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    Field-effect-controlled semiconductor component and method of fabricating a doping layer in a vertically configured semiconductor component
    74.
    发明授权
    Field-effect-controlled semiconductor component and method of fabricating a doping layer in a vertically configured semiconductor component 有权
    场效应控制半导体元件以及在垂直配置的半导体元件中制造掺杂层的方法

    公开(公告)号：US06828605B2

    公开(公告)日：2004-12-07

    申请号：US10013997

    申请日：2001-12-11

    申请人： Ignaz Eisele ,  Walter Hansch ,  Christoph Fink ,  Wolfgang Werner

    发明人： Ignaz Eisele ,  Walter Hansch ,  Christoph Fink ,  Wolfgang Werner

    IPC分类号： H01L2976

    CPC分类号： H01L29/7813 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/365 ,  H01L29/66659 ,  H01L29/7835

    摘要： A field-effect-controllable semiconductor component has at least one source zone and at least one drain zone of a first conductivity type, and at least one body zone of a second conductivity type. The body zone is provided between the source zone and the drain zone. In each case at least a first and a second region of the second conductivity type are provided in a channel zone. The first region has a first doping concentration and the second region has a second doping concentration, which is lower than the first doping concentration. The combination of the two regions produces a semiconductor component threshold voltage greater than zero and the on resistance is lower than that merely due to a channel zone doped with the first or second doping concentration.

    摘要翻译： 场效应可控半导体元件具有至少一个源极区和至少一个第一导电类型的漏极区和至少一个第二导电类型的体区。 体区设置在源区和排水区之间。 在每种情况下，第二导电类型的至少第一和第二区域设置在通道区域中。 第一区域具有第一掺杂浓度，第二区域具有低于第一掺杂浓度的第二掺杂浓度。 两个区域的组合产生大于零的半导体元件阈值电压，并且导通电阻低于仅由掺杂有第一或第二掺杂浓度的沟道区引起的导通电阻。

    MOS-transistor structure with a trench-gate-electrode and a limited specific turn-on resistance and method for producing an MOS-transistor structure
    75.
    发明授权
    MOS-transistor structure with a trench-gate-electrode and a limited specific turn-on resistance and method for producing an MOS-transistor structure 有权
    具有沟槽栅电极的MOS晶体管结构和有限的特定导通电阻以及用于制造MOS晶体管结构的方法

    公开(公告)号：US06465843B1

    公开(公告)日：2002-10-15

    申请号：US09701291

    申请日：2001-04-27

    申请人： Franz Hirler ,  Wolfgang Werner

    发明人： Franz Hirler ,  Wolfgang Werner

    IPC分类号： H01L2976

    CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095

    摘要： MOS transistor structure having a trench gate electrode and a reduced on resistance, and methods for fabricating a MOS transistor structure A MOS transistor structure having a trench gate electrode and a reduced on resistance is described, the integral of the doping concentration of the body region in the lateral direction between two adjacent drift regions being greater than or equal to the integral of the doping concentration in a drift region in the same lateral direction. Furthermore, methods for fabricating a MOS transistor structure are disclosed, body regions and drift regions being produced by epitaxial growth and implantation, repeated epitaxial growth or by filling trenches with doped conduction material.

    摘要翻译： 描述了具有沟槽栅电极和导通电阻的MOS晶体管结构以及用于制造MOS晶体管结构的方法具有沟槽栅极和导通电阻的MOS晶体管结构，其中体区的掺杂浓度的积分 两个相邻漂移区域之间的横向方向大于或等于在相同横向方向上的漂移区域中的掺杂浓度的积分。此外，公开了用于制造MOS晶体管结构的方法，通过外延生产体区和漂移区 生长和植入，重复外延生长或通过用掺杂导电材料填充沟槽。

    Field effect-controlled, vertical semiconductor component
    76.
    发明授权
    Field effect-controlled, vertical semiconductor component 有权
    场效应控制，垂直半导体元件

    公开(公告)号：US06417542B2

    公开(公告)日：2002-07-09

    申请号：US09867490

    申请日：2001-05-30

    申请人： Wolfgang Werner

    发明人： Wolfgang Werner

    IPC分类号： H01L2976

    CPC分类号： H01L29/7802 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7813 ,  H01L29/7832

    摘要： The field effect-controlled, vertical semiconductor component is disposed in a semiconductor element and contains at least one internal zone of the first conductivity type, at least one basic zone of the second conductivity type which adjoins the internal zone and a first surface of the semiconductor element, and at least one source zone of the first conductivity type which is disposed in the basic zone. At least one further basic zone of the second conductivity type is spaced apart from the basic zone by an intermediate zone of the first conductivity type, and at least one source contact zone is provided which connects the source zones, the basic zones and the further basic zones to one another with low impedance.

    摘要翻译： 场效应控制的垂直半导体部件设置在半导体元件中并且包含至少一个第一导电类型的内部区域，第二导电类型的邻接内部区域的至少一个基本区域和半导体的第一表面 元件，以及设置在基本区域中的至少一个第一导电类型的源区。 第二导电类型的至少一个另外的基本区域通过第一导电类型的中间区域与基本区域间隔开，并且提供至少一个源极接触区域，其连接源极区域，基本区域和进一步的基本区域 区域彼此具有低阻抗。

    Fusible link in an integrated semiconductor circuit and a memory cell of a semiconductor component
    78.
    发明授权
    Fusible link in an integrated semiconductor circuit and a memory cell of a semiconductor component 有权
    集成半导体电路中的可熔连接和半导体部件的存储单元

    公开(公告)号：US06303980B1

    公开(公告)日：2001-10-16

    申请号：US09549276

    申请日：2000-04-14

    申请人： Wolfgang Werner ,  Karlheinz Müller ,  Holger Pöhle

    发明人： Wolfgang Werner ,  Karlheinz Müller ,  Holger Pöhle

    IPC分类号： H01L2702

    CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A fusible link in an integrated semiconductor circuit and a process for producing the fusible link contemplate the disposition of a fusible link, which is constructed with a cross-sectional constriction as a desired fusing point for its conductor track, in a void. A surface of the void and/or a bare conductor track can be covered with a protection layer, to prevent corrosion. The advantages of such a fusible link are a lower ignition energy and increased reliability. The fusible link may be used as a memory element of a PROM.

    摘要翻译： 集成半导体电路中的可熔链路和用于制造可熔连接的工艺的过程考虑到在空隙中构造有作为其导体轨迹的期望的熔合点的横截面收缩的可熔连接件的布置。 空隙和/或裸导体轨道的表面可以用保护层覆盖，以防止腐蚀。 这种可熔连接件的优点是较低的点火能量和更高的可靠性。 可熔链路可以用作PROM的存储元件。

    Field effect-controllable semiconductor component
    79.
    发明授权
    Field effect-controllable semiconductor component 有权
    场效应可控半导体元件

    公开(公告)号：US6147381A

    公开(公告)日：2000-11-14

    申请号：US187501

    申请日：1998-11-06

    申请人： Franz Hirler ,  Frank Pfirsch ,  Wolfgang Werner

    发明人： Franz Hirler ,  Frank Pfirsch ,  Wolfgang Werner

    IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/739 ,  H01L29/72

    CPC分类号： H01L29/0623 ,  H01L29/0619 ,  H01L29/7395 ,  H01L29/0847

    摘要： A field effect-controllable semiconductor component, such as a new IGBT using planar technology, includes a shielding zone disposed about a base zone, resulting in elevation of a minority charge carrier density at a cathode side of the IGBT, leading to a reduction of forward voltage. The effect of a drift field produced due to a concentration gradient between the shielding zone and the base zone is that the inner zone no longer acts as a sink for the minority charge carriers. In order to ensure that the breakdown voltage of the IGBT is not reduced by the incorporation of the shielding zone, a non-connected, floating region of high conductivity is disposed in the region of the inner zone. A lower edge of the non-connected, floating region is deeper in the inner zone than a lower edge of the shielding zone. The non-connected, floating region has a conduction type opposite that of the shielding zone and the inner zone.

    摘要翻译： 诸如使用平面技术的新型IGBT的场效应可控半导体部件包括围绕基极区设置的屏蔽区域，导致IGBT的阴极侧的少量电荷载流子密度升高，导致向前的减少 电压。 由于屏蔽区域和基极区域之间的浓度梯度而产生的漂移场的影响是内部区域不再充当少量电荷载流子的吸收器。 为了确保IGBT的击穿电压不被并入屏蔽区域而降低，在内部区域中设置高导电性的非连接浮动区域。 非连接的浮动区域的下边缘在内区域比屏蔽区域的下边缘更深。 非连接的浮动区域具有与屏蔽区域和内部区域相反的导电类型。

    Production method for a micromechanical component with a movable structure
    80.
    发明授权
    Production method for a micromechanical component with a movable structure 失效
    具有可移动结构的微机械部件的制造方法

    公开(公告)号：US5817539A

    公开(公告)日：1998-10-06

    申请号：US780489

    申请日：1997-01-08

    申请人： Wolfgang Werner

    发明人： Wolfgang Werner

    IPC分类号： H01L21/302 ,  B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  H01L21/306 ,  H01L49/00 ,  H01L21/00 ,  G01P15/00

    CPC分类号： B81C1/00944 ,  G01P15/0802

    摘要： In order to avoid sticking effects before a movable micromechanical structure is laid bare, in a production method for a micromechanical component with a movable structure, the structure is joined to a suitable mount, such as the substrate, through an auxiliary structure, and this auxiliary structure is not removed until after the movable structure is laid bare. This method is compatible with IC production processes for integrated circuits.

    摘要翻译： 为了避免在可移动微机械结构裸露之前的粘附效应，在具有可移动结构的微机械部件的制造方法中，结构通过辅助结构连接到诸如基板的合适的安装件，并且该辅助 直到可移动结构裸露后才能移除结构。 该方法与集成电路的IC生产流程兼容。