公开(公告)号：US10777412B2

公开(公告)日：2020-09-15

申请号：US15874226

申请日：2018-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongwook Lee ,  Sangwon Kim ,  Minsu Seol ,  Seongjun Park ,  Hyeonjin Shin ,  Yunseong Lee ,  Seongjun Jeong ,  Alum Jung

IPC: H01L21/00 ,  H01B1/00 ,  H01L21/033 ,  G03F7/11 ,  G03F7/09 ,  H01B1/04 ,  C01B32/194 ,  H01L21/311 ,  B82Y30/00 ,  B82Y40/00

Abstract: Provided are a hardmask composition, a method of preparing the same, and a method of forming a patterned layer using the hardmask composition. The hardmask composition may include graphene quantum dots, a metal compound, and a solvent. The metal compound may be chemically bonded (e.g., covalently bonded) to the graphene quantum dots. The metal compound may include a metal oxide. The metal oxide may include at least one of zirconium (Zr) oxide, titanium (Ti) oxide, tungsten (W) oxide, or aluminum (Al) oxide. The graphene quantum dots may be bonded to the metal compound by an M—O—C bond or an M—C bond, where M is a metal element, O is oxygen, and C is carbon.

公开(公告)号：US10559660B2

公开(公告)日：2020-02-11

申请号：US16248945

申请日：2019-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun Lee ,  Haeryong Kim ,  Hyeonjin Shin ,  Seunggeol Nam ,  Seongjun Park

IPC: H01L29/04 ,  H01L29/78 ,  H01L29/08 ,  H01L21/285 ,  H01L29/45 ,  H01L29/417 ,  H01L29/06 ,  H01L29/267 ,  H01L29/12 ,  H01L29/26 ,  H01L29/16 ,  H01L29/165

Abstract: A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.

公开(公告)号：US10553730B2

公开(公告)日：2020-02-04

申请号：US15603796

申请日：2017-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyoung Lee ,  Jinseong Heo ,  Jaeho Lee ,  Haeryong Kim ,  Seongjun Park ,  Hyeonjin Shin ,  Eunkyu Lee ,  Sanghyun Jo

IPC: H01L31/0216 ,  G01N21/59 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/18

Abstract: A broadband multi-purpose optical device includes a semiconductor layer having a light absorption characteristic, a first active layer having a light absorption band different from a light absorption band of the semiconductor layer, a first two-dimensional (2D) material layer adjacent to the first active layer, and a first interfacial layer configured to control a pinning potential of the semiconductor layer and the first active layer. The broadband multi-purpose optical device may further include at least one second active layer, and may include a tandem structure that further includes at least one second 2D material layer. The first active layer and the second active layer may have different light absorption bands. The broadband multi-purpose optical device may further include a second interfacial layer adjacent to the first 2D material layer.

公开(公告)号：US10553684B2

公开(公告)日：2020-02-04

申请号：US15825344

申请日：2017-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Lee ,  Hyeonjin Shin ,  Dongwook Lee ,  Seongjun Park ,  Kiyoung Lee ,  Eunkyu Lee ,  Sanghyun Jo ,  Jinseong Heo

IPC: H01L31/0352 ,  H01L29/16 ,  H01L31/028 ,  H01L31/09 ,  H01L31/101 ,  H01L27/144 ,  H01L27/146 ,  H01L27/15 ,  H01L29/12 ,  H01L51/00 ,  H01L51/05 ,  H01L27/30

Abstract: Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

公开(公告)号：US10539868B2

公开(公告)日：2020-01-21

申请号：US15807106

申请日：2017-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin Shin ,  Hyunjae Song ,  Seongjun Park ,  Keunwook Shin ,  Changseok Lee

IPC: G03F1/64 ,  G03F1/22 ,  G03F7/20

Abstract: A pellicle for a photomask, a reticle including the same, and an exposure apparatus for lithography are provided. The pellicle may include a pellicle membrane, and the pellicle membrane may include nanocrystalline graphene. The nanocrystalline graphene may have defects. The nanocrystalline graphene may include a plurality of nanoscale crystal grains, and the nanoscale crystal grains may include a two-dimensional (2D) carbon structure having an aromatic ring structure. The defects of the nanocrystalline graphene may include at least one of an sp3 carbon atom, an oxygen atom, a nitrogen atom, or a carbon vacancy.

公开(公告)号：US20190157211A1

公开(公告)日：2019-05-23

申请号：US16257171

申请日：2019-01-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae SONG ,  Seunggeol Nam ,  Yeonchoo Cho ,  Seongjun Park ,  Hyeonjin Shin ,  Jaeho Lee

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/53209 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76852 ,  H01L23/5226

Abstract: Example embodiments relate to a layer structure having a diffusion barrier layer, and a method of manufacturing the same. The layer structure includes first and second material layers and a diffusion barrier layer therebetween. The diffusion barrier layer includes a nanocrystalline graphene (nc-G) layer. In the layer structure, the diffusion barrier layer may further include a non-graphene metal compound layer or a graphene layer together with the nc-G layer. One of the first and second material layers is an insulating layer, a metal layer, or a semiconductor layer, and the remaining layer may be a metal layer.

公开(公告)号：US10217819B2

公开(公告)日：2019-02-26

申请号：US15010807

申请日：2016-01-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun Lee ,  Haeryong Kim ,  Hyeonjin Shin ,  Seunggeol Nam ,  Seongjun Park

IPC: H01L29/04 ,  H01L29/78 ,  H01L29/08 ,  H01L21/285 ,  H01L29/45 ,  H01L29/06 ,  H01L29/267 ,  H01L29/417 ,  H01L29/12 ,  H01L29/26 ,  H01L29/165 ,  H01L29/16

Abstract: A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.

公开(公告)号：US10199958B2

公开(公告)日：2019-02-05

申请号：US15049726

申请日：2016-02-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin Shin ,  Kyungeun Byun ,  Minsu Seol ,  Seongjun Park

IPC: H02N1/04 ,  H02N1/00

Abstract: A triboelectric generator includes first and second electrodes facing each other, and a first energy generation layer provided on the first electrode and generating electric energy through contact with other material, the first energy generation layer comprising a two-dimensional (2D) material having a crystal structure of a 2D shape.

公开(公告)号：US10096735B2

公开(公告)日：2018-10-09

申请号：US15668997

申请日：2017-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Seongjun Park ,  Kiyoung Lee ,  Sangyeob Lee ,  Eunkyu Lee ,  Jaeho Lee

IPC: H01L31/107 ,  H01L31/105 ,  H01L31/18 ,  H01L31/0232 ,  H01L31/0336 ,  H01L29/66 ,  H01L29/267 ,  H01L31/109 ,  H01L29/16

Abstract: A photodetector includes an insulating layer on a substrate, a first graphene layer on the insulating layer, a 2-dimensional (2D) material layer on the first graphene layer, a second graphene layer on the 2D material layer, a first electrode on the first graphene layer, and a second electrode on the second graphene layer. The 2D material layer includes a barrier layer and a light absorption layer. The barrier layer has a larger bandgap than the light absorption layer.

公开(公告)号：US09960309B2

公开(公告)日：2018-05-01

申请号：US15181804

申请日：2016-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Kiyoung Lee ,  Jaeho Lee ,  Sangyeob Lee ,  Eunkyu Lee ,  Seongjun Park

IPC: H01L31/109 ,  H01L31/0392 ,  H01L31/0336 ,  H01L31/0224 ,  H01L31/0216

CPC classification number: H01L31/109 ,  H01L31/02161 ,  H01L31/022466 ,  H01L31/0336 ,  H01L31/0352 ,  H01L31/072 ,  Y02E10/50

Abstract: A photoelectronic device includes a semiconductor substrate doped with a first type impurity, a second semiconductor layer doped with a second type impurity of an opposite type to the first type impurity, a transparent electrode formed on a second surface of the second semiconductor layer, the second surface being opposite a first surface on which the semiconductor substrate is formed, and a barrier layer disposed between the second semiconductor layer and the semiconductor substrate or between the second semiconductor layer and the transparent electrode. The second semiconductor layer has a band gap energy less than that of the semiconductor substrate, and the barrier layer includes a semiconductor material or an insulator having a band gap greater than that of the semiconductor substrate.