公开(公告)号：US20120223323A1

公开(公告)日：2012-09-06

申请号：US13214626

申请日：2011-08-22

Applicant: Tomonari SHIODA ,  Naoharu Sugiyama ,  Shinya Nunoue

Inventor： Tomonari SHIODA ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC: H01L29/205 ,  H01L21/20 ,  B82Y99/00 ,  B82Y40/00

CPC classification number: H01L29/205 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787 ,  H01L33/007 ,  H01L33/12

Abstract: According to one embodiment, a wafer includes a substrate, a base layer, a foundation layer, an intermediate layer and a functional unit. The substrate has a major surface. The base layer is provided on the major surface and includes a silicon compound. The foundation layer is provided on the base layer and includes GaN. The intermediate layer is provided on the foundation layer and includes a layer including AlN. The functional unit is provided on the intermediate layer and includes a nitride semiconductor. The foundation layer has a first region on a side of the base layer, and a second region on a side of the intermediate layer. A concentration of silicon atoms in the first region is higher than a concentration of silicon atoms in the second region. The foundation layer has a plurality of voids provided in the first region.

Abstract translation: 根据一个实施例，晶片包括基板，基底层，基础层，中间层和功能单元。 基板具有主表面。 基层设置在主表面上并且包括硅化合物。 基底层设置在基底层上并且包括GaN。 中间层设置在基础层上，并且包括包含AlN的层。 功能单元设置在中间层上并且包括氮化物半导体。 基底层在基层的一侧具有第一区域，在中间层的一侧具有第二区域。 第一区域中硅原子的浓度高于第二区域中硅原子的浓度。 基础层具有设置在第一区域中的多个空隙。

公开(公告)号：US20120056526A1

公开(公告)日：2012-03-08

申请号：US13034120

申请日：2011-02-24

Applicant: Iwao MITSUISHI ,  Shinya Nunoue ,  Takahiro Sato ,  Yumi Fukuda ,  Aoi Okada ,  Naotoshi Matsuda ,  Toshiki Hikosaka

Inventor： Iwao MITSUISHI ,  Shinya Nunoue ,  Takahiro Sato ,  Yumi Fukuda ,  Aoi Okada ,  Naotoshi Matsuda ,  Toshiki Hikosaka

IPC: H01J1/62

CPC classification number: C09K11/7734 ,  C09K11/0883 ,  H01L33/502 ,  H01L33/504 ,  H01L33/505 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 380 nm to 470 nm; a CASN first red phosphor that is disposed on the light emitting element; a sialon second red phosphor that is disposed on the light emitting element; and a sialon green phosphor that is disposed on the light emitting element.

公开(公告)号：US20120056220A1

公开(公告)日：2012-03-08

申请号：US13226045

申请日：2011-09-06

Applicant: Taisuke SATO ,  Masanobu Ando ,  Hajime Nago ,  Koichi Tachibana ,  Toshiyuki Oka ,  Shinya Nunoue

Inventor： Taisuke SATO ,  Masanobu Ando ,  Hajime Nago ,  Koichi Tachibana ,  Toshiyuki Oka ,  Shinya Nunoue

IPC: H01L33/60

CPC classification number: H01L33/007 ,  H01L33/46

Abstract: According to one embodiment, in a light emitting device, a substrate is transparent to a wavelength of emitted light. A first dielectric layer is formed in a first region on the substrate, and has a refractive index smaller than a refractive index of the substrate. A second dielectric layer is formed in a second region on the substrate surrounding the first region, and has a refractive index larger than the refractive index of the substrate. A first semiconductor layer is formed on the first dielectric layer, the second dielectric layer and the substrate. A second semiconductor layer is formed on the first semiconductor layer, and includes an active layer having a PN junction.

Abstract translation: 根据一个实施例，在发光器件中，衬底对于发射波长的波长是透明的。 第一电介质层形成在基板上的第一区域中，并且折射率小于基板的折射率。 在包围第一区域的基板上的第二区域中形成第二电介质层，并且折射率大于基板的折射率。 在第一电介质层，第二电介质层和衬底上形成第一半导体层。 第二半导体层形成在第一半导体层上，并且包括具有PN结的有源层。

公开(公告)号：US20120056153A1

公开(公告)日：2012-03-08

申请号：US13035069

申请日：2011-02-25

Applicant: Shinji SAITO ,  Maki Sugai ,  Eiji Muramoto ,  Shinya Nunoue

Inventor： Shinji SAITO ,  Maki Sugai ,  Eiji Muramoto ,  Shinya Nunoue

IPC: H01L33/06 ,  H01L29/20

CPC classification number: H01L33/405 ,  B82Y20/00 ,  H01L33/32 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3063 ,  H01S5/34333

Abstract: A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a polycrystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less; and a metal layer formed on the oxide layer.

Abstract translation: 实施例的半导体器件包括：由p型氮化物半导体制成的半导体层; 形成在所述半导体层上的氧化物层，所述氧化物层由多晶氧化镍构成，所述氧化物层的厚度为3nm以下; 以及形成在氧化物层上的金属层。

公开(公告)号：US08130803B2

公开(公告)日：2012-03-06

申请号：US12299186

申请日：2008-09-04

Applicant: Jongil Hwang ,  Shinji Saito ,  Shinya Nunoue

Inventor： Jongil Hwang ,  Shinji Saito ,  Shinya Nunoue

IPC: H01S3/04 ,  G02B6/00 ,  H01L33/00

CPC classification number: H01S5/0228 ,  F21K9/61 ,  F21Y2115/10 ,  H01S5/005 ,  H01S5/22 ,  H01S5/4056

Abstract: A light emitting device includes: a semiconductor laser element having a first emission face for emitting laser light; a light guiding body buried in the concave portion of the supporting base, guiding the laser light emitted from the semiconductor laser element, and having an incident face to which the laser light enters, and a second emission face from which the laser light traveling through the light guiding body is emitted, the incident face of the light guiding body being such a curved face that an incident angle of the laser light is within a predetermined range including the Brewster angle in a plane formed by a traveling direction of the laser light and a short axis of a light emitting spot of the laser light; and a fluorescent substance scattered in the light guiding body, absorbing the laser light, and emitting the light having a different wavelength from a wavelength of the laser light.

Abstract translation: 一种发光器件包括：具有用于发射激光的第一发射面的半导体激光元件; 导光体，其被埋置在所述支撑基部的凹部中，引导从所述半导体激光元件发射的激光，并且具有入射面入射到所述入射面;以及第二射出面， 导光体发射，导光体的入射面为激光的入射角在由激光的行进方向形成的平面内的布鲁斯特角度的预定范围内的曲面， 激光发光点的短轴; 以及散射在导光体中的荧光体，吸收激光，并且发射具有与激光波长不同的波长的光。

公开(公告)号：US20120032209A1

公开(公告)日：2012-02-09

申请号：US13032934

申请日：2011-02-23

Applicant: Tomonari SHIODA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Koichi Tachibana ,  Shinya Nunoue

Inventor： Tomonari SHIODA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Koichi Tachibana ,  Shinya Nunoue

IPC: H01L33/32

CPC classification number: H01L33/06 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/04 ,  H01L33/32

Abstract: According to one embodiment, a semiconductor light emitting device includes: semiconductor layers; a multilayered structural body; and a light emitting portion. The multilayered structural body is provided between the semiconductor layers, and includes a first layer and a second layer including In. The light emitting portion is in contact with the multilayered structural body between the multilayered structural body and p-type semiconductor layer, and includes barrier layers and a well layer including In with an In composition ratio among group III elements higher than an In composition ratio among group III elements in the second layer. An average lattice constant of the multilayered structural body is larger than that of the n-type semiconductor layer. Difference between the average lattice constant of the multilayered structural body and that of the light emitting portion is less than difference between that of the multilayered structural body and that of the n-type semiconductor layer.

Abstract translation: 根据一个实施例，半导体发光器件包括：半导体层; 多层结构体; 和发光部分。 多层结构体设置在半导体层之间，并且包括第一层和包括In的第二层。 发光部分与多层结构体和p型半导体层之间的多层结构体接触，并且包括阻挡层和包括In的阱层，III族元素中的In组成比高于In组成比中的In组成比 第三组元素在第二层。 多层结构体的平均晶格常数大于n型半导体层的平均晶格常数。 多层结构体的平均晶格常数与发光部的平均晶格常数之差小于多层结构体与n型半导体层的平均晶格常数之差。

公开(公告)号：US20120012814A1

公开(公告)日：2012-01-19

申请号：US13035304

申请日：2011-02-25

Applicant: Yoshiyuki HARADA ,  Toshiki Hikosaka ,  Tomonari Shioda ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

Inventor： Yoshiyuki HARADA ,  Toshiki Hikosaka ,  Tomonari Shioda ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

IPC: H01L33/06 ,  H01L33/08

CPC classification number: H01L33/08 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/06

Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part provided therebetween. The light emitting part includes a plurality of light emitting layers. Each of the light emitting layers includes a well layer region and a non-well layer region which is juxtaposed with the well layer region in a plane perpendicular to a first direction from the n-type semiconductor layer towards the p-type semiconductor layer. Each of the well layer regions has a common An In composition ratio. Each of the well layer regions includes a portion having a width in a direction perpendicular to the first direction of 50 nanometers or more.

Abstract translation: 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和设置在其间的发光部分。 发光部分包括多个发光层。 每个发光层包括在垂直于从n型半导体层朝向p型半导体层的第一方向的平面中与阱层区域并置的阱层区域和非阱层区域。 每个阱层区域具有常见的An In组成比。 每个阱层区域包括在垂直于第一方向的方向上具有50纳米或更大的宽度的部分。

公开(公告)号：US08071995B2

公开(公告)日：2011-12-06

申请号：US12719484

申请日：2010-03-08

Applicant: Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

Inventor： Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

IPC: H01L33/00

CPC classification number: H01L33/504 ,  H01L33/507 ,  H01L33/508 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A light emitting device, includes: a light source to emit source light; a first wavelength conversion portion to absorb the source light and to emit first light having a wavelength different from a wavelength of the source light; a light transmitting portion provided at an opposite side of the first wavelength conversion portion from the light source and configured to transmit the source light and the first light; and a second wavelength conversion portion provided at an opposite side of the light transmitting portion from the first wavelength conversion portion and configured to absorb at least one of the source light and the first light to emit second light having a wavelength different from the wavelength of the source light and also different from a wavelength of the first light. Part of the source light is configured to be taken to an outside of the light emitting device without passing through at least one of the first wavelength conversion portion and the second wavelength conversion portion.

Abstract translation: 一种发光器件，包括：发光源的光源; 第一波长转换部分，用于吸收源光并发射具有不同于源光波长的波长的第一光; 光传输部分，设置在与光源相反的第一波长转换部分的相对侧并且被配置为透射源光和第一光; 以及第二波长转换部，其设置在所述透光部的与所述第一波长转换部的相反侧，并且被配置为吸收所述源光和所述第一光中的至少一个，以发射具有与所述第二波长的波长不同的波长的第二光 源光并且也不同于第一光的波长。 源光的一部分被配置为被带到发光器件的外部，而不通过第一波长转换部分和第二波长转换部分中的至少一个。

公开(公告)号：US20110220933A1

公开(公告)日：2011-09-15

申请号：US12874399

申请日：2010-09-02

Applicant: Toru GOTODA ,  Takahiro Sato ,  Toshiyuki Oka ,  Shinya Nunoue ,  Kotaro Zaima

Inventor： Toru GOTODA ,  Takahiro Sato ,  Toshiyuki Oka ,  Shinya Nunoue ,  Kotaro Zaima

IPC: H01L33/22 ,  H01L33/00

CPC classification number: H01L33/382 ,  H01L33/0079 ,  H01L33/20 ,  H01L2933/0091

Abstract: A semiconductor light emitting device has a light emitting element, and first and second electrodes. The light emitting element has a nitride-based III-V compound semiconductor on a substrate. The first and second electrodes are disposed on both sides of the light emitting element, respectively. The light emitting element has a light emitting layer, a first conductive type semiconductor layer, and a second conductive type semiconductor layer. The first conductive type semiconductor layer is disposed between the light emitting layer and the first electrode. The second conductive type semiconductor layer is disposed between the light emitting layer and the second electrode. One surface of the first conductive type semiconductor layer contacts the first electrode and is a light extraction surface which is roughly processed so as to have two or more kinds of oblique angles.

Abstract translation: 半导体发光器件具有发光元件，以及第一和第二电极。 发光元件在基板上具有基于氮化物的III-V族化合物半导体。 第一和第二电极分别设置在发光元件的两侧。 发光元件具有发光层，第一导电型半导体层和第二导电型半导体层。 第一导电型半导体层设置在发光层和第一电极之间。 第二导电型半导体层设置在发光层和第二电极之间。 第一导电类型半导体层的一个表面接触第一电极，并且是大致加工以具有两种或更多种倾斜角的光提取表面。

公开(公告)号：US20110216799A1

公开(公告)日：2011-09-08

申请号：US12874440

申请日：2010-09-02

Applicant: Rei Hashimoto ,  Maki Sugai ,  Jongil Hwang ,  Yasushi Hattori ,  Shinji Saito ,  Masaki Tohyama ,  Shinya Nunoue

Inventor： Rei Hashimoto ,  Maki Sugai ,  Jongil Hwang ,  Yasushi Hattori ,  Shinji Saito ,  Masaki Tohyama ,  Shinya Nunoue

IPC: H01S5/223 ,  H01S5/323

CPC classification number: H01S5/2231 ,  H01S5/02461

Abstract: According to one embodiment, a semiconductor laser device with high reliability and excellent heat dissipation is provided. The semiconductor laser device includes an active layer, a p-type semiconductor layer on the active layer, a pair of grooves formed by etching into the p-type semiconductor layer, a stripe sandwiched by the pair of grooves and having shape of ridge, and a pair of buried layers made of insulator to bury the grooves. The bottom surfaces of the grooves are shallower with an increase in distance from the stripe.

Abstract translation: 根据一个实施例，提供了具有高可靠性和优异散热的半导体激光器件。 半导体激光器件包括有源层，有源层上的p型半导体层，通过蚀刻到p型半导体层中形成的一对沟槽，被一对沟槽夹着的条纹并具有脊状，以及 一对由绝缘体制成的掩埋层，以埋置凹槽。 沟槽的底面随着条纹的距离增加而变浅。