公开(公告)号：US20090270021A1

公开(公告)日：2009-10-29

申请号：US12440359

申请日：2007-05-02

申请人： Tatsuya Umino ,  Tomohiro Uyama ,  Toshihide Takahashi ,  Osamu Goto ,  Shozo Kozu

发明人： Tatsuya Umino ,  Tomohiro Uyama ,  Toshihide Takahashi ,  Osamu Goto ,  Shozo Kozu

IPC分类号： A22C17/00 ,  A22C17/04 ,  A22C17/02

CPC分类号： A22C17/004

摘要： A de-boning method and apparatus for automating incision making to the meat of bone laden meat and scraping operation of meat from the bone laden meat by a meat separator, are proposed.The apparatus has a clamping device 1 for clamping an end part ‘d’ of unconcealed part of the bone of bone laden meat, a meat separator 31 having meat scraping plates 317a, 317b for pinching a bone of the bone laden meat, a cutter 33 located between the clamping device 1 and the meat separator 31, a clamping device lifting means 30, and rotation drive means 303 and 313 for rotating for rotating the clamping device 1 and the meat separator 31 in synchronism with each other, whereby spiral incision is made to a part of the meat of the bone laden meat by rotating the clamping device 1, and remaining part of the meat is scraped off as the clamping device is lifted while rotating in synchronism with the meat scraper.

摘要翻译： 提出了一种用于自动切割肉骨肉的切割方法和装置，并且通过肉分离器从含有肉的肉中刮取肉的操作。 该装置具有夹紧装置1，用于夹紧装载骨的骨头的未隐藏部分的末端部分'd'，肉分离器31具有用于夹住载有骨的骨肉的肉刮板317a，317b，切割器33 位于夹紧装置1和肉分离器31之间，夹紧装置提升装置30和旋转驱动装置303和313，用于使夹紧装置1和肉分离器31彼此同步地旋转，从而进行螺旋切口 通过旋转夹紧装置1将其装载到装满骨的肉的一部分中，并且随着夹持装置在与肉刮刀同步旋转的同时提升夹持装置而将剩余的一部分肉刮掉。

公开(公告)号：US20080108160A1

公开(公告)日：2008-05-08

申请号：US11969088

申请日：2008-01-03

申请人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

发明人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/2004 ,  H01S5/2013 ,  H01S5/3201 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12

摘要： A semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

摘要翻译： 由氮化物III-V化合物半导体制成的半导体发光器件包括由In和Ga等InGaN的第一氮化物III-V化合物半导体构成的有源层; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。

公开(公告)号：US07026179B2

公开(公告)日：2006-04-11

申请号：US10873479

申请日：2004-06-23

申请人： Yasuhiko Suzuki ,  Takeharu Asano ,  Motonobu Takeya ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya

发明人： Yasuhiko Suzuki ,  Takeharu Asano ,  Motonobu Takeya ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya

IPC分类号： H01L21/00 ,  H01L29/22

CPC分类号： C30B25/18 ,  C30B25/02 ,  C30B29/40 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02647 ,  H01L33/007

摘要： When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V compound semiconductor layers is controlled to satisfy 0

摘要翻译： 当GaN或其它氮化物III-V化合物半导体层在诸如蓝宝石衬底的衬底上生长时，衬底的厚度x相对于氮化物III-V化合物半导体层的厚度y被控制为满足0 =450μm。 或者，如果基板的最大尺寸为D（cm），则其翘曲H在0

公开(公告)号：US06972206B2

公开(公告)日：2005-12-06

申请号：US11108423

申请日：2005-04-18

申请人： Osamu Goto ,  Takeharu Asano ,  Motonobu Takeya ,  Katsunori Yanashima

发明人： Osamu Goto ,  Takeharu Asano ,  Motonobu Takeya ,  Katsunori Yanashima

IPC分类号： C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L33/00 ,  H01S5/02 ,  H01S5/323

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01S5/0207 ,  H01S5/32341 ,  H01S2304/12

摘要： Provided is a nitride semiconductor having a larger low-defective region on a surface thereof, a semiconductor device using the nitride semiconductor, a method of manufacturing a nitride semiconductor capable of easily reducing surface defects in a step of forming a layer through lateral growth, and a method of manufacturing a semiconductor device manufactured by the use of the nitride semiconductor. A seed crystal portion is formed into stripes on a substrate with a buffer layer sandwiched therebetween. Then, a crystal is grown from the seed crystal portion in two steps of growth conditions to form a nitride semiconductor layer. In a first step, a low temperature growth portion having a trapezoidal-shaped cross section in a layer thickness direction is formed at a growth temperature of 1030° C., and in a second step, lateral growth predominantly takes place at a growth temperature of 1070° C. Then, a high temperature growth potion is formed between the low temperature growth portions. Thereby, hillocks and lattice defects can be reduced in a region of the surface of the nitride semiconductor layer above the low temperature growth portion.

公开(公告)号：USD500767S1

公开(公告)日：2005-01-11

申请号：US29169182

申请日：2002-10-17

申请人： Masaaki Yoshikawa ,  Osamu Goto ,  Paul Fricker ,  Luca Guerciotti ,  Dimitri Bassis ,  Yasuyuki Satoh ,  Hironao Takahashi ,  Stephen Harris ,  Lester Harris ,  Alessandro Giussani ,  Urs Jann

设计人： Masaaki Yoshikawa ,  Osamu Goto ,  Paul Fricker ,  Luca Guerciotti ,  Dimitri Bassis ,  Yasuyuki Satoh ,  Hironao Takahashi ,  Stephen Harris ,  Lester Harris ,  Alessandro Giussani ,  Urs Jann

公开(公告)号：US06635359B1

公开(公告)日：2003-10-21

申请号：US10049360

申请日：2002-02-08

申请人： Masao Kurosaki ,  Jun Maki ,  Yasuhide Morimoto ,  Kazumi Nishimura ,  Osamu Goto

发明人： Masao Kurosaki ,  Jun Maki ,  Yasuhide Morimoto ,  Kazumi Nishimura ,  Osamu Goto

IPC分类号： B32B1520

CPC分类号： C23C2/06 ,  C23C2/12 ,  C23C2/26 ,  C23C2/28 ,  Y10S428/939 ,  Y10T428/12722 ,  Y10T428/12757 ,  Y10T428/12799 ,  Y10T428/12924 ,  Y10T428/12931

摘要： A Zn—Al—Mg—Si alloy-plated steel material with excellent corrosion resistance, characterized by comprising, in terms of wt %, Al: at least 45% and no greater than 70%, Mg: at least 3% and less than 10%, Si: at least 3% and less than 10%, with the remainder Zn and unavoidable impurities, wherein the Al/Zn ratio is 0.89-2.75 and the plating layer contains a bulky Mg2Si phase; also, a Zn—Al—Mg—Si alloy-plated steel material with excellent corrosion resistance, characterized by comprising, in terms of wt %, Al: at least 45% and no greater than 70%, Mg: at least 1% and less than 5%, Si: at least 0.5% and less than 3%, with the remainder Zn and unavoidable impurities, wherein the Al/Zn ratio is 0.89-2.75 and the plating layer contains a scaly Mg2Si phase.

摘要翻译： 一种耐腐蚀性优异的Zn-Al-Mg-Si合金钢材，其特征在于以重量％计含有Al：至少45％且不大于70％的Mg：至少3％以下 10％，Si：至少3％且小于10％，其余为Zn和不可避免的杂质，其中Al / Zn比为0.89-2.75，镀层含有体积大的Mg2Si相; 还有，具有优异耐腐蚀性的Zn-Al-Mg-Si合金镀钢材料，其特征在于以重量％计含有Al：至少45％且不大于70％的Mg：至少1％和 小于5％，Si：至少0.5％且小于3％，其余为Zn和不可避免的杂质，其中Al / Zn比为0.89-2.75，镀层含有鳞片状Mg 2 Si相。

公开(公告)号：US06372365B1

公开(公告)日：2002-04-16

申请号：US09338598

申请日：1999-06-23

申请人： Masatoshi Ibuki ,  Osamu Goto ,  Noriaki Yoshitake ,  Yoshiyuki Murasawa ,  Shotaro Tsuda

发明人： Masatoshi Ibuki ,  Osamu Goto ,  Noriaki Yoshitake ,  Yoshiyuki Murasawa ,  Shotaro Tsuda

IPC分类号： B05D714

CPC分类号： B05D7/16 ,  B05D2350/65 ,  C23C2222/20 ,  Y10T428/12569 ,  Y10T428/12757 ,  Y10T428/12799 ,  Y10T428/31663

摘要： A resin-coated Al—Zn alloy coated steel sheet is excellent in formability, resistance to chromium dissolution, corrosion resistance, alkali resistance, and paintability, and produced by the following method. That is, a silane coupling agent having amino group, chromium ion and at least one alcohol selected from the group consisting of trihydric alcohol and dihydric alcohol having the number of carbon of 2 to 3 are compounded into an acrylic polymer resin emulsion including carboxyl group and glycidyl group, and having an acid value of 10 to 60. A pH of the resultant mixture is adjusted within a range of 7 to 9 to obtain a chromate containing resin composition. The chromate containing resin composition is applied on an Al—Zn alloy coated steel sheet as a substrate, and then dried to obtain a resin film on the substrate. A compounding amount of the silane coupling agent is within a range of 0.5 to 3.0 wt % with respect to a resin solid component of the acrylic polymer resin emulsion. A compounding amount of the alcohol is within a range of 25 to 150 wt % with respect to the chromium ion. An amount of the resin film is within a range of 0.5 to 3.0 g/m2, and a content of chromium ion in the resin film is within a range of 5 to 50 mg/m2.

摘要翻译： 树脂涂覆的Al-Zn合金涂层钢板的成型性，耐铬溶解性，耐腐蚀性，耐碱性和可涂布性优异，并且通过以下方法制造。 也就是说，将具有氨基，铬离子和至少一种选自碳数为2〜3的三元醇和二元醇的醇的硅烷偶联剂配合成包含羧基和 缩水甘油基，酸值为10〜60。将所得混合物的pH调节在7〜9的范围内，得到含有铬酸盐的树脂组合物。 将含铬酸盐的树脂组合物涂布在作为基材的Al-Zn合金涂层钢板上，然后干燥以在基材上获得树脂膜。 相对于丙烯酸系聚合物树脂乳液的树脂固体成分，硅烷偶联剂的配合量在0.5〜3.0重量％的范围内。 醇的配合量相对于铬离子为25〜150重量％的范围。 树脂膜的量在0.5〜3.0g / m 2的范围内，树脂膜中的铬离子的含量在5〜50mg / m 2的范围内。

公开(公告)号：US6105663A

公开(公告)日：2000-08-22

申请号：US708717

申请日：1996-09-05

申请人： Masahiro Usui ,  Shigehira Yamamoto ,  Osamu Goto

发明人： Masahiro Usui ,  Shigehira Yamamoto ,  Osamu Goto

IPC分类号： F28C1/04 ,  F28C1/14 ,  F28F25/02 ,  F28F25/08 ,  F28C1/16

CPC分类号： F28C1/14 ,  F28F25/02 ,  F28F25/08 ,  Y10S165/163 ,  Y10S261/11 ,  Y10S261/77 ,  Y10T29/4935

摘要： The present invention relates to a heat dissipation unit for cross flow type cooling tower with which it is possible to prevent the emission of white vapor without lowering the cooling power of the cooling tower, and also without requiring troublesome routine operation. In order to accomplish the above object, the heat dissipation unit of the present invention comprises filling plates arranged vertically and parallel with each other so as to form spaces therebetween, each of the filling plates having uneven surfaces down which water to be cooled flows when water to be cooled is supplied onto the filling plates, and cowl members disposed between neighboring filling plates, each of the cowl members including a pair of side plate portions having upper ends and a roof portion connecting the upper ends of the side plate portions. The side plate portions of the cowl members are arranged substantially parallel with the filling plates so as to form gaps between the filling plates and the side plate portions of the cowl members.

摘要翻译： 本发明涉及一种用于横流型冷却塔的散热单元，其可以防止白蒸汽的发射而不降低冷却塔的冷却功率，并且也不需要麻烦的日常操作。 为了实现上述目的，本发明的散热单元包括彼此垂直且平行布置的填充板，以便在它们之间形成空间，每个填充板具有不平坦的表面，当水被冷却时，待冷却的水流动 要被冷却的物品被供应到填充板上，并且前围组件设置在相邻的填充板之间，每个前围构件包括一对具有上端的侧板部和连接侧板部的上端的顶部部分。 整流罩构件的侧板部分布置成与填充板基本平行，以便在整流罩构件的填充板和侧板部分之间形成间隙。

公开(公告)号：US5958308A

公开(公告)日：1999-09-28

申请号：US20893

申请日：1998-02-09

申请人： Kesaaki Mochizuki ,  Osamu Goto ,  Katsutoshi Shibata

发明人： Kesaaki Mochizuki ,  Osamu Goto ,  Katsutoshi Shibata

IPC分类号： F28F25/04 ,  F28C1/14 ,  B01F3/04 ,  F28F27/02

CPC分类号： F28C1/14 ,  F28F25/04 ,  F28C2001/145 ,  Y10S165/90 ,  Y10S261/77

摘要： Hot water is sprayed to fillers arranged immediately under a hot water vessel through spray ports opened on a lower surface of the hot water vessel. The hot water flowing down along the fillers is cooled through direct contact with ambient air. The cooling tower includes fillers partitioned alternately into permanent wet and wet-dry changeover regions which are mutually isolated for flow passages of the ambient air and spray pipes provided on the lower surface of the hot water vessel exclusively for the wet-dry changeover regions such that the hot water can be sprayed to the wet-dry changeover regions separately from the permanent wet regions. The hot water vessel is supported by the spray pipes. The spray ports of the hot water vessel is communicated only with the permanent wet regions.

摘要翻译： 将热水通过在热水容器的下表面上开口的喷雾口喷射到紧邻热水容器下面的填料上。 沿着填料流下的热水通过与环境空气直接接触而冷却。 冷却塔包括交替分配成永久性湿式和湿式干式转换区域的填料，其相互隔离用于环境空气的流动通道和设置在热水容器的下表面上的专用于湿 - 干转换区域的喷管，使得 热水可以与永久湿润区域分开地喷洒到干湿转换区域。 热水容器由喷管支撑。 热水容器的喷水口仅与永久湿区连通。

公开(公告)号：US5800743A

公开(公告)日：1998-09-01

申请号：US708716

申请日：1996-09-05

申请人： Masahiro Usui ,  Shigehira Yamamoto ,  Osamu Goto

发明人： Masahiro Usui ,  Shigehira Yamamoto ,  Osamu Goto

IPC分类号： F28C1/14 ,  F28C1/16 ,  F28F25/02 ,  F28F25/08 ,  B01F3/04

CPC分类号： F28F25/02 ,  F28C1/14 ,  F28C2001/145 ,  Y10S261/77

摘要： The present invention relates to a cross flow type cooling tower with which it is possible to prevent the emission of white vapor in cold weather with certainty. In order to accomplish the above object, the cooling tower of the present invention comprises: a heat dissipation unit having filling plates arranged vertically and parallel with each other so as to form dry air passages and moist air passages therebetween, each of the dry air passages and the moist air passages having inner surfaces; water supply means for supplying water to be cooled to the inner surfaces of the moist air passages for cooling the water by contact with air passing through the moist air passage; and water invasion stoppers provided at side ends of the filling plates for preventing the water flowing down the inner surfaces of the moist air passages from invading the dry air passages.

摘要翻译： 本发明涉及一种横流型冷却塔，可以在寒冷的天气中确定地防止白色蒸汽的排放。 为了实现上述目的，本发明的冷却塔包括：具有彼此垂直且平行布置的填充板的散热单元，以在其间形成干燥空气通道和湿气通道，每个干燥空气通道 湿空气通道具有内表面; 供水装置，用于将冷却的水供应到湿空气通道的内表面，用于通过与通过湿空气通道的空气接触来冷却水; 以及设置在填充板的侧端处的防水挡板，用于防止水从湿空气通道的内表面向下流入侵入干燥空气通道。