公开(公告)号：US07705611B2

公开(公告)日：2010-04-27

申请号：US11858822

申请日：2007-09-20

申请人： Masako Ogata ,  Kazuhiro Suzuki ,  Hideyuki Funaki ,  Kazuhiko Itaya

发明人： Masako Ogata ,  Kazuhiro Suzuki ,  Hideyuki Funaki ,  Kazuhiko Itaya

IPC分类号： G01R27/26

CPC分类号： H03K17/955 ,  G01D5/2417 ,  H03K2217/960755

摘要： A sensor device for detecting a positional relationship between a first member and a second member, includes a first charge-holding electrode provided on a surface of the first member and holding a charge, a second charge-holding electrode provided on the surface of the first member and holding a charge differing from the charge held by the first charge-holding electrode, a first charge-induced electrode provided on a surface of the second member, the first charge-induced electrode having a charge induced therein in accordance with the charge held by the first charge-holding electrode, when the first charge-holding electrode approaches the first charge-induced electrode, a second charge-induced electrode provided on the surface of the second member, the second charge-induced electrode having a charge induced therein in accordance with the charge held by the second charge-holding electrode, when the second charge-holding electrode approaches the second charge-induced electrode.

摘要翻译： 一种用于检测第一构件和第二构件之间的位置关系的传感器装置，包括设置在第一构件的表面上并保持电荷的第一电荷保持电极，设置在第一构件和第二构件的表面上的第二电荷保持电极 并且保持与第一电荷保持电极所保持的电荷不同的电荷，设置在第二部件的表面上的第一电荷感应电极，第一电荷感应电极根据电荷保持在其中诱导电荷 通过第一电荷保持电极，当第一电荷保持电极接近第一电荷感应电极时，设置在第二元件的表面上的第二电荷感应电极，其中在其中引入电荷的第二电荷感应电极 根据第二电荷保持电极保持的电荷，当第二电荷保持电极接近第二电荷感应电极时。

公开(公告)号：US20090242951A1

公开(公告)日：2009-10-01

申请号：US12211427

申请日：2008-09-16

申请人： Risako UENO ,  Hideyuki Funaki ,  Yoshinori Ilda ,  Hiroto Honda

发明人： Risako UENO ,  Hideyuki Funaki ,  Yoshinori Ilda ,  Hiroto Honda

IPC分类号： H01L31/00

CPC分类号： H01L27/1462 ,  H01L27/14605 ,  H01L27/1464

摘要： A solid-state image pickup device has a photoelectric conversion element that converts light incident from a first surface of a substrate into a signal charge and accumulates the signal charge, a transistor that is formed on a second surface side opposite to the first surface of the substrate and reads out the signal charge accumulated by the photoelectric conversion element, a supporting substrate stuck to the second surface of the substrate, and an antireflection coating formed on the first surface of the substrate, wherein the first surface of the substrate includes a curved surface or an inclined surface forming a prescribed angle to the second surface.

摘要翻译： 固体摄像装置具有将从基板的第一面入射的光转换成信号电荷并积累信号电荷的光电转换元件，形成在与第一表面相反的第二表面侧的晶体管 读取由光电转换元件积累的信号电荷，粘贴到基板的第二表面的支撑基板和形成在基板的第一表面上的抗反射涂层，其中基板的第一表面包括弯曲表面 或与第二表面形成规定角度的倾斜表面。

公开(公告)号：US20070273018A1

公开(公告)日：2007-11-29

申请号：US11678996

申请日：2007-02-26

申请人： Yutaka Onozuka ,  Hiroshi Yamada ,  Hideyuki Funaki ,  Kazuhiko Itaya

发明人： Yutaka Onozuka ,  Hiroshi Yamada ,  Hideyuki Funaki ,  Kazuhiko Itaya

IPC分类号： H01L23/48 ,  H01L21/00

CPC分类号： B81C1/0023 ,  B81C1/00246 ,  B81C2201/019 ,  B81C2203/0771 ,  H01L24/19 ,  H01L24/24 ,  H01L24/96 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/24137 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/1461 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2924/00

摘要： It is made possible to provide a highly integrated, thin apparatus can be obtained, even if the apparatus contains MEMS devices and semiconductor devices. A semiconductor apparatus includes: a first chip comprising a MEMS device formed therein; a second chip comprising a semiconductor device formed therein; and an adhesive layer bonding a side face of the first chip to a side face of the second chip, and having a lower Young's modulus than the material of the first and second chips.

摘要翻译： 即使该装置包含MEMS器件和半导体器件，也可以获得高度集成的薄型器件。 一种半导体装置包括：第一芯片，其包括形成在其中的MEMS器件; 包括其中形成的半导体器件的第二芯片; 以及将第一芯片的侧面接合到第二芯片的侧面并​​且具有比第一芯片和第二芯片的材料更低的杨氏模量的粘合剂层。

公开(公告)号：US20070196920A1

公开(公告)日：2007-08-23

申请号：US11507674

申请日：2006-08-22

申请人： Kazuhiro Suzuki ,  Yujiro Naruse ,  Hideyuki Funaki ,  Kazuhiko Itaya ,  Shuichi Uchikoga

发明人： Kazuhiro Suzuki ,  Yujiro Naruse ,  Hideyuki Funaki ,  Kazuhiko Itaya ,  Shuichi Uchikoga

IPC分类号： C12N15/09 ,  C12N15/00 ,  C12M3/00

CPC分类号： A61N5/00 ,  A61N1/406 ,  A61N5/0601

摘要： A cell metamorphosing device includes micro dishes which serves as diaphragms and hold a mixed medium containing harmful cells and nano-scale particles, an AC voltage supply, a heater and an inductor. The AC voltage supply faces with the micro dishes 2 with a space, and applies a bias to the micro dishes 2, so that the nano-scale particles are bombarded onto the harmful cells and destroy them.

摘要翻译： 细胞变形装置包括用作隔膜并保持含有有害细胞和纳米级粒子的混合介质，AC电压源，加热器和电感器的微型盘。 交流电压供给面与微型菜肴2具有空间，并向微型菜肴2施加偏压，使得纳米级颗粒被轰击到有害细胞上并将其破坏。

公开(公告)号：US06740946B2

公开(公告)日：2004-05-25

申请号：US10230200

申请日：2002-08-29

申请人： Hideyuki Funaki

发明人： Hideyuki Funaki

IPC分类号： H01L2982

CPC分类号： H03H9/462 ,  B81B3/0021 ,  B81B2201/016 ,  B81B2201/0271 ,  B81B2203/0109 ,  B81B2203/051 ,  H01H13/80 ,  H01H59/0009 ,  H01H2001/0078 ,  H01H2201/008 ,  H03H3/0072

摘要： A micromechanical switch includes a substrate, at least one pair of support members fixed to the substrate, and at least one pair of beam members placed in proximity and parallel to each other above the substrate, and connected to one of the support members, respectively, each of the beam members having a moving portion which is movable with a gap with respect to the substrate. A contact portion is provided on the moving portion, and a driving electrode is placed on the substrate between the pair of beam members to attract the moving portions of the beam members in a direction in a plane substantially parallel to the substrate with an electrostatic force so that the contact portions of the bean members which are opposed to each other are short-circuited.

摘要翻译： 微机械开关包括基板，固定到基板的至少一对支撑构件和至少一对梁构件，所述至少一对梁构件分别邻近并平行放置在基板上方并分别连接到支撑构件之一， 每个梁构件具有可相对于基板间隙移动的移动部分。 接触部分设置在移动部分上，并且驱动电极被放置在一对梁构件之间的基板上，以静电力吸引梁构件的移动部分在大致平行于基板的平面中的方向上 豆制品的彼此相对的接触部分短路。

公开(公告)号：US6150702A

公开(公告)日：2000-11-21

申请号：US340721

申请日：1999-06-29

申请人： Hideyuki Funaki ,  Akio Nakagawa ,  Fumito Suzuki

发明人： Hideyuki Funaki ,  Akio Nakagawa ,  Fumito Suzuki

IPC分类号： H01L29/06 ,  H01L29/40 ,  H01L29/417 ,  H01L29/78 ,  H01L29/861 ,  H01L23/58

CPC分类号： H01L29/404 ,  H01L29/417 ,  H01L29/8611

摘要： The breakdown strength of a lateral diode using a field plate is improved. There are provided a track-like first field plate connected to an anode electrode, a track-like second field plate formed outside the first field plate and connected to a cathode electrode, track-like third field plates provided concentrically between the first and second field plates, and fourth field plates provided so as to cross the first to third field plates and connected to each of them. The fourth field plates are so positioned that they allow more current to flow in the corner sections and under the electrodes where an electric field is liable to concentrate.

摘要翻译： 使用场板的横向二极管的击穿强度得到改善。 提供了连接到阳极电极的轨道状第一场板，形成在第一场板外部并连接到阴极电极的轨道状第二场板，同心地设置在第一场和第二场之间的轨道状第三场板 板和第四场板，其设置成穿过第一至第三场板并且连接到它们中的每一个。 第四场板的定位使得它们允许更多的电流在电场易于集中的拐角部分和电极下方流动。

公开(公告)号：US5985708A

公开(公告)日：1999-11-16

申请号：US816596

申请日：1997-03-13

申请人： Akio Nakagawa ,  Naoharu Sugiyama ,  Tomoko Matsudai ,  Norio Yasuhara ,  Atsusi Kurobe ,  Hideyuki Funaki ,  Yusuke Kawaguchi ,  Yoshihiro Yamaguchi

发明人： Akio Nakagawa ,  Naoharu Sugiyama ,  Tomoko Matsudai ,  Norio Yasuhara ,  Atsusi Kurobe ,  Hideyuki Funaki ,  Yusuke Kawaguchi ,  Yoshihiro Yamaguchi

IPC分类号： H01L27/12 ,  H01L29/73 ,  H01L29/739 ,  H01L29/786 ,  H01L21/8249

CPC分类号： H01L29/78696 ,  H01L27/1203 ,  H01L29/7317 ,  H01L29/7394 ,  H01L29/78612 ,  H01L29/78624 ,  H01L29/78639 ,  H01L29/78645 ,  H01L29/78687

摘要： A semiconductor apparatus comprising a vertical type semiconductor device having a first conducting type semiconductor substrate, a drain layer formed on the surface of the semiconductor substrate, a drain electrode formed on the surface of the drain layer, a second conducting type base layer selectively formed on the surface of the semiconductor substrate opposite to the drain layer, a first conducting type source layer selectively formed on the surface of the second conducting type base layer, a source electrode formed on the first conducting type source layer and the second conducting type base layer, and a gate electrode formed in contact with the first conducting type source layer, the second conducting type base layer and the semiconductor substrate through a gate insulating film and a lateral semiconductor device having an insulating layer formed in a region of the surface of the semiconductor substrate different from the second conducting type base layer, and a polycrystalline semiconductor layer formed on the insulating layer and having a first conducting type region and a second conducting type region, wherein the first conducting type source layer of the vertical semiconductor device and the first conducting type region of the polycrystalline semiconductor layer are simultaneously formed.

摘要翻译： 一种半导体装置，包括具有第一导电型半导体衬底的垂直型半导体器件，形成在半导体衬底的表面上的漏极层，形成在漏极层的表面上的漏电极，第二导电型基极层， 所述半导体衬底的与所述漏极层相对的表面，选择性地形成在所述第二导电型基极层的表面上的第一导电型源极层，形成在所述第一导电型源极层和所述第二导电型基极层上的源电极， 以及通过栅极绝缘膜与第一导电型源极层，第二导电型基极层和半导体基板接触形成的栅电极，以及在半导体基板的表面的区域中形成有绝缘层的侧面半导体装置 不同于第二导电型基底层，和多晶 半导体层形成在绝缘层上并具有第一导电类型区域和第二导电类型区域，其中垂直半导体器件的第一导电型源极层和多晶半导体层的第一导电类型区域同时形成。

公开(公告)号：US5982015A

公开(公告)日：1999-11-09

申请号：US251489

申请日：1999-02-17

申请人： Keizo Hirayama ,  Hideyuki Funaki ,  Fumito Suzuki ,  Akio Nakagawa

发明人： Keizo Hirayama ,  Hideyuki Funaki ,  Fumito Suzuki ,  Akio Nakagawa

IPC分类号： H01L29/06 ,  H01L29/40 ,  H01L29/47 ,  H01L29/861 ,  H01L29/872 ,  H01L27/095 ,  H01L29/812 ,  H01L31/07

CPC分类号： H01L29/404 ,  H01L29/0692 ,  H01L29/8611 ,  H01L29/872 ,  Y10S257/928

摘要： Disclosed is a high breakdown voltage semiconductor device comprising a semiconductor substrate, an active layer consisting of a high resistivity semiconductor layer of a first conductivity type formed on the substrate with an insulating layer interposed therebetween, a first impurity region of the first conductivity type formed within the active layer, a second impurity region of a second conductivity type formed within the active layer, a third impurity region of the second conductivity type formed within the second impurity region and having a high impurity concentration, a first electrode being in ohmic contact with the first impurity region and the fourth impurity region, and a second electrode being in Schottky contact with the second impurity region and in ohmic contact with the third impurity region.

公开(公告)号：US5981983A

公开(公告)日：1999-11-09

申请号：US933135

申请日：1997-09-18

申请人： Hideyuki Funaki ,  Yoshihiro Yamaguchi

发明人： Hideyuki Funaki ,  Yoshihiro Yamaguchi

IPC分类号： H01L29/417 ,  H01L29/739 ,  H01L29/68

CPC分类号： H01L29/41758 ,  H01L29/7394

摘要： A semiconductor device includes a substrate, an insulating layer formed on the substrate, a base layer of a first conductivity type formed on the insulating layer, a drain layer of a second conductivity type selectively formed above the surface of the base layer of the first conductivity type, a drain electrode formed on and connected to the drain layer of the second conductivity type, a base layer of the second conductivity type selectively formed on the base layer of the first conductivity type, a source layer of the first conductivity type isolated from the base layer of the first conductivity type and selectively formed in the surface area of the base layer of the second conductivity type, a source electrode formed on and connected to the source layer of the first conductivity type and the base layer of the second conductivity type, and a gate electrode formed above a portion of the base layer of the second conductivity type which lies between the source layer of the first conductivity type and the base layer of the first conductivity type with a gate insulating film disposed therebetween.

摘要翻译： 半导体器件包括基板，形成在基板上的绝缘层，形成在绝缘层上的第一导电类型的基极层，第二导电类型的漏极层，选择性地形成在第一导电性的基底层表面上方 形成在第二导电类型的漏极层上并连接到第二导电类型的漏极层的漏电极，选择性地形成在第一导电类型的基极层上的第二导电类型的基极层，与第一导电类型的第一导电类型隔离的源极层 第一导电类型的基底层，并且选择性地形成在第二导电类型的基底层的表面区域中，形成在第一导电类型的源极层和第二导电类型的基极层上并连接到第二导电类型的源极层的源电极， 以及形成在位于第一导电体的源极层之间的第二导电类型的基底层的一部分上方的栅电极 vity型和第一导电类型的基底层，其间设置有栅极绝缘膜。

公开(公告)号：US5894164A

公开(公告)日：1999-04-13

申请号：US927691

申请日：1997-09-11

申请人： Hideyuki Funaki ,  Akio Nakagawa ,  Norio Yasuhara ,  Yoshinori Terazaki

发明人： Hideyuki Funaki ,  Akio Nakagawa ,  Norio Yasuhara ,  Yoshinori Terazaki

IPC分类号： H01L29/06 ,  H01L29/739 ,  H01L29/72

CPC分类号： H01L29/7394 ,  H01L29/0696

摘要： A lateral IGBT has a n-source layer and a p-contact layer both in contact with a source electrode. The source layer has a trunk adjacent to a channel region under a gate electrode, and a plurality of branches extending from its trunk to the source electrode to be in contact with the source electrode. The contact layer has a trunk in contact with the source electrode, and a plurality of branches extending from its trunk to the source layer trunk The source layer branches and the contact layer branches have shapes complementary with each other and are alternately arranged. The source layer trunk has a width La in an X direction (channel direction), which satisfies a condition, 0.5 .mu.m

摘要翻译： 横向IGBT具有与源电极接触的n源层和p接触层。 源极层具有与栅电极下方的沟道区域相邻的中继线，以及从其主干延伸到源极电极与源极电极接触的多个分支。 接触层具有与源电极接触的干线，以及从其干线延伸到源层干线的多个分支。源极层分支和接触层分支具有彼此互补的形状并交替布置。 源层干线在X方向（沟道方向）上具有宽度La，满足0.5μm