Light-emitting apparatus
    71.
    发明授权

    公开(公告)号:US08297785B2

    公开(公告)日:2012-10-30

    申请号:US13327255

    申请日:2011-12-15

    申请人: Hideo Nagai

    发明人: Hideo Nagai

    IPC分类号: F21V1/00 F21V11/00

    摘要: The light-emitting apparatus (1) of the present invention includes: a storage case (12) that includes a base board (10) having a concave portion (10a) and a lid portion (11) covering the concave portion (10a); and a plurality of light-emitting elements (13) that are disposed on an inner surface (12a) of the storage case (12), an opening (11a) is formed in the lid portion (11), at least a part of the inner surface (12a) is a light-reflecting surface that wave-guides light emitted by the light-emitting elements (13) as light sources to a position directly underneath the opening (11), and a reflecting portion (15) that reflects the light emitted by the light-emitting elements (13) as the light sources toward the opening (11a) is formed directly underneath the opening (11a). Thereby, the light-emitting apparatus having a point light source with high brightness can be provided.

    Light-emitting device
    72.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号:US08288790B2

    公开(公告)日:2012-10-16

    申请号:US13158854

    申请日:2011-06-13

    申请人: Hideo Nagai

    发明人: Hideo Nagai

    IPC分类号: H01L33/00

    摘要: A light-emitting device includes a base and a light-emitting element that is disposed on the base. The light-emitting element is made up of a plurality of semiconductor layers including a light-emitting layer, and at the same time, is covered with a wavelength converting portion that includes a wavelength converting material. The light-emitting layer emits primary light, and the wavelength converting material absorbs part of the primary light and emits secondary light. The luminance of the primary light emitted from the edge portion of the light extraction surface of the light-emitting device is higher than the luminance of the primary light emitted from the inner region located inside the edge portion, and the ratio of the primary light and the secondary light that are emitted from a light extraction surface of the wavelength converting portion is substantially uniform across the light extraction surface of the wavelength converting portion. Thereby, a light color difference across the light extraction surface of the wavelength converting portion that covers the light-emitting element can be reduced further, and it is possible to irradiate an irradiation surface with light of uniform color.

    摘要翻译: 发光装置包括基底和设置在基底上的发光元件。 发光元件由包括发光层的多个半导体层构成,同时由包括波长转换材料的波长转换部分覆盖。 发光层发射一次光,并且波长转换材料吸收一次光并发射二次光。 从发光装置的光提取面的边缘部发射的一次光的亮度高于从位于边缘部内侧的内部区域发射的一次光的亮度, 从波长转换部分的光提取表面发射的次级光在波长转换部分的光提取表面上基本上均匀。 由此,可以进一步降低覆盖发光元件的波长转换部的光提取面两侧的光色差,能够以均匀的颜色的光照射照射面。

    Semiconductor light emitting device, illumination module, illumination apparatus, method for manufacturing semiconductor light emitting device, and method for manufacturing semiconductor light emitting element
    73.
    发明授权
    Semiconductor light emitting device, illumination module, illumination apparatus, method for manufacturing semiconductor light emitting device, and method for manufacturing semiconductor light emitting element 有权
    半导体发光元件,照明模块,照明装置,半导体发光元件的制造方法以及半导体发光元件的制造方法

    公开(公告)号:US08022420B2

    公开(公告)日:2011-09-20

    申请号:US12695076

    申请日:2010-01-27

    申请人: Hideo Nagai

    发明人: Hideo Nagai

    IPC分类号: H01L29/18

    摘要: A semiconductor light emitting device (10) is provided with a base substrate (12) and three LED chips (14A, 14B, and 14C) disposed on the base substrate (12). Each LED chip (14A, 14B, and 14C) includes a semiconductor multilayer structure (20) and has a rhombus shape with interior angles of approximately 60° and approximately 120° in plan view. Each semiconductor multilayer structure (20) has an HCP single crystal structure and includes a light emission layer (24). The LED chips (14A, 14B, and 14C) are arranged on the base substrate (12) so as to face one another at a vertex forming the larger interior angle in plan view. With this arrangement, the LED chips (14A, 14B, and 14C) as a whole form a substantially regular hexagonal shape.

    摘要翻译: 半导体发光器件(10)设置有基底(12)和设置在基底(12)上的三个LED芯片(14A,14B和14C)。 每个LED芯片(14A,14B和14C)包括半导体多层结构(20),并且在平面图中具有约60°和约120°的内角的菱形。 每个半导体多层结构(20)具有HCP单晶结构并且包括发光层(24)。 LED芯片(14A,14B,14C)以平面图形成较大内角的顶点彼此相对配置在基底基板(12)上。 利用这种布置,LED芯片(14A,14B和14C)整体形成基本上规则的六边形形状。

    SEMICONDUCTOR LIGHT-EMITTING APPARATUS
    74.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING APPARATUS 有权
    半导体发光装置

    公开(公告)号:US20110090696A1

    公开(公告)日:2011-04-21

    申请号:US12867216

    申请日:2009-03-16

    IPC分类号: F21V9/00

    摘要: A blue LED 18 that is a semiconductor light-emitting device and that emits blue light as primary light having a peak wavelength in a visible region and a phosphor plate 30 that is a wavelength converter and that converts a portion of the blue light emitted from the blue LED 18 into yellow light as secondary light having a longer peak wavelength in the visible region than the peak wavelength and emits the yellow light in combination with a remainder of the blue light left unconverted. The phosphor plate 30 includes (a) a main body 39 extending across a light-emission path of the blue LED 18 and (b) a light-emitting part 42 composed of a plurality of columnar protrusions 44 on a part of the main body 39 in a direction in which the light exits.

    摘要翻译: 作为半导体发光装置的蓝色LED18,其发出蓝色光,作为在可见光区域具有峰值波长的初级光和作为波长转换器的荧光体板30,并将从该光源发出的蓝色光的一部分 蓝色LED18变成黄色光,作为在可见光区域中比峰值波长具有更长的峰值波长的二次光,并且与剩余的未转换的蓝色光一起发射黄色光。 荧光体板30包括:(a)延伸穿过蓝色LED18的发光路径的主体39,以及(b)由主体39的一部分上的多个柱状突起44构成的发光部42 在光出射的方向上。

    Semiconductor light emitting device, method of manufacturing the same, and lighting apparatus and display apparatus using the same
    76.
    发明授权
    Semiconductor light emitting device, method of manufacturing the same, and lighting apparatus and display apparatus using the same 有权
    半导体发光器件及其制造方法以及使用其的照明装置及显示装置

    公开(公告)号:US07872280B2

    公开(公告)日:2011-01-18

    申请号:US12361396

    申请日:2009-01-28

    申请人: Hideo Nagai

    发明人: Hideo Nagai

    IPC分类号: H01L33/00

    摘要: The present invention aims to provide a semiconductor light emitting device that may be firmly attached to a substrate with maintaining excellent light emitting efficiency, and a manufacturing method of the same, and a lighting apparatus and a display apparatus using the same.In order to achieve the above object, the semiconductor light emitting device according to the present invention includes a luminous layer, a light transmission layer disposed over a main surface of the luminous layer, and having depressions on a surface facing away from the luminous layer, and a transmission membrane disposed on the light transmission layer so as to follow contours of the depressions, and light from the luminous layer is irradiated so as to pass through the light transmission layer and the transmission membrane.

    摘要翻译: 本发明的目的在于提供一种能够以保持良好的发光效率牢固地附着到基板的半导体发光器件及其制造方法,以及使用该半导体发光器件的照明装置和显示装置。 为了实现上述目的,根据本发明的半导体发光器件包括发光层,设置在发光层的主表面上的透光层,并且在背离发光层的表面上具有凹陷, 以及设置在光透射层上以便跟随凹陷的轮廓的透射膜,并且照射来自发光层的光以穿过透光层和透射膜。