摘要:
A heat sink fin that has a first substrate. The first substrate includes a first angular dimple and a first micro air channel in fluid communication with the first angular dimple. The first angular dimple includes a first surface that forms an angle relative to a first plane of the first substrate. The first angular dimple includes a first micro diameter hole in fluid communication with the first angular dimple. The heat sink fin also has a second substrate folded against the first substrate. The second substrate includes a second angular dimple and a second micro air channel in fluid communication with the second angular dimple. The second angular dimple includes a second surface that forms an angle relative to a second plane of the second substrate. The second angular dimple includes a second micro diameter hole in fluid communication with the second angular dimple.
摘要:
A member for a semiconductor manufacturing apparatus includes an AlN electrostatic chuck, a cooling plate, and a cooling plate-chuck bonding layer. The cooling plate includes first to third substrates, a first metal bonding layer between the first and second substrates, a second metal bonding layer between the second and third substrates, and a refrigerant path. The first to third substrates are formed of a dense composite material containing SiC, Ti3SiC2, and TiC. The metal bonding layers are formed by thermal compression bonding of the substrates with an Al—Si—Mg metal bonding material interposed between the first and second substrates and between the second and third substrates.
摘要翻译:半导体制造装置的构件包括AlN静电卡盘,冷却板和冷却板卡盘接合层。 冷却板包括第一至第三基板,第一和第二基板之间的第一金属接合层,第二和第三基板之间的第二金属接合层和制冷剂路径。 第一至第三衬底由含有SiC,Ti 3 SiC 2和TiC的致密复合材料形成。 金属接合层通过基板与介于第一和第二基板之间以及第二和第三基板之间的Al-Si-Mg金属接合材料的热压接而形成。
摘要:
A member for a semiconductor manufacturing apparatus includes an alumina electrostatic chuck, a cooling plate, and a cooling plate-chuck bonding layer. The cooling plate includes first to third substrates, a first metal bonding layer between the first and second substrates, a second metal bonding layer between the second and third substrates, and a refrigerant path. The first to third substrates are formed of a dense composite material containing Si, SiC, and Ti. The metal bonding layers are formed by thermal compression bonding of the substrates with an Al—Si—Mg or Al—Mg metal bonding material interposed between the first and second substrates and between the second and third substrates.
摘要:
Provided is a packed heat exchanger bed composed of thermomagnetic material particles having a mean particle diameter of 50 μm to 1 mm. The packed bed has porosity of 30-45%. A thermomagnetic material is a metal containing material such as (AyB1-y)2+δCwDxEz, La(FexAl1-x)13Hy or La(FexSi1-x)13Hy, La(FexAlyCoz)13 or La(FeSiyCoz)13, LaMnxFe2-xGe, Heusler alloys, Gd5(SixGe1-x)4, Fe2P-based compounds, manganites of the perovskite type, Tb5(Si4-xGex), XTiGe, Mn2-xZxSb, or Mn2ZxSb1-x, wherein A- E, P, and Z represent various metal atoms.
摘要:
A heat pipe heat dissipation structure includes a main body. The main body has an evaporation section, a condensation section, a chamber filled with a working fluid and at least one first capillary structure. The first capillary structure is disposed on an inner wall face of the chamber. The first capillary structure has at least one swelling capillary section. The swelling capillary section swells from a part of the first capillary structure in the evaporation section.
摘要:
An apparatus includes a heat transfer structure configured to be disposed at least partially within an enclosure of a fixed bed reactor and operable to transfer heat from a heat source to a heat sink. The heat transfer structure includes a plurality of fins each fin including a first end and a second end, the first end contacting an inner surface of the enclosure of the fixed bed reactor, the second end at least partially enclosed within the enclosure of the fixed bed reactor. A path of at least one of the plurality of fins comprises the shortest possible length between the first end of the at least one of the plurality of fins and the second end of the at least one of the plurality of fins.
摘要:
A heat dissipation device assembly structure includes a heat dissipation unit and at least one fastening member. The heat dissipation unit has a bottom face and a locating section. The locating section is formed with at least one channel in communication with the bottom face. The fastening member is assembled on the bottom face. The fastening member has at least one latch section correspondingly inserted in the locating section. The fastening member further has at least one locking section on one side of the fastening member, which side is distal from the bottom face. The fastening member can be quickly assembled with the heat dissipation unit by means of inserting the latch section into the locating section of the heat dissipation unit. The heat dissipation device assembly structure has higher heat dissipation efficiency and is free from welding process so that the welding cost is saved.
摘要:
A wall-mounted radiator comprising a support (1) adapted to make it tilting with respect to a support wall and possibly comprising blocking means (2) of the radiator to maintain it in a proximal or distal position with respect to said support wall. The support may be adapted to be associated with the radiator (3) so as to allow to adjust the fastening point so as to facilitate the installation thereof. Moreover, the support (1) may comprise a removable part (11c) in order to further simplify the installation of the radiator.
摘要:
A method of lowering a temperature of a substrate table uses a substrate W processing system including a first substrate table 2b; one or more processing chambers 1b, in each of which the first substrate table 2b is disposed, the processing chamber being configured to perform a predetermined process, with the substrate being placed on the first substrate table 2b; a substrate transfer apparatus 31 configured to transfer the substrate to the processing chamber 1b; a transfer chamber in which the substrate transfer apparatus 31 is disposed; and a second substrate table configured to cool the substrate. The method of lowering a temperature of a substrate table comprises the steps of first transfer in which the substrate W placed on the first substrate table 2b is transferred to the second substrate table by the substrate transfer apparatus 31, and second transfer in which the substrate placed on the second substrate table is transferred to the first substrate table 2b. By repeating the step of first transfer and the step of second transfer, a heat of the first substrate table 2b is absorbed by the substrate W placed on the first substrate table 2b, so that a temperature of the first substrate table 2b is lowered.
摘要:
Embodiments of apparatuses and methods for controlling heat for rapid thermal processing of carbonaceous material are provided herein. The apparatus comprises a reheater for containing a fluidized bubbling bed comprising an oxygen-containing gas, inorganic heat carrier particles, and char and for burning the char into ash to form heated inorganic particles. An inorganic particle cooler is in fluid communication with the reheater to receive a first portion of the heated inorganic particles. The inorganic particle cooler is configured to receive a cooling medium for indirect heat exchange with the first portion of the heated inorganic particles to form first partially-cooled heated inorganic particles that are fluidly communicated to the reheater and combined with a second portion of the heated inorganic particles to form second partially-cooled heated inorganic particles. A reactor is in fluid communication with the reheater to receive the second partially-cooled heated inorganic particles.