公开(公告)号：USD500767S1

公开(公告)日：2005-01-11

申请号：US29169182

申请日：2002-10-17

申请人： Masaaki Yoshikawa ,  Osamu Goto ,  Paul Fricker ,  Luca Guerciotti ,  Dimitri Bassis ,  Yasuyuki Satoh ,  Hironao Takahashi ,  Stephen Harris ,  Lester Harris ,  Alessandro Giussani ,  Urs Jann

设计人： Masaaki Yoshikawa ,  Osamu Goto ,  Paul Fricker ,  Luca Guerciotti ,  Dimitri Bassis ,  Yasuyuki Satoh ,  Hironao Takahashi ,  Stephen Harris ,  Lester Harris ,  Alessandro Giussani ,  Urs Jann

公开(公告)号：US09048442B2

公开(公告)日：2015-06-02

申请号：US13000554

申请日：2009-06-23

申请人： Kohei Asada ,  Osamu Goto ,  Chizu Sekine

发明人： Kohei Asada ,  Osamu Goto ,  Chizu Sekine

IPC分类号： H01L51/54 ,  C09K11/06 ,  H01L51/00 ,  C08G61/12 ,  C08K5/3437 ,  C08L65/00 ,  H01L51/50

CPC分类号： H01L51/0085 ,  C08G61/12 ,  C08G61/122 ,  C08G2261/3142 ,  C08G2261/3162 ,  C08G2261/3221 ,  C08G2261/5242 ,  C08K5/3437 ,  C08L65/00 ,  C09K11/06 ,  C09K2211/1029 ,  C09K2211/1044 ,  C09K2211/1059 ,  C09K2211/185 ,  H01L51/0037 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/0071 ,  H01L51/50 ,  H01L2251/308 ,  H01L2251/552 ,  Y10S428/917

摘要： Disclosed is a composition containing a metal complex and an organic compound, wherein the difference between the absolute value of the energy level of the lowest unoccupied molecular orbit of said metal complex and the absolute value of the lowest unoccupied molecular orbit of said organic compound, as calculated with a computational technique, is less than 0.40 eV.

摘要翻译： 公开了含有金属络合物和有机化合物的组合物，其中所述金属络合物的最低未占分子轨道的能级的绝对值与所述有机化合物的最低未占分子轨道的绝对值之间的差异为 用计算技术计算，小于0.40eV。

公开(公告)号：US09024053B2

公开(公告)日：2015-05-05

申请号：US13510207

申请日：2010-11-18

申请人： Seiji Shinkai ,  Shuichi Haraguchi ,  Tomohiro Shiraki ,  Masashi Ogawa ,  Shuhei Nakatani ,  Kei Sakanoue ,  Osamu Goto ,  Hidenobu Kakimoto

发明人： Seiji Shinkai ,  Shuichi Haraguchi ,  Tomohiro Shiraki ,  Masashi Ogawa ,  Shuhei Nakatani ,  Kei Sakanoue ,  Osamu Goto ,  Hidenobu Kakimoto

IPC分类号： C07F7/04 ,  G03F7/027 ,  C07F7/12 ,  C07F7/18 ,  G03F7/075 ,  H01L51/00 ,  G03F7/004

CPC分类号： G03F7/027 ,  C07F7/12 ,  C07F7/1804 ,  G03F7/0046 ,  G03F7/0755 ,  H01L51/0056 ,  H01L51/0095

摘要： A problem of the present invention is to prevent a base layer beneath the layer to be irradiated with light from deterioration in property and a functional thin film from deterioration in property as the fine patterning of a functional film is performed with light irradiation. Means for solving the problem is a compound obtained by dimerizing with light irradiation a compound (A) containing a group that has photosensitivity and can be photodimerized and a group having lyophilicity and a compound (B) containing a group that has photosensitivity and can be photodimerized and a group having liquid-repellency.

摘要翻译： 本发明的问题在于，通过光照射进行功能性薄膜的精细图案化，可以防止层下面的基底层被特性劣化的光照射，功能性薄膜的性能劣化。 用于解决问题的方法是通过光照射包含具有光敏性且可以被光二聚化的基团的化合物（A）和具有亲液性的基团和含有具有光敏性并可以被光二聚化的基团的化合物（B））而获得的化合物 和具有拒水性的组。

公开(公告)号：US20130112104A1

公开(公告)日：2013-05-09

申请号：US13809139

申请日：2011-06-27

申请人： Masafumi Tamai ,  Osamu Goto

发明人： Masafumi Tamai ,  Osamu Goto

IPC分类号： B61F5/24

CPC分类号： B61F5/245 ,  F16H25/24 ,  F16H57/029 ,  F16H2025/2078 ,  H02K7/06

摘要： A compact linear actuator in which a back drive force is small and sticking due to abrasion powder and the like hardly occurs, and a rocking controller for a railway vehicle having the linear actuator are provided. The linear actuator has a main body of a hollow structure having an open end portion and a closed end portion, a cylinder that is fixed to a closed end portion side in the main body, and has an open end at an open end portion side, a linear motion rod that has one end portion extending from the open end portion of the main body, has a wear ring on an outer circumferential portion of the other end portion, and is housed in the cylinder slidably in an axial direction, and a hollow shaft rotatably supported in the main body, wherein the hollow shaft has a permanent magnet on a part of an outer circumferential surface, a winding section included on a part of an inner surface of the main body and the permanent magnet configure a hollow motor, a nut section coaxially fixed to the hollow shaft and a screw section on an outer circumferential surface of the linear motion rod are engaged with each other to configure a rotation/linear motion converting mechanism, and rotary oil seal sections that seal a gap between the hollow shaft and the main body in both sides in the axial direction relative to the nut section are included.

摘要翻译： 一种紧凑的线性致动器，其中后驱动力小并且由于磨损粉末等而几乎不发生粘附，并且提供了具有线性致动器的轨道车辆的摇摆控制器。 线性致动器具有中空结构的主体，该主体具有开口端部和闭合端部，该筒体固定在主体的封闭端部侧​​，并且在开口端部侧具有开口端， 具有从主体的开口端部延伸的一端部的直线运动杆在另一端部的外周部具有耐磨环，并且沿轴向可滑动地容纳在所述圆筒中， 轴可旋转地支撑在主体中，其中中空轴在外周面的一部分上具有永磁体，包括在主体的内表面的一部分上的绕组部分和永磁体构成中空电机， 螺母部分同轴地固定在中空轴上，并且直线运动杆的外圆周表面上的螺纹部分彼此接合以构成旋转/线性运动转换机构，以及旋转油封部分 包括在空心轴和主体之间沿相对于螺母部分的轴向两侧的间隙密封。

公开(公告)号：US20130046073A1

公开(公告)日：2013-02-21

申请号：US13580919

申请日：2011-02-25

申请人： Osamu Goto ,  Daisuke Fukushima ,  Tomoya Nakatani

发明人： Osamu Goto ,  Daisuke Fukushima ,  Tomoya Nakatani

IPC分类号： C08G73/02

CPC分类号： C08G61/12 ,  C08G61/02 ,  C08G2261/3142 ,  C08G2261/3162 ,  C08G2261/411

摘要： The problem to be solved of the present invention is to provide a method for producing a polymer compound having an increased molecular weight through a short-time polymerization process. Means for solving the problem is a method for producing a polymer compound having a repeating unit represented by formula (2), which method comprising a step of polymerizing a first aromatic compound having at least two first functional groups each containing a boron atom with a second aromatic compound having at least two second functional groups which are capable of reacting with the first functional group, in the presence of an organic solvent, a palladium complex, a base and a compound represented by formula (1): wherein Ra, Rb, Rc, Rd, Re and Rf are the same or different, and each represents a hydrogen atom or a monovalent organic group, or any two of Ra to Rf are bound with each other to form a non-aromatic ring, and the remainder are the same or different, and each represents a hydrogen atom or a monovalent organic group; —Ar—  (2) wherein Ar represents a divalent group resulting from the removal of two hydrogen atoms from an aromatic compound.

摘要翻译： 本发明要解决的问题是提供通过短时聚合方法制备分子量增加的高分子化合物的方法。 解决问题的手段是制备具有式（2）所示重复单元的高分子化合物的方法，该方法包括使具有至少两个含有硼原子的第一官能团的第一芳族化合物与第二芳族化合物聚合的步骤 在有机溶剂，钯络合物，碱和由式（1）表示的化合物的存在下，具有至少两个能够与第一官能团反应的第二官能团的芳族化合物：其中Ra，Rb，Rc ，Rd，Re和Rf相同或不同，各自表示氢原子或一价有机基团，或者Ra至Rf中的任意两个彼此结合形成非芳香环，其余部分相同 或不同，各自表示氢原子或一价有机基团; -Ar-（2）其中Ar表示从芳族化合物中除去两个氢原子而得到的二价基团。

公开(公告)号：US20120248563A1

公开(公告)日：2012-10-04

申请号：US13424690

申请日：2012-03-20

申请人： Toru Udaka ,  Osamu Goto

发明人： Toru Udaka ,  Osamu Goto

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L51/424 ,  H01L51/0012 ,  H01L51/0055 ,  H01L51/0064 ,  H01L51/0072 ,  Y02E10/549

摘要： A polarization organic photoelectric conversion device having a structure in which an organic photoelectric conversion layer is interposed between a first electrode and a second electrode, at least one of which is transparent, wherein the organic photoelectric conversion layer is one obtained by uniaxially orienting at least a portion thereof in the plane in advance.

摘要翻译： 一种偏振有机光电转换装置，其特征在于，有机光电转换层被插入在第一电极和第二电极之间，其中至少一个是透明的，其中有机光电转换层是通过单轴取向至少一个 其部分预先在飞机上。

公开(公告)号：US20110114890A1

公开(公告)日：2011-05-19

申请号：US13000554

申请日：2009-06-23

申请人： Kohei Asada ,  Osamu Goto ,  Chizu Sekine

发明人： Kohei Asada ,  Osamu Goto ,  Chizu Sekine

IPC分类号： C09K11/06

CPC分类号： H01L51/0085 ,  C08G61/12 ,  C08G61/122 ,  C08G2261/3142 ,  C08G2261/3162 ,  C08G2261/3221 ,  C08G2261/5242 ,  C08K5/3437 ,  C08L65/00 ,  C09K11/06 ,  C09K2211/1029 ,  C09K2211/1044 ,  C09K2211/1059 ,  C09K2211/185 ,  H01L51/0037 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/0071 ,  H01L51/50 ,  H01L2251/308 ,  H01L2251/552 ,  Y10S428/917

摘要： Disclosed is a composition containing a metal complex and an organic compound, wherein the difference between the absolute value of the energy level of the lowest unoccupied molecular orbit of said metal complex and the absolute value of the lowest unoccupied molecular orbit of said organic compound, as calculated with a computational technique, is less than 0.40 eV.

摘要翻译： 公开了含有金属络合物和有机化合物的组合物，其中所述金属络合物的最低未占分子轨道的能级的绝对值与所述有机化合物的最低未占分子轨道的绝对值之间的差异为 用计算技术计算，小于0.40eV。

公开(公告)号：US20110073854A1

公开(公告)日：2011-03-31

申请号：US12995570

申请日：2009-05-28

申请人： Shota Moriwaki ,  Osamu Goto ,  Tomoko Takasuka

发明人： Shota Moriwaki ,  Osamu Goto ,  Tomoko Takasuka

IPC分类号： H01L51/50 ,  C08G75/06 ,  C07D333/78

CPC分类号： H01L51/0043 ,  C07D333/78 ,  C08G61/126 ,  C08G2261/3142 ,  C08G2261/3243 ,  C08G2261/92 ,  H01L51/0039 ,  H01L51/0512 ,  H01L51/0558 ,  Y02E10/549 ,  Y02P70/521

摘要： A polymer compound comprising a repeating unit represented by the formula (I): [wherein X1 represents an oxygen atom, a sulfur atom or N(RN)—, R1 to R4 and RN represent a hydrogen atom, a halogen atom, an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, an alkylthio group, an aryl group, an aryloxy group, an arylthio group, an arylalkyl group, an arylalkoxy group, an arylalkylthio group, an arylalkenyl group, an arylalkynyl group, a mono-valent heterocyclic group or the like.].

摘要翻译： 一种包含式（I）表示的重复单元的聚合物化合物：[其中X1表示氧原子，硫原子或N（RN） - ，R1〜R4和RN表示氢原子，卤素原子，烷基 烯基，炔基，烷氧基，烷硫基，芳基，芳氧基，芳硫基，芳烷基，芳烷氧基，芳烷硫基，芳烯基，芳基炔基， 1价杂环基等。

公开(公告)号：US07176499B2

公开(公告)日：2007-02-13

申请号：US10719206

申请日：2003-11-21

申请人： Tsunenori Asatsuma ,  Shigetaka Tomiya ,  Koshi Tamamura ,  Tsuyoshi Tojo ,  Osamu Goto ,  Kensaku Motoki

发明人： Tsunenori Asatsuma ,  Shigetaka Tomiya ,  Koshi Tamamura ,  Tsuyoshi Tojo ,  Osamu Goto ,  Kensaku Motoki

IPC分类号： H01L29/22

CPC分类号： C30B25/02 ,  B82Y20/00 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/32 ,  H01S5/0207 ,  H01S5/0213 ,  H01S5/2036 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/2231 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/4031 ,  H01S2301/173

摘要： When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.

摘要翻译： 当半导体发光器件或半导体器件通过在由氮化物III-V化合物半导体衬底构成的氮化物III-V化合物半导体衬底上生长氮化物III-V化合物半导体层（其将形成发光器件结构或器件结构） 具有第一平均位错密度的晶体的形式和具有高于第一平均位错密度的第二平均位错密度并在第一区域中周期性排列的多个第二区域，器件区域被限定在氮化物III-V化合物半导体衬底 使得器件区域基本上不包括第二区域，最终获得的器件的发射区域或有源区域不包括第二区域。

公开(公告)号：US20060273326A1

公开(公告)日：2006-12-07

申请号：US11425595

申请日：2006-06-21

申请人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

发明人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/2004 ,  H01S5/2013 ,  H01S5/3201 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12

摘要： A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

摘要翻译： 由氮化物III-V族化合物半导体制成的半导体发光器件包括由含有In和Ga的第一氮化物III-V化合物半导体构成的有源层，例如InGaN; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。