公开(公告)号：US20080081400A1

公开(公告)日：2008-04-03

申请号：US11467007

申请日：2006-08-24

申请人： Masato Doi ,  Katsuhiro Tomoda ,  Toshihiko Watanabe ,  Toyoharu Oohata

发明人： Masato Doi ,  Katsuhiro Tomoda ,  Toshihiko Watanabe ,  Toyoharu Oohata

IPC分类号： H01L21/58

CPC分类号： H01L21/6835 ,  H01L24/24 ,  H01L24/82 ,  H01L25/0753 ,  H01L2221/68368 ,  H01L2224/24226 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01052 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01079 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

摘要： A device transfer method and a display apparatus are provided. A device transfer method and a display apparatus are provided by or in which, in transferring devices arranged on a substrate onto another substrate, it is possible to easily strip the substrate after the transfer of the devices, to lower the possibility of damaging of the substrate, and to additionally transfer devices onto the same substrate after the transfer of the devices. A plurality of devices arranged on a temporary holding substrate are embedded into and held in a pressure sensitive adhesive layer formed on a transfer substrate, and the devices are stripped from the temporary holding substrate. Other devices are further additionally embedded into the pressure sensitive adhesive layer before hardening the pressure sensitive adhesive layer, whereby the devices can be arranged on a transfer substrate having a large area. Besides, where the devices additionally embedded into the pressure sensitive adhesive layer are different in characteristics from the devices embedded in the pressure sensitive adhesive layer in advance, it is possible to easily obtain a display apparatus for multicolor display, a display apparatus having a driving circuit, and the like.

摘要翻译： 提供了一种设备传送方法和显示设备。 设备传送方法和显示装置由设置在基板上的转印装置中提供或在其中，在装置转移之后可以容易地剥离基板，从而降低基板损坏的可能性 并且在传送设备之后另外将设备传送到相同的基板上。 布置在临时保持基板上的多个器件被嵌入并保持在形成在转印衬底上的压敏粘合剂层中，并且从临时保持衬底剥离器件。 在硬化压敏粘合剂层之前，还将其它装置嵌入压敏粘合剂层中，由此可以将这些装置布置在具有大面积的转印基板上。 此外，预先在嵌入压敏粘合剂层中的装置的特性与嵌入在压敏粘合剂层中的装置的特性不同的情况下，可以容易地获得用于多色显示的显示装置，具有驱动电路的显示装置 ，等等。

公开(公告)号：US20070190677A1

公开(公告)日：2007-08-16

申请号：US11691292

申请日：2007-03-26

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki ,  Toyoharu Oohata

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki ,  Toyoharu Oohata

IPC分类号： H01L21/00

CPC分类号： H01L33/20 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/24 ,  H01L33/32 ,  H01L2224/48137

摘要： A semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided. An n-type GaN layer is grown on a sapphire substrate, and a growth mask of SiN, for example, is formed thereon. On the n-type GaN layer exposed through an opening in the growth mask, a six-sided steeple-shaped n-type GaN layer is selectively grown, which has inclined crystal planes each composed of a plurality of crystal planes inclined from the major surface of the sapphire substrate by different angles of inclination to exhibit a convex plane as a whole. On the n-type GaN layer, an active layer and a p-type GaN layer are grown to make a light emitting element structure. Thereafter, a p-side electrode and an n-side electrode are formed.

摘要翻译： 提供半导体发光元件，其制造方法，集成半导体发光器件，其制造方法，照明器件及其制造方法。 在蓝宝石衬底上生长n型GaN层，例如在其上形成SiN的生长掩模。 在通过生长掩模中的开口暴露的n型GaN层上，选择性地生长六边形尖状n型GaN层，其倾斜晶面各自由从主表面倾斜的多个晶面构成 的蓝宝石衬底由不同的倾斜角度整体呈现凸面。 在n型GaN层上生长有源层和p型GaN层以制成发光元件结构。 此后，形成p侧电极和n侧电极。

公开(公告)号：US20070147453A1

公开(公告)日：2007-06-28

申请号：US11682770

申请日：2007-03-06

申请人： Toyoharu Oohata ,  Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki

发明人： Toyoharu Oohata ,  Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki

IPC分类号： H01S5/00 ,  H01S3/04

CPC分类号： H01L33/20 ,  H01L33/007 ,  H01L33/24

摘要： An n-type GaN layer is grown onto a sapphire substrate and a hexagonal etching mask is formed onto the n-type GaN layer as provided. The n-type GaN layer is etched to a predetermined depth by using the etching mask by the RIE method. A hexagonal prism portion whose upper surface is a C plane is formed. After the etching mask was removed, an active layer and a p-type GaN layer are sequentially grown onto the whole surface of the substrate so as to cover the hexagonal prism portion, thereby forming a light emitting device structure. After that, a p-side electrode is formed onto the p-type GaN layer of the hexagonal prism portion and an n-side electrode is formed onto the n-type GaN layer.

摘要翻译： 在蓝宝石衬底上生长n型GaN层，并且在所提供的n型GaN层上形成六边形蚀刻掩模。 通过使用RIE法的蚀刻掩模将n型GaN层蚀刻到预定深度。 形成上表面为C面的六边形棱镜部。 在除去蚀刻掩模之后，将有源层和p型GaN层依次生长到基板的整个表面上以覆盖六边形棱镜部分，从而形成发光器件结构。 之后，在六边形棱镜部分的p型GaN层上形成p侧电极，在n型GaN层上形成n侧电极。

公开(公告)号：US07227189B2

公开(公告)日：2007-06-05

申请号：US10868313

申请日：2004-06-15

申请人： Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

发明人： Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

IPC分类号： H01L33/00

CPC分类号： C30B29/40 ,  C30B25/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/20 ,  H01L33/32

摘要： Nitride semiconductor devices and methods of producing same are provided. The present invention includes forming a nitride semiconductor layer on a base body of the nitride semiconductor under selective and controlled crystal growth conditions. For example, the crystal growth rate, the supply of crystal growth source material and/or the crystal growth area can be varied over time, thus resulting in a nitride semiconductor device with enhanced properties.

摘要翻译： 提供氮化物半导体器件及其制造方法。 本发明包括在选择性和受控的晶体生长条件下在氮化物半导体的基体上形成氮化物半导体层。 例如，晶体生长速度，晶体生长源材料的供给和/或晶体生长面积可以随时间变化，从而导致具有增强性能的氮化物半导体器件。

公开(公告)号：US07205168B2

公开(公告)日：2007-04-17

申请号：US10494972

申请日：2003-09-08

申请人： Toyoharu Oohata ,  Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki

发明人： Toyoharu Oohata ,  Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki

IPC分类号： H01L21/00

CPC分类号： H01L33/20 ,  H01L33/007 ,  H01L33/24

摘要： An n-type GaN layer is grown onto a sapphire substrate and a hexagonal etching mask is formed onto the n-type GaN layer as provided. The n-type GaN layer is etched to a predetermined depth by using the etching mask by the RIE method. A hexagonal prism portion whose upper surface is a C plane is formed. After the etching mask was removed, an active layer and a p-type GaN layer are sequentially grown onto the whole surface of the substrate so as to cover the hexagonal prism portion, thereby forming a light emitting device structure. After that, a p-side electrode is formed onto the p-type GaN layer of the hexagonal prism portion and an n-side electrode is formed onto the n-type GaN layer.

摘要翻译： 在蓝宝石衬底上生长n型GaN层，并且在所提供的n型GaN层上形成六边形蚀刻掩模。 通过使用RIE法的蚀刻掩模将n型GaN层蚀刻到预定深度。 形成上表面为C面的六边形棱镜部。 在除去蚀刻掩模之后，将有源层和p型GaN层依次生长到基板的整个表面上以覆盖六边形棱镜部分，从而形成发光器件结构。 之后，在六边形棱镜部分的p型GaN层上形成p侧电极，在n型GaN层上形成n侧电极。

公开(公告)号：US20060278886A1

公开(公告)日：2006-12-14

申请号：US11422492

申请日：2006-06-06

申请人： Katsuhiro Tomoda ,  Jun Suzuki ,  Masato Doi ,  Kensuke Kojima

发明人： Katsuhiro Tomoda ,  Jun Suzuki ,  Masato Doi ,  Kensuke Kojima

IPC分类号： H01L33/00

CPC分类号： H01L33/54 ,  H01L33/20 ,  H01L33/46

摘要： A light emitting diode is provided. The light emitting diode includes a semiconductor layer that forms a light emitting diode structure and has a major face and an end face inclined at an angle θ1 to the major face, and a reflector that is provided outside the end face with being opposed to the end face, and includes at least a portion inclined at an angle θ2 to the major face, the angle θ2 being smaller than the angle θ1.

摘要翻译： 提供发光二极管。 发光二极管包括形成发光二极管结构的半导体层，并且具有与主面成角度θ1倾斜的主面和端面，以及设置在主面外侧的反射器 端面与​​端面相对，并且包括至少一个与主面成角度θ2倾斜的部分，角度θ2小于角度 1＆lt; 1＆gt;。

公开(公告)号：US20060270188A1

公开(公告)日：2006-11-30

申请号：US11383892

申请日：2006-05-17

申请人： Toshiaki Kanemitsu ,  Yuji Nishi ,  Katsuhiro Tomoda ,  Masato Doi

发明人： Toshiaki Kanemitsu ,  Yuji Nishi ,  Katsuhiro Tomoda ,  Masato Doi

IPC分类号： H01L21/30

CPC分类号： H01L21/67092 ,  H01L21/68

摘要： A device transferring system includes a first substrate support portion on which to mount a first substrate, a second substrate support portion for supporting a second substrate opposed to the first substrate, a swinging unit for regulating the position of the first substrate support portion so that a device on the first substrate makes contact with the second substrate side in parallel to the second substrate, a movable stage for supporting and moving the swinging unit, a sensor unit for sensing the condition where the device on the first substrate has made contact with the second substrate side, the sensor unit being provided between the first substrate support portion and a sensor support portion formed in the swinging unit, and a measuring unit 61 for measuring the position of stop of a motion of the first substrate due to the contact of the first substrate with the second substrate, and for measuring the moving amount of the swinging unit after the approaching motion of the first substrate is stopped.

摘要翻译： 装置传送系统包括：第一基板支撑部分，其上安装第一基板;第二基板支撑部分，用于支撑与第一基板相对的第二基板;摆动单元，用于调节第一基板支撑部分的位置， 第一基板上的装置与第二基板平行地与第二基板侧接触，用于支撑和移动摆动单元的可移动台，用于感测第一基板上的装置已经与第二基板接触的状态的传感器单元 传感器单元设置在第一基板支撑部分和形成在摆动单元中的传感器支撑部分之间;以及测量单元61，用于测量由于第一基板支撑部分与第一基板支撑部分的接触而导致的第一基板的运动停止位置 基板，并且用于在第一基板的接近运动之后测量摆动单元的移动量 底物停止。

公开(公告)号：US07129515B2

公开(公告)日：2006-10-31

申请号：US11098302

申请日：2005-03-31

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC分类号： H01L29/20 ,  H01L31/036

CPC分类号： H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

摘要： Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

摘要翻译： 提供半导体发光器件。 半导体发光器件包括衬底和选择性地生长在其上的晶体层，其中晶体层的至少一部分沿着与衬底相关的取向主平面倾斜或对角地相交的平面定向，从而例如增强晶体 性能，防止穿透位错，并且在制造和使用期间促进装置小型化和分离。

公开(公告)号：US07122826B2

公开(公告)日：2006-10-17

申请号：US11093885

申请日：2005-03-30

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC分类号： H01L29/20 ,  H01L31/036

CPC分类号： H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

摘要： Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

摘要翻译： 提供半导体发光器件。 半导体发光器件包括衬底和选择性地生长在其上的晶体层，其中晶体层的至少一部分沿着与衬底相关的取向主平面倾斜或对角地相交的平面定向，从而例如增强晶体 性能，防止穿透位错，并且在制造和使用期间促进装置小型化和分离。

公开(公告)号：US07085011B2

公开(公告)日：2006-08-01

申请号：US10047085

申请日：2002-01-14

申请人： Katsushi Fujita ,  Tohru Hoshino ,  Hiroaki Tajima ,  Masato Doi

发明人： Katsushi Fujita ,  Tohru Hoshino ,  Hiroaki Tajima ,  Masato Doi

IPC分类号： G06K15/00 ,  G06K9/00 ,  B41J1/00 ,  G03F3/08

CPC分类号： H04N1/6022 ,  G06K15/00 ,  G06K15/025 ,  H04N1/6011

摘要： An apparatus for making a color proof based on an image signal including yellow, magenta, cyan and black component data Y, M, C, K for each pixel, comprises; an image signal input section to receive the image signal; a black component correcting section to correct the black component data K on the basis of the yellow, magenta and cyan component data Y, M, C for each pixel in accordance with a predetermined black component correcting condition; an image signal output section to output an image signal including yellow, magenta, cyan and corrected-black component data Y, M, C, K′; and a color proof making section to expose a silver halide light sensitive material based on the outputted image signal with a plurality of light sources different in wavelength and to make a color proof sheet for each color of yellow, magenta, cyan and black.