公开(公告)号：US20060293191A1

公开(公告)日：2006-12-28

申请号：US11472462

申请日：2006-06-22

申请人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano

发明人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano

IPC分类号： H01L39/24

CPC分类号： H01L21/76829 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/7684

摘要： A semiconductor device fabricating method includes forming a thin film at a top surface of a substrate; polishing a back surface of said substrate; and after the polishing of the back surface, polishing said thin film as formed at the top surface of said substrate.

摘要翻译： 一种半导体器件制造方法，包括在衬底的顶表面上形成薄膜; 抛光所述衬底的背面; 并且在后表面的抛光之后，在所述基板的顶表面处形成所述薄膜。

公开(公告)号：US07138073B2

公开(公告)日：2006-11-21

申请号：US10762514

申请日：2004-01-23

申请人： Gaku Minamihaba ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Hiroyuki Yano

IPC分类号： H01L21/302

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C23F3/00

摘要： A method of manufacturing a semiconductor device using a polishing slurry for CMP of Cu, which includes a first complexing agent containing a heterocyclic compound which is capable of forming a water-insoluble complex with Cu, and a second complexing agent containing a heterocyclic compound which is capable of forming a slightly water-soluble or water-soluble complex with Cu to thereby provide at least one extra ligand subsequent to formation of the complex.

摘要翻译： 使用Cu的CMP研磨用浆料的半导体装置的制造方法，其包括含有能够与Cu形成水不溶性络合物的杂环化合物的第一配位剂和含有杂环化合物的第二络合剂，所述杂环化合物为 能够与Cu形成轻微的水溶性或水溶性络合物，从而在形成络合物后提供至少一种额外的配体。

公开(公告)号：US06653267B2

公开(公告)日：2003-11-25

申请号：US09893961

申请日：2001-06-29

申请人： Hiroyuki Yano ,  Gaku Minamihaba ,  Masayuki Motonari ,  Masayuki Hattori ,  Nobuo Kawahashi

发明人： Hiroyuki Yano ,  Gaku Minamihaba ,  Masayuki Motonari ,  Masayuki Hattori ,  Nobuo Kawahashi

IPC分类号： C11D328

CPC分类号： C09G1/02 ,  C09K3/1463 ,  C23F3/04 ,  H01L21/3212

摘要： The present invention provides an aqueous dispersion for chemical mechanical polishing suitable for polishing of copper, which has a high polishing speed and a low erosion rate with overpolishing. The aqueous dispersion for chemical mechanical polishing of the invention contains a compound having a heterocycle, a surfactant and an oxidizing agent, wherein the compound having a heterocycle and the surfactant are in a weight ratio of 1:10 to 1:0.03. The aqueous dispersion may also contain abrasive particle. The compound having a heterocycle is preferably quinaldic acid, benzotriazole or the like. The surfactant is preferably a sulfonic acid salt such as potassium dodecylbenzenesulfonate or ammonium dodecylbenzenesulfonate, and the oxidizing agent is preferably ammonium persulfate, hydrogen peroxide or the like. The abrasive particle used may be inorganic particle such as colloidal silica, an organic particle such as polymer particle, or an organic/inorganic composite particle comprising a combination thereof.

公开(公告)号：US06611060B1

公开(公告)日：2003-08-26

申请号：US09677743

申请日：2000-10-03

申请人： Hiroshi Toyoda ,  Hiroyuki Yano ,  Gaku Minamihaba ,  Dai Fukushima ,  Tetsuo Matsuda ,  Hisashi Kaneko

发明人： Hiroshi Toyoda ,  Hiroyuki Yano ,  Gaku Minamihaba ,  Dai Fukushima ,  Tetsuo Matsuda ,  Hisashi Kaneko

IPC分类号： H01L2352

CPC分类号： H01L21/76846 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76819 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76849 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a cap film comprises a first polishing step of performing a polishing operation at selectivity of R1 (=removal rate for the cap film/removal rate for the insulating film), and a second polishing step of performing a polishing operation at selectivity of R2 (=removal rate for the cap film/removal rate for the insulating film). Each of the polishing operations is performed by using a slurry having the condition of R1>R2. By performing the polishing operations at different selectivity, the cap film free from problems such as dishing of the cap film and the residual cap film on side walls of a recess is formed. Consequently, a semiconductor device having an excellent RC characteristic can be provided.

摘要翻译： 形成盖膜的方法包括以R1的选择性（=绝缘膜的除去速率/绝缘膜的去除速率）进行抛光操作的第一抛光步骤，以及以选择性进行抛光操作的第二抛光步骤 的R2（=盖膜的去除率/绝缘膜的去除率）。 通过使用条件为R1> R2的浆料进行每次研磨操作。 通过以不同的选择性进行抛光操作，形成了帽膜没有诸如凹陷的盖膜和残留帽膜之间的问题。 因此，可以提供具有优异RC特性的半导体器件。

公开(公告)号：US07419910B2

公开(公告)日：2008-09-02

申请号：US10932096

申请日：2004-09-02

申请人： Gaku Minamihaba ,  Dai Fukushima ,  Susumu Yamamoto ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Dai Fukushima ,  Susumu Yamamoto ,  Hiroyuki Yano

IPC分类号： H01L21/302

CPC分类号： C09K3/1463 ,  C09G1/02 ,  C23F3/06 ,  H01L21/3212 ,  H01L21/7684

摘要： Disclosed is a CMP slurry comprising a Cu oxidizing agent, a complexing agent for forming a Cu organic complex, a surfactant, an inorganic particle, and a resin particle containing polystyrene, having on the surface thereof a functional group of the same kind of polarity as that of the inorganic particle and having an average particle diameter of less than 100 nm, the resin particle being incorporated at a concentration of less than 1% by weight.

摘要翻译： 公开了一种CMP浆料，其包含Cu氧化剂，用于形成Cu有机络合物的络合剂，表面活性剂，无机颗粒和含有聚苯乙烯的树脂颗粒，其表面上具有相同极性的官能团 无机粒子的平均粒径小于100nm的树脂粒子的浓度小于1重量％。

公开(公告)号：US07364667B2

公开(公告)日：2008-04-29

申请号：US10155015

申请日：2002-05-28

申请人： Gaku Minamihaba ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Hiroyuki Yano

IPC分类号： C09K13/00

CPC分类号： C09K3/1463 ,  C09G1/02 ,  C23F3/00 ,  H01L21/3212

摘要： A CMP slurry comprising polishing abrasives containing mixture abrasives of silica and alumina is used. In CMP using the slurry comprising mixture abrasives of silica and alumina as polishing abrasives, a down force-dependency of a polishing rate is high and an increase in dishing can be effectively suppressed.

摘要翻译： 使用包含抛光研磨剂的CMP浆料，其含有二氧化硅和氧化铝的混合物研磨剂。 在使用包含二氧化硅和氧化铝的混合物研磨剂的浆料作为抛光磨料的CMP中，抛光速率的下降力依赖性高，并且可以有效地抑制凹陷的增加。

公开(公告)号：US20070093064A1

公开(公告)日：2007-04-26

申请号：US11540707

申请日：2006-10-02

申请人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Susumu Yamamoto

发明人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Susumu Yamamoto

IPC分类号： C03C15/00 ,  H01L21/461 ,  H01L21/302 ,  B44C1/22

CPC分类号： H01L21/3212 ,  B24B37/015 ,  B24B49/16 ,  B24B57/02 ,  C09G1/02

摘要： A method for polishing a Cu film comprises contacting a Cu film formed above a semiconductor substrate with a polishing pad attached to a turntable, and supplying a first chemical liquid which promotes the polishing of the Cu film and a second chemical liquid which contains a surfactant, to the polishing pad while the turntable being rotated, thereby polishing the Cu film, while monitoring at least one of a table current of the turntable and a surface temperature of the polishing pad to detect a change in at least one of the table current of the turntable and the surface temperature of the polishing pad. The supply of the second chemical liquid is controlled in conformity with the change.

摘要翻译： 一种用于抛光Cu膜的方法包括使形成在半导体衬底上的Cu膜与附着在转盘上的抛光垫接触，并提供促进Cu膜抛光的第一种化学液体和含有表面活性剂的第二种化学液体， 在转盘旋转的同时向抛光垫移动，由此抛光Cu膜，同时监测转台的工作台电流和抛光垫的表面温度中的至少一个，以检测抛光垫的表电流中的至少一个的变化 转盘和抛光垫的表面温度。 根据变化来控制第二化学液体的供给。

公开(公告)号：US20050116348A1

公开(公告)日：2005-06-02

申请号：US11022644

申请日：2004-12-28

申请人： Gaku Minamihaba ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48 ,  H01L21/4763

CPC分类号： H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device comprises a semiconductor substrate, an interlayer insulating film including a first insulating film formed above the substrate and having a relative dielectric constant smaller than 2.5 and a second insulating film formed to cover the first insulating film and having a relative dielectric constant larger than that of the first insulating film, and a buried wiring formed within the interlayer insulating film. A bottom portion of the second insulating film is buried in the first insulating film at a number of points.

摘要翻译： 一种半导体器件，包括半导体衬底，层间绝缘膜，该层间绝缘膜包括形成在衬底上方的相对介电常数小于2.5的第一绝缘膜和形成为覆盖第一绝缘膜并且具有大于 第一绝缘膜，以及形成在层间绝缘膜内的掩埋布线。 第二绝缘膜的底部以多个点埋在第一绝缘膜中。

公开(公告)号：US06896590B2

公开(公告)日：2005-05-24

申请号：US10197602

申请日：2002-07-18

申请人： Gaku Minamihaba ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Hiroyuki Yano

IPC分类号： B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/321 ,  B24B1/00

CPC分类号： H01L21/3212 ,  C09G1/02

摘要： Disclosed is a CMP slurry, comprising a dispersion containing first particles having a primary particle diameter falling within a range of 5 nm to 50 nm and second particles having a primary particle diameter falling within a range of 50 nm to 100 nm, the concentration of the first particles in the dispersion falling within a range of 0.5 to 5% by weight, and the concentration of the second particles in the dispersion falling within a range of 0.01 to 0.1% by weight.

摘要翻译： 公开了一种CMP浆料，其包含含有一次粒径在5nm〜50nm范围内的第一粒子和一次粒径在50nm〜100nm的范围内的第二粒子的分散液， 分散体中的第一粒子在0.5〜5重量％的范围内，分散体中的第二粒子的浓度在0.01〜0.1重量％的范围内。

公开(公告)号：US06794286B2

公开(公告)日：2004-09-21

申请号：US09558053

申请日：2000-04-26

申请人： Hisako Aoyama ,  Kyoichi Suguro ,  Hiromi Niiyama ,  Hitoshi Tamura ,  Hisataka Hayashi ,  Tomonori Aoyama ,  Gaku Minamihaba ,  Tadashi Iijima

发明人： Hisako Aoyama ,  Kyoichi Suguro ,  Hiromi Niiyama ,  Hitoshi Tamura ,  Hisataka Hayashi ,  Tomonori Aoyama ,  Gaku Minamihaba ,  Tadashi Iijima

IPC分类号： H01L214763

CPC分类号： H01L21/76834 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76867 ,  H01L21/76877 ,  H01L21/76885 ,  H01L21/76897 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53242 ,  H01L23/53247 ,  H01L23/53252 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1036 ,  H01L2924/0002 ,  Y10S257/915 ,  H01L2924/00

摘要： A semiconductor device comprises a semiconductor substrate in which a semiconductor element is formed, an interlayer insulating film formed on the semiconductor substrate, an insulating barrier layer, formed on the interlayer insulating film by plasma nitriding, for preventing diffusion of a metal constituting a wiring layer, a conductive barrier layer, formed on the insulating barrier layer, for preventing diffusion of the metal, and a wiring layer formed of the metal on the conductive barrier layer. A bottom portion of the wiring layer is protected by the conductive barrier layer and the insulating barrier layer. Therefore, the diffusion of the metal constituting the wiring layer can be surely prevented.

摘要翻译： 半导体器件包括其中形成半导体元件的半导体衬底，形成在半导体衬底上的层间绝缘膜，通过等离子体氮化形成在层间绝缘膜上的绝缘阻挡层，用于防止构成布线层的金属的扩散 形成在绝缘阻挡层上的用于防止金属扩散的导电阻挡层，以及由金属形成的布线层在导电阻挡层上。 布线层的底部由导电阻挡层和绝缘阻挡层保护。 因此，可以可靠地防止构成布线层的金属的扩散。