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142 条记录 (耗时 0.049 秒)

    Electrolytic solution containing 4-fluoro-1, 3-dioxolane-2-one solvent
    81.
    发明授权
    Electrolytic solution containing 4-fluoro-1, 3-dioxolane-2-one solvent 有权
    含有4-氟-1,3-二氧戊环-2-酮溶剂的电解液

    公开(公告)号：US07709142B2

    公开(公告)日：2010-05-04

    申请号：US11567951

    申请日：2006-12-07

    申请人： Shinya Wakita ,  Izaya Okae ,  Yosuke Ushio ,  Yoshiaki Takeuchi ,  Saori Tokuoka

    发明人： Shinya Wakita ,  Izaya Okae ,  Yosuke Ushio ,  Yoshiaki Takeuchi ,  Saori Tokuoka

    IPC分类号： H01M6/04 ,  H01M6/16

    CPC分类号： H01M10/0569 ,  H01M10/0587 ,  H01M2004/021 ,  H01M2010/4292

    摘要： A battery capable of obtaining a high energy density and obtaining superior cycle characteristics is provided. The thickness of a cathode active material layer is from 100 μm to 130 μm. The thickness of an anode active material layer is from 85 μm to 120 μm, and the volume density of the anode active material layer is from 1.7 g/cm3 to 1.85 g/cm3. An electrolytic solution contains 4-fluoro-1,3-dioxolane-2-one. Thereby, even when the thicknesses of the cathode active material layer and the anode active material layer are increased, the diffusion and acceptance of lithium in an anode are improved, and superior cycle characteristics can be obtained.

    摘要翻译： 提供能够获得高能量密度并获得优异的循环特性的电池。 阴极活性物质层的厚度为100μm〜130μm。 负极活性物质层的厚度为85μm〜120μm，负极活性物质层的体积密度为1.7g / cm 3〜1.85g / cm 3。 电解液含有4-氟-1,3-二氧戊环-2-酮。 由此，即使阴极活性物质层和负极活性物质层的厚度增加，也能够提高阳极中的锂的扩散和接受性，能够获得优异的循环特性。

    Photovoltaic device and process for producing same
    82.
    发明申请
    Photovoltaic device and process for producing same 审中-公开
    光伏器件及其制造方法

    公开(公告)号：US20080196761A1

    公开(公告)日：2008-08-21

    申请号：US12003261

    申请日：2007-12-21

    申请人： Youji Nakano ,  Yoshiaki Takeuchi ,  Kengo Yamaguchi ,  Yasuhiro Yamauchi

    发明人： Youji Nakano ,  Yoshiaki Takeuchi ,  Kengo Yamaguchi ,  Yasuhiro Yamauchi

    IPC分类号： H01L31/028

    CPC分类号： H01L31/077 ,  H01L31/0236 ,  H01L31/056 ,  H01L31/076 ,  H01L31/182 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521

    摘要： A photovoltaic device and a process for producing the photovoltaic device that combine a high photovoltaic conversion efficiency with a high level of productivity. The photovoltaic device includes at least a transparent electrode-bearing substrate, prepared by providing a transparent electrode layer on a transparent, electrically insulating substrate, and a photovoltaic layer containing mainly crystalline silicon-based semiconductors and a back electrode layer formed sequentially on the transparent electrode layer of the transparent electrode-bearing substrate, wherein the surface of the transparent electrode layer of the transparent electrode-bearing substrate has a shape that contains a mixture of coarse and fine roughness, and exhibits a spectral haze ratio of 20% or greater for wavelengths of from 550 nm to 800 nm, and the photovoltaic layer containing mainly crystalline silicon-based semiconductors has a film thickness of from 1.2 μm to 2 μm, and a Raman ratio of from 3.0 to 8.0.

    摘要翻译： 一种光电器件和用于生产光伏器件的方法，其结合了高的光电转换效率和高生产率。 光电器件至少包括透明电极承载基板，其通过在透明电绝缘基板上提供透明电极层，以及主要包含晶体硅基半导体的光电层和在透明电极上依次形成的背电极层 所述透明电极承载基板的所述透明电极承载基板的所述透明电极层的表面具有包含粗糙度和粗糙度的混合物的形状，并且对于波长具有20％以上的光谱雾度比 并且主要含有结晶硅系半导体的光电转换层的膜厚为1.2〜2μm，拉曼比为3.0〜8.0。

    BATTERY
    83.
    发明申请
    BATTERY 有权
    电池

    公开(公告)号：US20070148541A1

    公开(公告)日：2007-06-28

    申请号：US11567951

    申请日：2006-12-07

    申请人： Shinya Wakita ,  Izaya Okae ,  Yosuke Ushio ,  Yoshiaki Takeuchi ,  Saori Tokuoka

    发明人： Shinya Wakita ,  Izaya Okae ,  Yosuke Ushio ,  Yoshiaki Takeuchi ,  Saori Tokuoka

    IPC分类号： H01M10/40

    CPC分类号： H01M10/0569 ,  H01M10/0587 ,  H01M2004/021 ,  H01M2010/4292

    摘要： A battery capable of obtaining a high energy density and obtaining superior cycle characteristics is provided. The thickness of a cathode active material layer is from 100 μm to 130 μm. The thickness of an anode active material layer is from 85 μm to 120 μm, and the volume density of the anode active material layer is from 1.7 g/cm3 to 1.85 g/cm3. An electrolytic solution contains 4-fluoro-1,3-dioxolane-2-one. Thereby, even when the thicknesses of the cathode active material layer and the anode active material layer are increased, the diffusion and acceptance of lithium in an anode are improved, and superior cycle characteristics can be obtained.

    摘要翻译： 提供能够获得高能量密度并获得优异的循环特性的电池。 阴极活性物质层的厚度为100〜130μm。 阳极活性物质层的厚度为85μm〜120μm，负极活性物质层的体积密度为1.7g / cm 3〜1.85g / cm 3， / SUP>。 电解液含有4-氟-1,3-二氧戊环-2-酮。 由此，即使阴极活性物质层和负极活性物质层的厚度增加，也能够提高阳极中的锂的扩散和接受性，能够获得优异的循环特性。

    Ferroelectric Memory and Semiconductor Memory
    86.
    发明申请
    Ferroelectric Memory and Semiconductor Memory 有权
    铁电存储器和半导体存储器

    公开(公告)号：US20060193162A1

    公开(公告)日：2006-08-31

    申请号：US11382098

    申请日：2006-05-08

    申请人： Ryu Ogiwara ,  Daisaburo Takashima ,  Sumio Tanaka ,  Yukihito Oowaki ,  Yoshiaki Takeuchi

    发明人： Ryu Ogiwara ,  Daisaburo Takashima ,  Sumio Tanaka ,  Yukihito Oowaki ,  Yoshiaki Takeuchi

    IPC分类号： G11C11/22

    CPC分类号： G11C11/22

    摘要： A chain type ferroelectric random access memory has a memory cell unit including ferroelectric memory cells electrically connected in series to each other, a plate line connected to an electrode of the memory cell unit, a bit line connected to the other electrode of the memory cell unit via a switching transistor, a sense amplifier which amplifies the voltages of this bit line and its complementary bit line, and a transistor inserted between the switching transistor and the sense amplifier. A value, being the minimum value of the gate voltage in the transistor obtained during elevation of the plate line voltage and comparative amplification, is smaller than a value, being the maximum value of the gate voltage in the transistor obtained during fall of the plate line voltage and comparative amplification. With these features, decrease in the accumulated charge of polarization in the memory cell is reduced and occurrence of disturb is prevented during read/write operations.

    摘要翻译： 链式铁电随机存取存储器具有包括彼此串联电连接的铁电存储单元的存储单元单元，连接到存储单元单元的电极的板线，连接到存储单元单元的另一个电极的位线 通过开关晶体管，放大该位线及其互补位线的电压的读出放大器以及插在开关晶体管和读出放大器之间的晶体管。 作为板线电压和比较放大的升压期间获得的晶体管中的栅极电压的最小值的值小于在板线掉电期间获得的晶体管中的栅极电压的最大值 电压和比较放大。 利用这些特征，存储单元中的累积电荷的减小减少，并且在读/写操作期间阻止了干扰的发生。

    Method for producing α-alumina powder
    87.
    发明授权
    Method for producing α-alumina powder 失效
    生产α-氧化铝粉末的方法

    公开(公告)号：US07078010B2

    公开(公告)日：2006-07-18

    申请号：US10846693

    申请日：2004-05-17

    申请人： Hajime Maki ,  Yoshiaki Takeuchi ,  Kazuhisa Kajihara

    发明人： Hajime Maki ,  Yoshiaki Takeuchi ,  Kazuhisa Kajihara

    IPC分类号： C01F7/02

    CPC分类号： B82Y30/00 ,  C01F7/308 ,  C01P2004/04 ,  C01P2004/50 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/12

    摘要： A method for producing α-alumina powder is described. The method comprises the steps of removing water from a compound containing the following (1), (2), (3) and (4), and calcining the results: (1) α-alumina precursor, (2) seed crystal, (3) water, (4) nitrate ion in an amount of from 2.8 to 3.3 mol per mol of aluminum (Al) contained in the α-alumina precursor and the seed crystal.

    摘要翻译： 描述了生产α-氧化铝粉末的方法。 该方法包括从含有以下（1），（2），（3）和（4）的化合物中除去水的步骤，并煅烧结果：（1）α-氧化铝前体，（2）晶种，（ 3）水，（4）硝酸根离子，其含量为α-氧化铝前体和晶种中每摩尔铝（Al）2.8-3.3摩尔。

    Semiconductor integrated circuit device and data write method thereof
    88.
    发明申请
    Semiconductor integrated circuit device and data write method thereof 失效
    半导体集成电路器件及其数据写入方法

    公开(公告)号：US20050232067A1

    公开(公告)日：2005-10-20

    申请号：US10879297

    申请日：2004-06-30

    申请人： Yoshiaki Takeuchi

    发明人： Yoshiaki Takeuchi

    IPC分类号： G11C11/401 ,  G11C8/00 ,  G11C8/06 ,  G11C8/08 ,  G11C11/22 ,  G11C11/403 ,  G11C11/407

    CPC分类号： G11C11/22 ,  G11C8/06 ,  G11C8/08 ,  G11C11/40615

    摘要： A semiconductor integrated circuit device includes a memory cell array, an address transition detecting circuit which detects transition of a column address signal, the column address signal being used to specify a column address of the memory cell array, a control circuit having a timeout circuit, the control circuit which generates an internal circuit control signal of desired length used to control column access to the memory cell array based on a result of detection by the address transition detecting circuit, and a column selection line whose selection time is controlled by the control circuit, wherein the column address signal used for selection of the column selection line is latched in a period of time in which the column selection line is selected at a write operation time.

    摘要翻译： 半导体集成电路装置包括存储单元阵列，检测列地址信号的转换的地址转换检测电路，用于指定存储单元阵列的列地址的列地址信号，具有超时电路的控制电路， 所述控制电路根据所述地址转换检测电路的检测结果生成用于控制对所述存储单元阵列的列访问的期望长度的内部电路控制信号;以及列选择线，其选择时间由所述控制电路 其中，用于选择列选择线的列地址信号在写入操作时间选择列选择线的时间段中被锁存。

    Plasma processing system and its substrate processing process, plasma enhanced chemical vapor deposition system and its film deposition process
    89.
    发明申请
    Plasma processing system and its substrate processing process, plasma enhanced chemical vapor deposition system and its film deposition process 审中-公开
    等离子体处理系统及其基板加工工艺，等离子体增强化学气相沉积系统及其薄膜沉积工艺

    公开(公告)号：US20050223990A1

    公开(公告)日：2005-10-13

    申请号：US10519475

    申请日：2003-10-01

    申请人： Keisuke Kawamura ,  Akira Yamada ,  Hiroshi Mashima ,  Kenji Tagashira ,  Yoshiaki Takeuchi

    发明人： Keisuke Kawamura ,  Akira Yamada ,  Hiroshi Mashima ,  Kenji Tagashira ,  Yoshiaki Takeuchi

    IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C16/509 ,  H01J37/32 ,  H01L21/205 ,  C23C16/00

    CPC分类号： H01J37/32082 ,  C23C16/509 ,  H01J37/32183 ,  H01J37/32541

    摘要： An object is to provide apparatuses for plasma processing which can make the distribution of the film thickness of a substance on a substrate uniform, methods of processing a substrate therewith, apparatuses for plasma-enhanced chemical vapor deposition, and methods for film formation therewith. When a desired substance is vapor deposited on the surface of a substrate (3), characteristics of the distribution of the thickness of a film on the substrate having a large area are improved by eliminating local imbalance in the distribution of the film thickness originating from deviation in the distribution of voltage on the ladder electrode (2), by way of adjusting impedance matching between each coaxial cable and corresponding feeding point for the ladder-shaped electrode (2) using branch cables provided to the coaxial cables for supplying high-frequency electric power to a ladder-shaped electrode (2) so as to make the film thickness uniform in the direction at right angles with the direction of fed electric power, whereby high-frequency electric power which is fed to each longitudinal electrode rod (2a) of the ladder-shaped electrode (2) can be adjusted, and distribution of voltage at a right or left part of the substrate and distribution of voltage at a central part of the substrate can be balanced, as well as by way of promoting uniformity in the distribution of the film thickness in the direction of fed electric power, by supplying streams of high-frequency electric power having the same frequency from two power supplies to the ladder-shaped electrode (2) with the phase difference between the high-frequency electric powers being varied over time.

    摘要翻译： 目的在于提供能够使基板上的物质的膜厚分布均匀的等离子体处理装置，用于处理基板的方法，等离子体增强化学气相沉积的装置及其成膜方法。 当在基板（3）的表面上气相沉积所需物质时，通过消除由于偏差导致的膜厚度分布的局部不平衡，改善了具有大面积的基板上的膜的厚度分布特性 在梯形电极（2）上的电压分配中，通过使用提供给用于提供高频电气的同轴电缆的分支电缆来调节每个同轴电缆与梯形电极（2）的相应馈电点之间的阻抗匹配 向梯形电极（2）施加电力以使膜厚度与与馈送电力方向成直角的方向均匀，由此，供给到每个纵向电极棒（2a）的高频电力 可以调节梯形电极（2），并且可以调整基板的右侧或左侧的电压分布以及中心部分的电压分布 可以通过将来自两个电源的具有相同频率的高频电力的流提供给梯子，从而通过提高膜馈送电力方向上的膜厚分布的均匀性来平衡基板 形状的电极（2），其中高频电功率之间的相位差随时间变化。