公开(公告)号：US20160137515A1

公开(公告)日：2016-05-19

申请号：US14900016

申请日：2013-06-20

申请人： TECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY, CHINESE ACADEMY OF SCIENCES ,  FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER, CHINESE ACADEMY OF SCIENCES

发明人： Guochun ZHANG ,  Junhua LUO ,  Mingjun XIA ,  Sangen ZHAO ,  Yicheng WU

IPC分类号： C01B35/12 ,  C30B33/02 ,  C30B29/22 ,  C30B19/02 ,  C30B19/06

CPC分类号： C01B35/128 ,  C30B9/06 ,  C30B9/12 ,  C30B19/02 ,  C30B19/04 ,  C30B19/062 ,  C30B29/10 ,  C30B29/22 ,  C30B33/02

摘要： The present invention relates to the field of nonlinear optical crystal materials and provided herein a Li4Sr(BO3)2 compound, a Li4Sr(BO3)2 nonlinear optical crystal as well as preparation method and use thereof. The Li4Sr(BO3)2 nonlinear optical crystal has a second harmonic conversion efficiency at 1064 nm of about two times that of a KH2PO4 (KDP) crystal, and an UV absorption cut-off edge less than 190 nm. Furthermore, the crystal did not disintegrate. By flux method with Li2O, Li2O-B2O and Li2O-B2O3-LiF used as flux agent, large-size and transparent Li4Sr(BO3)2 nonlinear optical crystal can grow. The Li4Sr(BO3)2 crystal had stable physicochemical properties, moderate hardness, and was easy to cut, processing, preserve and use. Therefore it can be used for preparing nonlinear optical devices and thus for developing nonlinear optical applications in the ultraviolet and deep-ultraviolet band.

摘要翻译： 本发明涉及非线性光学晶体材料领域，本文提供了Li4Sr（BO3）2化合物，Li4Sr（BO3）2非线性光学晶体及其制备方法和用途。 Li4Sr（BO3）2非线性光学晶体在1064nm具有约为KH2PO4（KDP）晶体的二倍的二次谐波转换效率，以及小于190nm的UV吸收截止边。 此外，晶体没有分解。 通过Li2O，Li2O-B2O和Li2O-B2O3-LiF作为助熔剂的助熔剂，大尺寸和透明的Li4Sr（BO3）2非线性光学晶体可以生长。 Li4Sr（BO3）2晶体具有稳定的物理化学性质，硬度适中，易于切割，加工，保存和使用。 因此，它可以用于制备非线性光学器件，从而用于在紫外线和深紫外波段中开发非线性光学应用。

公开(公告)号：US20150225872A1

公开(公告)日：2015-08-13

申请号：US14424578

申请日：2013-08-30

申请人： NIPPON STEEL & SUMITOMO METAL CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Kazuhito Kamei ,  Kazuhiko Kusunoki ,  Nobuyoshi Yashiro ,  Nobuhiro Okada ,  Koji Moriguchi ,  Hironori Daikoku ,  Motohisa Kado ,  Hidemitsu Sakamoto

IPC分类号： C30B19/10 ,  C30B29/36 ,  C30B19/12 ,  C30B19/04 ,  C30B19/06

CPC分类号： C30B19/10 ,  C30B19/04 ,  C30B19/062 ,  C30B19/067 ,  C30B19/068 ,  C30B19/12 ,  C30B29/36

摘要： The production apparatus is used in production of single crystals by solution growth techniques. The production apparatus includes a seed shaft, a crucible, and a drive source. The seed shaft has a lower end surface to which a seed crystal is to be attached. The crucible contains a solution from which a single crystal is made. The drive source causes the crucible to rotate, and also varies the rotational speed of the crucible. The inner peripheral surface of the crucible includes a flow control surface which defines a non-circular cross-sectional shape. This single crystal production apparatus is capable of strongly stirring the solution contained in the crucible.

摘要翻译： 该生产设备用于通过溶液生长技术生产单晶。 生产设备包括种子轴，坩埚和驱动源。 种子轴具有要连接晶种的下端面。 坩埚含有一种从其制造单晶的溶液。 驱动源导致坩埚旋转，并且也改变了坩埚的转速。 坩埚的内周面包括限定非圆形横截面形状的流动控制表面。 该单晶制造装置能够强烈搅拌包含在坩埚中的溶液。

公开(公告)号：US20150017466A1

公开(公告)日：2015-01-15

申请号：US14380987

申请日：2013-03-11

申请人： Arturo A. Ayon ,  Ramakrishna Kotha ,  Diana Strickland

发明人： Arturo A. Ayon ,  Ramakrishna Kotha ,  Diana Strickland

IPC分类号： C30B19/12 ,  C30B23/02 ,  C30B19/06 ,  C30B30/02 ,  C30B29/66 ,  C30B29/68 ,  C30B29/58 ,  C30B29/52 ,  C30B19/10 ,  C30B23/08

CPC分类号： C30B29/10 ,  B32B15/017 ,  B32B15/018 ,  B82Y20/00 ,  B82Y40/00 ,  C09K13/00 ,  C23F1/02 ,  C23F1/20 ,  C23F1/44 ,  C30B19/06 ,  C30B19/103 ,  C30B19/12 ,  C30B23/02 ,  C30B23/025 ,  C30B23/08 ,  C30B29/06 ,  C30B29/52 ,  C30B29/58 ,  C30B29/607 ,  C30B29/66 ,  C30B29/68 ,  C30B30/02 ,  C30B33/10 ,  C30B33/12 ,  H01L21/3065 ,  H01L21/3083 ,  H01P11/00 ,  H01Q1/24 ,  H01Q3/01 ,  H01Q15/0086 ,  Y10T428/12361 ,  Y10T428/24322

摘要： A self-aligned tunable metamaterial is formed as a wire mesh. Self-aligned channel grids are formed in layers in a silicon substrate using deep trench formation and a high-temperature anneal. Vertical wells at the channels may also be etched. This may result in a three-dimensional mesh grid of metal and other material. In another embodiment, metallic beads are deposited at each intersection of the mesh grid, the grid is encased in a rigid medium, and the mesh grid is removed to form an artificial nanocrystal.

摘要翻译： 自对准可调谐超材料形成为丝网。 使用深沟槽形成和高温退火在硅衬底中以层的形式形成自对准沟道栅。 通道上的垂直孔也可以被蚀刻。 这可能导致金属和其他材料的三维网格。 在另一个实施例中，在网格的每个交叉处沉积金属珠，网格被包裹在刚性介质中，并且网格被去除以形成人造纳米晶体。

公开(公告)号：US08871169B2

公开(公告)日：2014-10-28

申请号：US14057371

申请日：2013-10-18

申请人： AMG IdealCast Solar Corporation

发明人： Nathan G. Stoddard ,  Roger F. Clark

IPC分类号： C01B33/02 ,  C30B19/06 ,  C30B29/06 ,  C30B11/00 ,  F27B14/06 ,  H01L31/18 ,  C30B11/02

CPC分类号： C30B11/003 ,  C30B11/02 ,  C30B19/067 ,  C30B29/06 ,  F27B14/06 ,  H01L31/0312 ,  H01L31/036 ,  H01L31/1804 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T117/1092 ,  Y10T428/12528

摘要： Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With these methods, an ingot can be grown that is low in carbon and whose crystal growth is controlled to increase the cross-sectional area of seeded material during casting.

摘要翻译： 提供了用于铸造用于光伏电池的硅和其他应用的方法和装置。 利用这些方法，可以生长低碳的晶锭，并且其晶体生长被控制以增加在铸造期间接种材料的横截面积。

公开(公告)号：US20140158041A1

公开(公告)日：2014-06-12

申请号：US14131295

申请日：2012-07-25

申请人： Michel Bruel

发明人： Michel Bruel

IPC分类号： C30B19/10 ,  C30B19/06

CPC分类号： C30B19/10 ,  C30B19/00 ,  C30B19/062 ,  C30B29/06 ,  C30B29/08 ,  H01L21/02532 ,  H01L21/02625

摘要： The invention concerns a method for fabricating a substrate in semiconductor material characterized in that it comprises the steps of: starting from a donor substrate in a first semiconductor material at an initial temperature, contacting a surface of the donor substrate with a bath of a second semiconductor material held in the liquid state at a temperature higher than the initial temperature, the second semiconductor material being chosen so that its melting point is equal to or lower than the melting point of the first semiconductor material, solidifying the bath material on the surface to thicken the donor substrate with a solidified layer. The invention also concerns a device for implementing the method.

摘要翻译： 本发明涉及一种用于制造半导体材料中的衬底的方法，其特征在于其包括以下步骤：从初始温度下的第一半导体材料中的施主衬底开始，将供体衬底的表面与第二半导体 在高于初始温度的温度下保持在液态的材料，选择第二半导体材料使其熔点等于或低于第一半导体材料的熔点，使表面上的浴材固化成稠化 施主衬底具有固化层。 本发明还涉及一种用于实现该方法的装置。

公开(公告)号：US20050011432A1

公开(公告)日：2005-01-20

申请号：US10884252

申请日：2004-07-02

申请人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B19/04 ,  C30B19/06 ,  C30B19/00

CPC分类号： C30B29/403 ,  C30B19/04 ,  C30B19/06 ,  C30B29/406

摘要： The present invention provides a method of manufacturing Group III nitride crystals that are of high quality, are manufactured efficiently, and are useful and usable as a substrate for semiconductor manufacturing processes. A semiconductor layer that is made of a semiconductor and includes crystal-nucleus generation regions at its surface is formed. The semiconductor is expressed by a composition formula of AluGavIn1-u-vN (where 0≦u≦1, 0≦v≦1, and u+v≦1). Group III nitride crystals then are grown on the semiconductor layer by bringing the crystal-nucleus generation regions of the semiconductor layer into contact with a melt in an atmosphere including nitrogen. The melt contains nitrogen, at least one Group III element selected from the group consisting of gallium, aluminum, and indium, and at least one of alkali metal and alkaline-earth metal.

摘要翻译： 本发明提供一种制造高品质的III族氮化物晶体的方法，其有效制造，并且可用作半导体制造工艺的基板。 形成由半导体构成的半导体层，其表面具有晶核生成区域。 半导体由AluGavIn1-u-vN的组成式表示（其中0 <= u <= 1,0 <= v <= 1，u + v <= 1）。 然后通过在包括氮气的气氛中使半导体层的晶核生成区域与熔体接触，在半导体层上生长III族氮化物晶体。 熔体含有氮，至少一种选自镓，铝和铟的III族元素，以及碱金属和碱土金属中的至少一种。

公开(公告)号：US5712199A

公开(公告)日：1998-01-27

申请号：US466761

申请日：1995-06-06

申请人： Katsumi Nakagawa ,  Takao Yonehara

发明人： Katsumi Nakagawa ,  Takao Yonehara

IPC分类号： H01L31/04 ,  C30B15/00 ,  C30B15/34 ,  C30B19/06 ,  H01L21/208 ,  H01L31/0392 ,  H01L31/18

CPC分类号： H01L31/1876 ,  C30B15/007 ,  C30B15/34 ,  H01L31/0392 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of making a semiconductor body includes the steps of preparing a sheet-like substrate having an insulating film and holes which pass through the insulating film, the holes being disposed at a uniform density, preparing a solution in which a semiconductor material is dissolved, and conveying the sheet-like substrate along a surface of the solution so as to grow a single crystal nucleus from each of the holes and thereby form a set of single crystal semiconductors on the sheet-like substrate. A solar cell can be manufactured by forming a semiconductor active area on the sheet-like support member made of a conductive material by a process containing the above-described semiconductor body forming method, and then by forming an electrode which makes a pair with the sheet-like support member.

摘要翻译： 制造半导体本体的方法包括以下步骤：制备具有绝缘膜的片状基材和穿过绝缘膜的孔，孔以均匀的密度设置，制备半导体材料溶解的溶液， 并且沿着溶液的表面输送片状基材，以从每个孔生长单晶核，从而在片状基材上形成一组单晶半导体。 可以通过通过包含上述半导体本体形成方法的工艺在由导电材料制成的片状支撑构件上形成半导体有源区域来制造太阳能电池，然后通过形成与片材成对的电极 类支撑构件。

公开(公告)号：US5334278A

公开(公告)日：1994-08-02

申请号：US752856

申请日：1991-08-30

申请人： Song J. Lee

发明人： Song J. Lee

IPC分类号： C30B19/00 ,  C30B19/06 ,  H01L21/208

CPC分类号： C30B19/063

摘要： The liquid-phase epitaxy system having the LPE boat consists of of a slider section, a source holder section, and a contacting well section, in which the distance between the first two contacting wells is different from that between the first two source holding wells, so that the concentration of the solutions can be controlled by the proper temperature profile, since the solution for melt-etch and the remaining solution for the epitaxial growth are not filled into the contacting wells at the same time.Thus, the present invention can easily perform the in-situ melt-etch and can improve the quality of the epitaxial layer and the epitaxial yield by minimizing the contamination of the melt-etched surface of the substrate.

摘要翻译： 具有LPE舟的液相外延系统由滑块部分，源支架部分和接触井部分组成，其中前两个接触井之间的距离与前两个源保持井之间的距离不同， 因此溶液的浓度可以通过适当的温度分布来控制，因为用于熔融蚀刻的溶液和用于外延生长的剩余溶液不会同时填充到接触孔中。 因此，本发明可以容易地进行原位熔融蚀刻，并且可以通过使衬底的熔融蚀刻表面的污染最小化来提高外延层的质量和外延产率。

公开(公告)号：US5264190A

公开(公告)日：1993-11-23

申请号：US866489

申请日：1992-04-10

申请人： Masatosi Kobayashi ,  Yoshiharu Komine

发明人： Masatosi Kobayashi ,  Yoshiharu Komine

IPC分类号： C30B19/04 ,  C30B19/06 ,  H01L21/368

CPC分类号： H01L21/02625 ,  C30B19/04 ,  C30B19/063 ,  C30B29/48 ,  H01L21/02411 ,  H01L21/02562

摘要： An apparatus for liquid phase epitaxial film growth includes a mother boat for supporting a substrate, a melt boat slidable on the mother boat for containing a melt and selectively bringing the substrate and the melt into contact, and a lid for opening and closing the melt boat. The mother boat is disposed in a quartz tube and push rods extend into the tube for sliding the lid to open and close the melt boat.

摘要翻译： 一种用于液相外延膜生长的装置包括用于支撑基底的母船，可在母船上滑动以容纳熔体并且选择性地使基底和熔体接触的熔体舟和用于打开和关闭熔体舟的盖 。 母船设置在石英管中，推杆延伸到管中以滑动盖以打开和关闭熔体船。

公开(公告)号：US4828648A

公开(公告)日：1989-05-09

申请号：US157557

申请日：1988-02-19

申请人： Theodore J. La Chapelle, Jr. ,  Thomas P. Weismuller

发明人： Theodore J. La Chapelle, Jr. ,  Thomas P. Weismuller

IPC分类号： C30B19/04 ,  C30B19/06

CPC分类号： C30B19/061 ,  C30B19/04 ,  C30B29/48

摘要： An apparatus and method for performing liquid phase epitaxy, mercury containment, substrate leveling, in situ annealing/doping and gas flushing in a liquid phase epitaxy growth of HgCdTe. The apparatus is a self contained unit comprising a transparent cover for providing access to the interior of the apparatus and for forming a gas impermeable seal between the apparatus and the cover. The apparatus also contains a leveling apparatus, a gas flushing apparatus, and an apparatus for the in situ doping/quench annealing of HgCdTe epitaxial films. The leveling apparatus comprising channels and leveling balls that travel therein which align themselves between scribe marks when the apparatus is in a level position. The gas flushing apparatus is comprised of a gaseous purge ball valve that opens and seals a flushing channel that lead from the interior of the invention to the external environment. The in situ doping/quench annealing apparatus is accomplished via a stabilized chamber ball valve which operates independently with respect to the gaseous purge ball valve, thereby allowing in situ doping leveling without effecting the atmospheric integrity of the vessel.

摘要翻译： 一种用于在HgCdTe的液相外延生长中进行液相外延，汞封存，基板流平，原位退火/掺杂和气体冲洗的装置和方法。 该装置是一种自包含单元，包括透明盖，用于提供对装置内部的通路，并在装置和盖之间形成气体不可渗透的密封。 该装置还包含调平装置，气体冲洗装置和用于HgCdTe外延膜的原位掺杂/淬火退火的装置。 调平装置包括在其中行进的通道和调平球，当装置处于水平位置时，它们在划痕之间对齐。 气体冲洗装置由气体吹扫球阀组成，该气体吹扫球阀将从本发明的内部引导到外部环境的冲洗通道打开并密封。 原位掺杂/淬火退火装置通过稳定的室球阀实现，该稳定室球阀相对于气体吹扫球阀独立地操作，从而允许原位掺杂流平而不影响容器的大气完整性。