Abstract:
An ultrasonic sensor for detecting an object includes: a piezoelectric element having a piezoelectric body and first and second electrodes for sandwiching the piezoelectric body; an acoustic matching element having a reception surface, which receives an ultrasonic wave reflected by the object; and a circuit electrically coupled with the piezoelectric element via a wire. The piezoelectric element is embedded in the acoustic matching element so that the acoustic matching element covers at least the first electrode, a part of a sidewall of the piezoelectric element and a part of the wire between the circuit and the piezoelectric element, and the sidewall of the piezoelectric element is adjacent to the first electrode.
Abstract:
An ultrasonic sensor includes a piezoelectric element and an acoustic matching member that are joined together to form an ultrasonic detector base. The ultrasonic detector base is sectioned by a clearance extending in an ultrasonic propagation direction to form multiple ultrasonic detectors arranged in an array. The clearance does not entirely section the ultrasonic detector base so that the ultrasonic detectors are joined together by a portion of the ultrasonic detector base.
Abstract:
A semiconductor device includes: a semiconductor substrate; a lateral MOS transistor disposed in the substrate; a Zener diode disposed in the substrate; and a capacitor disposed in the substrate. The transistor includes a drain and a gate, and the diode and the capacitor are coupled in series between the drain and the gate. This device has minimized dimensions and high switching speed. Further, both of a switching loss and a surge voltage are improved.
Abstract:
In an attachment structure, a protective cap is provided with an adhesion layer on its outer peripheral edge part and its internal surface. The protective cap is bonded and fixed to an adherend member through the adhesion layer. This attachment structure can be suitably used for a semiconductor device. Alternatively, in a semiconductor device, a protective cap can be bonded using an adhesive. In this case, an outer peripheral edge part of the protective cap has a first end positioned on its inner rim surface, and a second end positioned on its outer rim surface. Furthermore, the first end protrudes toward a sensor chip more than the second end, and is adjacent to the sensor chip.
Abstract:
A semiconductor wafer is disclosed for which irradiation of a laser beam forms a modified region due to multiphoton absorption to thereby facilitate dicing of the semiconductor wafer. The semiconductor wafer includes a formation member and a scribe groove located on the formation member according to an irradiation position of the laser beam. The scribe groove defines an open end and a bottom end. A width of the scribe groove is greater at the open end than at the bottom end.
Abstract:
A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.
Abstract:
A pressure sensor device having a casing (10) accommodating a sensor element (20) mounted on a mounting member (30). The casing (10) includes an opening (11) in one surface thereof. The sensor element (20) is arranged in the opening (11) for measuring the pressure outside of the casing. The casing (10) is preferably mounted on the circuit board, which is the mounting member (30). The casing (10) is mounted on the circuit board in such a state that the opening side (11) faces the circuit board.
Abstract:
A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.
Abstract:
A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.
Abstract:
An electrical capacitance pressure sensor has a lower electrode, a movable electrode, and an upper electrode. A first cavity portion is formed between the lower electrode and the movable electrode. A second cavity portion is formed between the upper electrode and the movable electrode. The substrate has an opening portion that penetrates the substrate from the first surface to the second surface thereof. The lower electrode has at least one first window portion that penetrates the lower electrode from the side of the substrate to the side of the first cavity portion and communicates the cavity portion to the opening portion of the substrate. The upper electrode has at least one second window portion that penetrates the upper electrode from the side of the cavity portion to the outside thereof to communicate the cavity portion with the outside.