公开(公告)号：US20110143467A1

公开(公告)日：2011-06-16

申请号：US13059213

申请日：2008-08-22

申请人： Chuanbing Xiong ,  Fengyi Jiang ,  Li Wang ,  Shaohua Zhang ,  Guping Wang ,  Guangxu Wang

发明人： Chuanbing Xiong ,  Fengyi Jiang ,  Li Wang ,  Shaohua Zhang ,  Guping Wang ,  Guangxu Wang

IPC分类号： H01L33/06 ,  H01L33/30 ,  H01L33/60

CPC分类号： H01L21/0237 ,  H01L21/02439 ,  H01L21/02505 ,  H01L21/0254 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/44

摘要： One embodiment of the present invention provides a method for fabricating an InGaAlN light-emitting semiconductor structure. During the fabrication process, at least one single-crystal sacrificial layer is deposited on the surface of a base substrate to form a combined substrate, wherein the single-crystal sacrificial layer is lattice-matched with InGaAlN, and wherein the single crystal layer forms a sacrificial layer. Next, the InGaAlN light-emitting semiconductor structure is fabricated on the combined substrate. The InGaAlN structure fabricated on the combined substrate is then transferred to a support substrate, thereby facilitating a vertical electrode configuration. Transferring the InGaAlN structure involves etching the single-crystal sacrificial layer with a chemical etchant. Furthermore, the InGaAlN and the base substrate are resistant to the chemical etchant. The base substrate can be reused after the InGaAlN structure is transferred.

摘要翻译： 本发明的一个实施例提供一种制造InGaAlN发光半导体结构的方法。 在制造过程中，至少一个单晶牺牲层沉积在基底表面上以形成组合衬底，其中单晶牺牲层与InGaAlN晶格匹配，其中单晶层形成 牺牲层。 接下来，在组合衬底上制造InGaAlN发光半导体结构。 然后将在组合衬底上制造的InGaAlN结构转移到支撑衬底，从而有助于垂直电极构型。 转移InGaAlN结构包括用化学蚀刻剂蚀刻单晶牺牲层。 此外，InGaAlN和基底对化学蚀刻剂具有耐受性。 在传输InGaAlN结构后，可以重新使用基底。

公开(公告)号：US20110113839A1

公开(公告)日：2011-05-19

申请号：US12591281

申请日：2009-11-16

申请人： Sung-Ming Wang ,  Mei-Li Wang

发明人： Sung-Ming Wang ,  Mei-Li Wang

IPC分类号： E05B17/00

CPC分类号： E05B37/16 ,  E05B13/002 ,  Y10T70/5788 ,  Y10T70/7164 ,  Y10T70/722 ,  Y10T70/739 ,  Y10T70/7407

摘要： A code lock is revealed. The code lock includes a housing, a return base, a plurality of locking seats, a fixed seat, a moveable seat, a code seat, a plurality of code members and a housing base arranged sequentially from top to bottom. A press button corresponding to each locking seat is disposed on the housing and each locking seat has at least one tooth that locks with a hook of the return base when the press button is pressed to push the locking seat. A stopping block is arranged at the bottom of each locking seat while the code member is set with a code post correspondingly. Moreover, the moveable seat includes a code area and a non-code area for mounting the code member and the code seat has a plurality of C-shaped holes corresponding to the code members. Thereby a simple-structured and easy-operated code lock is formed.

摘要翻译： 显示代码锁。 代码锁包括从顶部到底部依次布置的壳体，返回座，多个锁定座，固定座，可移动座，代码座，多个代码构件和壳体基座。 与每个锁定座相对应的按钮设置在壳体上，并且每个锁定座具有至少一个齿，当按下按钮以推动锁定座时，至少一个齿与返回座的钩锁定。 在每个锁定座的底部布置有止动块，同时代码构件相应地设置有代码柱。 此外，可移动座椅包括用于安装代码构件的代码区域和非代码区域，并且代码座具有与代码构件对应的多个C形孔。 因此，形成简单结构且容易操作的代码锁。

公开(公告)号：US20110105921A1

公开(公告)日：2011-05-05

申请号：US12609700

申请日：2009-10-30

申请人： Li Wang

发明人： Li Wang

IPC分类号： A61B5/02

CPC分类号： A61B5/024 ,  A61B5/0245 ,  A61B5/0452 ,  A61B5/7285 ,  A61N1/3627 ,  A61N1/3702 ,  A61N1/37258

摘要： Aspects of this disclosure describe measuring intervals within a cardiac cycle to, for example, determine whether a patient is a candidate for cardiac therapy initiation or modification. The intervals may be measured in response to a trigger identifying a physiological event. The intervals and an identification of the physiological event may be stored. A physician or clinician may determine whether the patient is a candidate for cardiac therapy modification based on the measured intervals.

摘要翻译： 本公开的方面描述了心脏周期内的测量间隔，以例如确定患者是否是心脏治疗开始或修改的候选者。 可以响应于识别生理事件的触发来测量间隔。 可以存储生理事件的间隔和识别。 医生或临床医生可以基于测量的间隔来确定患者是否是心脏修复的候选者。

公开(公告)号：US07902556B2

公开(公告)日：2011-03-08

申请号：US12067690

申请日：2006-11-17

申请人： Fengyi Jiang ,  Bilin Shao ,  Li Wang ,  Wenqing Fang

发明人： Fengyi Jiang ,  Bilin Shao ,  Li Wang ,  Wenqing Fang

IPC分类号： H01L33/00

CPC分类号： H01L33/0066 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02565 ,  H01L33/0087 ,  H01L33/12

摘要： One embodiment of the present invention provides a semiconductor light-emitting device which includes: (1) a silicon (Si) substrate; (2) a silver (Ag) transition layer which is formed on a surface of the Si substrate, wherein the Ag transition layer covers the Si substrate surface; and (3) an InGaAlN, ZnMgCdO, or ZnBeCdO-based semiconductor light-emitting structure which is fabricated on the Ag-coated Si substrate. Note that the Ag transition layer prevents the Si substrate surface from forming an amorphous overcoat with reactant gases used for growing the semiconductor light-emitting structure.

摘要翻译： 本发明的一个实施例提供一种半导体发光器件，其包括：（1）硅（Si）衬底; （2）形成在Si衬底的表面上的银（Ag）过渡层，其中Ag过渡层覆盖Si衬底表面; 和（3）在Ag涂覆的Si衬底上制造的InGaAlN，ZnMgCdO或ZnBeCdO基半导体发光结构。 注意，Ag过渡层防止Si衬底表面与用于生长半导体发光结构的反应气体形成无定形外涂层。

公开(公告)号：US07893795B2

公开(公告)日：2011-02-22

申请号：US12147494

申请日：2008-06-27

申请人： Min-Wei Lee ,  Chin-Li Wang

发明人： Min-Wei Lee ,  Chin-Li Wang

IPC分类号： H03H7/01 ,  H01P7/08 ,  H01P1/203

CPC分类号： H03H7/0115 ,  H03H7/1766 ,  H03H2001/0064 ,  H03H2001/0078

摘要： A circuit device having an inductor and a capacitor in parallel connection includes a planar inductor embedded in an insulating material layer, wherein the planar inductor has a winding wire portion, a first connection terminal and a second connection terminal. The first connection terminal and the second connection terminal are located at different elevations and have an overlapping region. A capacitor dielectric layer is located within the overlapping region between the first connection terminal and the second connection terminal, and the capacitor dielectric layer and the first connection terminal and the second connection terminal together form a capacitor.

摘要翻译： 具有并联的电感器和电容器的电路装置包括嵌入在绝缘材料层中的平面电感器，其中所述平面电感器具有绕组线部分，第一连接端子和第二连接端子。 第一连接端子和第二连接端子位于不同的高度并且具有重叠区域。 电容器介电层位于第一连接端子和第二连接端子之间的重叠区域内，并且电容器电介质层和第一连接端子和第二连接端子一起形成电容器。

公开(公告)号：US20110033417A1

公开(公告)日：2011-02-10

申请号：US12675897

申请日：2008-08-27

申请人： Gopinadhan N. Anilkumar ,  Frank Bennett ,  Tin-Yau Chan ,  Kevin X. Chen ,  Mousumi Sannigrahi ,  Francisco Velazquez ,  Srikanth Venkatraman ,  Qingbei Zeng ,  Jose S. Duca ,  Charles A. Lesburg ,  Joseph A. Kozlowski ,  F. George Njoroge ,  Stuart B. Rosenblum ,  Neng-Yang Shih ,  Stephen J. Gavalas ,  Yueheng Jiang ,  Patrick A. Pinto ,  Haiyan Pu ,  Oleg B. Selyutin ,  Bancha Vibulbhan ,  Li Wang ,  Wanli Wu ,  Weiying Yang ,  Yuhua Huang ,  Hsueh-Cheng Huang ,  Robert Palermo ,  Boris Feld

发明人： Gopinadhan N. Anilkumar ,  Frank Bennett ,  Tin-Yau Chan ,  Kevin X. Chen ,  Mousumi Sannigrahi ,  Francisco Velazquez ,  Srikanth Venkatraman ,  Qingbei Zeng ,  Jose S. Duca ,  Charles A. Lesburg ,  Joseph A. Kozlowski ,  F. George Njoroge ,  Stuart B. Rosenblum ,  Neng-Yang Shih ,  Stephen J. Gavalas ,  Yueheng Jiang ,  Patrick A. Pinto ,  Haiyan Pu ,  Oleg B. Selyutin ,  Bancha Vibulbhan ,  Li Wang ,  Wanli Wu ,  Weiying Yang ,  Yuhua Huang ,  Hsueh-Cheng Huang ,  Robert Palermo ,  Boris Feld

IPC分类号： A61K38/21 ,  C07D401/04 ,  C07D413/14 ,  C07D209/42 ,  C07D401/14 ,  C07D417/14 ,  C07D407/14 ,  C07D409/14 ,  A61K31/4439 ,  A61K31/444 ,  A61K31/404 ,  A61K31/4545 ,  A61K31/513 ,  A61K31/443 ,  A61K31/4709 ,  A61K31/4436 ,  A61K31/5377 ,  A61K31/538 ,  A61K31/5415 ,  A61K31/7088 ,  A61K31/7052 ,  A61K39/12 ,  A61K39/42 ,  A61P31/12 ,  A61P31/14

CPC分类号： C07D417/14 ,  C07D209/42 ,  C07D401/04 ,  C07D401/14 ,  C07D403/04 ,  C07D405/14 ,  C07D409/14 ,  C07D413/14

摘要： The present invention relates to 2,3-Substituted Indole Derivatives, compositions comprising at least one 2,3-Substituted Indole Derivative, and methods of using the 2,3-Substituted Indole Derivatives for treating or preventing a viral infection or a virus-related disorder in a patient.

摘要翻译： 本发明涉及2,3-取代的吲哚衍生物，包含至少一种2,3-取代的吲哚衍生物的组合物和使用2,3-取代的吲哚衍生物用于治疗或预防病毒感染或病毒相关的方法 病人无序。

公开(公告)号：US20110001120A1

公开(公告)日：2011-01-06

申请号：US12093508

申请日：2008-03-25

申请人： Fengyi Jiang ,  Junlin Liu ,  Li Wang

发明人： Fengyi Jiang ,  Junlin Liu ,  Li Wang

IPC分类号： H01L33/04 ,  H01L21/18

CPC分类号： H01L33/44 ,  H01L21/6835 ,  H01L33/0079 ,  H01L33/405 ,  H01L2221/6835 ,  H01L2221/68359

摘要： A light-emitting device includes a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped layer, and a multi-quantum-well (MQW) active layer situated between the first and the second doped layers. The device also includes a first electrode coupled to the first doped layer and a first passivation layer situated between the first electrode and the first doped layer in areas other than an ohmic-contact area. The first passivation layer substantially insulates the first electrode from edges of the first doped layer, thereby reducing surface recombination. The device further includes a second electrode coupled to the second doped layer and a second passivation layer which substantially covers the sidewalls of the first and second doped layers, the MQW active layer, and the horizontal surface of the second doped layer.

摘要翻译： 发光器件包括衬底，位于衬底上方的第一掺杂半导体层，位于第一掺杂层上方的第二掺杂半导体层以及位于第一和第二掺杂层之间的多量子阱（MQW）有源层 掺杂层。 该器件还包括耦合到第一掺杂层的第一电极和位于第一电极和第一掺杂层之间的除欧姆接触区域之外的区域中的第一钝化层。 第一钝化层使第一电极与第一掺杂层的边缘基本绝缘，从而减少表面复合。 该器件还包括耦合到第二掺杂层的第二电极和基本上覆盖第一和第二掺杂层，MQW有源层和第二掺杂层的水平表面的侧壁的第二钝化层。

公开(公告)号：US07848807B2

公开(公告)日：2010-12-07

申请号：US11323314

申请日：2005-12-30

申请人： Li Wang

发明人： Li Wang

IPC分类号： A61N1/362

CPC分类号： A61N1/3756 ,  A61B5/0452 ,  A61B5/0472 ,  A61N1/362 ,  A61N1/3627 ,  A61N1/365 ,  A61N1/3682 ,  A61N1/3684

摘要： Embodiments of close loop optimization of atrio-ventricular (A-V) delay interval and/or inter-ventricular (V-V) timing are disclosed. An implantable medical device includes a housing that supports a processing means adapted for implantation in a patient. There can be two or more electrodes electrically coupled to the processing means where the two or more electrodes can be used for sensing a patient's cardiac signals, which include a far-field EGM. The processing means can determine a width of a P-wave from the sensed far-field EGM. Also included can be a means for delivering an adapted cardiac pacing therapy based upon the width of the P-wave, including revised A-V delay and/or V-V temporal intervals.

摘要翻译： 公开了房室（A-V）延迟间隔和/或心室间（V-V）定时的闭环优化的实施例。 可植入医疗装置包括支撑适于植入患者体内的处理装置的外壳。 可以有两个或更多个电极耦合到处理装置的电极，其中两个或更多个电极可用于感测患者的心脏信号，其包括远场EGM。 处理装置可以从感测的远场EGM确定P波的宽度。 还包括可以用于基于P波的宽度（包括修正的A-V延迟和/或V-V时间间隔）递送适应的心脏起搏治疗的手段。

公开(公告)号：US07826896B2

公开(公告)日：2010-11-02

申请号：US11555918

申请日：2006-11-02

申请人： Li Wang

发明人： Li Wang

IPC分类号： A61B5/05

CPC分类号： A61N1/36521 ,  A61B5/053 ,  A61B5/0809 ,  A61B5/7285

摘要： Method and apparatus for monitoring a plurality of physiological factors contributing to physiological conditions of a heart, that determines a first impedance, corresponding to the plurality of physiological factors, across a plurality of vectors, and a second impedance, corresponding to the plurality of physiological factors, across the plurality of vectors subsequent to determining the first impedance. A relative change in impedance corresponding to the plurality of vectors is determined in response to the first impedance and the second impedance, first minimally contributing physiological factors of the plurality of physiological factors associated with a first physiological factor of the plurality of physiological factors are determined, and relative change in tissue resistivity corresponding to the first physiological factor in response to physiological factors of the plurality of physiological factors other than the first minimal contributing physiological factors and the relative change in impedance are determined.

摘要翻译： 用于监测有助于心脏生理状态的多个生理因子的方法和装置，其确定对应于多个向量的多个生理因素的第一阻抗和对应于多个生理因子的第二阻抗 在确定第一阻抗之后跨越多个向量。 响应于第一阻抗和第二阻抗确定与多个向量相对应的阻抗的相对变化，确定与多个生理因子中的第一生理因子相关联的多个生理因子的第一最小贡献的生理因子， 并且确定响应于除了第一最小贡献生理因子之外的多个生理因素的生理因素和阻抗的相对变化的对应于第一生理因子的组织电阻率的相对变化。

公开(公告)号：US20100219394A1

公开(公告)日：2010-09-02

申请号：US12159835

申请日：2007-08-31

申请人： Fengyi Jiang ,  Li Wang ,  Wenqing Fang ,  Chunlan Mo

发明人： Fengyi Jiang ,  Li Wang ,  Wenqing Fang ,  Chunlan Mo

IPC分类号： H01L33/06 ,  H01L33/30

CPC分类号： H01L33/0095 ,  H01L33/32 ,  H01L33/40

摘要： One embodiment of the present invention provides a method for fabricating a group III-V nitride structure with an ohmic-contact layer. The method involves fabricating a group III-V nitride structure with a p-type layer. The method further involves depositing an ohmic-contact layer on the p-type layer without first annealing the p-type layer. The method also involves subsequently annealing the p-type layer and the ohmic-contact layer in an annealing chamber at a predetermined temperature for a predetermined period of time, thereby reducing the resistivity of the p-type layer and the ohmic contact in a single annealing process.

摘要翻译： 本发明的一个实施例提供了一种用欧姆接触层制造III-V族氮化物结构的方法。 该方法包括用p型层制造III-V族氮化物结构。 该方法还包括在p型层上沉积欧姆接触层，而不首先退火p型层。 该方法还包括随后在预定温度下在退火室中退火预定时间段内的p型层和欧姆接触层，从而降低单一退火中p型层的电阻率和欧姆接触 处理。