公开(公告)号：US06548426B1

公开(公告)日：2003-04-15

申请号：US09625355

申请日：2000-07-25

Applicant: Setsu Suzuki ,  Kazuo Maeda

Inventor： Setsu Suzuki ,  Kazuo Maeda

IPC: H02L2131

CPC classification number: H01L21/02164 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/3105 ,  H01L21/31612

Abstract: There is provided a method for improving film quality of an insulating film, which includes the steps of forming a silicon oxide film on a substrate, and heating the silicon oxide film by contacting an exposed surface of the silicon oxide film with a steam-containing atmosphere after the silicon oxide film is formed.

公开(公告)号：US06504154B2

公开(公告)日：2003-01-07

申请号：US09783994

申请日：2001-02-16

Applicant: Junji Iida ,  Akira Terashima ,  Kazuo Maeda ,  Shintaro Ishikawa ,  Shinji Yamauchi

Inventor： Junji Iida ,  Akira Terashima ,  Kazuo Maeda ,  Shintaro Ishikawa ,  Shinji Yamauchi

IPC: G01N2135

CPC classification number: G01N21/3563 ,  G01N33/025

Abstract: A non-destructive sugar content measuring apparatus having a plurality of trays on which vegetables and fruits are to be placed, a transport device for successively delivering the trays at appropriate intervals, and first, second and third measuring sections provided in the course of a transport path and at which laser beams having wavelengths &lgr;1, &lgr;2 and &lgr;3 are respectively made incident on each vegetable or fruit and the amount of light of each laser beam emergent from the vegetable or fruit is measured with a detector provided at each measuring section and the absorbance of each laser beam is determined from the amount of incident light made incident on the vegetable or fruit and the amount of detected light which has been measured with the detector, to measure the sugar content of the vegetables and fruits on the basis of each absorbance.

Abstract translation: 一种无损糖测量装置，具有多个托盘，蔬菜和水果放置在其上，用于以适当的间隔连续输送托盘的运送装置以及在运输过程中设置的第一，第二和第三测量部分 路径，并且具有波长lambd1，lambd2和lambd3的激光束分别入射到每个蔬菜或水果上，并且用在每个测量部分提供的检测器测量从蔬菜或水果出射的每个激光束的光量，并且吸光度 根据入射到植物或果实上的入射光量和用检测器测量的检测光的量来确定每个激光束，以根据每个吸光度测量蔬菜和水果的糖含量。

公开(公告)号：US06472818B1

公开(公告)日：2002-10-29

申请号：US09615735

申请日：2000-07-13

Applicant: Taku Ikeda ,  Kazuo Maeda

Inventor： Taku Ikeda ,  Kazuo Maeda

IPC: H01K154

CPC classification number: H01K1/54

Abstract: Providing a light bulb having a long life by preventing filament coil breakage. A glass bulb (1) has a sealing portion (4) at one end thereof and contains a filament coil (5). The filament coil (5) is suspended between lead-in wires (7, 8) extended externally of the sealing portion (4), with its opposite ends connected to respective one ends of the wires. The lead-in wires (7, 8) are supported by a stem (6) disposed between the sealing portion (4) and the filament coil (5). A getter (9) is disposed between the sealing portion (4) and the stem (6).

Abstract translation: 通过防止灯丝线圈断裂，提供寿命长的灯泡。 玻璃灯泡（1）在其一端具有密封部分（4）并且包含灯丝线圈（5）。 灯丝线圈（5）悬挂在从密封部分（4）的外部延伸的引入线（7,8）之间，其相对端连接到电线的相应一端。 导线（7,8）由设置在密封部分（4）和灯丝线圈（5）之间的杆（6）支撑。 吸气剂（9）设置在密封部分（4）和杆（6）之间。

公开(公告)号：US06420276B2

公开(公告)日：2002-07-16

申请号：US09904868

申请日：2001-07-16

Applicant: Taizo Oku ,  Junichi Aoki ,  Youichi Yamamoto ,  Takashi Koromokawa ,  Kazuo Maeda

Inventor： Taizo Oku ,  Junichi Aoki ,  Youichi Yamamoto ,  Takashi Koromokawa ,  Kazuo Maeda

IPC: H01L2131

CPC classification number: H01L21/02164 ,  C23C16/401 ,  C23C16/509 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02214 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834

Abstract: The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film containing a coating insulating film having a low dielectric constant. In construction, there are provided the steps of preparing a substrate 20 on a surface of which a coating insulating film 26 is formed by coating a coating liquid containing any one selected from a group consisting of silicon-containing inorganic compound and silicon-containing organic compound, and forming a protection layer 27 for covering the coating insulating film 26 by plasmanizing a first film forming gas to react, wherein the first film forming gas consists of any one selected from a group consisting of alkoxy compound having Si—H bonds and siloxane having Si—H bonds and any one oxygen-containing gas selected from a group consisting of O2, N2O, NO2, CO, CO2, and H2O.

Abstract translation: 本发明涉及一种形成含有低介电常数的涂层绝缘膜的层间绝缘膜的半导体器件制造方法。 在构造中，提供了在其表面上制备基材20的步骤，该基材20通过涂布包含选自含硅无机化合物和含硅有机化合物中的任何一种的涂布液而形成涂覆绝缘膜26 并且形成用于通过使第一成膜气体等离子体反应来覆盖涂层绝缘膜26的保护层27，其中第一成膜气体由选自由具有Si-H键的烷氧基化合物和硅氧烷组成的组中的任何一种组成， Si-H键和选自O 2，N 2 O，NO 2，CO，CO 2和H 2 O的任何一种含氧气体。

公开(公告)号：US06403410B1

公开(公告)日：2002-06-11

申请号：US09431073

申请日：1999-11-01

Applicant: Kouichi Ohira ,  Bunya Matsui ,  Kazuo Maeda

Inventor： Kouichi Ohira ,  Bunya Matsui ,  Kazuo Maeda

IPC: H01L21338

CPC classification number: H01J37/32412 ,  H01J37/3211 ,  H01J37/3244 ,  H01J37/32688

Abstract: The present invention relates to a plasma doping system capable of handling larger-diameter wafers and of introducing impurities to a shallow depth with a lower energy level. The plasma doping system includes a plasma generation chamber provided with a high-frequency power source and with antennas for generating a helicon plasma of a gas containing conduction type impurities. An impurity introduction chamber is provided with a substrate holding fixture. A plasma flow passage/shaping chamber provides a flow passage through which the helicon plasma flows from the plasma generation chamber to the impurity introduction chamber and has a magnetic field generator for generating a magnetic field to constrict the helicon plasma flowing therethrough.

Abstract translation: 本发明涉及一种等离子体掺杂系统，其能够处理较大直径的晶片并将杂质引入具有较低能级的浅深度。 等离子体掺杂系统包括具有高频电源的等离子体产生室和用于产生含有导电型杂质的气体的螺旋等离子体的天线。 杂质引入室设置有基板固定夹具。 等离子体流动通道/成形室提供了一个流动通道，螺旋血浆等离子体通过该流道从等离子体产生室流向杂质引入室，并且具有用于产生磁场的磁场发生器，以收缩流过其中的螺旋血浆等离子体。

公开(公告)号：US06281113B1

公开(公告)日：2001-08-28

申请号：US09492528

申请日：2000-01-27

Applicant: Kazuo Maeda

Inventor： Kazuo Maeda

IPC: H01L214763

CPC classification number: H01L21/02126 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831 ,  H01L2221/1047

Abstract: A method for forming an interlayer insulating film is disclosed. This method includes the steps of: forming a first insulating film on a substrate, the film containing at least one of H2O, C and a hydrocarbon; forming pores in the first insulating film by heat treatment of the first insulating film to discharge the H2O, C or hydrocarbon therefrom; and forming a second insulating film on the porous first insulating film.

Abstract translation: 公开了一种用于形成层间绝缘膜的方法。 该方法包括以下步骤：在衬底上形成第一绝缘膜，所述膜含有H 2 O，C和烃中的至少一种; 通过第一绝缘膜的热处理在第一绝缘膜中形成孔，以从其中排出H 2 O，C或烃; 以及在所述多孔第一绝缘膜上形成第二绝缘膜。

公开(公告)号：US6133162A

公开(公告)日：2000-10-17

申请号：US897439

申请日：1997-07-21

Applicant: Setsu Suzuki ,  Junichi Aoki ,  Kazuo Maeda

Inventor： Setsu Suzuki ,  Junichi Aoki ,  Kazuo Maeda

IPC: H01L21/302 ,  H01L21/306 ,  H01L21/316 ,  H01L21/31 ,  H01L21/469

CPC classification number: H01L21/02068 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02301 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/31612

Abstract: There is provided a film forming pre-treatment method used when silicon containing insulating film, etc. are to be formed by virtue of thermal CVD method on a substrate 101 on which interconnection layers, etc. are formed. Before an insulating film is deposited on the substrate 101, gaseous H.sub.2 O is plasmanized and then a surface of the substrate 101 is exposed to such plasmanized H.sub.2 O.

Abstract translation: 提供了在形成有互连层等的基板101上通过热CVD法形成含硅绝缘膜等时使用的成膜预处理方法。 在绝缘膜沉积在衬底101上之前，将气态H 2 O质子化，然后将衬底101的表面暴露于这种质子化的H 2 O.

公开(公告)号：US6110814A

公开(公告)日：2000-08-29

申请号：US330052

申请日：1999-06-11

Applicant: Noboru Tokumasu ,  Kazuo Maeda

Inventor： Noboru Tokumasu ,  Kazuo Maeda

IPC: H01L21/31 ,  C23C16/40 ,  C23C16/56 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/768 ,  H01L21/4763

CPC classification number: H01L21/76819 ,  C23C16/401 ,  C23C16/56 ,  H01L21/31051

Abstract: The present invention relates to a film forming method for forming a planarized interlayer insulating film to cover wiring layers, etc. of a semiconductor integrated circuit device. The method includes the steps of forming on a substrate 206, a phosphorus-containing insulating film 45a containing P.sub.2 O.sub.3 by using a film forming gas in which an oxidizing. gas is added into a gas mixture including a phosphorus-containing compound, which has III valence phosphorus and in which oxygen is bonded to at least one bond of the III valence phosphorus, and silicon-containing compound, or by using the film forming gas from which the oxidizing gas removed, heating the phosphorus-containing insulating film 45a while applying acceleration to the insulating film 45a to fluidize the insulating film and thus planarize a surface of the insulating film 45b while the insulating film 45a has a predetermined viscosity, and heating further the insulating film 45b after the surface of the insulating film 45b has been planarized, to sublimate P.sub.2 O.sub.3 in the insulating film 45b and thus solidify the insulating film 45b.

Abstract translation: 本发明涉及一种用于形成半导体集成电路器件的布线层等的平坦化层间绝缘膜的成膜方法。 该方法包括以下步骤：通过使用其中进行氧化的成膜气体，在基板206上形成含有P 2 O 3的含磷绝缘膜45a。 将气体加入到含有III价态的磷的含磷化合物的气体混合物中，其中氧与III价态的磷的至少一个键结合，并且含硅化合物，或者通过使用成膜气体从 除去氧化气体，同时加热含磷绝缘膜45a，同时对绝缘膜45a施加加速度，使绝缘膜流化，从而使绝缘膜45b的表面平坦化，同时绝缘膜45a具有预定的粘度，并进一步加热 绝缘膜45b的表面之后的绝缘膜45b被平坦化，以使绝缘膜45b中的P2O3升华，从而固化绝缘膜45b。

公开(公告)号：US5915200A

公开(公告)日：1999-06-22

申请号：US842425

申请日：1997-04-24

Applicant: Noboru Tokumasu ,  Kazuo Maeda

Inventor： Noboru Tokumasu ,  Kazuo Maeda

IPC: H01L21/768 ,  C23C16/40 ,  H01L21/316 ,  H01L23/522 ,  H01L21/443

CPC classification number: H01L21/02129 ,  C23C16/401 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/31625

Abstract: A film forming method is provided for forming a planarized interlayer insulating film for covering interconnection layers, etc. of a semiconductor integrated circuit device. While supplying a reaction gas including a phosphorus containing compound which has III valence phosphorus and at least one bond of phosphorus to oxygen, a silicon containing insulating film including P.sub.2 O.sub.3 is formed on a deposition substrate, thereby greatly reducing fluidization temperature for planarization.

Abstract translation: 提供一种成膜方法，用于形成用于覆盖半导体集成电路器件的互连层等的平面化层间绝缘膜。 在将含有III价磷和至少一个磷键的含磷化合物的反应气体供给到氧的同时，在沉积基板上形成包含P 2 O 3的含硅绝缘膜，从而大大降低了用于平坦化的流化温度。

公开(公告)号：US5858100A

公开(公告)日：1999-01-12

申请号：US416006

申请日：1995-04-04

Applicant: Kazuo Maeda ,  Kouichi Ohira ,  Yuhko Nishimoto

Inventor： Kazuo Maeda ,  Kouichi Ohira ,  Yuhko Nishimoto

IPC: C30B25/12 ,  C23C16/458 ,  C23C16/507 ,  H01L21/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  C23C16/00

CPC classification number: H01L21/67103 ,  C23C16/4586 ,  C23C16/507

Abstract: The present invention relates to a reaction apparatus for receiving a reaction gas and for heating a substrate so as to form a film such as an insulating film on the substrate or for etching, with reduced power consumption for heating the substrate. The apparatus can change a substrate temperature within a short period of time, and maintains throughput while reducing labor and cost for maintenance. The apparatus includes a substrate holder (12) with a base of an insulating material in which an electrode (22) and a heater (23) for heating the held substrate (20) are contained. The apparatus also includes a processing chamber (7) enclosed by a chamber wall (7a).

Abstract translation: 本发明涉及一种反应装置，用于接收反应气体并加热基板，以便在基板上形成诸如绝缘膜的膜或用于蚀刻，同时降低了用于加热基板的功率消耗。 该装置可以在短时间内改变基板温度，并且在减少维护的劳动力和成本的同时保持生产量。 该装置包括具有绝缘材料的基部的基板保持件（12），其中包含用于加热保持的基板（20）的电极（22）和加热器（23）。 该装置还包括由室壁（7a）包围的处理室（7）。