公开(公告)号：US06605863B2

公开(公告)日：2003-08-12

申请号：US10178398

申请日：2002-06-24

申请人： Zhiping Yin ,  Gary Chen

发明人： Zhiping Yin ,  Gary Chen

IPC分类号： H01L2358

CPC分类号： H01L21/76814 ,  H01L21/02063 ,  H01L21/0276 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31633 ,  H01L21/76802 ,  H01L21/76807

摘要： Methods of selectively removing post-etch polymer material and dielectric antireflective coatings (DARC) without substantially etching an underlying carbon-doped low k dielectric layer, and compositions for the selective removal of a DARC layer and post-etch polymer material are provided. A composition comprising trimethylammonium fluoride is used to selectively etch a dielectric antireflective coating layer overlying a low k dielectric layer at an etch rate of the antireflective coating layer to the low k dielectric layer that is greater than the etch rate of the antireflective coating to a TEOS layer. The method and composition are useful, for example, in the formation of high aspect ratio openings in low k (carbon doped) silicon oxide dielectric layers and maintaining the integrity of the dimensions of the formed openings during a cleaning step to remove a post-etch polymer and antireflective coating.

公开(公告)号：US06605502B2

公开(公告)日：2003-08-12

申请号：US10172895

申请日：2002-06-17

申请人： Ravi Iyer ,  Steven M. McDonald ,  Thomas R. Glass ,  Zhiping Yin

发明人： Ravi Iyer ,  Steven M. McDonald ,  Thomas R. Glass ,  Zhiping Yin

IPC分类号： H01L2176

CPC分类号： G03F7/091 ,  G03F7/092 ,  H01L21/0276 ,  H01L21/32 ,  H01L21/76202 ,  Y10T428/24471 ,  Y10T428/24917

摘要： A method of forming an oxidation diffusion barrier stack for use in fabrication of integrated circuits includes forming an inorganic antireflective material layer on a semiconductor substrate assembly with an oxidation diffusion barrier layer then formed on the inorganic antireflective material layer. Another method of forming such a stack includes forming a pad oxide layer on the semiconductor substrate assembly with an inorganic antireflective material layer then formed on the pad oxide layer and an oxidation diffusion barrier layer formed on the antireflective material layer. Another method of forming the stack includes forming a pad oxide layer on the semiconductor substrate assembly. A first oxidation diffusion barrier layer is then formed on the pad oxide layer, an inorganic antireflective material layer is formed on the first oxidation diffusion barrier layer, and a second oxidation diffusion barrier layer is formed on the inorganic antireflective material layer. The antireflective material layer may include a layer of material selected from the group of silicon nitride, silicon oxide, and silicon oxynitride and further may be a silicon-rich layer. The oxidation diffusion barrier stacks may be used for oxidation of field regions for isolation in an integration circuit. Further, the various oxidation diffusion barrier stacks are also described.

公开(公告)号：US06495450B1

公开(公告)日：2002-12-17

申请号：US09620790

申请日：2000-07-21

申请人： Ravi Iyer ,  Steven M. McDonald ,  Thomas R. Glass ,  Zhiping Yin

发明人： Ravi Iyer ,  Steven M. McDonald ,  Thomas R. Glass ,  Zhiping Yin

IPC分类号： H01L214763

CPC分类号： G03F7/091 ,  G03F7/092 ,  H01L21/0276 ,  H01L21/32 ,  H01L21/76202 ,  Y10T428/24471 ,  Y10T428/24917

摘要： A method of forming an oxidation diffusion barrier stack for use in fabrication of integrated circuits includes forming an inorganic antireflective material layer on a semiconductor substrate assembly with an oxidation diffusion barrier layer then formed on the inorganic antireflective material layer. Another method of forming such a stack includes forming a pad oxide layer on the semiconductor substrate assembly with an inorganic antireflective material layer then formed on the pad oxide layer and an oxidation diffusion barrier layer formed on the antireflective material layer. The antireflective material layer may include a layer of material selected from the group of silicon nitride, silicon oxide, and silicon oxynitride and further may be a silicon-rich layer. The oxidation diffusion barrier stacks may be used for oxidation of field regions for isolation in an integration circuit. Further, the various oxidation diffusion barrier stacks are also described.

摘要翻译： 形成用于集成电路制造的氧化扩散阻挡层叠体的方法包括在半导体衬底组件上形成无机抗反射材料层，然后在无机抗反射材料层上形成氧化扩散阻挡层。 形成这种堆叠的另一种方法包括在半导体衬底组件上形成衬垫氧化物层，然后在衬垫氧化物层上形成无机抗反射材料层，形成在抗反射材料层上的氧化扩散阻挡层。 抗反射材料层可以包括选自氮化硅，氧化硅和氮氧化硅的材料层，并且还可以是富硅层。 氧化扩散阻挡层可以用于场集成电路中用于隔离的场区氧化。 此外，还描述了各种氧化扩散阻挡层叠体。

公开(公告)号：US06316285B1

公开(公告)日：2001-11-13

申请号：US09392201

申请日：1999-09-08

申请人： Tongbi Jiang ,  Zhiping Yin

发明人： Tongbi Jiang ,  Zhiping Yin

IPC分类号： H01L2144

CPC分类号： H01L23/49816 ,  H01L23/13 ,  H01L24/48 ,  H01L2224/05599 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/73215 ,  H01L2224/85399 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01087 ,  H01L2924/12043 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： Passivating layers methods for forming the same are provided for packaged integrated circuit devices. In particular, an integrated circuit die is mounted in a plastic leaded chip carrier, and a photosensitive material is then deposited over the surfaces to be passivated. Portions of the photosensitive material are then exposed to UV light, resulting in a crosslinked siloxane network. In this way, a low-temperature photodefinable passivation layer is provided for the package, with characteristics similar to conventional oxides. Advantageously, the photosensitive material can be patterned during the UV exposure, and unexposed portions selectively removed to leave the passivation layer only over desired portions of the package.

摘要翻译： 为封装的集成电路器件提供钝化层形成方法。 特别地，集成电路管芯安装在塑料引线芯片载体中，然后将感光材料沉积在待钝化的表面上。 然后将感光材料的一部分暴露于UV光下，得到交联的硅氧烷网络。 以这种方式，为封装提供了低温可光限定钝化层，具有与常规氧化物相似的特性。 有利地，可以在UV曝光期间对感光材料进行图案化，并且选择性地去除未曝光部分以仅在封装的期望部分上留下钝化层。

公开(公告)号：US06291363B1

公开(公告)日：2001-09-18

申请号：US09259713

申请日：1999-03-01

申请人： Zhiping Yin ,  Gurtej Singh Sandhu

发明人： Zhiping Yin ,  Gurtej Singh Sandhu

IPC分类号： H01L2131

CPC分类号： H01L21/3105 ,  G03F7/091 ,  H01L21/0276 ,  H01L21/3145 ,  H01L21/32139

摘要： The present invention comprises a method for preventing particle formation in a substrate overlying a DARC coating. The method comprising providing a semiconductor construct. A DARC coating is deposited on the construct with a plasma that comprises a silcon-based compound and N2O. The DARC coating is exposed to an atmosphere that effectively prevents a formation of defects in the substrate layer. The exposed DARC coating is overlayed with the substrate.

摘要翻译： 本发明包括防止在覆盖DARC涂层的基板中形成粒子的方法。 该方法包括提供半导体构造。 DARC涂层沉积在构建体上，该等离子体包含硅氧烷基化合物和N2O。 DARC涂层暴露于有效防止在基底层中形成缺陷的气氛。 暴露的DARC涂层与基材重叠。

公开(公告)号：US06225671B1

公开(公告)日：2001-05-01

申请号：US09538555

申请日：2000-03-29

申请人： Zhiping Yin

发明人： Zhiping Yin

IPC分类号： H01L2972

CPC分类号： H01L23/5329 ,  H01L21/0276 ,  H01L21/3145 ,  H01L2924/0002 ,  Y10S438/905 ,  H01L2924/00

摘要： A method of fabricating a substantially smooth-surfaced anti-reflective coating on a semiconductor device structure including generating a plasma from an inert gas in a process chamber in which the substantially smooth anti-reflective coating is to be deposited. The anti-reflective coating may be a dielectric anti-reflective coating (DARC) which includes silicon, oxygen and nitrogen, and is preferably of the general formula SixOyNz, where x equals 0.40 to 0.65, y equals 0.02 to 0.56 and z equals 0.05 to 0.33. Preferably, x+y+z equals one. The method may also include fabricating a silicon nitride layer over the anti-reflective coating. A semiconductor device which includes a silicon nitride layer over an anti-reflective coating that has been fabricated in accordance with the inventive method has a density of less than about 40,000 particles or surface roughness features in the silicon nitride of about 120-150 nanometers dimension per eight inch wafer. Accordingly, a mask that is subsequently formed over the silicon nitride layer has a substantially uniform thickness and is substantially distortion-free.

摘要翻译： 一种在半导体器件结构上制造基本上光滑表面的抗反射涂层的方法，包括在其中沉积基本上平滑的抗反射涂层的处理室中的惰性气体产生等离子体。 抗反射涂层可以是包括硅，氧和氮的电介质抗反射涂层（DARC），并且优选为通式SixOyNz，其中x等于0.40至0.65，y等于0.02至0.56，z等于0.05至 0.33。 优选地，x + y + z等于1。 该方法还可以包括在抗反射涂层上制造氮化硅层。 在根据本发明方法制造的抗反射涂层上包括氮化硅层的半导体器件具有小于约40,000个颗粒的密度或氮化硅中的表面粗糙度特征，其尺寸为约120-150纳米 八寸晶圆。 因此，随后在氮化硅层上形成的掩模具有基本均匀的厚度并且基本上无变形。

公开(公告)号：US6156674A

公开(公告)日：2000-12-05

申请号：US200035

申请日：1998-11-25

申请人： Weimin Li ,  Zhiping Yin

发明人： Weimin Li ,  Zhiping Yin

IPC分类号： H01L21/316 ,  H01L21/469

CPC分类号： H01L21/02126 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/31633 ,  H01L21/31658

摘要： In one aspect, the invention encompasses a semiconductor processing method wherein a first gaseous precursor compound is combined with a second gaseous precursor compound to form a material comprising carbon, silicon and oxygen. A layer of the material is formed over a semiconductive substrate. In another aspect, the invention encompasses another semiconductor processing method. Methylsilane is combined with a form of oxygen other than H.sub.2 O.sub.2 to form an insulative compound comprising silicon bound to CH.sub.3 groups and oxygen. A layer of the insulative compound is formed over a semiconductive substrate. In yet another aspect, the invention encompasses yet another semiconductor processing method. Methylsilane is subjected to a plasma treatment to form a layer over a semiconductive substrate, the layer comprises silicon bound to CH.sub.3 groups. The layer is exposed to oxygen to convert the layer to an insulative compound comprising silicon bound to oxygen as well as the CH.sub.3 groups.

摘要翻译： 在一个方面，本发明包括半导体加工方法，其中第一气态前体化合物与第二气态前体化合物组合以形成包含碳，硅和氧的材料。 一层材料形成在半导体衬底上。 在另一方面，本发明包括另一种半导体处理方法。 甲基硅烷与除H 2 O 2以外的氧气形式组合以形成包含结合至CH 3基团和氧的硅的绝缘化合物。 一层绝缘化合物形成在半导体衬底上。 在另一方面，本发明还包括另一种半导体处理方法。 对甲基硅烷进行等离子体处理以在半导体基底上形成层，该层包含与CH3基团结合的硅。 该层暴露于氧气以将该层转化为包含与氧结合的硅以及CH 3基团的绝缘化合物。

公开(公告)号：US06150257A

公开(公告)日：2000-11-21

申请号：US143289

申请日：1998-08-28

申请人： Zhiping Yin ,  Mark Jost

发明人： Zhiping Yin ,  Mark Jost

IPC分类号： H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/76849 ,  H01L21/76801 ,  H01L21/76867

摘要： The present invention relates to the formation of an ILD layer while preventing or reducing oxidation of the upper surface of a metallic interconnect. Avoidance of oxidation of the upper surface of a metallic interconnect is achieved according to the present invention by passivating the exposed upper surface of the metallic interconnect prior to formation of the ILD. In order to avoid the oxidation of an upper surface of an interconnect during the formation of an ILD layer, an in situ passivation of the upper surface of the interconnect is formed immediately prior to or simultaneously with the formation of the ILD.

摘要翻译： 本发明涉及ILD层的形成，同时防止或减少金属互连的上表面的氧化。 根据本发明，通过在形成ILD之前钝化金属互连的暴露的上表面来实现避免金属互连的上表面的氧化。 为了避免在形成ILD层期间互连的上表面的氧化，在形成ILD之前或同时形成互连的上表面的原位钝化。

公开(公告)号：US6144083A

公开(公告)日：2000-11-07

申请号：US271621

申请日：1999-03-17

申请人： Zhiping Yin

发明人： Zhiping Yin

IPC分类号： H01L21/027 ,  H01L21/314 ,  H01L23/532 ,  H01L29/72

CPC分类号： H01L23/5329 ,  H01L21/0276 ,  H01L21/3145 ,  H01L2924/0002 ,  Y10S438/905

摘要： A method of fabricating a substantially smooth-surfaced anti-reflective coating on a semiconductor device structure including generating a plasma from an inert gas in a process chamber in which the substantially smooth anti-reflective coating is to be deposited. The anti-reflective coating may be a dielectric anti-reflective coating (DARC) which includes silicon, oxygen and nitrogen, and is preferably of the general formula Si.sub.x O.sub.y N.sub.z, where x equals 0.40 to 0.65, y equals 0.02 to 0.56 and z equals 0.05 to 0.33. Preferably, x+y+z equals one. The method may also include fabricating a silicon nitride layer over the anti-reflective coating. A semiconductor device which includes a silicon nitride layer over an anti-reflective coating that has been fabricated in accordance with the inventive method has a density of less than about 40,000 particles or surface roughness features in the silicon nitride of about 120-150 nanometers dimension per eight inch wafer. Accordingly, a mask that is subsequently formed over the silicon nitride layer has a substantially uniform thickness and is substantially distortion-free.

公开(公告)号：US6121133A

公开(公告)日：2000-09-19

申请号：US916276

申请日：1997-08-22

申请人： Ravi Iyer ,  Steven M. McDonald ,  Thomas R. Glass ,  Zhiping Yin

发明人： Ravi Iyer ,  Steven M. McDonald ,  Thomas R. Glass ,  Zhiping Yin

IPC分类号： G03F7/11 ,  G03F7/09 ,  H01L21/027 ,  H01L21/316 ,  H01L21/32 ,  H01L21/76 ,  H01L21/762 ,  H01L21/4763

CPC分类号： G03F7/091 ,  G03F7/092 ,  H01L21/0276 ,  H01L21/32 ,  H01L21/76202 ,  Y10T428/24471 ,  Y10T428/24917

摘要： A method of forming an oxidation diffusion barrier stack for use in fabrication of integrated circuits includes forming an inorganic antireflective material layer on a semiconductor substrate assembly with an oxidation diffusion barrier layer then formed on the inorganic antireflective material layer. Another method of forming such a stack includes forming a pad oxide layer on the semiconductor substrate assembly with an inorganic antireflective material layer then formed on the pad oxide layer and an oxidation diffusion barrier layer formed on the antireflective material layer. Another method of forming the stack includes forming a pad oxide layer on the semiconductor substrate assembly. A first oxidation diffusion barrier layer is then formed on the pad oxide layer, an inorganic antireflective material layer is formed on the first oxidation diffusion barrier layer, and a second oxidation diffusion barrier layer is formed on the inorganic antireflective material layer. The antireflective material layer may include a layer of material selected from the group of silicon nitride, silicon oxide, and silicon oxynitride and further may be a silicon-rich layer. The oxidation diffusion barrier stacks may be used for oxidation of field regions for isolation in an integration circuit. Further, the various oxidation diffusion barrier stacks are also described.