摘要:
A method of forming a block copolymer pattern comprises providing a substrate comprising a topographic pre-pattern comprising a ridge surface separated by a height, h, greater than 0 nanometers from a trench surface; disposing a block copolymer comprising two or more block components on the topographic pre-pattern to form a layer having a thickness of more than 0 nanometers over the ridge surface and the trench surface; and annealing the layer to form a block copolymer pattern having a periodicity of the topographic pre-pattern, the block copolymer pattern comprising microdomains of self-assembled block copolymer disposed on the ridge surface and the trench surface, wherein the microdomains disposed on the ridge surface have a different orientation compared to the microdomains disposed on the trench surface.
摘要:
An interconnection between a sublithographic-pitched structure and a lithographic pitched structure is formed. A plurality of conductive lines having a sublithographic pitch may be lithographically patterned and cut along a line at an angle less than 45 degrees from the lengthwise direction of the plurality of conductive lines. Alternately, a copolymer mixed with homopolymer may be placed into a recessed area and self-aligned to form a plurality of conductive lines having a sublithographic pitch in the constant width region and a lithographic dimension between adjacent lines at a trapezoidal region. Yet alternately, a first plurality of conductive lines with the sublithographic pitch and a second plurality of conductive lines with the lithographic pitch may be formed at the same level or at different.
摘要:
The present invention relates to dielectric nanostructures useful in semiconductor devices and other electronic devices and methods for manufacturing the dielectric nanostructures. The nanostructures generally comprises an array of isolated pillars positioned on a substrate. The methods of the present invention involve using semiconductor technology to manufacture the nanostructures from a mixture of a crosslinkable dielectric material and an amphiphilic block copolymer.
摘要:
Disclosed herein is a method of controlling the orientation of microphase-separated domains in a block copolymer film, comprising forming an orientation control layer comprising an epoxy-containing cycloaliphatic acrylic polymer on a surface of a substrate, irradiating and/or heating the substrate to crosslink the orientation control layer, and forming a block copolymer assembly layer comprising block copolymers which form microphase-separated domains, on a surface of the orientation control layer opposite the substrate. The orientation control layer can be selectively cross-linked to expose regions of the substrate, or the orientation control layer can be patterned without removing the layer, to provide selective patterning on the orientation control layer. In further embodiments, bilayer and trilayer imaging schemes are disclosed.
摘要:
A method for producing surface features and an etch masking method. A combination is provided of a block copolymer and additional material. The block copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. A film is formed of the combination directly onto a surface of a first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film of the combination and the first layer are etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. The film is removed and features remain on the surface of the first layer. Also included is an etch masking method where the nanostructures mask portions of the first layer from said etchant.
摘要:
Disclosed herein is a method of forming polymer structures comprising applying a solution of a diblock copolymer assembly comprising at least one diblock copolymer that forms lamellae, to a neutral surface of a substrate having a chemical pattern thereon, the chemical pattern comprising alternating pinning and neutral regions that are chemically distinct and which have a chemical pattern spatial frequency given by the number of paired sets of pinning and neutral regions along a given direction on the substrate; and forming domains comprising blocks of the diblock copolymer. The domains form by lateral segregation of the blocks. At least one domain has an affinity for the pinning regions and forms on the pinning region, the domains so formed on the pinning region are aligned with the underlying chemical pattern, and domains that do not form on the pinning region form adjacent to and are aligned with the domains formed on the pinning regions. In this way, a structure comprising repeating sets of domains is formed on the chemical pattern with a spatial frequency given by the number of repeating sets of domains in the given direction, that is at least twice that of the chemical pattern spatial frequency. Methods of forming the chemical patterns, and pattern transfer methods using patterned domains, are also disclosed.
摘要:
A method. A first copolymer is provided. A substrate is provided having an energetically neutral surface layer with at least one trough integrally disposed thereon with sidewalls. A first film of the first copolymer is coated inside the trough. Line-forming microdomains are assembled of the first copolymer forming first self-assembled structures within the first film normal to the sidewalls and parallel to the surface layer. The first and second polymer blocks are removed from the first film and oriented structures remain in the trough normal to the sidewalls and parallel to the surface layer. A second film of a second copolymer is coated inside the trough. Line-forming microdomains are assembled of the second copolymer, and form second self-assembled structures within the second film oriented normal to the oriented structures and parallel to the sidewalls. The third and fourth polymer blocks are removed, and at least one second oriented structure remains.