摘要:
A semiconductor integrated circuit includes a memory circuit, an oscillator circuit which generates an internal clock signal, based on control information held in the memory circuit, and a logic circuit which generates control information that causes the frequency of the internal clock signal to coincide with the frequency of an external clock signal. The internal clock signal is used for a synchronous operation of an internal circuit. Even if an error (undesired variation) occurs in the oscillation characteristic of the oscillator circuit due to process variations, it is possible to cause an internal clock signal frequency to coincide with an external clock signal frequency corresponding to a target frequency without the need for external attachment of a crystal oscillator and the input of an external clock signal.
摘要:
A semiconductor integrated circuit including an A/D converter capable of converting an analog signal accepted through an external terminal into a digital signal. The A/D converter includes: a ladder-type resistor for generating a reference voltage; a set of first operational amplifiers, each accepts an output voltage of the ladder-type resistor; a set of first switches, each capable of short-circuiting an input terminal and an output terminal of corresponding one of the first operational amplifiers thereby to allow an offset correction of the corresponding first operational amplifier to be made; and a comparator circuit for comparing an output voltage of each of the first operational amplifiers with the analog signal. The A/D converter can reduce a current output from the ladder-type resistor and speed up charge and discharge of the sampling capacitor.
摘要:
A semiconductor integrated circuit including an A/D converter capable of converting an analog signal accepted through an external terminal into a digital signal. The A/D converter includes: a ladder-type resistor for generating a reference voltage; a set of first operational amplifiers, each accepts an output voltage of the ladder-type resistor; a set of first switches, each capable of short-circuiting an input terminal and an output terminal of corresponding one of the first operational amplifiers thereby to allow an offset correction of the corresponding first operational amplifier to be made; and a comparator circuit for comparing an output voltage of each of the first operational amplifiers with the analog signal. The A/D converter can reduce a current output from the ladder-type resistor and speed up charge and discharge of the sampling capacitor.
摘要:
A microcomputer incorporating a flash memory which is erased and programmed electrically in a stable manner within a relatively wide range of external power supply voltages including those for low-voltage operations. The microcomputer comprises a voltage clamp unit including a reference voltage generating circuit and a constant voltage generating circuit. In operation, the voltage clamp unit generates a voltage of a low dependency on a supply voltage and clamps the generated voltage to a voltage level which, within a tolerable range, is lower than a single supply voltage externally furnished. This prevents voltages boosted by boosting circuits operating on the clamped voltage, i.e., programming and erasure voltages, from being dependent on the externally supplied voltage.
摘要:
A stator coil, being a rectangular coil, is wound on a salient pole, striding across a plurality of slots, while being inserted sequentially through the inlet of a predetermined slot of the stator core. The stator coil comprises two slot inserts and to be inserted into the slot; two coil ends and located outside the end of the slot; and four twist sections arranged between the slot inserts and coil ends, processed by twisting. In the twist sections, twisting is applied to ensure that the surface of the rectangular coil in the second coil end will be opposite to the surface of the rectangular coil in the first coil end. The start of winding of the rectangular coil and the end of winding of the same coil are located on the same surface. Thereby, a rotating electrical machine with the large internal dimensions without increasing the external dimensions can be permitted.
摘要:
A microcomputer incorporating a flash memory which is erased and programmed electrically in a stable manner within a relatively wide range of external power supply voltages including those for low-voltage operations The microcomputer comprises a voltage-clamp unit including a reference voltage generating circuit and a constant voltage generating circuit. In operation, the voltage clamp unit generates a voltage of a low dependency on a supply voltage and clamps the generated voltage to a voltage level which, within a tolerable range, is lower than a single supply voltage externally furnished. This prevents voltages boosted by boosting circuits operating on the clamped voltage, i.e., programming and erasure voltages, from being dependent on the externally supplied voltage.
摘要:
An analog switch and an analog multiplexer are realized by which electron charges which have been stored in a stray capacitance provided on the output side thereof before a switch is conducted do not give an adverse influence to a level of such an analog input voltage which is subsequently entered after the switch has been switched. An analog switch circuit is arranged by insulating gate type transistors and a voltage follower which is parallel-connected to these insulating type transistors. When the analog switch circuit is turned ON, the voltage follower is firstly brought into an active state, and thereafter, these insulating gate type transistors are brought into conductive conditions.
摘要:
In a structure 21 for connecting an electric wire and a connecting terminal in the invention, a ductile metal film 29 is formed in advance on an inner surface of a conductor caulking portion 24 of a crimp terminal 22 by such as plating, vacuum deposition, or adhesion. Then, the conductor caulking portion 24 in the rear portion of the crimp terminal 22 is caulked onto core wire portions M in a state of being stripped and extended in the axial direction from an end of a sheathed wire W to thereby establish connection. Subsequently, the metal film 29 is fused on heating. Accordingly, the ductile metal film 29 enters gaps between the inner surface of the conductor caulking portion 24 and the core wire portions M and between adjacent ones of the core wire portions M by the caulking stress. Hence, the area of contact between the conductor caulking portion 24 and the core wire portions M via the metal film 29 increases, and conductivity improves, thereby making it possible to suppress heat generation.
摘要:
An improved method of manufacturing a semiconductor device, especially suitable for a p-channel MOS transistor is disclosed. The method includes the steps of forming a gate oxide film over the surface of a semiconductor substrate in a region where a p-channel MOS transistor is to be formed, forming a polysilicon film over the gate oxide film, in order to construct a gate electrode, forming a film of an amorphous material over the polysilicon film and implanting ions of a p-type impurity, especially elemental boron atoms, into the polysilicon film, through the film of amorphous material.
摘要:
Ultrafine powder is stored in a pneumatic transportation tank (20), and is discharged to a transporting conduit (23) while being fluidized by the pressurized air fed through a fluidizing air port (24). The ultrafine powder is fed to a weigher (30) provided at the other end of the transporting conduit (23), at which the weight of the transported ultrafine powder is weighed by a load cell (31). After the weighed value reaches 90% of a predetermined value, the fed amount of the pneumatic transportation air is reduced, and a bypass regulating valve (38) is adjusted to thus decelerate the transportation. When the weighed value reaches 100% of the predetermined value, the discharge of the ultrafine powder to the transporting conduit (23) is stopped. This method and the apparatus enable the storage, quantitative batch transportation, and automatic weighing of the ultrafine powder such as silica fume.