Method of manufacturing semiconductor device
    83.
    发明申请
    Method of manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号:US20060068600A1

    公开(公告)日:2006-03-30

    申请号:US11181908

    申请日:2005-07-15

    IPC分类号: H01L21/31 H01L21/469

    摘要: A method of manufacturing a semiconductor device according to an aspect of the present invention comprises forming a plated film on a substrate which has a recessed portion on its surface so as to bury in the recessed portion by a plating method; forming over the plated film a compressive stress-applying film which is composed of a material having a thermal expansion coefficient of 60% or less compared with a thermal expansion coefficient of a metal composing the plated film; heat-treating while applying a compressive stress to the plated film by the compressive stress-applying film; and removing the compressive stress-applying film and the plated film which is not buried in the recessed portion.

    摘要翻译: 根据本发明的一个方面的制造半导体器件的方法包括在其表面上具有凹陷部分的基板上形成镀膜,以便通过电镀方式将凹陷部分埋入其中; 在电镀膜上形成压缩应力施加膜,该压应力膜由与构成镀膜的金属的热膨胀系数相比具有60%以下的热膨胀系数的材料构成; 通过压应力施加膜向镀膜施加压应力时的热处理; 并且除去未埋设在凹部中的压应力施加膜和镀膜。

    Method of making multi-level wiring in a semiconductor device
    88.
    发明授权
    Method of making multi-level wiring in a semiconductor device 有权
    在半导体器件中制造多层布线的方法

    公开(公告)号:US06579785B2

    公开(公告)日:2003-06-17

    申请号:US09767724

    申请日:2001-01-24

    IPC分类号: H01L2144

    摘要: A method of manufacturing a semiconductor device, which comprises the steps of forming an intermediate layer on an insulating layer, forming a groove in the intermediate layer and the insulating layer, forming a first barrier layer on the intermediate layer, depositing a wiring layer on the first barrier layer to thereby fill the groove with the wiring layer, performing a flattening treatment of the wiring layer, removing a surface portion of the wiring to thereby permit the surface of the wiring to be recessed lower than a surface of the insulating layer, thus forming a recessed portion, forming a second barrier layer on the intermediate layer and on an inner wall of the recessed portion, performing a flattening treatment of the second barrier layer, thereby, and selectively removing the intermediate layer, exposing the insulating layer.

    摘要翻译: 一种制造半导体器件的方法,包括以下步骤:在绝缘层上形成中间层,在中间层中形成沟槽和绝缘层,在中间层上形成第一阻挡层,在其上沉积布线层 第一阻挡层,从而使布线层填充沟槽,对布线层进行平坦化处理,去除布线的表面部分,从而允许布线的表面比绝缘层的表面凹陷,因此 形成凹部,在所述中间层和所述凹部的内壁上形成第二阻挡层,对所述第二阻挡层进行平坦化处理,从而选择性地除去所述中间层,使所述绝缘层露出。

    Linear motor and method of producing the same

    公开(公告)号:US06548920B2

    公开(公告)日:2003-04-15

    申请号:US09796618

    申请日:2001-03-02

    IPC分类号: H02K4103

    CPC分类号: H02K41/031

    摘要: A linear motor and a method of producing the linear motor are provided to reduce a leak magnetic flux flowing between an armature and a moving element to reduce a one-direction magnetic attraction force generated between the armature and the moving element. The linear motor includes the armature having a core formed of a magnetic body and a winding wound around the core, and the moving element supported so as for the moving element to move relatively to the armature via a gap, magnetic pole teeth disposed above and below the moving element, disposed at predetermined pitches along a moving direction of the moving element and disposed opposite to each other via the moving element, and a winding for exciting the magnetic pole teeth such that adjacent and opposite magnetic pole teeth have different magnetic poles, and the moving element is reciprocated relatively to the armature by exciting the winding according to a predetermined control circuit.