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公开(公告)号：US20200052499A1
公开(公告)日：2020-02-13
申请号：US16658194
申请日：2019-10-21
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Minoru TAKAHASHI , Junpei MOMO , Hiroyuki MIYAKE , Kei TAKAHASHI
Abstract: A lithium ion secondary battery includes a positive electrode including a positive electrode active material layer containing lithium iron phosphate, a negative electrode including a negative electrode active material layer containing graphite, and an electrolyte including a lithium salt and a solvent including ethylene carbonate and diethyl carbonate between the positive electrode and the negative electrode. When the battery temperature of the lithium ion secondary battery or the temperature of an environment in which the lithium ion secondary battery is used is T and given temperatures are T1 and T2 (T1
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公开(公告)号：US20190392914A1
公开(公告)日：2019-12-26
申请号：US16458304
申请日：2019-07-01
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Seiko AMANO , Kouhei TOYOTAKA , Hiroyuki MIYAKE , Aya MIYAZAKI , Hideaki SHISHIDO , Koji KUSUNOKI
Abstract: An object is to provide a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit. A pulse signal output circuit according to one embodiment of the disclosed invention includes first to tenth transistors. The ratio W/L of the channel width W to the channel length L of the first transistor and W/L of the third transistor are each larger than W/L of the sixth transistor. W/L of the fifth transistor is larger than W/L of the sixth transistor. W/L of the fifth transistor is equal to W/L of the seventh transistor. W/L of the third transistor is larger than W/L of the fourth transistor. With such a structure, a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit can be provided.
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公开(公告)号：US20180308558A1
公开(公告)日：2018-10-25
申请号：US16017181
申请日：2018-06-25
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Masayuki SAKAKURA , Yuugo GOTO , Hiroyuki MIYAKE , Daisuke KUROSAKI
CPC classification number: G11C19/184 , G09G2310/0275 , G09G2310/0286 , H01L27/0248 , H01L27/1222 , H01L27/1225 , H01L27/124
Abstract: A semiconductor device in which a decrease in the yield by electrostatic destruction can be prevented is provided. A scan line driver circuit for supplying a signal for selecting a plurality of pixels to a scan line includes a shift register for generating the signal. One conductive film functioning as respective gate electrodes of a plurality of transistors in the shift register is divided into a plurality of conductive films. The divided conductive films are electrically connected to each other by a conductive film which is formed in a layer different from the divided conductive films are formed. The plurality of transistors includes a transistor on an output side of the shift register.
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公开(公告)号：US20180234090A1
公开(公告)日：2018-08-16
申请号：US15946122
申请日：2018-04-05
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Hiroyuki MIYAKE , Kei TAKAHASHI
IPC: H03K17/16 , H01L27/088 , G09G3/36
CPC classification number: H03K17/162 , G09G3/3648 , G09G3/3677 , G09G2300/0408 , G09G2300/0819 , G09G2310/0286 , G09G2310/0289 , G09G2320/043 , G09G2320/045 , G11C19/28 , G11C19/285 , H01L27/088 , H01L27/1288 , H01L29/04 , H01L29/78696 , H03K17/687
Abstract: An object of the present invention is to suppress deterioration in the thin film transistor. A plurality of pulse output circuits each include first to eleventh thin film transistors is formed. The pulse output circuit is operated on the basis of a plurality of clock signals which control each transistor, the previous stage signal input from a pulse output circuit in the previous stage, the next stage signal input from a pulse output circuit in the next stage, and a reset signal. In addition, a microcrystalline semiconductor is used for a semiconductor layer serving as a channel region of each transistor. Therefore, degradation of characteristics of the transistor can be suppressed.
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公开(公告)号：US20180113547A1
公开(公告)日：2018-04-26
申请号：US15784550
申请日：2017-10-16
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Hiroyuki MIYAKE , Takahiro FUKUTOME
IPC: G06F3/041 , G06F3/044 , G06F3/045 , G06F3/047 , G02F1/1333
CPC classification number: G06F3/0412 , G02F1/13338 , G06F3/0416 , G06F3/044 , G06F3/045 , G06F3/047 , G06F2203/04104
Abstract: Sensing time of a touch sensor is shortened to increase responsiveness of touch sensing. A display device includes a gate driver, a plurality of touch sensors, and a plurality of touch wirings. The gate driver has a function of supplying a scan signal to the plurality of touch wirings at the same timing, and the touch sensors in different positions sense a plurality of touches at the same timing. In this manner, the responsiveness of touch sensing is increased. The gate driver has a function of controlling a scan signal for refreshing display and a scan signal used by the touch sensor for sensing.
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Patent Agency Ranking
76.发明申请公开(公告)号：US20180018918A1
公开(公告)日：2018-01-18
申请号：US15643702
申请日：2017-07-07
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Hiroyuki MIYAKE
CPC classification number: G09G3/3233 , G06F3/041 , G06F3/044 , G06F2203/04102 , G09G3/3266 , G09G3/3426 , G09G3/36 , G09G3/3648 , G09G3/3677 , G09G2300/0819 , G09G2300/0842 , G09G2320/0233 , G09G2320/0247 , G09G2320/0252 , G09G2320/0257 , G09G2320/045 , G09G2320/064 , G09G2330/021 , G09G2340/0407
Abstract: Control of a light emission period of a light-emitting element results in higher visibility. A display device includes a signal line, a first scan line, a second scan line, and a pixel circuit. The pixel circuit includes a light-emitting element, a first transistor, a second transistor, a third transistor, and a capacitor. The second transistor is turned on by application of voltage that is lower than voltage applied to the first scan line to the second scan line after the second transistor is turned off by second voltage. Thus, a gate of the third transistor is controlled by the voltage applied to the second scan line. The display device has a function of controlling the light emission period by turning off the third transistor by the second scan line.
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公开(公告)号：US20170338470A1
公开(公告)日：2017-11-23
申请号：US15535596
申请日：2015-12-16
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Nobuhiro INOUE , Hiroyuki MIYAKE , Yuika SATO
CPC classification number: H01M4/364 , H01M4/0404 , H01M4/0459 , H01M4/0461 , H01M4/134 , H01M4/1395 , H01M4/386 , H01M4/483 , H01M4/505 , H01M4/525 , H01M4/5825 , H01M4/62 , H01M10/052 , H01M10/0525 , H01M2004/027 , Y02T10/7011
Abstract: Although a material containing silicon attracts attention as a high-capacity negative electrode active material, it has a problem of having a large irreversible capacity at the initial charge and discharge cycle.As a negative electrode active material, a particle which is a mixture of silicon, lithium metasilicate, and lithium oxide is used. Because lithium metasilicate and lithium oxide are already contained in the particle of the negative electrode active material, a compound containing lithium and oxygen (lithium orthosilicate and lithium metasilicate), which is a cause of the irreversible capacity at the initial charge, is not generated any more. This enables a negative electrode active material with a small irreversible capacity.
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公开(公告)号：US20170309650A1
公开(公告)日：2017-10-26
申请号：US15645251
申请日：2017-07-10
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Hiroyuki MIYAKE , Kenichi OKAZAKI , Masahiko HAYAKAWA , Shinpei MATSUDA
IPC: H01L27/12 , H01L29/786 , G02F1/1343 , G02F1/1368
CPC classification number: H01L27/1225 , G02F1/134309 , G02F1/1368 , H01L27/1237 , H01L27/124 , H01L29/78648 , H01L29/7869 , H01L29/78696
Abstract: A semiconductor device which includes an oxide semiconductor and in which formation of a parasitic channel due to a gate BT stress is suppressed is provided. Further, a semiconductor device including a transistor having excellent electrical characteristics is provided. The semiconductor device includes a transistor having a dual-gate structure in which an oxide semiconductor film is provided between a first gate electrode and a second gate electrode; gate insulating films are provided between the oxide semiconductor film and the first gate electrode and between the oxide semiconductor film and the second gate electrode; and in the channel width direction of the transistor, the first or second gate electrode faces a side surface of the oxide semiconductor film with the gate insulating film between the oxide semiconductor film and the first or second gate electrode.
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公开(公告)号：US20170294170A1
公开(公告)日：2017-10-12
申请号：US15475617
申请日：2017-03-31
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Hiroyuki MIYAKE , Yoshiharu HIRAKATA
IPC: G09G3/36 , G02F1/1333 , G02F1/1368 , G02F1/1343 , G02F1/1362 , G02F1/1335
CPC classification number: G09G3/3614 , G02F1/133345 , G02F1/133512 , G02F1/133514 , G02F1/134309 , G02F1/136213 , G02F1/136286 , G02F1/1368 , G02F2201/121 , G02F2201/123 , G02F2201/40 , G02F2202/10 , G09G3/3648 , G09G2330/023 , H01L27/1225
Abstract: A liquid crystal display device whose power consumption is reduced while image quality is prevented from being degraded is provided. Further, a method for driving a liquid crystal display device whose power consumption is reduced while image quality is prevented from being degraded is provided. The liquid crystal display device includes a transistor whose leakage current in an off state is reduced and a liquid crystal element. The capacitance of a pixel satisfies the formula (1) and the formula (2).
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公开(公告)号：US20170250201A1
公开(公告)日：2017-08-31
申请号：US15592599
申请日：2017-05-11
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Jun KOYAMA , Hiroyuki MIYAKE
IPC: H01L27/12 , H01L29/786
CPC classification number: H01L27/1225 , H01L21/02603 , H01L27/0883 , H01L27/1251 , H01L27/127 , H01L27/1288 , H01L29/045 , H01L29/24 , H01L29/7869 , H01L29/78693 , H01L29/78696
Abstract: An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.
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