公开(公告)号：US20110209762A1

公开(公告)日：2011-09-01

申请号：US13067100

申请日：2011-05-09

Applicant: Bang Lin Lee ,  Eun Kyung Lee ,  Joo Young Kim ,  Kook Min Han

Inventor： Bang Lin Lee ,  Eun Kyung Lee ,  Joo Young Kim ,  Kook Min Han

IPC: H01L51/46 ,  H01L51/30 ,  H01L51/54 ,  C08G75/32 ,  H01L51/48 ,  H01L51/40

CPC classification number: C07D417/04 ,  C07D417/14 ,  C07D421/14 ,  H01L51/0036 ,  H01L51/0512 ,  Y02E10/549

Abstract: Disclosed herein is a composition containing hetero arylene or arylene showing a p-type semiconductor property in addition to thiophene showing a p-type semiconductor property and thiazole rings showing a n-type semiconductor property at a polymer main chain, an organic semiconductor polymer containing the composition, an organic active layer containing the organic semiconductor polymer, an organic thin film transistor (OTFT) containing the organic active layer, an electronic device containing the OTFT, and a method of preparing the same. The composition of example embodiments, which is used in an organic semiconductor polymer and contains thiazole rings, may exhibit increased solubility to an organic solvent, coplanarity, processability and an improved thin film property.

Abstract translation: 本文公开了含有异亚芳基或亚芳基的组合物，除了显示p型半导体性质的噻吩外还显示p型半导体性质，在聚合物主链上显示出n型半导体性质的噻唑环，含有 含有有机半导体聚合物的有机活性层，含有机活性层的有机薄膜晶体管（OTFT），含OTFT的电子器件及其制备方法。 用于有机半导体聚合物并含有噻唑环的示例性实施方案的组合物可以表现出对有机溶剂的增加的溶解性，共面性，可加工性和改善的薄膜性质。

公开(公告)号：US20110204350A1

公开(公告)日：2011-08-25

申请号：US13067002

申请日：2011-05-02

Applicant: Jung Seok Hahn ,  Eun Kyung Lee ,  Sang Yoon Lee ,  Eun Jeong Jeong ,  Joo Young Kim

Inventor： Jung Seok Hahn ,  Eun Kyung Lee ,  Sang Yoon Lee ,  Eun Jeong Jeong ,  Joo Young Kim

IPC: H01L51/10 ,  C08K5/5455 ,  C08K5/5465

CPC classification number: H01L51/052

Abstract: Disclosed is a composition, an organic insulating film including the same, an organic thin film transistor including the organic insulating film, an electronic device including the organic thin film transistor and methods of fabricating the same. In the composition, an organic polymer material having a carboxyl group and an organic silane material having an electron-donating group are included to thus realize a structure which may further stabilize an unreacted crosslinking material. Thereby, a hysteresis phenomenon may be decreased and transparency may be increased, thus making it possible to assure stability upon exposure to air. Accordingly, the lifetime of the organic thin film transistor may be lengthened.

Abstract translation: 公开了组合物，包含该有机绝缘膜的有机绝缘膜，包括有机绝缘膜的有机薄膜晶体管，包括有机薄膜晶体管的电子器件及其制造方法。 在该组合物中，包括具有羧基的有机聚合物材料和具有给电子基团的有机硅烷材料，从而实现可以进一步稳定未反应的交联材料的结构。 因此，滞后现象可能会降低，并且可能增加透明度，从而可以确保暴露在空气中时的稳定性。 因此，有机薄膜晶体管的寿命可以延长。

公开(公告)号：US07960251B2

公开(公告)日：2011-06-14

申请号：US11447328

申请日：2006-06-06

Applicant: Byoung Lyong Choi ,  Jong Min Kim ,  Eun Kyung Lee

Inventor： Byoung Lyong Choi ,  Jong Min Kim ,  Eun Kyung Lee

IPC: H01L21/20

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  C30B29/60 ,  H01L29/0673 ,  H01L29/0676 ,  Y10T428/249994

Abstract: Disclosed herein is a method for producing nanowires. The method comprises the steps of providing a porous template with a plurality of holes in the form of tubes, filling the tubes with nanoparticles or nanoparticle precursors, and forming the filled nanoparticles or nanoparticle precursors into nanowires. According to the method, highly rectilinear and well-ordered nanowires can be produced in a simple manner.

Abstract translation: 本文公开了一种生产纳米线的方法。 该方法包括以下步骤：提供具有管形式的多个孔的多孔模板，用纳米颗粒或纳米颗粒前体填充管，并将填充的纳米颗粒或纳米颗粒前体形成纳米线。 根据该方法，可以以简单的方式制备高度直线和有序的纳米线。

公开(公告)号：US20100309292A1

公开(公告)日：2010-12-09

申请号：US12745099

申请日：2008-11-28

Applicant: Yo-Sung HO ,  Eun-Kyung Lee ,  Sung-Yeol Kim

Inventor： Yo-Sung HO ,  Eun-Kyung Lee ,  Sung-Yeol Kim

IPC: H04N13/02 ,  G06K9/00

CPC classification number: G06T7/55 ,  H04N13/261

Abstract: There are provided a method and an apparatus for generating a multi-viewpoint depth map, and a method for generating a disparity of a multi-viewpoint image. A method for generating a multi-viewpoint depth map according to the present invention includes the steps of: (a) acquiring a multi-viewpoint image constituted by a plurality of images by using a plurality of cameras (b) acquiring an image and depth information by using a depth camera; (c) estimating coordinates of the same point in a space in the plurality of images by using the acquired depth information; (d) determining disparities in the plurality of images with respect to in the same point by searching a predetermined region around the estimated coordinates; and (e) generating a multi-viewpoint depth map by using the determined disparities. According to the above-mentioned present invention, it is possible to generate a multi-viewpoint depth map within a shorter time and generate a multi-viewpoint depth map having higher quality than a multi-viewpoint depth map generated by using known stereo matching.

Abstract translation: 提供了一种用于生成多视点深度图的方法和装置，以及用于产生多视点图像的视差的方法。 根据本发明的用于生成多视点深度图的方法包括以下步骤：（a）通过使用多个照相机（b）获取由多个图像构成的多视点图像（b）获取图像和深度信息 通过使用深度相机; （c）通过使用获取的深度信息估计多个图像中的空间中的相同点的坐标; （d）通过搜索估计坐标周围的预定区域来确定在相同点上的多个图像中的差异; 和（e）通过使用确定的差异来生成多视点深度图。 根据上述本发明，可以在更短的时间内生成多视点深度图，并且生成比通过使用已知的立体匹配产生的多视点深度图具有更高质量的多视点深度图。

公开(公告)号：US20100218562A1

公开(公告)日：2010-09-02

申请号：US12660488

申请日：2010-02-26

Applicant: Eun Kyung Lee

Inventor： Eun Kyung Lee

IPC: D04B1/22

CPC classification number: D04B1/225 ,  D04B1/12

Abstract: A method for making a seamless knit belt including forming two longitudinal rib sections that are formed from a different material than the body of the belt. The rib sections are formed during the tubular knitting process and then the body of the knit composite is run through a polymeric treating system. After the body is treated, the rib sections are trimmed from the edges and the resulting product is a coated seamless knit belt.

Abstract translation: 一种用于制造无缝针织带的方法，包括形成由与带的主体不同的材料形成的两个纵向肋部分。 在管状编织过程中形成肋部分，然后针织复合材料的主体穿过聚合物处理系统。 在处理身体后，从边缘修剪肋部分，并且所得到的产品是涂覆的无缝针织带。

公开(公告)号：US20100213438A1

公开(公告)日：2010-08-26

申请号：US12708664

申请日：2010-02-19

Applicant: Kyung-sang CHO ,  Byoung-lyong CHOI ,  Eun-kyung LEE ,  Tae-ho KIM ,  Sang-jin LEE

Inventor： Kyung-sang CHO ,  Byoung-lyong CHOI ,  Eun-kyung LEE ,  Tae-ho KIM ,  Sang-jin LEE

IPC: H01L33/06

CPC classification number: H01L51/502 ,  B82Y20/00 ,  B82Y30/00 ,  H01L33/14 ,  H01L51/0003 ,  H01L51/0007 ,  H01L51/5036 ,  H01L51/5048 ,  H01L51/5096

Abstract: A quantum dot light emitting device includes; a substrate, a first electrode disposed on the substrate, a second electrode disposed substantially opposite to the first electrode, a first charge transport layer disposed between the first electrode and the second electrode, a quantum dot light emitting layer disposed between the first charge transport layer and one of the first electrode and the second electrode, and at least one quantum dot including layer disposed between the quantum dot light emitting layer and the first charge transport layer, wherein the at least one quantum dot including layer has an energy band level different from an energy band level of the quantum dot light emitting layer.

Abstract translation: 量子点发光器件包括： 衬底，设置在衬底上的第一电极，与第一电极基本相对设置的第二电极，设置在第一电极和第二电极之间的第一电荷传输层，设置在第一电荷传输层之间的量子点发光层 和第一电极和第二电极中的一个以及设置在量子点发光层和第一电荷传输层之间的至少一个量子点包括层，其中所述至少一个量子点包含层具有与 量子点发光层的能带水平。

公开(公告)号：US20100144126A1

公开(公告)日：2010-06-10

申请号：US12708007

申请日：2010-02-18

Applicant: Eun Kyung LEE ,  Byoung Lyong CHOI ,  Young KUK ,  Je Hyuk CHOI ,  Hun Huy JUNG

Inventor： Eun Kyung LEE ,  Byoung Lyong CHOI ,  Young KUK ,  Je Hyuk CHOI ,  Hun Huy JUNG

IPC: H01L21/203

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/02538 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0673 ,  H01L31/035281 ,  H01L33/08 ,  H01L33/20 ,  Y10S977/70 ,  Y10S977/762 ,  Y10S977/84

Abstract: Methods for the site-selective growth of horizontal nanowires are provided. According to the methods, horizontal nanowires having a predetermined length and diameter can be grown site-selectively at desired sites in a direction parallel to a substrate to fabricate a device with high degree of integration. Further provided are nanowires grown by the methods and nanodevices comprising the nanowires.

Abstract translation: 提供了水平纳米线场地选择性生长的方法。 根据该方法，具有预定长度和直径的水平纳米线可以在平行于基板的方向上在所需位置选择性地生长，从而制造具有高集成度的装置。 还提供了通过包括纳米线的方法和纳米器件生长的纳米线。

公开(公告)号：US20100109074A1

公开(公告)日：2010-05-06

申请号：US12654029

申请日：2009-12-08

Applicant: Kwang-Soo Seol ,  Byung-Kl Kim ,  Eun-Kyung Lee ,  Yo-Sep Min ,  Kyung-Sang Cho ,  Jae-Ho Lee ,  Jae-Young Choi

Inventor： Kwang-Soo Seol ,  Byung-Kl Kim ,  Eun-Kyung Lee ,  Yo-Sep Min ,  Kyung-Sang Cho ,  Jae-Ho Lee ,  Jae-Young Choi

IPC: H01L29/792

CPC classification number: H01L29/42332 ,  B82Y10/00 ,  H01L29/40114 ,  H01L29/42348

Abstract: A gate structure using nanodots as a trap site, a semiconductor device having the gate structure and methods of fabricating the same are provided. The gate structure may include a tunneling layer, a plurality of nanodots on the tunneling layer, and a control insulating layer including a high-k dielectric layer on the tunneling layer and the nanodots. A semiconductor memory device may further include a semiconductor substrate, the gate structure according to example embodiments on the semiconductor substrate and a first impurity region and a second impurity region in the semiconductor substrate, wherein the gate structure is in contact with the first and second impurity regions.

Abstract translation: 提供了使用纳米点作为陷阱位置的栅极结构，具有栅极结构的半导体器件及其制造方法。 栅极结构可以包括隧道层，隧道层上的多个纳米点，以及在隧道层和纳米点上包括高k电介质层的控制绝缘层。 半导体存储器件还可以包括半导体衬底，半导体衬底上的示例性实施例的栅极结构和半导体衬底中的第一杂质区和第二杂质区，其中栅极结构与第一和第二杂质接触 地区。

公开(公告)号：US07696097B2

公开(公告)日：2010-04-13

申请号：US12051513

申请日：2008-03-19

Applicant: Eun Kyung Lee ,  Byoung Lyong Choi ,  Young Kuk ,  Je Hyuk Choi ,  Hun Huy Jung

Inventor： Eun Kyung Lee ,  Byoung Lyong Choi ,  Young Kuk ,  Je Hyuk Choi ,  Hun Huy Jung

IPC: H01L29/06 ,  H01L21/311

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/02538 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0673 ,  H01L31/035281 ,  H01L33/08 ,  H01L33/20 ,  Y10S977/70 ,  Y10S977/762 ,  Y10S977/84

Abstract: Methods for the site-selective growth of horizontal nanowires are provided. According to the methods, horizontal nanowires having a predetermined length and diameter can be grown site-selectively at desired sites in a direction parallel to a substrate to fabricate a device with high degree of integration. Further provided are nanowires grown by the methods and nanodevices comprising the nanowires.

Abstract translation: 提供了水平纳米线场地选择性生长的方法。 根据该方法，具有预定长度和直径的水平纳米线可以在平行于基板的方向上在所需位置选择性地生长，从而制造具有高集成度的装置。 还提供了通过包括纳米线的方法和纳米器件生长的纳米线。

公开(公告)号：US07662300B1

公开(公告)日：2010-02-16

申请号：US11444116

申请日：2006-05-31

Applicant: Kyung Sang Cho ,  Byoung Lyong Choi ,  Eun Kyung Lee ,  Soon Jae Kwon ,  Jae Ho Lee

Inventor： Kyung Sang Cho ,  Byoung Lyong Choi ,  Eun Kyung Lee ,  Soon Jae Kwon ,  Jae Ho Lee

IPC: B31D3/00

CPC classification number: B01D67/0058 ,  B01D67/003 ,  B01D2323/24 ,  B01D2323/35 ,  B22F2998/10 ,  C22C1/08 ,  C30B11/12 ,  C30B29/60 ,  B22F9/02 ,  C22C47/025 ,  B22F3/1134

Abstract: Disclosed herein is a method for preparing a porous material using nanostructures. The method comprises the steps of producing nanostructures using a porous template, dispersing the nanostructures in a source or precursor material for the porous material, aligning the nanostructures in a particular direction, and removing the nanostructures by etching. According to the method, the size, shape, orientation and regularity of pores of the porous material can be easily controlled, and the preparation of the porous material is simplified, leading to a reduction in preparation costs.Further disclosed is a porous material prepared by the method.

Abstract translation: 本文公开了使用纳米结构制备多孔材料的方法。 该方法包括以下步骤：使用多孔模板制备纳米结构，将纳米结构分散在用于多孔材料的源或前体材料中，使纳米结构沿特定方向对齐，并通过蚀刻去除纳米结构。 根据该方法，可以容易地控制多孔材料的孔的尺寸，形状，取向和规则性，并且简化多孔材料的制备，导致制备成本的降低。 还公开了通过该方法制备的多孔材料。