利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

79 条记录 (耗时 0.025 秒)

    Monitoring apparatus and control apparatus for traffic signal lights
    71.
    发明授权
    Monitoring apparatus and control apparatus for traffic signal lights 失效
    交通信号灯监控装置及控制装置

    公开(公告)号：US06184799B2

    公开(公告)日：2001-02-06

    申请号：US08750771

    申请日：1996-12-17

    申请人： Yoshitaka Jinno ,  Yoshiharu Ozaki ,  Norihiro Okada ,  Heisaku Mazawa ,  Hidetoshi Fujimoto ,  Junya Toda ,  Koichi Futsuhara ,  Norihiro Asada

    发明人： Yoshitaka Jinno ,  Yoshiharu Ozaki ,  Norihiro Okada ,  Heisaku Mazawa ,  Hidetoshi Fujimoto ,  Junya Toda ,  Koichi Futsuhara ,  Norihiro Asada

    IPC分类号： G08G1095

    CPC分类号： G08G1/097

    摘要： Monitoring and control apparatus for fail-safe monitoring for normal operation of traffic signal lights provided at an intersection or the like where a plurality of roads intersect. The illumination conditions of respective signal lights are detected using as sensor device, and when the number of illuminated or non-illuminated signal lights is a predetermined number, a normal judgment output of logic value 1 corresponding to a high energy condition is generated while, when the number of illuminated or non-illuminated signal lights is not the predetermined number, an abnormal judgment output of logic value 0 corresponding to a low energy condition is generated. As a result, when a fault in the monitoring apparatus stops the output, the resultant output condition is the same as for a danger condition due to a signal light abnormality, resulting in an extremely safe signal light monitoring and control with excellent fail-safe characteristics.

    摘要翻译： 用于在多个道路相交的十字路口等处提供的交通信号灯的正常操作的故障安全监视监视和控制装置。 使用传感器装置检测各信号灯的照明条件，当照明或非照明信号灯的数量为预定数量时，产生与高能量条件对应的逻辑值1的正常判断输出，而当 照明信号灯或非照明信号灯的数量不是预定数量，产生对应于低能量条件的逻辑值0的异常判断输出。 结果，当监视装置中的故障停止输出时，由此产生的输出条件与由于信号光异常引起的危险状况相同，导致极其安全的信号灯监视和控制，具有优良的故障安全特性 。

    Method of separating semiconductor devices
    74.
    发明授权
    Method of separating semiconductor devices 失效
    分离半导体器件的方法

    公开(公告)号：US5994205A

    公开(公告)日：1999-11-30

    申请号：US17238

    申请日：1998-02-02

    申请人： Masahiro Yamamoto ,  Hidetoshi Fujimoto

    发明人： Masahiro Yamamoto ,  Hidetoshi Fujimoto

    IPC分类号： H01L21/301 ,  H01L21/78 ,  H01L33/00 ,  H01S5/02

    CPC分类号： H01S5/0201 ,  H01L21/78 ,  H01L33/0079

    摘要： A top surface of a wafer, at which semiconductor devices are formed, is bonded to an auxiliary plate by means of a first wax. In a state where the auxiliary plate is bonded to a polishing jig by means of a second wax, a bottom surface of the wafer, at which a sapphire substrate is provided, is polished. The second wax is melted and the auxiliary plate is removed from the polishing jig. In this state, scribe lines are formed in the bottom surface of the wafer according to a device separation pattern. Then, the bottom surface of the wafer is attached to an adhesive sheet, following which the first wax is melted and the wafer is removed from the auxiliary plate 105. Subsequently, the adhesive sheet is extended and the wafer is divided into the devices along the scribe lines.

    摘要翻译： 通过第一蜡将半导体器件形成的晶片的顶表面结合到辅助板上。 在通过第二蜡将辅助板结合到抛光夹具的状态下，抛光设置有蓝宝石基板的晶片的底面。 将第二蜡熔化，并将辅助板从抛光夹具中取出。 在这种状态下，根据器件分离图案在晶片的底表面上形成刻划线。 然后，将晶片的底面安装在粘合片上，随后将第一蜡熔化，并从辅助板105中取出晶片。随后，粘合片延伸，并将晶片沿着 划线

    Semiconductor laser
    76.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号：US5740192A

    公开(公告)日：1998-04-14

    申请号：US767673

    申请日：1996-12-17

    申请人： Ako Hatano ,  Yasuo Ohba ,  Hidetoshi Fujimoto ,  Kazuhiko Itaya ,  Johji Nishio

    发明人： Ako Hatano ,  Yasuo Ohba ,  Hidetoshi Fujimoto ,  Kazuhiko Itaya ,  Johji Nishio

    IPC分类号： H01S5/323 ,  H01S3/19 ,  H01L33/00

    CPC分类号： H01S5/32341 ,  H01S2302/00

    摘要： A semiconductor laser exhibiting an oscillation wavelength of 450 nm or less and comprising a substrate, a lower clad layer formed on or above the substrate and mainly composed of a III-V Group compound semiconductor, an active layer formed directly on the lower clad layer and mainly composed of a III-V Group compound semiconductor, and an upper p-type clad layer formed directly on the active layer and mainly composed of a III-V Group compound semiconductor. This semiconductor laser is characterized in that the upper p-type clad layer contains Mg, Si and at least one impurities for compensating residual donors.

    摘要翻译： 表现出450nm以下的振荡波长的半导体激光器，其特征在于，具有基板，形成在所述基板上或上方的主要由III-V族化合物半导体构成的下部包层，直接形成在所述下部包层上的有源层和 主要由III-V族化合物半导体构成，上部p型覆盖层直接形成在主要由III-V族化合物半导体构成的有源层上。 该半导体激光器的特征在于，上部p型覆盖层含有Mg，Si和用于补偿残余供体的至少一种杂质。