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    Magnetic random access memory
    73.
    发明授权
    Magnetic random access memory 有权
    磁性随机存取存储器

    公开(公告)号：US08526222B2

    公开(公告)日：2013-09-03

    申请号：US13606737

    申请日：2012-09-07

    申请人： Nobuyuki Ishiwata ,  Hideaki Numata ,  Norikazu Ohshima

    发明人： Nobuyuki Ishiwata ,  Hideaki Numata ,  Norikazu Ohshima

    IPC分类号： G11C11/15

    CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L23/367 ,  H01L27/222 ,  H01L43/08 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00

    摘要： A magnetic random access memory according to the present invention is provided with: a magnetic recording layer including a magnetization free region having a reversible magnetization, wherein a write current is flown through the magnetic recording layer in an in-plane direction; a magnetization fixed layer having a fixed magnetization; a non-magnetic layer provided between the magnetization free region and the magnetization fixed layer; and a heat sink structure provided to be opposed to the magnetic recording layer and having a function of receiving and radiating heat generated in the magnetic recording layer. The magnetic random access memory thus-structured radiates heat generated in the magnetic recording layer by using the heat sink structure, suppressing the temperature increase caused by the write current flown in the in-plane direction.

    摘要翻译： 根据本发明的磁性随机存取存储器具有：包括具有可逆磁化强度的无磁化区的磁记录层，其中写入电流在面内方向上流过磁记录层; 具有固定磁化强度的磁化固定层; 设置在磁化自由区​​域和磁化固定层之间的非磁性层; 以及设置成与磁记录层相对并且具有接收和辐射在磁记录层中产生的热的功能的散热结构。 这样结构的磁性随机存取存储器通过使用散热器结构辐射在磁记录层中产生的热量，从而抑制由在面内方向上流动的写入电流引起的温度升高。

    MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY
    75.
    发明申请
    MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY 有权
    磁记忆元件和磁记忆

    公开(公告)号：US20110297909A1

    公开(公告)日：2011-12-08

    申请号：US13145082

    申请日：2010-01-28

    申请人： Shunsuke Fukami ,  Tetsuhiro Suzuki ,  Kiyokazu Nagahara ,  Nobuyuki Ishiwata ,  Norikazu Ohshima

    发明人： Shunsuke Fukami ,  Tetsuhiro Suzuki ,  Kiyokazu Nagahara ,  Nobuyuki Ishiwata ,  Norikazu Ohshima

    IPC分类号： H01L27/22 ,  H01L43/02

    CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

    摘要： A magnetic memory element includes: a first magnetization free layer formed of a ferromagnetic material having perpendicular magnetic anisotropy; a second magnetization free layer provided near the first magnetization free layer and formed of a ferromagnetic material having in-plane magnetic anisotropy; a reference layer formed of a ferromagnetic material having in-plane magnetic anisotropy; and a non-magnetic layer provided between the second magnetization free layer and the reference layer. The first magnetization free layer includes: a first magnetization fixed region of which magnetization is fixed, a second magnetization fixed region of which magnetization is fixed, and a magnetization free region which is connected to the first magnetization fixed region and the second magnetization fixed region, and of which magnetization can be switched. The second magnetization free layer is included in the first magnetization free layer in a plane parallel to a substrate. The second magnetization free layer is provided in a first direction away from the magnetization free region in the plane.

    摘要翻译： 磁存储元件包括：由具有垂直磁各向异性的铁磁材料形成的第一磁化自由层; 第二磁化自由层，设置在第一磁化自由层附近并由具有面内磁各向异性的铁磁材料形成; 由具有面内磁各向异性的铁磁材料形成的参考层; 以及设置在第二磁化自由层和参考层之间的非磁性层。 第一磁化自由层包括：磁化固定的第一磁化固定区域，固定磁化的第二磁化固定区域和连接到第一磁化固定区域和第二磁化固定区域的无磁化区域， 并且其中可以切换磁化。 第二磁化自由层包含在平行于衬底的平面中的第一磁化自由层中。 第二磁化自由层设置在远离平面中的无磁化区域的第一方向上。

    MAGNETIC RANDOM ACCESS MEMORY, METHOD OF INITIALIZING MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF WRITING MAGNETIC RANDOM ACCESS MEMORY
    77.
    发明申请
    MAGNETIC RANDOM ACCESS MEMORY, METHOD OF INITIALIZING MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF WRITING MAGNETIC RANDOM ACCESS MEMORY 有权
    磁性随机存取存储器，磁化随机存取存储器的初始化方法和写入磁性随机存取存储器的方法

    公开(公告)号：US20110157967A1

    公开(公告)日：2011-06-30

    申请号：US13003290

    申请日：2009-06-26

    申请人： Tetsuhiro Suzuki ,  Shunsuke Fukami ,  Kiyokazu Nagahara ,  Norikazu Ohshima ,  Nobuyuki Ishiwata

    发明人： Tetsuhiro Suzuki ,  Shunsuke Fukami ,  Kiyokazu Nagahara ,  Norikazu Ohshima ,  Nobuyuki Ishiwata

    IPC分类号： G11C11/14 ,  H01L29/82

    CPC分类号： H01L27/228 ,  G11C11/15 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/08

    摘要： A magnetic memory includes a magnetization recording layer, a first terminal, a second terminal, a magnetization pinned layer and a non-magnetic layer. The magnetization recording layer has a vertical magnetic anisotropy and includes a ferromagnetic layer. The first terminal is connected to one end of a first region in the magnetization recording layer. The second terminal is connected to the other end of the first region. The non-magnetic layer is arranged on the first region. The magnetization pinned layer is arranged on the non-magnetic layer and is located on the side opposite to the first region. The magnetization recording layer includes: a first extension portion located outside the first terminal in the magnetization recording layer; and a property changing structure that is arranged in the first extension portion and substantially changes a magnetization switching property of the magnetization recording layer.

    摘要翻译： 磁存储器包括磁化记录层，第一端子，第二端子，磁化固定层和非磁性层。 磁化记录层具有垂直磁各向异性，并且包括铁磁层。 第一端子连接到磁化记录层中的第一区域的一端。 第二端子连接到第一区域的另一端。 非磁性层布置在第一区域上。 磁化钉扎层布置在非磁性层上并且位于与第一区域相对的一侧上。 磁化记录层包括：位于磁化记录层中的第一端子外部的第一延伸部分; 以及布置在第一延伸部分中并且实质上改变磁化记录层的磁化转换特性的性质改变结构。

    Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memory
    78.
    发明授权
    Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memory 有权
    磁存储单元，磁随机存取存储器以及用于磁随机存取存储器的数据读/写方法

    公开(公告)号：US07929342B2

    公开(公告)日：2011-04-19

    申请号：US11996711

    申请日：2006-08-04

    申请人： Hideaki Numata ,  Norikazu Ohshima ,  Tetsuhiro Suzuki ,  Tadahiko Sugibayashi ,  Nobuyuki Ishiwata ,  Shunsuke Fukami

    发明人： Hideaki Numata ,  Norikazu Ohshima ,  Tetsuhiro Suzuki ,  Tadahiko Sugibayashi ,  Nobuyuki Ishiwata ,  Shunsuke Fukami

    IPC分类号： G11C11/14

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  H01L27/228

    摘要： The present invention provides a new data writing method for an MRAM which can suppress deterioration of a tunnel barrier layer.A magnetic memory cell 1 has a magnetic recording layer 10 and a pinned layer 30 connected to the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 includes a magnetization switching region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization switching region 13 has reversible magnetization and faces the pinned layer 30. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization direction is fixed to a first direction. The second magnetization fixed region 12 is connected to a second boundary B2 of the magnetization switching region 13 and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching region 13 or away from the magnetization switching region 13.

    摘要翻译： 本发明提供了一种能够抑制隧道势垒层劣化的MRAM的新数据写入方法。 磁存储单元1具有通过非磁性层20连接到磁记录层10的磁记录层10和钉扎层30.磁记录层10包括磁化切换区13，第一磁化固定区11和 第二磁化固定区域12.磁化切换区域13具有可逆磁化并面向被钉扎层30.第一磁化固定区域11连接到磁化转换区域13的第一边界B1，并且其磁化方向被固定到第一磁化固定区域 方向。 第二磁化固定区域12与磁化切换区域13的第二边界B2连接，其磁化方向固定在第二方向。 第一方向和第二方向都朝向磁化开关区域13或远离磁化开关区域13。

    SEMICONDUCTOR DEVICE
    79.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20110002163A1

    公开(公告)日：2011-01-06

    申请号：US12920194

    申请日：2009-03-05

    申请人： Shunsuke Fukami ,  Nobuyuki Ishiwata ,  Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Kiyokazu Nagahara

    发明人： Shunsuke Fukami ,  Nobuyuki Ishiwata ,  Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Kiyokazu Nagahara

    IPC分类号： G11C11/15

    CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808

    摘要： A semiconductor device includes: a first magnetic random access memory including a first memory cell and a second magnetic random access memory including a second memory cell operating at higher speed than the first memory cell and is provided on the same chip together with the first magnetic random access memory. The first memory cell is a current-induced domain wall motion type MRAM and stores data based on a domain wall position of a magnetization free layer. A layer that a write current flows is different from a layer that a read current flows. The second memory cell is a current-induced magnetic field writing type MRAM and stores data based on a magnetic field induced by a write current.

    摘要翻译： 半导体器件包括：第一磁性随机存取存储器，包括第一存储单元和第二磁性随机存取存储器，所述第二磁性随机存取存储器包括以比第一存储单元更高的速度工作的第二存储单元，并且与第一磁性随机 访问内存 第一存储单元是电流感应畴壁运动型MRAM，并存储基于无磁化层的畴壁位置的数据。 写入电流流动的层与读取电流流动的层不同。 第二存储单元是电流感应磁场写入型MRAM，并存储基于由写入电流引起的磁场的数据。

    Magnetoresistance element magnetic random access memory, magnetic head and magnetic storage device
    80.
    发明授权
    Magnetoresistance element magnetic random access memory, magnetic head and magnetic storage device 有权
    磁阻元件磁性随机存取存储器，磁头和磁存储器件

    公开(公告)号：US07855860B2

    公开(公告)日：2010-12-21

    申请号：US11632387

    申请日：2005-06-30

    申请人： Nobuyuki Ishiwata

    发明人： Nobuyuki Ishiwata

    IPC分类号： G11B5/39 ,  G11C11/02

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3929 ,  G11B2005/3996 ,  G11C11/16 ,  H01F10/13 ,  H01F10/3204 ,  H01F10/3254 ,  H01F41/302 ,  H01L27/228 ,  H01L43/10

    摘要： A magnetoresistance element includes an antiferromagnetic layer, a fixed ferromagnetic layer, a first nonmagnetic layer and a free ferromagnetic layer. The antiferromagnetic layer is formed on the upper surface side of a substrate. The fixed ferromagnetic layer is formed on the antiferromagnetic layer. The first nonmagnetic layer is formed on the fixed ferromagnetic layer. The free ferromagnetic layer is formed on the first nonmagnetic layer. The fixed ferromagnetic layer is provided with an amorphous layer. The amorphous layer contains amorphous material having a composition expressed by a chemical formula of X—Y—N. X is an element selected from Co, Fe and Ni. Y is an element selected from AI, Si, Mg, Ta, Nb, Zr, Hf, W, Mo, Ti and V. N represents nitrogen.

    摘要翻译： 磁阻元件包括反铁磁层，固定铁磁层，第一非磁性层和自由铁磁层。 反铁磁性层形成在基板的上表面侧。 固定铁磁层形成在反铁磁层上。 第一非磁性层形成在固定的铁磁层上。 自由铁磁层形成在第一非磁性层上。 固定铁磁层设置有非晶层。 非晶层含有由化学式X-Y-N表示的组成的无定形材料。 X是选自Co，Fe和Ni的元素。 Y是选自Al，Si，Mg，Ta，Nb，Zr，Hf，W，Mo，Ti和V的元素.N代表氮。