Ultrasonic sensor
    71.
    发明申请
    Ultrasonic sensor 有权
    超声波传感器

    公开(公告)号:US20090054784A1

    公开(公告)日:2009-02-26

    申请号:US12230039

    申请日:2008-08-21

    CPC classification number: G01S7/521

    Abstract: An ultrasonic sensor for detecting an object includes: a piezoelectric element having a piezoelectric body and first and second electrodes for sandwiching the piezoelectric body; an acoustic matching element having a reception surface, which receives an ultrasonic wave reflected by the object; and a circuit electrically coupled with the piezoelectric element via a wire. The piezoelectric element is embedded in the acoustic matching element so that the acoustic matching element covers at least the first electrode, a part of a sidewall of the piezoelectric element and a part of the wire between the circuit and the piezoelectric element, and the sidewall of the piezoelectric element is adjacent to the first electrode.

    Abstract translation: 一种用于检测物体的超声波传感器包括:具有压电体的压电元件和用于夹持压电体的第一和第二电极; 具有接收表面的声匹配元件,其接收由所述物体反射的超声波; 以及经由导线与压电元件电耦合的电路。 压电元件被嵌入在声匹配元件中,使得声匹配元件至少覆盖第一电极,压电元件的侧壁的一部分和电路与压电元件之间的线的一部分,以及侧壁 压电元件与第一电极相邻。

    Ultrasonic sensor and method of making the same
    72.
    发明申请
    Ultrasonic sensor and method of making the same 有权
    超声波传感器及其制作方法

    公开(公告)号:US20090015105A1

    公开(公告)日:2009-01-15

    申请号:US12213894

    申请日:2008-06-26

    CPC classification number: B06B1/0629 B06B3/00 G01S7/523

    Abstract: An ultrasonic sensor includes a piezoelectric element and an acoustic matching member that are joined together to form an ultrasonic detector base. The ultrasonic detector base is sectioned by a clearance extending in an ultrasonic propagation direction to form multiple ultrasonic detectors arranged in an array. The clearance does not entirely section the ultrasonic detector base so that the ultrasonic detectors are joined together by a portion of the ultrasonic detector base.

    Abstract translation: 超声波传感器包括连接在一起以形成超声波检测器基座的压电元件和声匹配构件。 超声波检测器基座以超声波传播方向延伸的间隙分段,形成排列成阵列的多个超声波探伤器。 该间隙不完全是超声波检测器底座的部分,使得超声波探测器由超声波检测器底座的一部分连接在一起。

    Cap attachment structure, semiconductor sensor device and method
    74.
    发明申请
    Cap attachment structure, semiconductor sensor device and method 审中-公开
    盖附件结构,半导体传感器装置及方法

    公开(公告)号:US20070232107A1

    公开(公告)日:2007-10-04

    申请号:US11723431

    申请日:2007-03-20

    Abstract: In an attachment structure, a protective cap is provided with an adhesion layer on its outer peripheral edge part and its internal surface. The protective cap is bonded and fixed to an adherend member through the adhesion layer. This attachment structure can be suitably used for a semiconductor device. Alternatively, in a semiconductor device, a protective cap can be bonded using an adhesive. In this case, an outer peripheral edge part of the protective cap has a first end positioned on its inner rim surface, and a second end positioned on its outer rim surface. Furthermore, the first end protrudes toward a sensor chip more than the second end, and is adjacent to the sensor chip.

    Abstract translation: 在附接结构中,保护盖在其外周边缘部分及其内表面上设置有粘附层。 保护帽通过粘合层粘合固定在被粘物上。 这种连接结构可以适用于半导体器件。 或者,在半导体器件中,可以使用粘合剂粘合保护帽。 在这种情况下,保护盖的外周边缘部分具有位于其内缘表面上的第一端和位于其外缘表面上的第二端。 此外,第一端比传感器芯片更靠近传感器芯片,并且与传感器芯片相邻。

    Semiconductor wafer
    75.
    发明申请
    Semiconductor wafer 审中-公开
    半导体晶圆

    公开(公告)号:US20070111477A1

    公开(公告)日:2007-05-17

    申请号:US11600099

    申请日:2006-11-16

    CPC classification number: B23K26/40 B23K26/53 B23K2103/50 B28D5/0011 H01L21/78

    Abstract: A semiconductor wafer is disclosed for which irradiation of a laser beam forms a modified region due to multiphoton absorption to thereby facilitate dicing of the semiconductor wafer. The semiconductor wafer includes a formation member and a scribe groove located on the formation member according to an irradiation position of the laser beam. The scribe groove defines an open end and a bottom end. A width of the scribe groove is greater at the open end than at the bottom end.

    Abstract translation: 公开了半导体晶片,其由于多光子吸收而激光束的照射形成改质区域,从而有利于半导体晶片的切割。 半导体晶片包括根据激光束的照射位置位于形成构件上的形成构件和划​​线槽。 划线槽限定开口端和底端。 划线槽的宽度在开口端大于底端宽度。

    Pressure sensor device and method of producing the same
    77.
    发明授权
    Pressure sensor device and method of producing the same 失效
    压力传感器装置及其制造方法

    公开(公告)号:US07089799B2

    公开(公告)日:2006-08-15

    申请号:US10744097

    申请日:2003-12-24

    Abstract: A pressure sensor device having a casing (10) accommodating a sensor element (20) mounted on a mounting member (30). The casing (10) includes an opening (11) in one surface thereof. The sensor element (20) is arranged in the opening (11) for measuring the pressure outside of the casing. The casing (10) is preferably mounted on the circuit board, which is the mounting member (30). The casing (10) is mounted on the circuit board in such a state that the opening side (11) faces the circuit board.

    Abstract translation: 一种具有容纳安装在安装构件(30)上的传感器元件(20)的壳体(10)的压力传感器装置。 壳体(10)在其一个表面中包括开口(11)。 传感器元件(20)布置在用于测量壳体外部的压力的开口(11)中。 壳体(10)优选安装在作为安装构件(30)的电路板上。 壳体(10)以开口侧(11)面向电路板的状态安装在电路板上。

    Semiconductor mechanical sensor
    78.
    发明授权
    Semiconductor mechanical sensor 失效
    半导体机械传感器

    公开(公告)号:US07040165B2

    公开(公告)日:2006-05-09

    申请号:US11062935

    申请日:2005-02-22

    Abstract: A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.

    Abstract translation: 具有S / N比提高的新结构的半导体机械传感器。 在硅衬底1的中心部分,形成包括梁结构的凹部2。 在梁的尖端处形成重物,并且在凹部2的底面中的重物的底面中,重物形成为电极5。 在重量部分4和电极5之间施加交流电力,从而产生静电,并且重量被静电激励。 在与重量的激励方向垂直的轴向方向上,电极6设置为面对重物的一个表面和面向其的基板的壁表面。 对面对电极之间的电容变化进行电检测,因此检测到以相同方向作用的物理力的变化。

    Electrical capacitance pressure sensor having electrode with fixed area and manufacturing method thereof
    80.
    发明授权
    Electrical capacitance pressure sensor having electrode with fixed area and manufacturing method thereof 有权
    具有固定面积的电极的电容式压力传感器及其制造方法

    公开(公告)号:US06584852B2

    公开(公告)日:2003-07-01

    申请号:US10176590

    申请日:2002-06-24

    CPC classification number: G01L9/0073

    Abstract: An electrical capacitance pressure sensor has a lower electrode, a movable electrode, and an upper electrode. A first cavity portion is formed between the lower electrode and the movable electrode. A second cavity portion is formed between the upper electrode and the movable electrode. The substrate has an opening portion that penetrates the substrate from the first surface to the second surface thereof. The lower electrode has at least one first window portion that penetrates the lower electrode from the side of the substrate to the side of the first cavity portion and communicates the cavity portion to the opening portion of the substrate. The upper electrode has at least one second window portion that penetrates the upper electrode from the side of the cavity portion to the outside thereof to communicate the cavity portion with the outside.

    Abstract translation: 电容式压力传感器具有下电极,可动电极和上电极。 第一空腔部分形成在下电极和可动电极之间。 第二空腔部分形成在上电极和可动电极之间。 衬底具有从第一表面到第二表面穿透衬底的开口部分。 下电极具有至少一个第一窗口部分,其从基板的侧面到第一空腔部分的侧面穿透下电极,并且将空腔部分连通到基板的开口部分。 上电极具有至少一个第二窗口部分,其从空腔部分的侧面向外部贯穿上部电极,以将空腔部分与外部连通。

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