公开(公告)号：US20060052026A1

公开(公告)日：2006-03-09

申请号：US11000196

申请日：2004-12-01

申请人： Seung Ra ,  Jong Lee

发明人： Seung Ra ,  Jong Lee

IPC分类号： H01J9/14 ,  H01J9/04 ,  H01J9/12

CPC分类号： H01J9/025

摘要： Disclosed herein is a simplified method of producing a field emission type cold-cathode device, which can reduce the number of processes required to produce the field emission type cold-cathode device. The method includes applying an insulating material on a mesh-shaped thin conductive metal film to a predetermined thickness to integrally form a gate and an insulating layer, or simultaneously forming an insulating layer and a spacer on a mesh-shaped thin conductive metal film, and subsequently mounting the resulting structure on an upper side of a cathode.

摘要翻译： 本文公开了一种制造场致发射型冷阴极器件的简化方法，其可以减少制造场致发射型冷阴极器件所需的工艺数量。 该方法包括将网状薄导电金属膜上的绝缘材料施加到预定厚度以一体地形成栅极和绝缘层，或者同时在网状薄导电金属膜上形成绝缘层和间隔物，以及 随后将所得结构安装在阴极的上侧。

公开(公告)号：US20060041904A1

公开(公告)日：2006-02-23

申请号：US11168335

申请日：2005-06-29

申请人： Jong Lee

发明人： Jong Lee

IPC分类号： H04N7/16 ,  H04N5/445 ,  G06F13/00 ,  G06F3/00

CPC分类号： H04H60/65 ,  H04H60/39 ,  H04N5/44543 ,  H04N7/17309 ,  H04N21/25891 ,  H04N21/4532 ,  H04N21/4667 ,  H04N21/482

摘要： A broadcasting system and a control method thereof providing convenient channel selection are provided. In the method, channel rating information is transmitted from a broadcasting station to a display device. Channel priority is determined based on the transmitted channel rating information. Channel information is displayed on the display device according to the channel priority.

摘要翻译： 提供一种广播系统及其提供便利的频道选择的控制方法。 在该方法中，信道评级信息从广播站发送到显示设备。 基于发送的信道评级信息来确定信道优先级。 信道信息根据信道优先级显示在显示设备上。

公开(公告)号：US20060037215A1

公开(公告)日：2006-02-23

申请号：US10939220

申请日：2004-09-10

申请人： Jong Lee

发明人： Jong Lee

IPC分类号： A43B5/04

CPC分类号： A43C11/165 ,  A43B5/00 ,  A43B5/0401 ,  A43B5/0445 ,  A43B5/0447 ,  A43C11/1493 ,  A43C11/16

摘要： Disclosed is an apparatus for tightening a top of a foot in a leisure sports boot having a sole forming the bottom of the boot; a boot upper rim forming the top end of the boot and having a U-shaped front surface; a boot upper being extended between the sole and the boot upper rim, and consisting of an outside upper forming an outer appearance and an inside upper adhered to a foot; a top of foot protection upper installed inside the U-shaped boot upper rim; and a tightening band tied between the boot upper rims in a zigzag shape outside the top of foot protection upper, the apparatus includes a top of foot tightening means installed inside the top of foot protection upper, for compressing the top of the foot to the sole, a wire passing through the top of foot tightening means, and pulling the top of foot tightening means to the top of the foot so that the heel can be fixedly adhered to the sole, and a wire fixing device connected to both ends of the wire, for selectively pulling or releasing the wire.

摘要翻译： 公开了一种用于在具有形成底部底部的鞋底的休闲运动靴中收紧脚的顶部的装置; 靴子上缘形成靴子的顶端并具有U形前表面; 靴底部在鞋底和靴子上缘之间延伸，并且由形成外观的外侧鞋面和附着在脚的内部上部构成; 顶部的脚部保护上部安装在U形靴子上缘内部; 以及在脚保护鞋面上方之间以锯齿形形式固定在靴子上缘之间的紧固带，该装置包括安装在足部保护鞋面上方的足部紧固装置的顶部，用于将脚的顶部压缩至鞋底 穿过脚部紧固装置的顶部的电线，并且将脚部紧固装置的顶部拉到脚的顶部，使得脚后跟可以固定地粘附到鞋底，并且电线固定装置连接到电线的两端 ，用于选择性地拉或释放导线。

公开(公告)号：US20050219436A1

公开(公告)日：2005-10-06

申请号：US11024807

申请日：2004-12-30

申请人： Keuk Kwon ,  Dae Park ,  Seong Hwang ,  Sung Kang ,  Jong Lee ,  Bung Kim ,  Jong Choi

发明人： Keuk Kwon ,  Dae Park ,  Seong Hwang ,  Sung Kang ,  Jong Lee ,  Bung Kim ,  Jong Choi

IPC分类号： G02F1/1368 ,  G02F1/136 ,  G02F1/1362

CPC分类号： G02F1/136209 ,  G02F1/136213 ,  G02F2001/136218

摘要： An LCD device with improved an aperture ratio and decreased parasitic capacitance has a passivation layer of an inorganic material and which includes a gate line on a first substrate; a gate insulating layer on an entire surface of the first substrate including the gate line; a data line on the gate insulating layer in perpendicular to the gate line, to define a pixel region; a thin film transistor at a crossing portion of the gate and data lines; a passivation layer on the entire surface of the first substrate including the thin film transistor; a pixel electrode on the passivation layer, for being connected with a drain electrode of the thin film transistor; and a light-shielding metal for receiving a voltage, formed between the data line and the pixel electrode, to prevent a parasitic capacitance between the data line and the pixel electrode.

摘要翻译： 具有提高开口率和降低的寄生电容的LCD器件具有无机材料的钝化层，并且在第一衬底上包括栅极线; 在包括栅极线的第一基板的整个表面上的栅极绝缘层; 栅极绝缘层上垂直于栅极线的数据线，以限定像素区域; 在栅极和数据线的交叉部分处的薄膜晶体管; 在包括薄膜晶体管的第一衬底的整个表面上的钝化层; 钝化层上的像素电极，用于与薄膜晶体管的漏电极连接; 以及用于接收形成在数据线和像素电极之间的电压的遮光金属，以防止数据线和像素电极之间的寄生电容。

公开(公告)号：US20050215032A1

公开(公告)日：2005-09-29

申请号：US11009246

申请日：2004-12-10

申请人： Joon Seo ,  Hyuk Moon ,  Cheol Han ,  Jong Lee ,  Kyung Wi

发明人： Joon Seo ,  Hyuk Moon ,  Cheol Han ,  Jong Lee ,  Kyung Wi

IPC分类号： C09J7/02 ,  C09J5/00 ,  C09J7/00 ,  H01L21/301 ,  H01L21/304 ,  H01L21/58 ,  H01L21/68 ,  H01L21/78

CPC分类号： H01L21/78 ,  C09J7/22 ,  C09J7/35 ,  C09J2201/134 ,  C09J2203/326 ,  C09J2463/00 ,  C09J2467/006 ,  C09J2479/08 ,  H01L21/6836 ,  H01L24/27 ,  H01L24/29 ,  H01L24/45 ,  H01L24/73 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83856 ,  H01L2224/85201 ,  H01L2224/92247 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/32245 ,  H01L2224/48247

摘要： The present invention relates to a dicing film having an adhesive film for dicing a wafer and a die adhesive film, which are used for manufacturing a semiconductor package, and a method of manufacturing a semiconductor package using the same. More particularly, the present invention relates to a dicing film wherein a shrinkage release film is inserted between an adhesive film for dicing a wafer and a die adhesive film so that the die adhesive film and a die can be easily separated from the adhesive film for dicing a wafer when picking up a semiconductor die, and a method of manufacturing a semiconductor package using the same.

摘要翻译： 本发明涉及一种具有用于切割晶片的粘合剂膜和用于制造半导体封装的芯片粘合膜的切割膜以及使用其的半导体封装的制造方法。 更具体地说，本发明涉及一种切割膜，其中将收缩剥离膜插入在用于切割晶片的粘合膜和模片粘合剂膜之间，使得模片粘合剂膜和模具可以容易地从用于切割的粘合剂膜分离 拾取半导体管芯时的晶片，以及使用其制造半导体封装的方法。

公开(公告)号：US20050198104A1

公开(公告)日：2005-09-08

申请号：US11044557

申请日：2005-01-27

申请人： Oh Kwon ,  Jae Hahm ,  Sang Kim ,  Jong Lee ,  Hyung Park ,  Kyung Park ,  Shin Kim ,  Kwang Koh

发明人： Oh Kwon ,  Jae Hahm ,  Sang Kim ,  Jong Lee ,  Hyung Park ,  Kyung Park ,  Shin Kim ,  Kwang Koh

IPC分类号： G06F15/163 ,  G06F15/16

CPC分类号： G06F9/5072

摘要： Disclosed is a file-based grid MPI job allocation system for a middleware-based grid computing system in which computers having a plurality of resources including an MPI program are distributed and connected to each other through a network, wherein the grid MPI job allocation system differentiates functions of a middleware and the MPI program, thereby achieving MPI initialization without intervention of a separate arbitration process. The job submission service module generates a file containing an address, a port number, etc. of each node, which are necessary for the MPI initialization, and sends the file to the job execution service module of the corresponding node. Each job execution service module executes the MPI job, and the MPI program waits for the generation of the file and then performs initialization by using the information in the file. The present invention clearly differentiates the jobs to be done by the MPI program and by the job submission service module in the middleware, thereby enabling the MPI program to be executed in the grid computing system regardless of the design of the middleware.

摘要翻译： 公开了一种用于基于中间件的网格计算系统的基于文件的网格MPI作业分配系统，其中包括MPI程序的多个资源的计算机通过网络分布并彼此连接，其中网格MPI作业分配系统区分 中间件和MPI程序的功能，从而实现MPI初始化，而不需要单独的仲裁过程。 作业提交服务模块生成包含MPI初始化所需的每个节点的地址，端口号等的文件，并将该文件发送到相应节点的作业执行服务模块。 每个作业执行服务模块执行MPI作业，并且MPI程序等待文件的生成，然后使用文件中的信息执行初始化。 本发明明确区分由MPI程序和作业提交服务模块在中间件中完成的作业，从而使得能够在网格计算系统中执行MPI程序，而不管中间件的设计如何。

公开(公告)号：US20050148756A1

公开(公告)日：2005-07-07

申请号：US10481475

申请日：2003-10-24

申请人： Ik-Hyeon Kwon ,  Yun-Hyuk Bang ,  Jong Lee ,  Deuk-Jin Lee ,  In-Ho Lee

发明人： Ik-Hyeon Kwon ,  Yun-Hyuk Bang ,  Jong Lee ,  Deuk-Jin Lee ,  In-Ho Lee

IPC分类号： B60C9/00 ,  B60C9/08 ,  D01F6/62 ,  C08G63/02

CPC分类号： D01F6/62 ,  B60C9/0042 ,  B60C9/02 ,  B60C9/04 ,  B60C9/08 ,  Y10T428/2933

摘要： The present invention relates to a high strength polyethylene-2,6-naphthalate fiber produced by a method comprising controlling the stress-strain curve and fine structure of an undrawn yarn such that the drawability of the undrawn yarn in a drawing step is improved. The industrial polyethylene-2,6-naphthalate fiber with high strength according to the present invention shows high strength and low shrinkage, and a treated cord formed from this fiber has improved dimensional stability and high strength, such that it can be advantageously employed as a fibrous reinforcement material of rubber products such as tires.

摘要翻译： 本发明涉及一种高强度的聚2,6-萘二甲酸乙二醇酯纤维，它是通过控制未拉伸丝的应力 - 应变曲线和精细结构的方法制成的，使拉伸步骤中未拉伸丝的拉伸性提高。 根据本发明的具有高强度的工业聚2,6-萘二甲酸乙二醇酯纤维显示出高强度和低收缩率，并且由该纤维形成的处理帘线具有改进的尺寸稳定性和高强度，使得其可有利地用作 橡胶制品如轮胎的纤维增强材料。

公开(公告)号：US20050145926A1

公开(公告)日：2005-07-07

申请号：US10751860

申请日：2004-01-06

申请人： Jong Lee

发明人： Jong Lee

IPC分类号： H01L21/28 ,  H01L29/423 ,  H01L29/788

CPC分类号： B82Y10/00 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42324 ,  H01L29/42332 ,  H01L29/7881

摘要： The conventional flash memory device is fabricated by the MOS processing technology on a bulk substrate and has a similar configuration to an MOS device. While the conventional CMOS device has a superior scaling down characteristic, the scaling down characteristic of a flash memory device is poor due to the inability to reduce the thickness below 7 nm or 8 nm for the tunneling oxide film where the charges in the channel are tunneled into the floating electrode through the tunneling oxide. In order to resolve this problem, the present invention, instead of a SOI wafer, uses a cheaper bulk silicon wafer with lower defect density. A wall shape Fin active region where the channel and the source/drain are formed is connected to the bulk silicon substrate by which floating body effect and heat conduction problem are resolved. a flash memory device is fabricated by forming a tunneling oxide film on side surfaces of the Fin active and a floating (storage) electrode where the charges could be stored. The above structure has a superior scaling down characteristic and enhanced memory performance due to a double-gate flash memory device structure.

摘要翻译： 传统的闪速存储器件通过MOS处理技术在大容量衬底上制造并且具有与MOS器件相似的配置。 虽然传统的CMOS器件具有优越的缩小特性，但是由于无法将通道中的电荷隧穿的隧道氧化物膜的厚度减小到7nm或8nm以下，所以闪存器件的缩小特性很差 通过隧道氧化物进入浮动电极。 为了解决这个问题，本发明代替SOI晶片使用较低缺陷密度的较便宜的体硅晶片。 形成沟道和源极/漏极的壁形Fin有源区连接到体硅衬底，浮体效应和热传导问题被解决。 通过在Fin活性物质和可以储存电荷的浮动（储存）电极的侧表面上形成隧道氧化膜来制造闪速存储器件。 由于双栅闪存器件结构，上述结构具有优异的缩小特性和增强的存储器性能。

公开(公告)号：US20050142946A1

公开(公告)日：2005-06-30

申请号：US10978347

申请日：2004-11-02

申请人： Seung Baek ,  Yong Lee ,  Jong Lee

发明人： Seung Baek ,  Yong Lee ,  Jong Lee

IPC分类号： H01J23/15 ,  H01G4/35 ,  H01J23/00 ,  H01J23/16 ,  H01R13/66

CPC分类号： H01G4/35

摘要： A high pressure condenser for a magnetron, in which a pair of dielectric ceramics having an arch shape are separated from each other, central conductors are connected to internal peripheries of the dielectric ceramics, and a ground metal is connected to external peripheries of the dielectric ceramics, thereby not requiring any additional structure for connecting the dielectric ceramics and the central conductors, simplifying the structures of the central conductors, and reducing the quantity of the dielectric ceramics needed in proportion to the separation interval between the dielectric ceramics.

摘要翻译： 一种用于磁控管的高压冷凝器，其中具有拱形形状的一对电介质陶瓷彼此分离，中心导体连接到电介质陶瓷的内周，并且接地金属连接到电介质陶瓷的外周 ，因此不需要用于连接电介质陶瓷和中心导体的任何附加结构，简化中心导体的结构，并且减少与电介质陶瓷之间的分隔间隔成比例所需的电介质陶瓷的量。

公开(公告)号：US20050133723A1

公开(公告)日：2005-06-23

申请号：US10746952

申请日：2003-12-23

申请人： Jong Lee ,  Jer-Shen Maa ,  Douglas Tweet ,  Sheng Hsu

发明人： Jong Lee ,  Jer-Shen Maa ,  Douglas Tweet ,  Sheng Hsu

IPC分类号： G01J5/20 ,  H01L21/00 ,  H01L21/20 ,  H01L27/146 ,  H01L29/165 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/10 ,  H01L31/109 ,  H01L31/18

CPC分类号： H01L31/105 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02639 ,  H01L27/14627 ,  H01L27/14643 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/108 ,  H01L31/109 ,  H01L31/1812 ,  Y02E10/547

摘要： A SiGe surface-normal optical path photodetector structure and a method for forming the SiGe optical path normal structure are provided. The method comprises: forming a Si substrate with a surface; forming a Si feature, normal with respect to the Si substrate surface, such as a via, trench, or pillar; depositing SiGe overlying the Si normal feature to a thickness in the range of 5 to 1000 nanometers (nm); and, forming a SiGe optical path normal structure having an optical path length in the range of 0.1 to 10 microns. Typically, the SiGe has a Ge concentration in the range from 5 to 100%. The Ge concentration may be graded to increase with respect to the deposition thickness. For example, the SiGe may have a 20% concentration of Ge at the Si substrate interface, a 30% concentration of Ge at a SiGe film top surface, and a thickness of 400 nm.

摘要翻译： 提供SiGe表面法线光路检测器结构和形成SiGe光路法线结构的方法。 该方法包括：用表面形成Si衬底; 形成Si特征，相对于诸如通孔，沟槽或柱的Si衬底表面是正常的; 将Si覆盖Si正常特征的SiGe沉积到5至1000纳米（nm）范围内的厚度; 并且形成光程长度为0.1〜10微米的SiGe光路法线结构。 通常，SiGe的Ge浓度为5〜100％。 Ge浓度可以相对于沉积厚度而分级增加。 例如，SiGe可以在Si衬底界面处具有20％的Ge浓度，在SiGe膜顶表面上可以具有30％的Ge浓度，并且厚度为400nm。