公开(公告)号：US07148542B2

公开(公告)日：2006-12-12

申请号：US10805327

申请日：2004-03-22

申请人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang

发明人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang

IPC分类号： H01L27/01

CPC分类号： H01L27/1274 ,  G02F1/13454 ,  G02F2001/136245 ,  H01L21/8213 ,  H01L29/02 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78687 ,  H01L29/78696

摘要： An insulated gate semiconductor device comprising an insulator substrate having provided thereon a source and a drain region; a channel region being incorporated between said source and said drain regions, said channel region comprising a polycrystalline, a single crystal, or a semi-amorphous semiconductor material; and a region provided under said channel region, said region comprising an amorphous material containing the same material as that of the channel region as the principal component, or said region comprising a material having a band gap larger than said channel region.A process for fabricating the device is also disclosed.

摘要翻译： 一种绝缘栅极半导体器件，包括其上设置有源极和漏极区域的绝缘体衬底; 沟道区域并入所述源极和所述漏极区域之间，所述沟道区域包括多晶，单晶或半非晶半导体材料; 以及设置在所述沟道区下面的区域，所述区域包含含有与作为主要成分的沟道区相同的材料的非晶材料，或者所述区域包括具有比所述沟道区大的带隙的材料。 还公开了一种用于制造该器件的工艺。

公开(公告)号：US07109108B2

公开(公告)日：2006-09-19

申请号：US10938500

申请日：2004-09-13

申请人： Yasuhiko Takemura ,  Hongyong Zhang ,  Satoshi Teramoto

发明人： Yasuhiko Takemura ,  Hongyong Zhang ,  Satoshi Teramoto

IPC分类号： H01L21/4763

CPC分类号： H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78696 ,  Y10S257/90

摘要： A thin film transistor device reduced substantially in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidizing the gate contact, covering an exposed surface of the silicon semiconductor with a metal, and irradiating an intense light such as a laser beam to the metal film either from the upper side or from an insulator substrate side to allow the metal coating to react with silicon to obtain a silicide film. The metal silicide layer may be obtained otherwise by tightly adhering a metal coating to the exposed source and drain regions using an insulator formed into an approximately triangular shape, preferably 1 μm or less in width, and allowing the metal to react with silicon.A high performance TFT can be realized. The metal silicide layer achieves favorable contact with the source and the drain, and, since it has a lower resistivity than silicon, the parasitic resistance between the source and drain regions can be considerably lowered.

摘要翻译： 薄膜晶体管器件通过并入硅化物膜而在源极和漏极之间的电阻基本上减小，该硅化物膜通过包括在硅衬底上形成栅极绝缘膜和栅极接触的方法制造，阳极氧化栅极接触，覆盖 用金属暴露硅半导体的表面，并从激光束的上侧或从绝缘体基板侧向金属膜照射激光等强光，使金属被膜与硅反应，得到硅化物膜。 金属硅化物层可以通过使用形成为大致三角形形状的绝缘体（优选为1μm以下）的宽度紧密地将金属涂层紧密地粘附到暴露的源极和漏极区域，并且允许金属与硅反应来获得。 可以实现高性能TFT。 金属硅化物层实现与源极和漏极的良好接触，并且由于其具有比硅更低的电阻率，所以源极和漏极区域之间的寄生电阻可以显着降低。

公开(公告)号：US06906383B1

公开(公告)日：2005-06-14

申请号：US09526486

申请日：2000-03-15

申请人： Hongyong Zhang ,  Yasuhiko Takemura ,  Toshimitsu Konuma ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi

发明人： Hongyong Zhang ,  Yasuhiko Takemura ,  Toshimitsu Konuma ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/10 ,  H01L29/786 ,  H01L31/20 ,  H01L27/01

CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： There is provided a method by which lightly doped drain (LDD) regions can be formed easily and at good yields in source/drain regions in thin film transistors possessing gate electrodes covered with an oxide covering. A lightly doped drain (LDD) region is formed by introducing an impurity into an island-shaped silicon film in a self-aligning manner, with a gate electrode serving as a mask. First, low-concentration impurity regions are formed in the island-shaped silicon film by using rotation-tilt ion implantation to effect ion doping from an oblique direction relative to the substrate. Low-concentration impurity regions are also formed below the gate electrode at this time. After that, an impurity at a high concentration is introduced normally to the substrate, so forming high-concentration impurity regions. In the above process, a low-concentration impurity region remains below the gate electrode and constitutes a lightly doped drain region.

公开(公告)号：US06867431B2

公开(公告)日：2005-03-15

申请号：US08307167

申请日：1994-09-16

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

IPC分类号： H01L21/311 ,  H01L21/316 ,  H01L21/321 ,  H01L21/336 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  H01L31/036 ,  H01L31/0368 ,  H01L31/0392

CPC分类号： H01L29/665 ,  H01L21/02145 ,  H01L21/02244 ,  H01L21/02258 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31683 ,  H01L21/31687 ,  H01L21/321 ,  H01L27/124 ,  H01L27/127 ,  H01L29/458 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.

公开(公告)号：US06803600B2

公开(公告)日：2004-10-12

申请号：US09983523

申请日：2001-10-24

申请人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang

发明人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Hongyong Zhang

IPC分类号： H01L2904

CPC分类号： H01L27/127 ,  G02F1/13454 ,  G02F2001/136245 ,  H01L21/76897 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78651 ,  H01L29/78666 ,  H01L29/78675

摘要： An LDD structure is manufactured to have a desired aspect ratio of the height to the width of a gate electrode. The gate electrode is first deposited on a semiconductor substrate followed by ion implantation with the gate electrode as a mask to form a pair of impurity regions. The gate electrode is then anodic oxidized to form an oxide film enclosing the electrode. With the oxide film as a mask, highly doped regions are formed by ion implantation in order to define lightly doped regions between the highly doped regions and the channel region located therebetween.

摘要翻译： 制造LDD结构以具有期望的高度与栅电极的宽度的纵横比。 首先将栅电极沉积在半导体衬底上，随后以栅电极作为掩模进行离子注入，以形成一对杂质区。 然后对栅电极进行阳极氧化，形成包围电极的氧化膜。 以氧化物膜为掩模，通过离子注入形成高度掺杂的区域，以便在高掺杂区域和位于它们之间的沟道区域之间限定轻掺杂区域。

公开(公告)号：US06723590B1

公开(公告)日：2004-04-20

申请号：US09615842

申请日：2000-07-13

申请人： Hongyong Zhang ,  Naoaki Yamaguchi ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Naoaki Yamaguchi ,  Yasuhiko Takemura

IPC分类号： H01L2100

CPC分类号： H01L27/1285 ,  G02F1/13454 ,  H01L27/1296

摘要： A linear laser light which has an energy and is to be scanned is irradiated to a semiconductor device formed on a substrate, and then the substrate is rotated to irradiate to the semiconductor device a linear laser light which has a higher energy than that of the irradiated linear laser light and is to be scanned. Also, in a semiconductor device having an analog circuit region and a remaining circuit region wherein the analog circuit region is smaller than the remaining circuit region, a linear laser light having an irradiation area is irradiated to the analog circuit region without moving the irradiation area so as not to overlap the laser lights by scanning. On the other hand, the linear laser light to be scanned is irradiated to the remaining circuit region.

摘要翻译： 将具有能量并被扫描的能量的线性激光照射到形成在基板上的半导体器件，然后旋转基板以向半导体器件照射具有比照射的能量更高的能量的线性激光 线性激光并被扫描。 此外，在具有模拟电路区域和模拟电路区域小于剩余电路区域的剩余电路区域的半导体器件中，具有照射区域的线性激光照射到模拟电路区域而不移动照射区域 因为不要通过扫描与激光重叠。 另一方面，要扫描的线性激光照射到剩余电路区域。

公开(公告)号：US06475837B2

公开(公告)日：2002-11-05

申请号：US09850886

申请日：2001-05-07

申请人： Hongyong Zhang ,  Naoaki Yamaguchi ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Naoaki Yamaguchi ,  Yasuhiko Takemura

IPC分类号： H01L2100

CPC分类号： G02F1/136286 ,  G02F1/136209 ,  G02F1/136213 ,  G02F1/136227 ,  G02F2201/121 ,  G02F2201/40

摘要： An auxiliary capacitor for a pixel of an active matrix type liquid crystal display is provided without decreasing the aperture ratio. A transparent conductive film for a common electrode is formed under a pixel electrode constituted by a transparent conductive film with an insulation film provided therebetween. Further, the transparent conductive film for the common electrode is maintained at fixed potential, formed so as to cover a gate bus line and a source bus line, and configured such that signals on each bus line are not applied to the pixel electrode. The pixel electrode is disposed so that all edges thereof overlap the gate bus line and source bus line. As a result, each of the bus lines serves as a black matrix. Further, the pixel electrode overlaps the transparent conductive film for the common electrode to form a storage capacitor.

摘要翻译： 提供一种用于有源矩阵型液晶显示器的像素的辅助电容器，而不会降低开口率。 用于公共电极的透明导电膜形成在由透明导电膜构成的像素电极之下，其间设置有绝缘膜。 此外，用于公共电极的透明导电膜保持固定电位，形成为覆盖栅极总线和源极总线，并且被配置为使得每个总线上的信号不被施加到像素电极。 像素电极被设置成使得其所有边缘与栅极总线和源极总线重叠。 结果，每条总线作为黑矩阵。 此外，像素电极与用于公共电极的透明导电膜重叠形成存储电容器。

公开(公告)号：US06423586B1

公开(公告)日：2002-07-23

申请号：US09038926

申请日：1998-03-09

申请人： Shunpei Yamazaki ,  Hongyong Zhang ,  Naoto Kusumoto ,  Yasuhiko Takemura

发明人： Shunpei Yamazaki ,  Hongyong Zhang ,  Naoto Kusumoto ,  Yasuhiko Takemura

IPC分类号： H01L21336

CPC分类号： H01L21/02667 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/02686 ,  H01L21/2026 ,  H01L31/208 ,  Y02E10/50 ,  Y02P70/521 ,  Y10T29/41

摘要： A semiconductor material and a method for forming the same, said semiconductor material having produced by a process comprising melting a noncrystal semiconductor film containing therein carbon, nitrogen, and oxygen each at a concentration of 5×1019 atoms·cm−3 or lower, preferably 1×1019 atoms·cm−3 or lower, by irradiating a laser beam or a high intensity light equivalent to a laser beam to said noncrystal semiconductor film, and then recrystallizing the thus molten amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, said semiconductor materials being useful for fabricating thin film semiconductor devices such as thin film transistors improved in device characteristics.

摘要翻译： 一种半导体材料及其形成方法，所述半导体材料通过以下方法制备，所述方法包括以5×10 19原子/ cm 3以下，优选1×1019原子的浓度熔化含有碳，氮和氧的非晶半导体膜 cm-3以下，通过将激光等离子体的激光或高强度光照射到所述非晶半导体膜，然后使这样熔融的非晶硅膜重结晶。 本发明提供具有优异的再现性的高迁移率的薄膜半导体，所述半导体材料可用于制造薄膜晶体管，例如改善器件特性的薄膜晶体管。

公开(公告)号：US06259120B1

公开(公告)日：2001-07-10

申请号：US09224955

申请日：1999-01-04

申请人： Hongyong Zhang ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Yasuhiko Takemura

IPC分类号： H01L2904

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78618

摘要： In a thin film transistor (TFT), a mask is formed on a gate electrode, and a porous anodic oxide is formed in both sides of the gate electrode using a relatively low voltage. A barrier anodic oxide is formed between the gate electrode and the porous anodic oxide and on the gate electrode using a relatively high voltage. A gate insulating film is etched using the barrier anodic oxide as a mask. The porous anodic oxide is selectively etched after etching barrier anodic oxide, to obtain a region of an active layer on which the gate insulating film is formed and the other region of the active layer on which the gate insulating film is not formed. An element including at least one of oxygen, nitrogen and carbon is introduced into the region of the active layer at high concentration in comparison with a concentration of the other region of the active layer. Further, N- or P-type impurity is introduced into the active layer. Accordingly, high resistance impurity regions are formed in both sides of a channel forming region.

摘要翻译： 在薄膜晶体管（TFT）中，在栅电极上形成掩模，并且使用相对低的电压在栅电极的两侧形成多孔阳极氧化物。 在栅电极和多孔阳极氧化物之间以及使用较高电压的栅电极上形成阻挡阳极氧化物。 使用阻挡阳极氧化物作为掩模蚀刻栅极绝缘膜。 在蚀刻阻挡阳极氧化物之后，选择性地蚀刻多孔阳极氧化物，以获得其上形成有栅极绝缘膜的有源层的区域和不形成栅极绝缘膜的有源层的另一区域。 与活性层的其他区域的浓度相比，包含氧，氮和碳中的至少一种的元素以高浓度被引入活性层的区域。 此外，将N型或P型杂质引入有源层。 因此，在沟道形成区域的两侧形成高电阻杂质区域。

公开(公告)号：US06218678B1

公开(公告)日：2001-04-17

申请号：US08815070

申请日：1997-03-11

申请人： Hongyong Zhang ,  Naoaki Yamaguchi ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Naoaki Yamaguchi ,  Yasuhiko Takemura

IPC分类号： H01L2904

CPC分类号： H01L27/1251 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/78621

摘要： A method of manufacturing a semiconductor device comprises the steps of forming a first insulating film on a semiconductor layer, forming a gate electrode on the insulating film, pattering the first insulating film into a second insulating film so that a portion of the semiconductor layer is exposed while the second insulating film has extensions which extend beyond the side edges of the gate electrode, and performing ion introduction for forming impurity regions using the gate electrode and extensions of the gate insulating film as a mask. The condition of the ion introduction is varied in order to control the regions of the semiconductor layer to be added with the impurity and the concentration of the impurity therein.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在半导体层上形成第一绝缘膜，在绝缘膜上形成栅电极，将第一绝缘膜图案化为第二绝缘膜，以使半导体层的一部分露出 而第二绝缘膜具有延伸超过栅电极的侧边缘的延伸，并且使用栅极电极和栅极绝缘膜的延伸作为掩模来执行用于形成杂质区域的离子引入。 离子引入的条件是变化的，以便控制加入杂质的半导体层的区域和其中杂质的浓度。