公开(公告)号：US20160125969A1

公开(公告)日：2016-05-05

申请号：US14993395

申请日：2016-01-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Tetsunori MARUYAMA ,  Takayuki SAITO ,  Yuki IMOTO ,  Noriaki UTO ,  Yuta ENDO ,  Hitomi SHIONOYA ,  Takuya HIROHASHI ,  Shunpei YAMAZAKI

IPC: H01B1/02

CPC classification number: H01B1/02 ,  C23C14/0676 ,  C23C14/3414 ,  C23C14/541 ,  C23C14/5806

Abstract: An object is to provide a transparent conductive film having favorable transparency and conductivity at low cost. Another object is to reduce the resistivity of a transparent conductive film formed using conductive oxynitride including zinc and aluminum. Another object is to provide a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum. When aluminum and nitrogen are made to be included in a transparent conductive film formed using oxide including zinc to form a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum, the transparent conductive film can have reduced resistivity. Heat treatment after the formation of the transparent conductive film that is formed using conductive oxynitride including zinc and aluminum enables reduction in resistivity of the transparent conductive film.

Abstract translation: 本发明的目的是提供一种透明导电膜，其具有良好的透明性和低导电性。 另一个目的是降低使用包括锌和铝的导电氮氧化物形成的透明导电膜的电阻率。 另一个目的是提供使用包括锌和铝的导电氮氧化物形成的透明导电膜。 当使用包含锌的氧化物形成的透明导电膜中包含铝和氮以形成使用包括锌和铝的导电氮氧化物形成的透明导电膜时，透明导电膜可以具有降低的电阻率。 在形成使用包括锌和铝的导电氮氧化物形成的透明导电膜之后的热处理使得能够降低透明导电膜的电阻率。

公开(公告)号：US20150372146A1

公开(公告)日：2015-12-24

申请号：US14741961

申请日：2015-06-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideaki SHISHIDO ,  Satoru SAITO ,  Yukinori SHIMA ,  Daisuke KUROSAKI ,  Junichi KOEZUKA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/04 ,  H01L29/24 ,  H01L29/06

CPC classification number: H01L29/7869 ,  H01L29/04 ,  H01L29/0692 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696

Abstract: A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor film, a first gate electrode, a second gate electrode, a first conductive film, and a second conductive film. The first gate electrode is electrically connected to the second gate electrode. The first conductive film and the second conductive film function as a source electrode and a drain electrode. The oxide semiconductor film includes a first region that overlaps with the first conductive film, a second region that overlaps with the second conductive film, and a third region that overlaps with a gate electrode and the third conductive film. The first region includes a first edge that is opposed to the second region. The second region includes a second edge that is opposed to the first region. The length of the first edge is shorter than the length of the second edge.

Abstract translation: 提供具有稳定电特性的半导体器件。 半导体器件包括氧化物半导体膜，第一栅电极，第二栅电极，第一导电膜和第二导电膜。 第一栅电极电连接到第二栅电极。 第一导电膜和第二导电膜用作源电极和漏电极。 氧化物半导体膜包括与第一导电膜重叠的第一区域，与第二导电膜重叠的第二区域和与栅电极和第三导电膜重叠的第三区域。 第一区域包括与第二区域相对的第一边缘。 第二区域包括与第一区域相对的第二边缘。 第一边缘的长度短于第二边缘的长度。

公开(公告)号：US20150171196A1

公开(公告)日：2015-06-18

申请号：US14632081

申请日：2015-02-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Naoto YAMADE ,  Yuhei SATO ,  Yutaka OKAZAKI ,  Shunpei YAMAZAKI

IPC: H01L29/66 ,  H01L21/383 ,  H01L21/44 ,  H01L21/477

CPC classification number: H01L27/1274 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02667 ,  H01L21/383 ,  H01L21/44 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.

Abstract translation: 使用氧化物半导体的半导体器件具有稳定的电特性以提高可靠性。 在包括氧化物半导体膜的晶体管的制造工艺中，形成含有基本上垂直于其顶表面的c轴的晶体（也称为第一晶体氧化物半导体膜）的氧化物半导体膜; 氧化物被添加到氧化物半导体膜中以使至少部分氧化物半导体膜非晶化，从而形成含有过量氧的非晶氧化物半导体膜; 在非晶氧化物半导体膜上形成氧化铝膜; 在其上进行热处理以使非晶氧化物半导体膜的至少一部分结晶，使得含有具有基本上垂直于其顶表面的c轴的晶体的氧化物半导体膜（也称为第二结晶氧化物半导体膜 ） 形成了。

公开(公告)号：US20150102341A1

公开(公告)日：2015-04-16

申请号：US14505004

申请日：2014-10-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Junichi KOEZUKA ,  Yukinori SHIMA ,  Masahiko HAYAKAWA ,  Takashi HAMOCHI ,  Suzunosuke HIRAISHI

IPC: H01L29/786 ,  H01L29/24

CPC classification number: H01L21/477 ,  H01L21/02112 ,  H01L21/02403 ,  H01L21/28 ,  H01L29/24 ,  H01L29/78606 ,  H01L29/7869

Abstract: To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.

Abstract translation: 为了抑制电特性的改变，并提高使用包括氧化物半导体的晶体管的半导体器件的可靠性。 半导体器件包括绝缘表面上的栅电极，与栅电极重叠的氧化物半导体膜，位于栅电极和氧化物半导体膜之间并与氧化物半导体膜的表面接触的栅极绝缘膜， 与氧化物半导体膜的表面的相对表面接触的保护膜和与氧化物半导体膜接触的一对电极。 在栅极绝缘膜或保护膜中，通过热处理释放的质荷比为m / z为17的气体的量比通过热处理释放的氮氧化物的量大。

公开(公告)号：US20150037932A1

公开(公告)日：2015-02-05

申请号：US14459597

申请日：2014-08-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Atsuo ISOBE ,  Toshihiko SAITO ,  Takehisa HATANO ,  Hideomi SUZAWA ,  Shinya SASAGAWA ,  Junichi KOEZUKA ,  Yuichi SATO ,  Shinji OHNO

IPC: H01L29/66 ,  H01L21/02

CPC classification number: H01L29/66969 ,  H01L21/02488 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/786 ,  H01L29/78606 ,  H01L29/7869

Abstract: A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film.

Abstract translation: 提供了包括氧化物半导体并且具有良好的电特性的半导体器件。 在半导体器件中，在衬底上形成氧化物半导体膜和绝缘膜。 氧化物半导体膜的侧面与绝缘膜接触。 氧化物半导体膜包括沟道形成区域和包含掺杂剂的区域，沟道形成区域夹在其间。 栅极绝缘膜与氧化物半导体膜形成并接触。 在栅绝缘膜上形成具有侧壁绝缘膜的栅电极。 源电极和漏电极形成为与氧化物半导体膜和绝缘膜接触。

公开(公告)号：US20140306221A1

公开(公告)日：2014-10-16

申请号：US14247676

申请日：2014-04-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Yasutaka NAKAZAWA ,  Yukinori SHIMA ,  Masami JINTYOU ,  Masayuki SAKAKURA ,  Motoki NAKASHIMA

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1229 ,  H01L29/04 ,  H01L29/045 ,  H01L29/7869 ,  H01L29/78696

Abstract: The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.

Abstract translation: 处理使用铜，铝，金，银，钼等形成的布线的步骤的稳定性增加。 此外，半导体膜中的杂质浓度降低。 此外，提高了半导体器件的电特性。 在包括氧化物半导体膜，与氧化物半导体膜接触的氧化物膜和与氧化膜接触并包括铜，铝，金，银，钼等的一对导电膜的晶体管中， 氧化物膜具有多个晶体部分，并且在晶体部分中具有c轴取向，并且c轴在与氧化物半导体膜或氧化物膜的顶表面的法向量平行的方向上排列。

公开(公告)号：US20140299876A1

公开(公告)日：2014-10-09

申请号：US14311791

申请日：2014-06-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Naoto YAMADE ,  Junichi KOEZUKA

IPC: H01L29/786

CPC classification number: H01L29/78693 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/12 ,  H01L29/04 ,  H01L29/10 ,  H01L29/7869

Abstract: A semiconductor device which is miniaturized and has sufficient electrical characteristics to function as a transistor is provided. In a semiconductor device including a transistor in which a semiconductor layer, a gate insulating layer, and a gate electrode layer are stacked in that order, an oxide semiconductor film which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and in which the percentage of the indium is twice or more as large as each of the percentage of the gallium and the percentage of the zinc when the composition of the four elements is expressed in atomic percentage is used as the semiconductor layer. In the semiconductor device, the oxide semiconductor film is a film to which oxygen is introduced in the manufacturing process and contains a large amount of oxygen, and an insulating layer including an aluminum oxide film is provided to cover the transistor.

Abstract translation: 提供小型化并具有足够的电特性用作晶体管的半导体器件。 在包括半导体层，栅极绝缘层和栅极电极层的晶体管的半导体器件中，依次包含铟，镓，锌和氧中的至少四种元素的氧化物半导体膜 ，并且其中当四种元素的组成以原子百分比表示时，铟的百分比是镓的百分比和锌的百分比的两倍或更多，而作为半导体层。 在半导体器件中，氧化物半导体膜是在制造过程中引入氧并含有大量氧的膜，并且提供包括氧化铝膜的绝缘层以覆盖晶体管。

公开(公告)号：US20140209899A1

公开(公告)日：2014-07-31

申请号：US14227231

申请日：2014-03-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Shinji OHNO ,  Yuichi SATO ,  Junichi KOEZUKA ,  Sachiaki TEZUKA

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225

Abstract: To provide an oxide semiconductor film including a low-resistance region, which can be applied to a transistor. To provide a transistor including the oxide semiconductor film, which can perform at high speed. To provide a high-performance semiconductor device including the transistor including the oxide semiconductor film, which can perform at high speed, with high yield. A film having a reducing property is formed over the oxide semiconductor film. Next, part of oxygen atoms are transferred from the oxide semiconductor film to the film having a reducing property. Next, an impurity is added to the oxide semiconductor film through the film having a reducing property and then, the film having a reducing property is removed, so that a low-resistance region is formed in the oxide semiconductor film.

Abstract translation: 提供一种可以应用于晶体管的包含低电阻区域的氧化物半导体膜。 提供可以高速执行的包括氧化物半导体膜的晶体管。 提供一种高性能半导体器件，其包括能够以高产率高速执行的包括氧化物半导体膜的晶体管。 在氧化物半导体膜上形成具有还原性的膜。 接下来，氧原子的一部分从氧化物半导体膜转移到具有还原性的膜。 接下来，通过具有还原性的膜向氧化物半导体膜添加杂质，然后去除具有还原性的膜，从而在氧化物半导体膜中形成低电阻区域。

公开(公告)号：US20140127868A1

公开(公告)日：2014-05-08

申请号：US14151036

申请日：2014-01-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshihiko SAITO ,  Atsuo ISOBE ,  Kazuya HANAOKA ,  Junichi KOEZUKA ,  Shinya SASAGAWA ,  Motomu KURATA ,  Akihiro ISHIZUKA

IPC: H01L29/66

CPC classification number: H01L29/66477 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: A miniaturized transistor is provided with high yield. Further, a semiconductor device which has high on-state characteristics and which is capable of high-speed response and high-speed operation is provided. In the semiconductor device, an oxide semiconductor layer, a gate insulating layer, a gate electrode layer, an insulating layer, a conductive film, and an interlayer insulating layer are stacked in this order. A source electrode layer and a drain electrode layer are formed in a self-aligned manner by cutting the conductive film so that the conductive film over the gate electrode layer and the conductive layer is removed and the conductive film is divided. An electrode layer which is in contact with the oxide semiconductor layer and overlaps with a region in contact with the source electrode layer and the drain electrode layer is provided.

Abstract translation: 提供了一种小型化的晶体管，其产率高。 此外，提供了具有高导通状态特性并且能够进行高速响应和高速操作的半导体器件。 在半导体装置中，依次层叠氧化物半导体层，栅极绝缘层，栅极电极层，绝缘层，导电膜和层间绝缘层。 通过切割导电膜以自对准的方式形成源电极层和漏电极层，从而去除栅极电极层和导电层上的导电膜，并且导电膜被分割。 设置与氧化物半导体层接触并与与源极电极层和漏极电极层接触的区域重叠的电极层。

公开(公告)号：US20140001467A1

公开(公告)日：2014-01-02

申请号：US13922693

申请日：2013-06-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Toshinari SASAKI ,  Takashi HAMOCHI ,  Toshiyuki MIYAMOTO ,  Masafumi NOMURA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI

IPC: H01L29/786

CPC classification number: H01L29/7869

Abstract: To provide a semiconductor device including an oxide semiconductor in which a change in electrical characteristics is suppressed or whose reliability is improved. In a semiconductor device including an oxide semiconductor film in which a channel formation region is formed, an insulating film which suppresses entry of water and contains at least nitrogen and an insulating film which suppresses entry of nitrogen released form the insulating film are provided over the oxide semiconductor film. As water entering the oxide semiconductor film, water contained in the air, water in a film provided over the insulating film which suppresses entry of water, or the like can be given. Further, as the insulating film which suppresses entry of water, a nitride insulating film can be used, and the amount of hydrogen molecules released by heating from the nitride insulating film is smaller than 5.0×1021 molecules/cm3.

Abstract translation: 提供一种包括氧化物半导体的半导体器件，其中电特性的变化被抑制或其可靠性提高。 在包括其中形成沟道形成区域的氧化物半导体膜的半导体器件中，在氧化物上设置绝缘膜，其抑制水的入口并且至少包含氮和绝缘膜，所述绝缘膜抑制从绝缘膜释放的氮的进入 半导体膜。 当进入氧化物半导体膜的水中，可以给出包含在空气中的水，设置在绝缘膜上的膜中的水，以抑制水的进入等。 此外，作为抑制水的侵入的绝缘膜，可以使用氮化物绝缘膜，通过加热从氮化物绝缘膜释放的氢分子的量小于5.0×1021分子/ cm 3。