公开(公告)号：US20050276288A1

公开(公告)日：2005-12-15

申请号：US11197624

申请日：2005-08-04

申请人： Yasuo Kitaoka ,  Toshifumi Yokoyama ,  Kazuhisa Yamamoto

发明人： Yasuo Kitaoka ,  Toshifumi Yokoyama ,  Kazuhisa Yamamoto

IPC分类号： G01J1/42 ,  H01S3/10 ,  H01S5/00 ,  H01S5/06 ,  H01S5/0625

CPC分类号： G01J1/4257 ,  H01S5/0014 ,  H01S5/005 ,  H01S5/0092 ,  H01S5/06256

摘要： A method for easily and quickly evaluating the wavelength variability properties of a wavelength-variable semiconductor laser is provided. An inspection device includes a power source for supplying current to a wavelength-variable DBR semiconductor laser having an active region, a phase control region, and a DBR region, a photo-detector for detecting an output intensity of laser beam emitted from the wavelength-variable DBR semiconductor laser, and a transmission type wavelength-selection element that can be inserted into a light path from the wavelength-variable DBR semiconductor laser to the photo-detector. In a state where the transmission type wavelength-selection element is inserted into the light path from the wavelength-variable DBR semiconductor laser to the photo-detector, at least one of a phase current that is supplied to the phase control region and a DBR current that is supplied to the DBR region is changed with respect to a predetermined active current that is supplied to the active region, and the output intensity of the laser beam after the laser beam has passed through the transmission type wavelength-selection element is detected by the photo-detector.

摘要翻译： 提供了一种容易且快速地评估波长可变半导体激光器的波长变异性的方法。 检查装置包括用于向具有有源区域的波长可变DBR半导体激光器提供电流的电源，相位控制区域和DBR区域，用于检测从波长范围发射的激光束的输出强度的光电检测器， 可变DBR半导体激光器和可以插入到从波长可变DBR半导体激光器到光检测器的光路中的透射型波长选择元件。 在透射型波长选择元件从波长可变DBR半导体激光器插入到光检测器的光路中的状态下，提供给相位控制区域的相电流和DBR电流中的至少一个 提供给DBR区域的电压相对于提供给有源区域的预定有功电流而改变，并且激光束已经通过透射型波长选择元件之后的激光束的输出强度由 光电探测器。

公开(公告)号：US20050094950A1

公开(公告)日：2005-05-05

申请号：US10991560

申请日：2004-11-18

申请人： Akihiro Morikawa ,  Yasuo Kitaoka ,  Kazuhisa Yamamoto ,  Shinichi Takigawa

发明人： Akihiro Morikawa ,  Yasuo Kitaoka ,  Kazuhisa Yamamoto ,  Shinichi Takigawa

IPC分类号： G02F1/37 ,  H01S5/022 ,  G02B6/36

CPC分类号： H01S5/02216 ,  G02F1/37 ,  H01S5/0092 ,  H01S5/0222 ,  H01S5/02248

摘要： In a short-wavelength laser module, long-term reliability is lost because of unnecessary gas deposited on the end face of its optical waveguide. A short-wavelength laser module has a package structure wherein a package lid used when the short-wavelength laser module is hermetically sealed does not make contact with internal gas, and a process of accelerating the polymerization of a securing agent used inside the package is incorporated, whereby unnecessary gas from the securing agent is eliminated and the long-term reliability of the output is attained.

摘要翻译： 在短波长激光器模块中，由于不必要的气体沉积在其光波导的端面上，所以长期可靠性丧失。 短波长激光器模块具有封装结构，其中当短波长激光器模块被气密密封时使用的封装盖不与内部气体接触，并且加入用于封装内部使用的固定剂聚合的过程 从而消除了来自固定剂的不必要的气体，并且实现了输出的长期可靠性。

公开(公告)号：US06847660B2

公开(公告)日：2005-01-25

申请号：US10220100

申请日：2001-12-27

申请人： Akihiro Morikawa ,  Yasuo Kitaoka ,  Kazuhisa Yamamoto ,  Shinichi Takigawa

发明人： Akihiro Morikawa ,  Yasuo Kitaoka ,  Kazuhisa Yamamoto ,  Shinichi Takigawa

IPC分类号： G02F1/37 ,  H01S5/022 ,  H01S3/30

CPC分类号： H01S5/02216 ,  G02F1/37 ,  H01S5/0092 ,  H01S5/0222 ,  H01S5/02248

摘要： In a short-wavelength laser module, long-term reliability is lost because of unnecessary gas deposited on the end face of its optical waveguide.A short-wavelength laser module has a package structure wherein a package lid used when the short-wavelength laser module is hermetically sealed does not make contact with internal gas, and a process of accelerating the polymerization of a securing agent used inside the package is incorporated, whereby unnecessary gas from the securing agent is eliminated and the long-term reliability of the output is attained.

摘要翻译： 在短波长激光模块中，由于不必要的气体沉积在其光波导的端面上，长期的可靠性丧失。短波长激光器模块具有封装结构，其中当短波长激光器模块 气密密封不与内部气体接触，并且结合加速包装内使用的固定剂的聚合的方法，从而消除了来自固定剂的不必要的气体，从而达到输出的长期可靠性。

公开(公告)号：US06819646B1

公开(公告)日：2004-11-16

申请号：US09484969

申请日：2000-01-18

申请人： Yasuo Kitaoka ,  Ken'ichi Kasazumi ,  Katsuhiko Kumagawa ,  Kazuhisa Yamamoto ,  Hidenori Wada

发明人： Yasuo Kitaoka ,  Ken'ichi Kasazumi ,  Katsuhiko Kumagawa ,  Kazuhisa Yamamoto ,  Hidenori Wada

IPC分类号： G11B700

CPC分类号： G11B7/13925 ,  G11B7/1275 ,  G11B7/1362 ,  G11B7/1367 ,  G11B7/1369 ,  G11B2007/0006

摘要： Laser beams respectively emitted from a SHG blue laser unit and a red semiconductor laser unit that have photo detectors respectively are turned into parallel lights by a collimator lens and then coupled by a dielectric multi-layer film mirror so as to be propagated on the same optical axis. The dielectric multi-layer film mirror is configured so as to transmit light with a wavelength of 500 nm or shorter and reflect light with a wavelength of 500 nm or longer for both P wave and S wave. The lights that are transmitted and reflected by the dielectric multi-layer film mirror pass through a polarizing hologram and a phase variable wave plate and are focused on an optical disk by an objective lens. In this manner, a simple configuration can realize a compatibility with many types of optical disks and a stable signal detection even when using a polarizing optical detection system.

摘要翻译： 分别从具有光电检测器的SHG蓝色激光单元和红色半导体激光单元分别发射的激光束通过准直透镜转换为平行光，然后通过电介质多层膜镜耦合，以便在相同的光学 轴。 介电多层膜反射镜被配置为透射波长为500nm或更短的光，并且对于P波和S波都反射波长为500nm或更长的光。 由电介质多层膜镜透射和反射的光通过偏振全息图和相位可变波片，并通过物镜聚焦在光盘上。 以这种方式，即使使用偏振光学检测系统，简单的配置也可以实现与许多类型的光盘的兼容性和稳定的信号检测。

公开(公告)号：US06621962B2

公开(公告)日：2003-09-16

申请号：US10321050

申请日：2002-12-16

申请人： Yasuo Kitaoka ,  Toshifumi Yokoyama ,  Kazuhisa Yamamoto

发明人： Yasuo Kitaoka ,  Toshifumi Yokoyama ,  Kazuhisa Yamamoto

IPC分类号： G02B626

CPC分类号： G02B6/42 ,  G02B6/4219 ,  G02B6/4231 ,  G02F1/37 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/83192 ,  H01S5/0092 ,  H01S5/02252 ,  H01S5/02272 ,  H01S5/0612 ,  H01S5/125

摘要： A semiconductor laser and an optical waveguide device with an optical waveguide formed at a surface of its substrate are provided on a submount. The semiconductor laser and the optical waveguide device are mounted with an active layer and a surface at which the optical waveguide is formed facing the submount, respectively. The submount is combined with the semiconductor laser or the optical waveguide device to form one body using an adhesive with a spacer, which maintains a substantially uniform distance therebetween, being interposed therebetween, so that position adjustment in the height direction can be made automatically and mounting can be carried out with high-precision optical coupling. Thus, an optical waveguide device integrated module and a method of manufacturing the same are provided, in which a semiconductor laser and a planar optical waveguide device are mounted with their positions in the height direction controlled with high precision.

摘要翻译： 半导体激光器和其基板表面上形成有光波导的光波导器件设置在基座上。 半导体激光器和光波导器件分别安装有有源层和形成面向子安装座的光波导的表面。 底座与半导体激光器或光波导器件组合，以使用具有间隔件的粘合剂形成一体，其间保持基本上均匀的间隔，从而可以自动地进行位置调节和高度方向的安装 可以用高精度光耦合进行。 因此，提供了一种光波导器件集成模块及其制造方法，其中半导体激光器和平面光波导器件以其精度高度控制的位置安装。

公开(公告)号：US07794539B2

公开(公告)日：2010-09-14

申请号：US10599501

申请日：2005-03-31

申请人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Yasuhito Takahashi

发明人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Yasuhito Takahashi

IPC分类号： C30B9/00 ,  C30B30/04 ,  C30B28/06 ,  C30B11/00

CPC分类号： C30B9/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1092 ,  Y10T117/1096

摘要： A method for producing Group-III-element nitride crystals by which an improved growth rate is obtained and large high-quality crystals can be grown in a short time, a producing apparatus used therein, and a semiconductor element obtained using the method and the apparatus are provided. The method is a method for producing Group-III-element nitride crystals that includes a crystal growth process of subjecting a material solution containing a Group III element, nitrogen, and at least one of alkali metal and alkaline-earth metal to pressurizing and heating under an atmosphere of a nitrogen-containing gas so that the nitrogen and the Group III element in the material solution react with each other to grow crystals. The method further includes, prior to the crystal growth process, a material preparation process of preparing the material solution in a manner that under an atmosphere of a nitrogen-containing gas, at least one of an ambient temperature and an ambient pressure is set so as to be higher than is set as a condition for the crystal growth process so that the nitrogen is allowed to dissolve in a melt containing the Group III element and the at least one of alkali metal and alkaline-earth metal. The method according to the present invention can be performed by using, for example, the producing apparatus shown in FIG. 7.

摘要翻译： 一种生产III族元素的氮化物晶体的方法，其中获得了改善的生长速率并且可以在短时间内生长大量的高质量晶体，其中使用的制造装置以及使用该方法和装置得到的半导体元件 被提供。 该方法是生产III族元素氮化物晶体的方法，其包括使含有III族元素，氮和至少一种碱金属和碱土金属的材料溶液经受加压和加热的晶体生长过程 含氮气体的气氛使得材料溶液中的氮和III族元素彼此反应生长晶体。 该方法还包括在晶体生长过程之前，制备材料制备方法，该方法是在含氮气体的气氛中，将环境温度和环境压力中的至少一种设定为 高于设定为晶体生长过程的条件，使得氮能够溶解在含有III族元素和碱金属和碱土金属中的至少一种的熔体中。 根据本发明的方法可以通过使用例如图1所示的制造装置来执行。 7。

公开(公告)号：US20090194763A1

公开(公告)日：2009-08-06

申请号：US12303472

申请日：2007-06-05

申请人： Norihisa Mino ,  Takayuki Takeuchi ,  Yasuo Kitaoka

发明人： Norihisa Mino ,  Takayuki Takeuchi ,  Yasuo Kitaoka

IPC分类号： H01L51/00 ,  H01L21/208 ,  H01L21/336 ,  H01L29/04 ,  H01L29/78

CPC分类号： H01L51/0558 ,  C30B7/005 ,  C30B29/54 ,  H01L51/0003 ,  H01L51/0545

摘要： A manufacturing method of a semiconductor element provided with a semiconductor layer containing a crystal of an organic semiconductor material of the invention includes the steps of (i) forming a frame (12) on a substrate (base) (11), and (ii) forming the semiconductor layer (crystal (13)) inside the frame (12). The step (ii) includes a crystal forming step in which a solution (21) containing the organic semiconductor material and a liquid medium is placed inside the frame (12) and then the crystal (13) is formed from the solution (21).

摘要翻译： 具有本发明的含有有机半导体材料的半导体层的半导体层的半导体元件的制造方法包括以下步骤：（i）在基板（基体）（11）上形成框架（12），（ii） 在框架（12）内形成半导体层（晶体（13））。 步骤（ii）包括晶体形成步骤，其中将含有有机半导体材料和液体介质的溶液（21）放置在框架（12）内，然后由溶液（21）形成晶体（13）。

公开(公告)号：US20080213158A1

公开(公告)日：2008-09-04

申请号：US12082745

申请日：2008-04-14

申请人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Hidekazu Umeda ,  Yasuhito Takahashi

发明人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Hidekazu Umeda ,  Yasuhito Takahashi

IPC分类号： C30B23/00 ,  C01B21/06

CPC分类号： C30B29/403 ,  C30B9/10 ,  C30B29/406 ,  C30B35/00 ,  Y10T117/1064 ,  Y10T117/1096

摘要： A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. For instance, crystals are grown using the apparatus of the present invention as follows. A crystal raw material (131) and gas containing nitrogen are introduced into a reactor vessel (120), to which heat is applied by a heater (110), and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device (180) to the reactor vessel (120) through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel (102) through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel (120) without passing through the pressure-resistant vessel (102), the mixture of impurities attached to the pressure-resistant vessel (102) and the like into the site of the crystal growth can be prevented. Further, since the gas flows through the reactor vessel (120), there is no aggregation of an evaporating alkali metal, etc., at the gas inlet or the like, and such an alkali metal does not flow into the gas supplying device (180). As a result, the quality of Group III nitride crystals obtained can be improved.

摘要翻译： 提供III族氮化物晶体的制造装置和制造III族氮化物晶体的方法，由此可以制造高质量的晶体。 例如，使用本发明的装置如下生长晶体。 将晶体原料（131）和含氮气体引入反应器容器（120）中，通过加热器（110）向其施加热量，并在施加压力的气氛中生长晶体。 气体通过反应器容器的气体入口从气体供给装置（180）引入反应器容器（120），然后通过反应器的气体出口被排出到耐压容器（102）的内部 反应堆容器。 由于气体不通过耐压容器（102）直接引入反应器容器（120），附着在耐压容器（102）等上的杂质混合物进入晶体生长位置可以 被阻止 此外，由于气体流过反应器容器（120），所以在气体入口等处没有蒸发的碱金属等的聚集，并且这种碱金属不会流入气体供给装置（180 ）。 结果，可以提高获得的III族氮化物晶体的质量。

公开(公告)号：US07227172B2

公开(公告)日：2007-06-05

申请号：US10969791

申请日：2004-10-19

申请人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Kazuyoshi Tsukamoto

发明人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Kazuyoshi Tsukamoto

IPC分类号： C30B1/00 ,  B32B9/00 ,  H01L21/26 ,  H01L21/42 ,  H01L21/324

CPC分类号： H01L33/32 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02625 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/02 ,  Y10S438/94 ,  Y10T428/24926

摘要： In a Group-III-element nitride semiconductor device including a Group-III-element nitride crystal layer stacked on a Group-III-element nitride crystal substrate, the substrate is produced by allowing nitrogen of nitrogen-containing gas and a Group III element to react with each other to crystallize in a melt (a flux) containing at least one of alkali metal and alkaline-earth metal, and a thin film layer is formed on the substrate and the thin film has a lower diffusion coefficient than that of the substrate with respect to impurities contained in the substrate. The present invention provides a semiconductor device in which alkali metal is prevented from diffusing.

摘要翻译： 在包含III族元素的氮化物晶体基板上堆叠的III族元素的氮化物晶体层的III族元素氮化物半导体器件中，通过使含氮气体和III族元素的氮 彼此反应以在含有碱金属和碱土金属中的至少一种的熔体（助熔剂）中结晶，并且在基板上形成薄膜层，并且薄膜的扩散系数比基板的扩散系数低 相对于底物中所含的杂质。 本发明提供了防止碱金属扩散的半导体器件。

公开(公告)号：US07221037B2

公开(公告)日：2007-05-22

申请号：US10757864

申请日：2004-01-15

申请人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Akihiko Ishibashi

发明人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Akihiko Ishibashi

IPC分类号： H01L29/12

CPC分类号： C30B25/02 ,  C30B19/00 ,  C30B29/403 ,  C30B29/406 ,  Y10S117/902

摘要： The present invention provides a method of manufacturing a Group III nitride substrate that has less variations in in-plane carrier concentration and includes crystals grown at a high growth rate. The manufacturing method of the present invention includes: (i) forming a semiconductor layer (a seed layer 12) on a substrate, with the semiconductor layer being formed of a semiconductor expressed by a composition formula of AluGavIn1−u−vN (wherein 0≦u≦1 and 0≦v≦1) and having a (0001) plane present at its surface; (ii) processing the surface of the semiconductor layer so that the surface becomes a plane sloped with respect to the (0001) plane of the semiconductor layer; and (iii) bringing the surface of the semiconductor layer into contact with a melt containing a solvent and at least one Group III element selected from gallium, aluminum, and indium, in an atmosphere containing nitrogen, to make the at least one Group III element and the nitrogen react with each other to grow Group III nitride crystals (GaN single crystals 13) on the semiconductor layer.

摘要翻译： 本发明提供一种制造面内载流子浓度变化小的III族氮化物衬底的方法，包括以高生长速率生长的晶体。 本发明的制造方法包括：（i）在基板上形成半导体层（种子层12），半导体层由以下组成式表示的半导体形成：半导体层 （其中0 <= u <= 1且0 <= v <= 1），并且在其表面上存在（0001）面 ; （ii）处理半导体层的表面，使得该表面成为相对于半导体层的（0001）面倾斜的平面; 和（iii）在含氮气氛中使半导体层的表面与含有溶剂和至少一种选自镓，铝和铟的III族元素的熔体接触，以制备至少一种III族元素 并且氮彼此反应以在半导体层上生长III族氮化物晶体（GaN单晶13）。