-
公开(公告)号：US08064681B2
公开(公告)日：2011-11-22
申请号：US12292660
申请日：2008-11-24
IPC分类号： G06K9/00
CPC分类号： G06K9/00 , G06K2209/19 , G06T7/0004
摘要： The present invention provides a reticle inspection technology that enables a relative position between patterns to be evaluated for a pattern that may become a defect at the time of exposure to a sample, such as a wafer, in the double patterning technology on the same layer. An apparatus for inspecting a reticle for inspecting two reticles that are used in order to form patterns in the same layer on a substrate using the double patterning technology has: a coordinate information input unit for inputting coordinate information of a pattern of a measuring object; an image input unit for acquiring images of patterns of the two reticles based on the obtained coordinate information; an image overlay unit for overlaying the images of the two reticles at the same coordinates; a relative position calculation unit for finding the relative position between the patterns on the two reticles; an evaluation unit for assigning an index of the overlaying accuracy based on the relative position and evaluates whether the two reticles need repair; and an evaluation result output unit for outputting an evaluation result.
摘要翻译： 本发明提供了一种掩模版检查技术，其能够在同一层上的双重图案化技术中，使图案之间的相对位置能够在暴露于样品（例如晶片）时成为缺陷的图案被评估。 用于检查用于检查用于使用双重图案形成技术在基板上形成图案的图案的两个掩模版的掩模版的装置具有：用于输入测量对象的图案的坐标信息的坐标信息输入单元; 图像输入单元，用于基于所获得的坐标信息获取两个标线图案的图像; 用于在相同坐标处叠加两个光罩的图像的图像叠加单元; 相对位置计算单元，用于找到两个标线之间的图案之间的相对位置; 评估单元，用于基于所述相对位置分配所述重叠精度的指标，并评估所述两个标线是否需要修理; 以及评价结果输出单元，用于输出评估结果。
-
公开(公告)号：US20110147586A1
公开(公告)日：2011-06-23
申请号：US13058712
申请日：2009-09-10
IPC分类号： H01J37/153 , G01N23/00
CPC分类号： H01J37/153 , H01J37/265 , H01J37/28 , H01J2237/004 , H01J2237/1532 , H01J2237/216 , H01J2237/221
摘要： The astigmatism control processing time is decreased to 1 second or less by improving the astigmatic difference measurement accuracy. A charged particle beam device includes: a stage on which a sample is loaded; a transport mechanism which carries the sample onto the stage; a charged particle beam optical system which irradiates the sample on the stage with a charged particle beam and detects secondary charged particles generated from the sample; and a controller which determines setup parameters for the charged particle beam optical system and controls the charged particle beam optical system. The controller registers and holds electro-optical system setup parameters for irradiation with a beam tilted from a normal line on the sample as the charged particle beam, compares observation images obtained by the tilted beam, measures the amount and direction of movement and calculates the amount of astigmatism correction from the amount of movement and the direction.
摘要翻译： 散光控制处理时间通过改善像散差测量精度而降低到1秒以下。 带电粒子束装置包括：加载样品的载物台; 将样品携带到舞台上的运送机构; 带电粒子束光学系统，其用带电粒子束照射台上的样品，并检测从样品产生的二次带电粒子; 以及控制器，其确定带电粒子束光学系统的设置参数并控制带电粒子束光学系统。 控制器注册并保持电子光学系统设置参数，用于用作为带电粒子束的样品上从法线上倾斜的光束照射，比较通过倾斜光束获得的观察图像，测量移动量和移动方向， 从运动量和方向上矫正散光。
-
73.发明授权Charged particle beam measurement equipment, size correction and standard sample for correction 有权带电粒子束测量设备，尺寸校正和标准样品进行校正公开(公告)号：US07683313B2
公开(公告)日：2010-03-23
申请号：US12010852
申请日：2008-01-30
IPC分类号： G01D18/00
CPC分类号： H01J37/28 , B82Y15/00 , H01J2237/2826
摘要： Correction of widths obtained by measurement of a sample with the use of a scanning electron microscope is executed with greater precision. A standard sample for correction comprises a plurality of correction mark members, the respective correction mark members, being lined up at specified intervals in a specified direction, and respective widths thereof, in the specified direction, differing from each other so as to be of respective sizes as pre-set. Measurement of the respective widths of the correction mark members is made to obtain respective measurement widths while authorized widths of the correction mark members are kept stored in an image processing unit of the scanning electron microscope to thereby find differences between the respective measurement widths, and authorized widths corresponding thereto, and the differences are stored as respective correction functions to correct the measurement width of the sample.
摘要翻译： 以更高的精度执行通过使用扫描电子显微镜测量样品获得的宽度的校正。 用于校正的标准样本包括多个校正标记构件，各个校正标记构件在指定方向上以指定间隔排列，并且在指定方向上以相应的宽度彼此不同，以相应的方式 尺寸为预设。 进行校正标记部件的宽度的测量，以获得各自的测量宽度，同时将校正标记部件的授权宽度保存在扫描电子显微镜的图像处理单元中，从而发现各个测量宽度之间的差异，并且被授权 相应的宽度，并且差异被存储为相应的校正函数以校正样本的测量宽度。
-
74.发明授权公开(公告)号：US07679056B2
公开(公告)日：2010-03-16
申请号：US11687002
申请日：2007-03-16
CPC分类号： G01N23/2258 , H01J37/026 , H01J37/28 , H01J2237/0044 , H01J2237/0047 , H01J2237/204 , H01J2237/221 , H01J2237/2817 , H01L21/67207 , H01L21/67253
摘要： The present invention provides a pattern inspection technique that enables measurement and inspection of a fine pattern by a charged particle beam to be performed with high throughput. A metrology system of fine pattern according to the pattern inspection technique has: a the column that includes a charged particle source, an electron optics for scanning a desired observation area on a sample with a charged particle beam emitted from the charged particle source, and a detector for detecting charged particles generated secondarily from the sample scanned by the charged particle beam; information processing means for measuring information about geometry of a pattern formed on the sample based on information on the intensity of the charged particles obtained by the detector; and a sample introduction unit for introducing the sample into the inside of the column; wherein a charge neutralizer unit for generating ions and charge neutralizing the sample with the ions and surface potential measuring means for measuring a surface potential of the sample surface are provided on a path that is inside the sample introduction unit and transports the sample to the column.
摘要翻译： 本发明提供一种图案检查技术，其能够通过以高产量进行的带电粒子束来测量和检查精细图案。 根据图案检查技术的精细图案的计量系统具有：包括带电粒子源的列，用于从带电粒子源发射的带电粒子束扫描样品上的期望观察区域的电子光学器件，以及 检测器，用于检测由带电粒子束扫描的样品二次产生的带电粒子; 信息处理装置，用于根据关于由检测器获得的带电粒子的强度的信息来测量关于样品上形成的图案的几何形状的信息; 以及用于将样品引入柱内的样品引入单元; 其中，用于产生离子的电荷中和装置，用于测量样品表面电位的表面电位测量装置的离子和表面电位测量装置，并在样品引入单元内部的路径上传送样品至柱。
-
75.发明授权Standard reference component for calibration, fabrication method for the same, and scanning electron microscope using the same 有权用于校准的标准参考部件，其制造方法和使用其的扫描电子显微镜公开(公告)号：US07612334B2
公开(公告)日：2009-11-03
申请号：US11939596
申请日：2007-11-14
CPC分类号： H01J37/28 , H01J37/244 , H01J37/263 , H01J2237/24578 , H01J2237/2816 , H01J2237/2823 , H01J2237/2826 , H01J2237/30433 , H01J2237/3142 , H01J2237/31732
摘要： The present invention provides a standard reference component for calibration for performing magnification calibration used in the scanning electron microscope with high precision, and provides a scanning electron microscope technique using it. Provided is a standard reference component for calibration for calibrating a scanning electron microscope that measures a length of a pattern in an observation area from information on the intensity of secondary electrons or reflected electrons generated by scanning an incident electron beam in the observation area on a measuring sample, having: a first substrate on which a multiple-layer is laminated and a second substrate with a recess for holding the first substrate, wherein the first substrate is held in the recess of the second substrate so that a normal direction of the multiple-layer surface may be roughly perpendicular to a normal direction of the second substrate surface, and the multiple-layer has a multiple-layer structure of a film containing silicon and a film containing molybdenum.
摘要翻译： 本发明提供了一种用于校准的标准参考部件，用于以高精度执行扫描电子显微镜中使用的放大校准，并提供使用它的扫描电子显微镜技术。 提供了用于校准扫描电子显微镜的标准参考部件，该扫描电子显微镜从关于通过扫描观察区域中的入射电子束产生的二次电子或反射电子的强度的信息来测量观察区域中的图案的长度 具有：层叠有多层的第一基板和具有用于保持所述第一基板的凹部的第二基板，其中，所述第一基板保持在所述第二基板的所述凹部中， 层表面可以大致垂直于第二基板表面的法线方向，并且多层具有含硅的膜和含有钼的膜的多层结构。
-
公开(公告)号：US20080210867A1
公开(公告)日：2008-09-04
申请号：US11866426
申请日：2007-10-03
CPC分类号： H01J37/28 , H01J37/265 , H01J2237/2826
摘要： In method and apparatus for obtaining a scanning electron microscope image devoid of distortion by measuring a scanning distortion and calibrating the scanning distortion, there occurs a problem that an error takes place in dimension control owing to a scanning distortion of an electron beam. To cope with this problem, an image is obtained by scanning a predetermined region with the electron beam, a plurality of regions are selected from the image, the pattern pitch is measured in each of the regions and a scanning distortion amount is calculated from the result of measurement and then corrected.
摘要翻译： 在通过测量扫描失真和校准扫描失真来获得没有失真的扫描电子显微镜图像的方法和装置中，存在由于电子束的扫描失真引起的尺寸控制中出现误差的问题。 为了解决这个问题，通过用电子束扫描预定区域来获得图像，从图像中选择多个区域，在每个区域中测量图案间距，并根据结果计算扫描失真量 的测量，然后校正。
-
公开(公告)号：US20070272858A1
公开(公告)日：2007-11-29
申请号：US11704227
申请日：2007-02-09
IPC分类号： G01N23/22
CPC分类号： H01J37/265 , H01J37/28 , H01J2237/04735 , H01J2237/216 , H01J2237/2817
摘要： It is to provide a technology that can quickly process many measurement points on a substrate by a primary charged particle beam. In a control system, with respect to each measurement point (irradiation position of the primary charged particle beam) on a wafer, a calculator obtains a probability of a surface potential at a relevant measurement point that is obtained from a surface potential distribution function of the wafer and is stored in a data storage unit. Based on the probability, the calculator determines an amplitude of a set parameter (for example, retarding voltage) of charged particle optics at the relevant measurement point. Then the calculator checks the focus state of the primary charged particle beam by changing the set parameter in the range of the determined amplitude, and determines the set parameter to be used for measurement.
摘要翻译： 它是提供一种能够通过初级带电粒子束快速处理衬底上许多测量点的技术。 在控制系统中，对于晶片上的每个测量点（初级带电粒子束的照射位置），计算器获得从相对测量点的表面电位分布函数获得的相关测量点的表面电位的概率， 并存储在数据存储单元中。 基于概率，计算器确定相关测量点处的带电粒子光学器件的设定参数（例如延迟电压）的幅度。 然后，计算器通过在确定的幅度的范围内改变设定参数来检查主要带电粒子束的聚焦状态，并确定要用于测量的设定参数。
-
78.发明申请公开(公告)号：US20070221844A1
公开(公告)日：2007-09-27
申请号：US11687002
申请日：2007-03-16
CPC分类号： G01N23/2258 , H01J37/026 , H01J37/28 , H01J2237/0044 , H01J2237/0047 , H01J2237/204 , H01J2237/221 , H01J2237/2817 , H01L21/67207 , H01L21/67253
摘要： The present invention provides a pattern inspection technique that enables measurement and inspection of a fine pattern by a charged particle beam to be performed with high throughput. A metrology system of fine pattern according to the pattern inspection technique has: a the column that includes a charged particle source, an electron optics for scanning a desired observation area on a sample with a charged particle beam emitted from the charged particle source, and a detector for detecting charged particles generated secondarily from the sample scanned by the charged particle beam; information processing means for measuring information about geometry of a pattern formed on the sample based on information on the intensity of the charged particles obtained by the detector; and a sample introduction unit for introducing the sample into the inside of the column; wherein a charge neutralizer unit for generating ions and charge neutralizing the sample with the ions and surface potential measuring means for measuring a surface potential of the sample surface are provided on a path that is inside the sample introduction unit and transports the sample to the column.
摘要翻译： 本发明提供一种图案检查技术，其能够通过以高产量进行的带电粒子束来测量和检查精细图案。 根据图案检查技术的精细图案的计量系统具有：包括带电粒子源的列，用于从带电粒子源发射的带电粒子束扫描样品上的期望观察区域的电子光学器件，以及 检测器，用于检测由带电粒子束扫描的样品二次产生的带电粒子; 信息处理装置，用于根据关于由检测器获得的带电粒子的强度的信息来测量关于样品上形成的图案的几何形状的信息; 以及用于将样品引入柱内的样品引入单元; 其中，用于产生离子的电荷中和装置，用于测量样品表面电位的表面电位测量装置的离子和表面电位测量装置，并在样品引入单元内部的路径上传送样品至柱。
-
公开(公告)号：US06768118B2
公开(公告)日：2004-07-27
申请号：US10350188
申请日：2003-01-24
申请人： Yoshinori Nakayama , Yasunari Sohda , Hiroya Ohta , Norio Saitou , Masato Muraki , Masaki Takakuwa
发明人： Yoshinori Nakayama , Yasunari Sohda , Hiroya Ohta , Norio Saitou , Masato Muraki , Masaki Takakuwa
IPC分类号： H01J326
CPC分类号： H01J37/244 , H01J2237/24405 , H01J2237/31774
摘要： The present invention provides a beam monitoring sensor which can offer both high beam monitoring precision and high speed monitoring in a multi-electron beam writing system and a monitoring method using the same. In a Faraday cup for electron beam monitoring, tantalum or a heavy metal material having an atomic number larger than that of tantalum is used to provide a Faraday cup construction having a high aspect ratio. The micro Faraday cup permits electron beam monitoring having less beam leak to a high acceleration electron beam.
摘要翻译： 本发明提供了一种能够在多电子束书写系统中提供远光监测精度和高速监测的光束监测传感器以及使用其的监测方法。在用于电子束监测的法拉第杯中，钽或重金属 使用原子序数大于钽的材料来提供具有高纵横比的法拉第杯结构。 微法拉第杯允许电子束监测具有较少的光束泄漏到高加速度电子束。
-
公开(公告)号：US06511048B1
公开(公告)日：2003-01-28
申请号：US09191383
申请日：1998-11-13
申请人： Yasunari Sohda , Yasuhiro Someda , Hiroya Ohta , Takashi Matsuzaka , Norio Saitou , Yoshinori Nakayama
发明人： Yasunari Sohda , Yasuhiro Someda , Hiroya Ohta , Takashi Matsuzaka , Norio Saitou , Yoshinori Nakayama
IPC分类号： H01J3730
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： An electron beam lithography apparatus and a semiconductor device pattern forming method for precisely writing patterns near the periphery of a cell mask so that large scale integrated circuits and fine structure devices are fabricated at high yield rates. Cell figures with lower aperture rates are located peripherally and cell figures with higher aperture rates are located closer to a central portion within each of aperture groups furnished on a second mask of the inventive apparatus adopting cell projection. Illustratively, on a mask for use in semiconductor device fabrication, cell figures for forming line patterns and gate patterns are located centrally and cell figures for forming hole patterns are positioned peripherally in each aperture group. This allows the peripherally located figures to be written precisely in each aperture group.
摘要翻译： 一种电子束光刻设备和用于在单元掩模的周围精确地写入图案的半导体器件图案形成方法，从而以高产率制造大规模集成电路和精细结构器件。 具有较低孔径率的单元图形位于外围，并且具有较高孔径率的单元图形位于更接近于采用单元投影的本发明设备的第二掩模上提供的每个孔组内的中心部分。 示例性地，在用于半导体器件制造的掩模上，用于形成线图案和栅极图案的单元图形位于中央，并且用于形成孔图案的单元图形周边地定位在每个孔组中。 这允许在每个孔径组中精确地写入外围定位的图形。
-
-
-
-
-
-
-
-
-
搜索结果
85 条记录 (耗时 0.036 秒)
