surface of the substrate in an electroless deposition module to deposit a layer over conductive features of the substrate using a deposition fluid. The surface of the substrate is then rinsed in the electroless deposition module with a rinsing fluid. The rinsing is controlled to prevent de-wetting of the surface so that a transfer film defined from the rinsing fluid remains coated over the surface of the substrate. The substrate is removed from the electroless deposition module while maintaining the transfer film over the surface of the substrate. The transfer film over the surface of the substrate prevents drying of the surface of the substrate so that the removing is wet. The substrate, once removed from the electroless deposition module, is moved into a post-deposition module while maintaining the transfer film over the surface of the substrate.

摘要翻译： 用于通过包括集成无电沉积工艺的工艺处理衬底的方法和系统包括在无电沉积模块中处理衬底的表面以使用沉积流体在衬底的导电特征上沉积层。 然后用清洗液在无电沉积模块中冲洗基材的表面。 控制冲洗以防止表面的脱湿，使得从冲洗流体限定的转印膜保持涂覆在基材的表面上。 将基底从无电沉积模块移除，同时将转印膜保持在衬底的表面上。 衬底表面上的转印膜防止了衬底表面的干燥，使得去除被弄湿。 一旦从无电镀沉积模块中取出的衬底被移动到后沉积模块中，同时将转印膜保持在衬底的表面上。

公开(公告)号：US20100216258A1

公开(公告)日：2010-08-26

申请号：US12777085

申请日：2010-05-10

申请人： Majeed A. Foad ,  Shijian Li

发明人： Majeed A. Foad ,  Shijian Li

IPC分类号： H01L21/66

CPC分类号： G01N21/68 ,  G01N21/59 ,  H01L21/26513 ,  H01L22/12 ,  H01L22/26

摘要： Embodiments of the invention generally provide methods for end point detection at predetermined dopant concentrations during plasma doping processes. In one embodiment, a method includes positioning a substrate within a process chamber, generating a plasma above the substrate and transmitting a light generated by the plasma through the substrate, wherein the light enters the topside and exits the backside of the substrate, and receiving the light by a sensor positioned below the substrate. The method further provides generating a signal proportional to the light received by the sensor, implanting the substrate with a dopant during a doping process, generating multiple light signals proportional to a decreasing amount of the light received by the sensor during the doping process, generating an end point signal proportional to the light received by the sensor once the substrate has a final dopant concentration, and ceasing the doping process.

摘要翻译： 本发明的实施方案通常提供了在等离子体掺杂过程期间以预定掺杂剂浓度进行终点检测的方法。 在一个实施例中，一种方法包括将衬底定位在处理室内，在衬底上方产生等离子体，并将由等离子体产生的光透射穿过衬底，其中光进入顶侧并离开衬底的背面，并接收 通过位于基板下方的传感器进行光照射。 该方法进一步提供产生与传感器接收的光成比例的信号，在掺杂过程期间用掺杂剂注入衬底，在掺杂过程期间产生与传感器接收的减少量的光成比例的多个光信号，产生 一旦衬底具有最终的掺杂剂浓度，终点信号与传感器接收的光成比例，并停止掺杂过程。

公开(公告)号：US07749893B2

公开(公告)日：2010-07-06

申请号：US11641361

申请日：2006-12-18

申请人： Fritz Redeker ,  John Boyd ,  Yezdi Dordi ,  Hyungsuk Alexander Yoon ,  Shijian Li

发明人： Fritz Redeker ,  John Boyd ,  Yezdi Dordi ,  Hyungsuk Alexander Yoon ,  Shijian Li

IPC分类号： H01L21/4763

CPC分类号： C25D7/123 ,  C23C18/1653 ,  C23C28/023 ,  C23C28/322 ,  C23C28/34 ,  C23C28/341 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to methods and systems for the metallization of semiconductor devices. One aspect of the present invention is a method of depositing a copper layer onto a barrier layer so as to produce a substantially oxygen free interface therebetween. In one embodiment, the method includes providing a substantially oxide free surface of the barrier layer. The method also includes depositing an amount of atomic layer deposition (ALD) copper on the oxide free surface of the barrier layer effective to prevent oxidation of the barrier layer. The method further includes depositing a gapfill copper layer over the ALD copper. Another aspect of the present invention is a system for depositing a copper layer onto barrier layer so as to produce a substantially oxygen-free interface therebetween. In one embodiment, the integrated system includes at least one barrier deposition module. The system also includes an ALD copper deposition module configured to deposit copper by atomic layer deposition. The system further includes a copper gapfill module and at least one transfer module coupled to the at least one barrier deposition module and to the ALD copper deposition module. The transfer module is configured so that the substrate can be transferred between the modules substantially without exposure to an oxide-forming environment.

摘要翻译： 本发明涉及用于半导体器件金属化的方法和系统。 本发明的一个方面是将铜层沉积在阻挡层上以在其间产生基本上无氧的界面的方法。 在一个实施例中，该方法包括提供阻挡层的基本上无氧化物的表面。 该方法还包括在阻挡层的无氧化物表面上沉积一定量的原子层沉积（ALD）铜，以有效地防止阻挡层的氧化。 该方法还包括在ALD铜上沉积间隙填充铜层。 本发明的另一方面是一种用于在阻挡层上沉积铜层以在其间产生基本上无氧的界面的系统。 在一个实施例中，集成系统包括至少一个阻挡层沉积模块。 该系统还包括配置为通过原子层沉积沉积铜的ALD铜沉积模块。 该系统还包括铜间隙填充模块和耦合到至少一个阻挡层沉积模块和ALD铜沉积模块的至少一个传输模块。 转移模块被配置为使得基板可以在基本上不暴露于氧化物形成环境的基础之间传递。

公开(公告)号：US20080286982A1

公开(公告)日：2008-11-20

申请号：US11748783

申请日：2007-05-15

申请人： Shijian Li ,  Lily L. Pang ,  Majeed A. Foad ,  Seon-Mee Cho

发明人： Shijian Li ,  Lily L. Pang ,  Majeed A. Foad ,  Seon-Mee Cho

IPC分类号： H01L21/31

CPC分类号： H01L21/2236 ,  H01J37/32412 ,  H01J37/3244 ,  H01J37/32449

摘要： A method is provided for performing plasma immersion ion implantation with a highly uniform seasoning film on the interior of a reactor chamber having a ceiling and a cylindrical side wall and a wafer support pedestal facing the ceiling. The method includes providing a gas distribution ring with plural gas injection orifices on a periphery of a wafer support pedestal, the orifices facing radially outwardly from the wafer support pedestal. Silicon-containing gas is introduced through the gas distribution orifices of the ring to establish a radially outward flow pattern of the silicon-containing gas. The reactor includes pairs of conduit ports in the ceiling adjacent the side wall at opposing sides thereof and respective external conduits generally spanning the diameter of the chamber and coupled to respective pairs of the ports. The method further includes injecting oxygen gas through the conduit ports into the chamber to establish an axially downward flow pattern of oxygen gas in the chamber. RF power is coupled into the interior of each of the conduits to generate a toroidal plasma current of SixOy species passing through the chamber to deposit a seasoning layer of a SixOy material on surfaces within the chamber, while leaving the pedestal without a wafer so as to expose a wafer support surface of the pedestal.

摘要翻译： 提供了一种用于在具有天花板和圆柱形侧壁的反应室的内部以及面向天花板的晶片支撑台架上执行具有高度均匀的调味膜的等离子体浸没离子注入的方法。 该方法包括在晶片支撑基座的外围提供具有多个气体注入孔的气体分配环，所述孔从晶片支撑基座径向向外。 含硅气体通过环的气体分配孔引入，以建立含硅气体的径向向外流动图案。 反应器包括在天花板中的相邻侧壁处的相对侧的导管端口对，以及相应的外部导管，其通常跨越室的直径并且耦合到相应的端口对。 该方法还包括将氧气通过导管端口注入到腔室中，以在腔室中建立轴向向下的氧气气流模式。 RF功率耦合到每个导管的内部，以产生穿过室的Si O 2 O 3种类的环形等离子体电流，以沉积Si的调味层 同时在没有晶片的情况下离开基座，以便露出基座的晶片支撑表面，同时在腔室内的表面上形成一个或多个x O 材料。