公开(公告)号：US20170271421A1

公开(公告)日：2017-09-21

申请号：US15456887

申请日：2017-03-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuhiro JINBO ,  Kohei YOKOYAMA ,  Yuki TAMATSUKURI ,  Naoto GOTO ,  Masami JINTYOU ,  Masayoshi DOBASHI ,  Masataka NAKADA ,  Akihiro CHIDA ,  Naoyuki SENDA

IPC: H01L27/32

CPC classification number: H01L27/3258 ,  H01L51/5253 ,  H01L2251/301 ,  H01L2251/5338

Abstract: To provide a display device with a manufacturing yield and/or a display device with suppressed mixture of colors between adjacent pixels. The display device includes a first pixel electrode, a second pixel electrode, a first insulating layer, a second insulating layer, and an adhesive layer. The first insulating layer includes a first opening. The second insulating layer includes a second opening. The first opening and the second opening are provided between the first pixel electrode and the second pixel electrode. In a top view, a periphery of the second opening is positioned on an inner side than a periphery of the first opening. The adhesive layer has a region overlapping with the second insulating layer below the second insulating layer.

公开(公告)号：US20170263783A1

公开(公告)日：2017-09-14

申请号：US15451804

申请日：2017-03-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Masami JINTYOU ,  Yukinori SHIMA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L21/02 ,  H01L29/24 ,  H01L29/04

CPC classification number: H01L29/78696 ,  G02F1/13338 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2201/123 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78621 ,  H01L29/7869 ,  H01L29/78693

Abstract: To improve field-effect mobility and reliability of a transistor including an oxide semiconductor film. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, the oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The oxide semiconductor film includes a first oxide semiconductor film, a second oxide semiconductor film over the first oxide semiconductor film, and a third oxide semiconductor film over the second oxide semiconductor film. The first to third oxide semiconductor films contain the same element. The second oxide semiconductor film includes a region where the crystallinity is lower than the crystallinity of one or both of the first oxide semiconductor film and the third oxide semiconductor film.

公开(公告)号：US20170256648A1

公开(公告)日：2017-09-07

申请号：US15597297

申请日：2017-05-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Daisuke KUROSAKI

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/26

CPC classification number: H01L29/78606 ,  H01L29/26 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869

Abstract: A semiconductor device including a transistor is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, a second insulating film over the first insulating film, an oxide semiconductor film over the second insulating film, a source electrode and a drain electrode electrically connected to the oxide semiconductor film, a third insulating film over the source electrode, and a fourth insulating film over the drain electrode. A fifth insulating film including oxygen is provided over the transistor. The third insulating film includes a first portion, the fourth insulating film includes a second portion, and the fifth insulating film includes a third portion. The amount of oxygen molecules released from each of the first portion and the second portion is smaller than the amount of oxygen molecules released from the third portion when the amounts are measured by thermal desorption spectroscopy.

公开(公告)号：US20170162718A1

公开(公告)日：2017-06-08

申请号：US15439997

申请日：2017-02-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasutaka NAKAZAWA ,  Masami JINTYOU ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Takuya HIROHASHI ,  Shunsuke ADACHI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L21/32051 ,  H01L21/3213 ,  H01L21/473 ,  H01L21/4757 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: A semiconductor device including a transistor having a reduced number of oxygen vacancies in a channel formation region of an oxide semiconductor with stable electrical characteristics or high reliability is provided. A gate insulating film is formed over a gate electrode; an oxide semiconductor layer is formed over the gate insulating film; an oxide layer is formed over the oxide semiconductor layer by a sputtering method to form an stacked-layer oxide film including the oxide semiconductor layer and the oxide layer; the stacked-layer oxide film is processed into a predetermined shape; a conductive film containing Ti as a main component is formed over the stacked-layer oxide film; the conductive film is etched to form source and drain electrodes and a depression portion on a back channel side; and portions of the stacked-layer oxide film in contact with the source and drain electrodes are changed to an n-type by heat treatment.

公开(公告)号：US20170162716A1

公开(公告)日：2017-06-08

申请号：US15434153

申请日：2017-02-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Takashi HAMOCHI ,  Yasutaka NAKAZAWA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24

CPC classification number: H01L29/78696 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/7869 ,  H01L2029/7863

Abstract: A novel semiconductor device including an oxide semiconductor is provided. In particular, a planar semiconductor device including an oxide semiconductor is provided. A semiconductor device including an oxide semiconductor and having large on-state current is provided. The semiconductor device includes an oxide insulating film, an oxide semiconductor film over the oxide insulating film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a gate insulating film between the source electrode and the drain electrode, and a gate electrode overlapping the oxide semiconductor film with the gate insulating film. The oxide semiconductor film includes a first region overlapped with the gate electrode and a second region not overlapped with the gate electrode, the source electrode, and the drain electrode. The first region and the second region have different impurity element concentrations. The gate electrode, the source electrode, and the drain electrode contain the same metal element.

公开(公告)号：US20170104090A1

公开(公告)日：2017-04-13

申请号：US15287085

申请日：2016-10-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Yasuharu HOSAKA ,  Yasutaka NAKAZAWA ,  Takashi HAMOCHI ,  Takahiro SATO ,  Shunpei YAMAZAKI

IPC: H01L29/66 ,  H01L27/146 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02

CPC classification number: H01L29/66969 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/133528 ,  G02F1/1337 ,  G02F1/1339 ,  G02F1/13394 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133541 ,  G02F2201/121 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04103 ,  G06F2203/04108 ,  G09G3/20 ,  G09G3/2003 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0426 ,  G09G2300/0452 ,  G09G2330/021 ,  G09G2330/028 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/14616 ,  H01L29/4908 ,  H01L29/78633 ,  H01L29/78648 ,  H01L29/7869

Abstract: Variation in electrical characteristics of a semiconductor device including an oxide semiconductor is inhibited and the reliability thereof is improved. The oxide semiconductor is formed over a substrate. An insulator is formed over the oxide semiconductor. A metal oxide is formed over the insulator. A conductor is formed over the metal oxide. The conductor, the metal oxide, and the insulator over the oxide semiconductor are removed to expose a portion of the oxide semiconductor. Plasma treatment is performed on a surface of the exposed portion of the oxide semiconductor. A nitride insulator is formed over the exposed portion of the oxide semiconductor and the conductor.

公开(公告)号：US20170054029A1

公开(公告)日：2017-02-23

申请号：US15231061

申请日：2016-08-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Daisuke KUROSAKI ,  Yukinori SHIMA ,  Toshimitsu OBONAI

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02653 ,  H01L29/66969

Abstract: A method for manufacturing a semiconductor device has a first step including a step of forming an oxide semiconductor film, a second step including a step of forming a gate insulating film over the oxide semiconductor film and a step of forming a gate electrode over the gate insulating film, a third step including a step of forming a nitride insulating film over the oxide semiconductor film and the gate electrode, a fourth step including a step of forming an oxide insulating film over the nitride insulating film, a fifth step including a step of forming an opening in the nitride insulating film and the oxide insulating film, and a sixth step including a step of forming source and drain electrodes over the oxide insulating film so as to cover the opening. In the third step, the nitride insulating film is formed through at least two steps: plasma treatment and deposition treatment. The two steps are each performed at a temperature higher than or equal to 150° C. and lower than 300° C.

Abstract translation: 一种半导体器件的制造方法具有：第一工序，包括形成氧化物半导体膜的工序;第二工序，包括在所述氧化物半导体膜上形成栅极绝缘膜的步骤;以及在所述栅极绝缘上形成栅电极的工序; 薄膜，第三步骤，包括在所述氧化物半导体膜和所述栅电极上形成氮化物绝缘膜的步骤，第四步骤，包括在所述氮化物绝缘膜上形成氧化物绝缘膜的步骤，第五步骤，包括形成步骤 氮化物绝缘膜和氧化物绝缘膜中的开口，以及第六步骤，包括在氧化物绝缘膜上形成源极和漏极以便覆盖开口的步骤。 在第三步骤中，通过至少两个步骤形成氮化物绝缘膜：等离子体处理和沉积处理。 两个步骤各自在高于或等于150℃并低于300℃的温度下进行。

公开(公告)号：US20170033238A1

公开(公告)日：2017-02-02

申请号：US15226051

申请日：2016-08-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Daisuke KUROSAKI ,  Masataka NAKADA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78693 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. Furthermore, the first transistor provided in the driver circuit portion may include the oxide semiconductor film in which a first film and a second film are stacked, and the second transistor provided in the pixel portion may include the oxide semiconductor film which differs from the first film in the atomic ratio of metal elements.

Abstract translation: 该半导体器件包括设置在驱动电路部分中的第一晶体管和设置在像素部分中的第二晶体管; 第一晶体管和第二晶体管具有不同的结构。 在每个晶体管的氧化物半导体膜中，杂质元素包含在不与栅电极重叠的区域中。 含有杂质元素的氧化物半导体膜的区域用作低电阻区域。 此外，含有杂质元素的氧化物半导体膜的区域与含有氢的膜接触。 此外，设置在驱动器电路部分中的第一晶体管可以包括堆叠第一膜和第二膜的氧化物半导体膜，并且设置在像素部分中的第二晶体管可以包括与第一膜不同的氧化物半导体膜 以金属元素的原子比计。

公开(公告)号：US20160284860A1

公开(公告)日：2016-09-29

申请号：US15174197

申请日：2016-06-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Noritaka ISHIHARA ,  Masashi OOTA ,  Masashi TSUBUKU ,  Masami JINTYOU ,  Yukinori SHIMA ,  Junichi KOEZUKA ,  Yasuharu HOSAKA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/45 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

Abstract: Defects in an oxide semiconductor film are reduced in a semiconductor device including the oxide semiconductor film. The electrical characteristics of a semiconductor device including an oxide semiconductor film are improved. The reliability of a semiconductor device including an oxide semiconductor film is improved. A semiconductor device including an oxide semiconductor layer; a metal oxide layer in contact with the oxide semiconductor layer, the metal oxide layer including an In-M oxide (M is Ti, Ga, Y, Zr, La, Ce, Nd, or Hf); and a conductive layer in contact with the metal oxide layer, the conductive layer including copper, aluminum, gold, or silver is provided. In the semiconductor device, y/(x+y) is greater than or equal to 0.75 and less than 1 where the atomic ratio of In to M included in the metal oxide layer is In:M=x:y.

公开(公告)号：US20160225795A1

公开(公告)日：2016-08-04

申请号：US15010392

申请日：2016-01-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Daisuke KUROSAKI ,  Masami JINTYOU ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/04 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1248 ,  H01L27/127 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A method for manufacturing a highly reliable semiconductor device is provided. The method includes the steps of: forming an oxide semiconductor film at a first temperature; processing the oxide semiconductor film into an island shape; not performing a process at a temperature higher than the first temperature, but depositing a material to be source and drain electrodes by a sputtering method; processing the material to form the source and drain electrodes; forming a protective insulating film, and then forming a first barrier film; adding excess oxygen or oxygen radicals to the protective insulating film through the first barrier film; performing heat treatment at a second temperature lower than 400° C. to diffuse the excess oxygen or oxygen radicals into the oxide semiconductor film; and removing part of the first barrier film and part of the protective insulating film by wet etching, and then forming a second barrier film.

Abstract translation: 提供一种用于制造高度可靠的半导体器件的方法。 该方法包括以下步骤：在第一温度下形成氧化物半导体膜; 将氧化物半导体膜加工成岛状; 在高于第一温度的温度下不进行处理，而是通过溅射法沉积作为源极和漏极的材料; 处理材料以形成源极和漏极; 形成保护绝缘膜，然后形成第一阻挡膜; 通过第一阻挡膜向保护绝缘膜中加入过量的氧或氧自由基; 在低于400℃的第二温度下进行热处理以将过量的氧或氧自由基扩散到氧化物半导体膜中; 并通过湿法蚀刻除去第一阻挡膜和保护绝缘膜的一部分的一部分，然后形成第二阻挡膜。